KR102182566B1 - 편광 웨이퍼 검사를 위한 방법 및 장치 - Google Patents

편광 웨이퍼 검사를 위한 방법 및 장치 Download PDF

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KR102182566B1
KR102182566B1 KR1020187031105A KR20187031105A KR102182566B1 KR 102182566 B1 KR102182566 B1 KR 102182566B1 KR 1020187031105 A KR1020187031105 A KR 1020187031105A KR 20187031105 A KR20187031105 A KR 20187031105A KR 102182566 B1 KR102182566 B1 KR 102182566B1
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defect
polarization
wave plate
map
incident beam
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KR20180121667A (ko
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셩 리우
구오헝 자오
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케이엘에이 코포레이션
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    • H01L22/12—
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • H01L22/20—
    • H01L22/30—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G01N2021/8848—Polarisation of light
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/06—Illumination; Optics
    • G01N2201/068—Optics, miscellaneous
    • G01N2201/0683—Brewster plate; polarisation controlling elements

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
KR1020187031105A 2016-03-28 2017-03-27 편광 웨이퍼 검사를 위한 방법 및 장치 Active KR102182566B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662314362P 2016-03-28 2016-03-28
US62/314,362 2016-03-28
US15/468,608 US9874526B2 (en) 2016-03-28 2017-03-24 Methods and apparatus for polarized wafer inspection
US15/468,608 2017-03-24
PCT/US2017/024326 WO2017172624A1 (en) 2016-03-28 2017-03-27 Method and apparatus for polarized light wafer inspection

Publications (2)

Publication Number Publication Date
KR20180121667A KR20180121667A (ko) 2018-11-07
KR102182566B1 true KR102182566B1 (ko) 2020-11-24

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Country Status (7)

Country Link
US (2) US9874526B2 (https=)
JP (1) JP6755323B2 (https=)
KR (1) KR102182566B1 (https=)
CN (1) CN109075091B (https=)
IL (1) IL261450B (https=)
TW (1) TWI724144B (https=)
WO (1) WO2017172624A1 (https=)

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5216752B2 (ja) * 2009-11-18 2013-06-19 株式会社日立ハイテクノロジーズ 欠陥検出方法及び欠陥検出装置並びにこれを備えた欠陥観察装置
US9995850B2 (en) 2013-06-06 2018-06-12 Kla-Tencor Corporation System, method and apparatus for polarization control
US9874526B2 (en) * 2016-03-28 2018-01-23 Kla-Tencor Corporation Methods and apparatus for polarized wafer inspection
KR20180028787A (ko) * 2016-09-09 2018-03-19 삼성전자주식회사 디펙 검사 시스템과 방법, 및 그 검사 방법을 이용한 반도체 소자 제조방법
JP2018072290A (ja) * 2016-11-04 2018-05-10 ルネサスエレクトロニクス株式会社 故障箇所特定装置および故障箇所特定方法
US10234402B2 (en) * 2017-01-05 2019-03-19 Kla-Tencor Corporation Systems and methods for defect material classification
US11029253B2 (en) * 2017-03-30 2021-06-08 Applied Materials Israel Ltd. Computerized method for configuring an inspection system, computer program product and an inspection system
WO2018227031A1 (en) 2017-06-08 2018-12-13 Rudolph Technologies, Inc. Wafer inspection system including a laser triangulation sensor
US10168273B1 (en) * 2017-07-01 2019-01-01 Kla-Tencor Corporation Methods and apparatus for polarizing reticle inspection
JP6924645B2 (ja) * 2017-07-31 2021-08-25 日東電工株式会社 偏光フィルムの撮像装置、及び検査装置、並びに検査方法
US10677586B2 (en) * 2018-07-27 2020-06-09 Kla-Tencor Corporation Phase revealing optical and X-ray semiconductor metrology
EP3608653B1 (en) * 2018-08-06 2024-03-13 Institut von Karman de Dynamique des Fluides, AISBL Apparatus and method for measuring particle size using backscattered light
DE102018128083A1 (de) 2018-11-09 2020-05-14 Leica Microsystems Cms Gmbh Mikroskopisches Durchlichtkontrastierverfahren
US10942135B2 (en) * 2018-11-14 2021-03-09 Kla Corporation Radial polarizer for particle detection
US12025569B2 (en) 2018-12-27 2024-07-02 Hitachi High-Tech Corporation Defect inspection device and inspection method, and optical module
CN109860069B (zh) * 2019-01-31 2022-03-08 上海华虹宏力半导体制造有限公司 晶圆的测试方法
US10948423B2 (en) 2019-02-17 2021-03-16 Kla Corporation Sensitive particle detection with spatially-varying polarization rotator and polarizer
TWI716821B (zh) * 2019-02-22 2021-01-21 世界先進積體電路股份有限公司 晶圓結構
US11600497B2 (en) * 2019-04-06 2023-03-07 Kla Corporation Using absolute Z-height values for synergy between tools
WO2020215199A1 (zh) * 2019-04-23 2020-10-29 合刃科技（深圳）有限公司 一种表面缺陷检测系统及方法
US11703460B2 (en) * 2019-07-09 2023-07-18 Kla Corporation Methods and systems for optical surface defect material characterization
WO2021209273A1 (en) * 2020-04-15 2021-10-21 Asml Holding N.V. Contaminant analyzing metrology system, lithographic apparatus, and methods thereof
US11105740B2 (en) 2019-10-22 2021-08-31 Applied Materials Israel Ltd. Optical inspection
CN112748126A (zh) * 2019-10-31 2021-05-04 芯恩（青岛）集成电路有限公司 晶圆检测系统及检测方法
US11397153B2 (en) * 2019-12-03 2022-07-26 Kla Corporation Apparatus and method for gray field imaging
US11474437B2 (en) * 2020-04-28 2022-10-18 Applied Materials Israel Ltd. Increasing signal-to-noise ratio in optical imaging of defects on unpatterned wafers
US11525777B2 (en) * 2020-04-28 2022-12-13 Applied Materials Israel Ltd. Optimizing signal-to-noise ratio in optical imaging of defects on unpatterned wafers
US11710227B2 (en) 2020-06-19 2023-07-25 Kla Corporation Design-to-wafer image correlation by combining information from multiple collection channels
WO2022002939A1 (en) * 2020-06-30 2022-01-06 Universiteit Gent A method to produce a matched pair of polarizing filters and a method and apparatus to determine the concentration of birefringent particles using a pair of polarizing filters
CN111929310B (zh) * 2020-09-25 2021-02-05 歌尔股份有限公司 表面缺陷检测方法、装置、设备及存储介质
CN112347527B (zh) * 2020-11-09 2022-06-03 武汉科技大学 一种用于暗场缺陷检测的光罩掩模板图形设计方法
CN112464829B (zh) * 2020-12-01 2024-04-09 中航航空电子有限公司 一种瞳孔定位方法、设备、存储介质及视线追踪系统
US11879853B2 (en) * 2021-02-19 2024-01-23 Kla Corporation Continuous degenerate elliptical retarder for sensitive particle detection
US11546508B1 (en) * 2021-07-21 2023-01-03 Black Sesame Technologies Inc. Polarization imaging system with super resolution fusion
CN113916798B (zh) * 2021-10-11 2023-06-06 北京航空航天大学 一种适用于典型偏振多谱段探测系统的信噪比估算方法
US11796783B2 (en) * 2021-10-20 2023-10-24 Applied Materials Israel Ltd. Optical inspection using controlled illumination and collection polarization
US12399133B2 (en) 2021-10-20 2025-08-26 Applied Materials Israel Ltd. Optical inspection using controlled illumination and collection polarization
US12306109B2 (en) 2021-11-15 2025-05-20 Resonac Corporation Inspection condition presentation apparatus, surface inspection apparatus, inspection condition presentation method and program
US12444630B2 (en) 2021-12-14 2025-10-14 Kla Corporation Single-material waveplates for pupil polarization filtering
CN116482123A (zh) * 2023-06-20 2023-07-25 泉州装备制造研究所 一种光学元件表面微观缺陷检测方法、系统、设备及介质
CN117269193B (zh) * 2023-09-26 2024-06-25 迈沐智能科技(南京)有限公司 合成革表观质量智能化检测方法
WO2025080598A1 (en) * 2023-10-09 2025-04-17 Arizona Board Of Regents On Behalf Of The University Of Arizona Metrology system based on polarization imaging
KR102897512B1 (ko) * 2023-11-06 2025-12-12 한국표준과학연구원 정렬패턴부를 이용한 정렬 및 오차보정 장치
DE102023135353A1 (de) 2023-12-15 2025-06-18 Q.ant GmbH Vorrichtung und Verfahren zur Charakterisierung wenigstens eines Partikels in einem Messvolumen
US20250258096A1 (en) * 2024-02-09 2025-08-14 Applied Materials, Inc. Phase masking for polarization and optical signal control in optical inspection systems
KR20250138004A (ko) * 2024-03-12 2025-09-19 삼성전자주식회사 광학 검사 장치, 광학 검사 방법, 및 광학 검사 장치를 포함하는 광학 검사 시스템
US12292374B1 (en) 2024-03-28 2025-05-06 Camtek Ltd. Crystallographic defect inspection
US20250322678A1 (en) * 2024-04-11 2025-10-16 Fei Company Sample support grid recognition
US20260009739A1 (en) * 2024-07-02 2026-01-08 Kla Corporation Polarization control and optimization for photomask defect detection

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130114085A1 (en) 2011-10-27 2013-05-09 Kla-Tencor Corporation Dynamically Adjustable Semiconductor Metrology System
US20130114880A1 (en) 2010-06-08 2013-05-09 Shunichi Matsumoto Method and apparatus for inspecting defect
US20140009759A1 (en) 2010-12-16 2014-01-09 Kla-Tencor Corporation Wafer Inspection

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4740708A (en) 1987-01-06 1988-04-26 International Business Machines Corporation Semiconductor wafer surface inspection apparatus and method
US6118525A (en) 1995-03-06 2000-09-12 Ade Optical Systems Corporation Wafer inspection system for distinguishing pits and particles
US6034776A (en) 1997-04-16 2000-03-07 The United States Of America As Represented By The Secretary Of Commerce Microroughness-blind optical scattering instrument
US6924893B2 (en) * 2002-05-13 2005-08-02 Marine Biological Laboratory Enhancing polarized light microscopy
JP4183492B2 (ja) * 2002-11-27 2008-11-19 株式会社日立製作所 欠陥検査装置および欠陥検査方法
US7006224B2 (en) * 2002-12-30 2006-02-28 Applied Materials, Israel, Ltd. Method and system for optical inspection of an object
US7710564B1 (en) 2007-09-03 2010-05-04 Kla-Tencor Corporation Polarized broadband wafer inspection
JP2009180702A (ja) * 2008-02-01 2009-08-13 Nikon Corp 欠陥検査装置の調整方法、欠陥検査装置の調整状態の評価方法、及びパターンの方位角の設定方法
JP5216752B2 (ja) * 2009-11-18 2013-06-19 株式会社日立ハイテクノロジーズ 欠陥検出方法及び欠陥検出装置並びにこれを備えた欠陥観察装置
JP2012117814A (ja) * 2010-11-29 2012-06-21 Hitachi High-Technologies Corp 欠陥検査装置および欠陥検査方法
US9279774B2 (en) * 2011-07-12 2016-03-08 Kla-Tencor Corp. Wafer inspection
US9239295B2 (en) 2012-04-09 2016-01-19 Kla-Tencor Corp. Variable polarization wafer inspection
US20150069247A1 (en) * 2012-04-17 2015-03-12 Nanyang Technologial University Method and system for real time inspection of a silicon wafer
JP2015206642A (ja) * 2014-04-18 2015-11-19 株式会社日立ハイテクノロジーズ 欠陥観察方法及びその装置
JP6369860B2 (ja) * 2014-07-15 2018-08-08 株式会社日立ハイテクノロジーズ 欠陥観察方法及びその装置
US9874526B2 (en) 2016-03-28 2018-01-23 Kla-Tencor Corporation Methods and apparatus for polarized wafer inspection

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130114880A1 (en) 2010-06-08 2013-05-09 Shunichi Matsumoto Method and apparatus for inspecting defect
US20140009759A1 (en) 2010-12-16 2014-01-09 Kla-Tencor Corporation Wafer Inspection
US20130114085A1 (en) 2011-10-27 2013-05-09 Kla-Tencor Corporation Dynamically Adjustable Semiconductor Metrology System

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Publication number Publication date
TWI724144B (zh) 2021-04-11
JP6755323B2 (ja) 2020-09-16
US9874526B2 (en) 2018-01-23
KR20180121667A (ko) 2018-11-07
US20170276613A1 (en) 2017-09-28
IL261450A (en) 2018-10-31
CN109075091A (zh) 2018-12-21
US10228331B2 (en) 2019-03-12
US20180364177A1 (en) 2018-12-20
CN109075091B (zh) 2020-03-24
TW201801217A (zh) 2018-01-01
JP2019516065A (ja) 2019-06-13
IL261450B (en) 2021-06-30
WO2017172624A1 (en) 2017-10-05

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