JP6755323B2 - 偏光形ウエハ検査のための方法及び装置 - Google Patents

偏光形ウエハ検査のための方法及び装置 Download PDF

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JP6755323B2
JP6755323B2 JP2018541392A JP2018541392A JP6755323B2 JP 6755323 B2 JP6755323 B2 JP 6755323B2 JP 2018541392 A JP2018541392 A JP 2018541392A JP 2018541392 A JP2018541392 A JP 2018541392A JP 6755323 B2 JP6755323 B2 JP 6755323B2
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defect
polarization
wave plate
scattering
irradiation
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JP2019516065A5 (https=
JP2019516065A (ja
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シェン リウ
シェン リウ
グオヘン ツァオ
グオヘン ツァオ
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KLA Corp
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KLA Corp
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8806Specially adapted optical and illumination features
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21Polarisation-affecting properties
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27Structural arrangements therefor
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8806Specially adapted optical and illumination features
    • G01N2021/8848Polarisation of light
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00Features of devices classified in G01N21/00
    • G01N2201/06Illumination; Optics
    • G01N2201/068Optics, miscellaneous
    • G01N2201/0683Brewster plate; polarisation controlling elements

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
JP2018541392A 2016-03-28 2017-03-27 偏光形ウエハ検査のための方法及び装置 Active JP6755323B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662314362P 2016-03-28 2016-03-28
US62/314,362 2016-03-28
US15/468,608 US9874526B2 (en) 2016-03-28 2017-03-24 Methods and apparatus for polarized wafer inspection
US15/468,608 2017-03-24
PCT/US2017/024326 WO2017172624A1 (en) 2016-03-28 2017-03-27 Method and apparatus for polarized light wafer inspection

Publications (3)

Publication Number Publication Date
JP2019516065A JP2019516065A (ja) 2019-06-13
JP2019516065A5 JP2019516065A5 (https=) 2020-05-07
JP6755323B2 true JP6755323B2 (ja) 2020-09-16

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JP2018541392A Active JP6755323B2 (ja) 2016-03-28 2017-03-27 偏光形ウエハ検査のための方法及び装置

Country Status (7)

Country Link
US (2) US9874526B2 (https=)
JP (1) JP6755323B2 (https=)
KR (1) KR102182566B1 (https=)
CN (1) CN109075091B (https=)
IL (1) IL261450B (https=)
TW (1) TWI724144B (https=)
WO (1) WO2017172624A1 (https=)

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US11474437B2 (en) * 2020-04-28 2022-10-18 Applied Materials Israel Ltd. Increasing signal-to-noise ratio in optical imaging of defects on unpatterned wafers
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CN111929310B (zh) * 2020-09-25 2021-02-05 歌尔股份有限公司 表面缺陷检测方法、装置、设备及存储介质
CN112347527B (zh) * 2020-11-09 2022-06-03 武汉科技大学 一种用于暗场缺陷检测的光罩掩模板图形设计方法
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Also Published As

Publication number Publication date
TWI724144B (zh) 2021-04-11
US9874526B2 (en) 2018-01-23
KR20180121667A (ko) 2018-11-07
US20170276613A1 (en) 2017-09-28
IL261450A (en) 2018-10-31
CN109075091A (zh) 2018-12-21
US10228331B2 (en) 2019-03-12
KR102182566B1 (ko) 2020-11-24
US20180364177A1 (en) 2018-12-20
CN109075091B (zh) 2020-03-24
TW201801217A (zh) 2018-01-01
JP2019516065A (ja) 2019-06-13
IL261450B (en) 2021-06-30
WO2017172624A1 (en) 2017-10-05

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