IL261450B - Method and apparatus for polarized light wafer inspection - Google Patents
Method and apparatus for polarized light wafer inspectionInfo
- Publication number
- IL261450B IL261450B IL261450A IL26145018A IL261450B IL 261450 B IL261450 B IL 261450B IL 261450 A IL261450 A IL 261450A IL 26145018 A IL26145018 A IL 26145018A IL 261450 B IL261450 B IL 261450B
- Authority
- IL
- Israel
- Prior art keywords
- slice
- testing
- polarized light
- polarized
- light
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
- H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/27—Structural arrangements therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
- G01N2021/8848—Polarisation of light
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/06—Illumination; Optics
- G01N2201/068—Optics, miscellaneous
- G01N2201/0683—Brewster plate; polarisation controlling elements
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662314362P | 2016-03-28 | 2016-03-28 | |
| US15/468,608 US9874526B2 (en) | 2016-03-28 | 2017-03-24 | Methods and apparatus for polarized wafer inspection |
| PCT/US2017/024326 WO2017172624A1 (en) | 2016-03-28 | 2017-03-27 | Method and apparatus for polarized light wafer inspection |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IL261450A IL261450A (en) | 2018-10-31 |
| IL261450B true IL261450B (en) | 2021-06-30 |
Family
ID=59898536
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL261450A IL261450B (en) | 2016-03-28 | 2018-08-29 | Method and apparatus for polarized light wafer inspection |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US9874526B2 (https=) |
| JP (1) | JP6755323B2 (https=) |
| KR (1) | KR102182566B1 (https=) |
| CN (1) | CN109075091B (https=) |
| IL (1) | IL261450B (https=) |
| TW (1) | TWI724144B (https=) |
| WO (1) | WO2017172624A1 (https=) |
Families Citing this family (49)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5216752B2 (ja) * | 2009-11-18 | 2013-06-19 | 株式会社日立ハイテクノロジーズ | 欠陥検出方法及び欠陥検出装置並びにこれを備えた欠陥観察装置 |
| US9995850B2 (en) | 2013-06-06 | 2018-06-12 | Kla-Tencor Corporation | System, method and apparatus for polarization control |
| US9874526B2 (en) * | 2016-03-28 | 2018-01-23 | Kla-Tencor Corporation | Methods and apparatus for polarized wafer inspection |
| KR20180028787A (ko) * | 2016-09-09 | 2018-03-19 | 삼성전자주식회사 | 디펙 검사 시스템과 방법, 및 그 검사 방법을 이용한 반도체 소자 제조방법 |
| JP2018072290A (ja) * | 2016-11-04 | 2018-05-10 | ルネサスエレクトロニクス株式会社 | 故障箇所特定装置および故障箇所特定方法 |
| US10234402B2 (en) * | 2017-01-05 | 2019-03-19 | Kla-Tencor Corporation | Systems and methods for defect material classification |
| US11029253B2 (en) * | 2017-03-30 | 2021-06-08 | Applied Materials Israel Ltd. | Computerized method for configuring an inspection system, computer program product and an inspection system |
| WO2018227031A1 (en) | 2017-06-08 | 2018-12-13 | Rudolph Technologies, Inc. | Wafer inspection system including a laser triangulation sensor |
| US10168273B1 (en) * | 2017-07-01 | 2019-01-01 | Kla-Tencor Corporation | Methods and apparatus for polarizing reticle inspection |
| JP6924645B2 (ja) * | 2017-07-31 | 2021-08-25 | 日東電工株式会社 | 偏光フィルムの撮像装置、及び検査装置、並びに検査方法 |
| US10677586B2 (en) * | 2018-07-27 | 2020-06-09 | Kla-Tencor Corporation | Phase revealing optical and X-ray semiconductor metrology |
| EP3608653B1 (en) * | 2018-08-06 | 2024-03-13 | Institut von Karman de Dynamique des Fluides, AISBL | Apparatus and method for measuring particle size using backscattered light |
| DE102018128083A1 (de) | 2018-11-09 | 2020-05-14 | Leica Microsystems Cms Gmbh | Mikroskopisches Durchlichtkontrastierverfahren |
| US10942135B2 (en) * | 2018-11-14 | 2021-03-09 | Kla Corporation | Radial polarizer for particle detection |
| US12025569B2 (en) | 2018-12-27 | 2024-07-02 | Hitachi High-Tech Corporation | Defect inspection device and inspection method, and optical module |
| CN109860069B (zh) * | 2019-01-31 | 2022-03-08 | 上海华虹宏力半导体制造有限公司 | 晶圆的测试方法 |
| US10948423B2 (en) | 2019-02-17 | 2021-03-16 | Kla Corporation | Sensitive particle detection with spatially-varying polarization rotator and polarizer |
| TWI716821B (zh) * | 2019-02-22 | 2021-01-21 | 世界先進積體電路股份有限公司 | 晶圓結構 |
| US11600497B2 (en) * | 2019-04-06 | 2023-03-07 | Kla Corporation | Using absolute Z-height values for synergy between tools |
| WO2020215199A1 (zh) * | 2019-04-23 | 2020-10-29 | 合刃科技（深圳）有限公司 | 一种表面缺陷检测系统及方法 |
| US11703460B2 (en) * | 2019-07-09 | 2023-07-18 | Kla Corporation | Methods and systems for optical surface defect material characterization |
| WO2021209273A1 (en) * | 2020-04-15 | 2021-10-21 | Asml Holding N.V. | Contaminant analyzing metrology system, lithographic apparatus, and methods thereof |
| US11105740B2 (en) | 2019-10-22 | 2021-08-31 | Applied Materials Israel Ltd. | Optical inspection |
| CN112748126A (zh) * | 2019-10-31 | 2021-05-04 | 芯恩（青岛）集成电路有限公司 | 晶圆检测系统及检测方法 |
| US11397153B2 (en) * | 2019-12-03 | 2022-07-26 | Kla Corporation | Apparatus and method for gray field imaging |
| US11474437B2 (en) * | 2020-04-28 | 2022-10-18 | Applied Materials Israel Ltd. | Increasing signal-to-noise ratio in optical imaging of defects on unpatterned wafers |
| US11525777B2 (en) * | 2020-04-28 | 2022-12-13 | Applied Materials Israel Ltd. | Optimizing signal-to-noise ratio in optical imaging of defects on unpatterned wafers |
| US11710227B2 (en) | 2020-06-19 | 2023-07-25 | Kla Corporation | Design-to-wafer image correlation by combining information from multiple collection channels |
| WO2022002939A1 (en) * | 2020-06-30 | 2022-01-06 | Universiteit Gent | A method to produce a matched pair of polarizing filters and a method and apparatus to determine the concentration of birefringent particles using a pair of polarizing filters |
| CN111929310B (zh) * | 2020-09-25 | 2021-02-05 | 歌尔股份有限公司 | 表面缺陷检测方法、装置、设备及存储介质 |
| CN112347527B (zh) * | 2020-11-09 | 2022-06-03 | 武汉科技大学 | 一种用于暗场缺陷检测的光罩掩模板图形设计方法 |
| CN112464829B (zh) * | 2020-12-01 | 2024-04-09 | 中航航空电子有限公司 | 一种瞳孔定位方法、设备、存储介质及视线追踪系统 |
| US11879853B2 (en) * | 2021-02-19 | 2024-01-23 | Kla Corporation | Continuous degenerate elliptical retarder for sensitive particle detection |
| US11546508B1 (en) * | 2021-07-21 | 2023-01-03 | Black Sesame Technologies Inc. | Polarization imaging system with super resolution fusion |
| CN113916798B (zh) * | 2021-10-11 | 2023-06-06 | 北京航空航天大学 | 一种适用于典型偏振多谱段探测系统的信噪比估算方法 |
| US11796783B2 (en) * | 2021-10-20 | 2023-10-24 | Applied Materials Israel Ltd. | Optical inspection using controlled illumination and collection polarization |
| US12399133B2 (en) | 2021-10-20 | 2025-08-26 | Applied Materials Israel Ltd. | Optical inspection using controlled illumination and collection polarization |
| US12306109B2 (en) | 2021-11-15 | 2025-05-20 | Resonac Corporation | Inspection condition presentation apparatus, surface inspection apparatus, inspection condition presentation method and program |
| US12444630B2 (en) | 2021-12-14 | 2025-10-14 | Kla Corporation | Single-material waveplates for pupil polarization filtering |
| CN116482123A (zh) * | 2023-06-20 | 2023-07-25 | 泉州装备制造研究所 | 一种光学元件表面微观缺陷检测方法、系统、设备及介质 |
| CN117269193B (zh) * | 2023-09-26 | 2024-06-25 | 迈沐智能科技(南京)有限公司 | 合成革表观质量智能化检测方法 |
| WO2025080598A1 (en) * | 2023-10-09 | 2025-04-17 | Arizona Board Of Regents On Behalf Of The University Of Arizona | Metrology system based on polarization imaging |
| KR102897512B1 (ko) * | 2023-11-06 | 2025-12-12 | 한국표준과학연구원 | 정렬패턴부를 이용한 정렬 및 오차보정 장치 |
| DE102023135353A1 (de) | 2023-12-15 | 2025-06-18 | Q.ant GmbH | Vorrichtung und Verfahren zur Charakterisierung wenigstens eines Partikels in einem Messvolumen |
| US20250258096A1 (en) * | 2024-02-09 | 2025-08-14 | Applied Materials, Inc. | Phase masking for polarization and optical signal control in optical inspection systems |
| KR20250138004A (ko) * | 2024-03-12 | 2025-09-19 | 삼성전자주식회사 | 광학 검사 장치, 광학 검사 방법, 및 광학 검사 장치를 포함하는 광학 검사 시스템 |
| US12292374B1 (en) | 2024-03-28 | 2025-05-06 | Camtek Ltd. | Crystallographic defect inspection |
| US20250322678A1 (en) * | 2024-04-11 | 2025-10-16 | Fei Company | Sample support grid recognition |
| US20260009739A1 (en) * | 2024-07-02 | 2026-01-08 | Kla Corporation | Polarization control and optimization for photomask defect detection |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4740708A (en) | 1987-01-06 | 1988-04-26 | International Business Machines Corporation | Semiconductor wafer surface inspection apparatus and method |
| US6118525A (en) | 1995-03-06 | 2000-09-12 | Ade Optical Systems Corporation | Wafer inspection system for distinguishing pits and particles |
| US6034776A (en) | 1997-04-16 | 2000-03-07 | The United States Of America As Represented By The Secretary Of Commerce | Microroughness-blind optical scattering instrument |
| US6924893B2 (en) * | 2002-05-13 | 2005-08-02 | Marine Biological Laboratory | Enhancing polarized light microscopy |
| JP4183492B2 (ja) * | 2002-11-27 | 2008-11-19 | 株式会社日立製作所 | 欠陥検査装置および欠陥検査方法 |
| US7006224B2 (en) * | 2002-12-30 | 2006-02-28 | Applied Materials, Israel, Ltd. | Method and system for optical inspection of an object |
| US7710564B1 (en) | 2007-09-03 | 2010-05-04 | Kla-Tencor Corporation | Polarized broadband wafer inspection |
| JP2009180702A (ja) * | 2008-02-01 | 2009-08-13 | Nikon Corp | 欠陥検査装置の調整方法、欠陥検査装置の調整状態の評価方法、及びパターンの方位角の設定方法 |
| JP5216752B2 (ja) * | 2009-11-18 | 2013-06-19 | 株式会社日立ハイテクノロジーズ | 欠陥検出方法及び欠陥検出装置並びにこれを備えた欠陥観察装置 |
| JP5525336B2 (ja) | 2010-06-08 | 2014-06-18 | 株式会社日立ハイテクノロジーズ | 欠陥検査方法および欠陥検査装置 |
| JP2012117814A (ja) * | 2010-11-29 | 2012-06-21 | Hitachi High-Technologies Corp | 欠陥検査装置および欠陥検査方法 |
| US8891079B2 (en) * | 2010-12-16 | 2014-11-18 | Kla-Tencor Corp. | Wafer inspection |
| US9279774B2 (en) * | 2011-07-12 | 2016-03-08 | Kla-Tencor Corp. | Wafer inspection |
| US9228943B2 (en) | 2011-10-27 | 2016-01-05 | Kla-Tencor Corporation | Dynamically adjustable semiconductor metrology system |
| US9239295B2 (en) | 2012-04-09 | 2016-01-19 | Kla-Tencor Corp. | Variable polarization wafer inspection |
| US20150069247A1 (en) * | 2012-04-17 | 2015-03-12 | Nanyang Technologial University | Method and system for real time inspection of a silicon wafer |
| JP2015206642A (ja) * | 2014-04-18 | 2015-11-19 | 株式会社日立ハイテクノロジーズ | 欠陥観察方法及びその装置 |
| JP6369860B2 (ja) * | 2014-07-15 | 2018-08-08 | 株式会社日立ハイテクノロジーズ | 欠陥観察方法及びその装置 |
| US9874526B2 (en) | 2016-03-28 | 2018-01-23 | Kla-Tencor Corporation | Methods and apparatus for polarized wafer inspection |
-
2017
- 2017-03-24 US US15/468,608 patent/US9874526B2/en active Active
- 2017-03-27 KR KR1020187031105A patent/KR102182566B1/ko active Active
- 2017-03-27 CN CN201780015093.7A patent/CN109075091B/zh active Active
- 2017-03-27 JP JP2018541392A patent/JP6755323B2/ja active Active
- 2017-03-27 WO PCT/US2017/024326 patent/WO2017172624A1/en not_active Ceased
- 2017-03-28 TW TW106110263A patent/TWI724144B/zh active
- 2017-12-19 US US15/847,249 patent/US10228331B2/en active Active
-
2018
- 2018-08-29 IL IL261450A patent/IL261450B/en active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| TWI724144B (zh) | 2021-04-11 |
| JP6755323B2 (ja) | 2020-09-16 |
| US9874526B2 (en) | 2018-01-23 |
| KR20180121667A (ko) | 2018-11-07 |
| US20170276613A1 (en) | 2017-09-28 |
| IL261450A (en) | 2018-10-31 |
| CN109075091A (zh) | 2018-12-21 |
| US10228331B2 (en) | 2019-03-12 |
| KR102182566B1 (ko) | 2020-11-24 |
| US20180364177A1 (en) | 2018-12-20 |
| CN109075091B (zh) | 2020-03-24 |
| TW201801217A (zh) | 2018-01-01 |
| JP2019516065A (ja) | 2019-06-13 |
| WO2017172624A1 (en) | 2017-10-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FF | Patent granted | ||
| KB | Patent renewed |