KR102175814B1 - Euv 리소그래피용 광학 요소 및 광학 시스템과, 이런 광학 요소를 처리하는 방법 - Google Patents

Euv 리소그래피용 광학 요소 및 광학 시스템과, 이런 광학 요소를 처리하는 방법 Download PDF

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KR102175814B1
KR102175814B1 KR1020157028007A KR20157028007A KR102175814B1 KR 102175814 B1 KR102175814 B1 KR 102175814B1 KR 1020157028007 A KR1020157028007 A KR 1020157028007A KR 20157028007 A KR20157028007 A KR 20157028007A KR 102175814 B1 KR102175814 B1 KR 102175814B1
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layer
hydrogen
optical element
optical
protective layer
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KR20150130410A (ko
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허마누스 헨드리퀴스 페트뤼스 테오도루스 베크만
디르크 하인리히 엠
예뢴 휘예브렉트세
아르놀두스 얀 스톰
티나 그라베르
이레네 아멘트
드라이즈 스미츠
슬라이트 에드윈 테
알렉세이 쿠즈네쵸브
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칼 짜이스 에스엠테 게엠베하
에이에스엠엘 네델란즈 비.브이.
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/14—Protective coatings, e.g. hard coatings
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0891—Ultraviolet [UV] mirrors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Environmental & Geological Engineering (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020157028007A 2013-03-15 2014-01-13 Euv 리소그래피용 광학 요소 및 광학 시스템과, 이런 광학 요소를 처리하는 방법 Active KR102175814B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361792638P 2013-03-15 2013-03-15
DE201310102670 DE102013102670A1 (de) 2013-03-15 2013-03-15 Optisches Element und optisches System für die EUV-Lithographie sowie Verfahren zur Behandlung eines solchen optischen Elements
DE102013102670.2 2013-03-15
US61/792,638 2013-03-15
PCT/EP2014/050471 WO2014139694A1 (en) 2013-03-15 2014-01-13 Optical element and optical system for euv lithography, and method for treating such an optical element

Publications (2)

Publication Number Publication Date
KR20150130410A KR20150130410A (ko) 2015-11-23
KR102175814B1 true KR102175814B1 (ko) 2020-11-09

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KR1020157028007A Active KR102175814B1 (ko) 2013-03-15 2014-01-13 Euv 리소그래피용 광학 요소 및 광학 시스템과, 이런 광학 요소를 처리하는 방법

Country Status (6)

Country Link
US (1) US10690812B2 (https=)
JP (1) JP6382856B2 (https=)
KR (1) KR102175814B1 (https=)
CN (1) CN105074576B (https=)
DE (1) DE102013102670A1 (https=)
WO (1) WO2014139694A1 (https=)

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JP6869242B2 (ja) * 2015-11-19 2021-05-12 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置のためのｅｕｖソースチャンバーおよびガス流れ様式、多層ミラー、およびリソグラフィ装置
DE102015225509A1 (de) * 2015-12-16 2017-06-22 Carl Zeiss Smt Gmbh Reflektives optisches Element
US10128016B2 (en) * 2016-01-12 2018-11-13 Asml Netherlands B.V. EUV element having barrier to hydrogen transport
DE102016208850A1 (de) * 2016-05-23 2017-12-07 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage für die Halbleiterlithographie mit Elementen zur Plasmakonditionierung
DE102016213839A1 (de) 2016-07-27 2016-12-15 Carl Zeiss Smt Gmbh Spiegel für ein mikrolithographisches Projektionsbelichtungssystem und Verfahren zur Bearbeitung eines Spiegels
DE102016213831A1 (de) 2016-07-27 2018-02-01 Carl Zeiss Smt Gmbh Reflektives optisches Element für die EUV-Lithographie
KR102707462B1 (ko) * 2016-09-06 2024-09-23 삼성전자주식회사 포토마스크
DE102016223206A1 (de) 2016-11-23 2017-01-12 Carl Zeiss Smt Gmbh Verfahren zur aufarbeitung reflektiver optischer elemente für ultraviolette strahlung oder weiche röntgenstrahlung
DE102016224200A1 (de) 2016-12-06 2018-06-07 Carl Zeiss Smt Gmbh Verfahren zum Reparieren von reflektiven optischen Elementen für die EUV-Lithographie
DE102016226202A1 (de) * 2016-12-23 2018-06-28 Carl Zeiss Smt Gmbh Optisches Element, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
DE102017200667A1 (de) 2017-01-17 2018-07-19 Carl Zeiss Smt Gmbh Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage oder ein Inspektionssystem
DE102017206256A1 (de) 2017-04-11 2018-10-11 Carl Zeiss Smt Gmbh Wellenfrontkorrekturelement zur Verwendung in einem optischen System
DE102017213181A1 (de) * 2017-07-31 2019-01-31 Carl Zeiss Smt Gmbh Optische Anordnung für EUV-Strahlung mit einer Abschirmung zum Schutz vor der Ätzwirkung eines Plasmas
DE102017213176A1 (de) 2017-07-31 2017-09-21 Carl Zeiss Smt Gmbh Optisches Element für die EUV-Lithographie und EUV-Lithographiesystem damit
KR102402767B1 (ko) * 2017-12-21 2022-05-26 삼성전자주식회사 극자외선 마스크 블랭크, 극자외선 마스크 블랭크를 이용하여 제조된 포토마스크, 포토마스크를 이용한 리소그래피 장치 및 포토마스크를 이용한 반도체 장치 제조 방법
DE102018211980A1 (de) * 2018-07-18 2019-09-05 Carl Zeiss Smt Gmbh Reflektives optisches Element
DE102018221190A1 (de) * 2018-12-07 2020-06-10 Carl Zeiss Smt Gmbh Verfahren zum Bilden von Nanostrukturen an einer Oberfläche und Wafer-Inspektionssystem
TWI833025B (zh) 2019-06-20 2024-02-21 日商Ｈｏｙａ股份有限公司 反射型遮罩基底、反射型遮罩、以及反射型遮罩及半導體裝置之製造方法
DE102019212910A1 (de) * 2019-08-28 2021-03-04 Carl Zeiss Smt Gmbh Optisches Element und EUV-Lithographiesystem
DE102019213349A1 (de) 2019-09-03 2021-03-04 Carl Zeiss Smt Gmbh Spiegelanordnung mit Wasserstoff-Barriere und optische Anordnung
JP7587378B2 (ja) * 2019-09-30 2024-11-20 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
DE102020206117A1 (de) 2020-05-14 2021-11-18 Carl Zeiss Smt Gmbh Optisches Element, EUV-Lithographiesystem und Verfahren zum Bilden von Nanopartikeln
US12510692B2 (en) 2020-08-27 2025-12-30 Kla Corporation Protection of optical materials of optical components from radiation degradation
US11402743B2 (en) * 2020-08-31 2022-08-02 Taiwan Semiconductor Manufacturing Co., Ltd. Mask defect prevention
KR20220123918A (ko) * 2021-03-02 2022-09-13 에스케이하이닉스 주식회사 극자외선 마스크 및 극자외선 마스크를 이용하여 제조된 포토마스크
DE102022202059A1 (de) * 2022-03-01 2023-09-07 Carl Zeiss Smt Gmbh Verfahren zum Bearbeiten eines Werkstücks
DE102024111387A1 (de) 2023-05-30 2024-12-05 Carl Zeiss Smt Gmbh EUV-Lithographiesystem und Verfahren zum Herstellen eines optischen Elements und/oder eines nicht-optischen Bauteils

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US20040002009A1 (en) * 2002-06-27 2004-01-01 Pei-Yang Yan Re-usable extreme ultraviolet lithography multilayer mask blank
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JP2006173490A (ja) * 2004-12-17 2006-06-29 Nikon Corp 光学素子及びこれを用いた投影露光装置

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Publication number Publication date
US10690812B2 (en) 2020-06-23
KR20150130410A (ko) 2015-11-23
US20160187543A1 (en) 2016-06-30
JP2016509270A (ja) 2016-03-24
CN105074576A (zh) 2015-11-18
DE102013102670A1 (de) 2014-10-02
WO2014139694A1 (en) 2014-09-18
CN105074576B (zh) 2018-03-20
JP6382856B2 (ja) 2018-08-29

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