JP2016509270A - Euvリソグラフィー用の光学素子及び光学系、及びこの光学系を処理する方法 - Google Patents
Euvリソグラフィー用の光学素子及び光学系、及びこの光学系を処理する方法 Download PDFInfo
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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Abstract
Description
本願は独国特許出願第102013102670.2号、2013年3月15日に基づいて優先権を主張し、その全開示を本願の一部と考え、参照する形で本願の開示に含める。
本発明は光学素子に関するものであり、この光学素子は、基板と、この基板に付加されたEUV放射反射多層系と、この多層系に付加され、少なくとも第1及び第2層を有する保護層系とを具え、第1層は第2層よりも多層系の近くに配置されている。特に第1層は、多層系に隣接して配置することができる。本発明は、少なくとも1つのこうした光学素子を具えたEUVリソグラフィー用の光学系、及びEUVリソグラフィー用の光学素子を処理する方法にも関するものである。
本発明の目的は、反応性水素の存在下で使用することができるEUVリソグラフィー用の光学素子、及びこうした光学素子を具えた光学系を提供することにある。また、本発明の目的は、反応性水素の存在下で光学素子の恒久的な動作を可能にする、光学素子を処理する方法を規定することにある。
この目的は、EUV放射を反射する多層系、及びこの多層系に付加され、少なくとも第1及び第2層を有する保護層系を具えた光学素子によって達成され、多層系のより近くにある第1層は、多層系からより遠く離れた第2層よりも水素の溶解度が低い。
Claims (15)
- 基板(52)と、
前記基板(52)に付加されたEUV放射反射多層系(51)と、
前記多層系(51)に付加され、少なくとも第1層及び第2層(57, 58)を有する保護層系(60)とを具え、
前記第1層(57)は、前記第2層(58)よりも前記多層系(51)の近くに配置され、前記第1層(57)は前記第2層(58)よりも水素の溶解度が低く、前記第1層(57)はアモルファス材料または単結晶材料で形成されることを特徴とする光学素子。 - 前記第1層(57)における水素の溶解度s1について、次式:ln(s1)<3が成り立ち、及び/または、前記第2層(58)における水素の溶解度s2について、次式:ln(s2)>5が成り立つことを特徴とする請求項1に記載の光学素子。
- 前記第1層(57)が、Mo、Ru、Ir、Ni、Fe、Co、Cuから成るグループから選択した材料で形成されることを特徴とする請求項1または2に記載の光学素子。
- 前記第1層(57)が、0.3nm〜10nmの厚さ(d1)、好適には0.3nmから2nmの厚さを有することを特徴とする請求項1〜3のいずれかに記載の光学素子。
- 前記第2層(58)が、多結晶材料及び/または開孔材料で形成されることを特徴とする請求項1〜4のいずれかに記載の光学素子。
- 前記第2層(58)が、Zr、Ti、Th、V、Pdから成るグループから選択した材料で形成されることを特徴とする請求項1〜5のいずれかに記載の光学素子。
- 前記第2層(58)が、5nm〜25nmの厚さ(d2)を有することを特徴とする請求項1〜6のいずれかに記載の光学素子。
- 前記第2層(58)が、10nm〜15nmの厚さ(d2)を有することを特徴とする請求項1〜7のいずれかに記載の光学素子。
- 前記保護層系(60)が最上の第3層(59)を有し、この第3層は、350Kの温度で、10-27cm4/(原子・s)以上、特に10-19cm4/(原子・s)以上である水素の再結合速度(kr)を有する材料で形成されることを特徴とする請求項1の前文、特に請求項1〜8のいずれかに記載の光学素子。
- 前記最上の第3層(59)の材料が、Mo、Ru、Cu、Ni、Fe、Pd、V、Nb、及びこれらの酸化物から成るグループから選択した材料であることを特徴とする請求項9に記載の光学素子。
- 前記第1層(57)、前記第2層(58)、及び/または前記第3層(59)が、金属または金属酸化物で形成されることを特徴とする請求項1〜10のいずれかに記載の光学素子。
- 集光ミラー(7)として形成されていることを特徴とする請求項1〜11のいずれかに記載の光学素子。
- 請求項1〜12のいずれかに記載の光学素子(7, 9, 10, 11, 13, 14, 50)を少なくとも1つ具えていることを特徴とするEUVリソグラフィー用の光学系。
- 基板(52)と、前記基板(52)に付加されたEUV放射反射多層系(51)と、前記多層系(51)に付加された保護層系(60)とを具えた光学素子(50)を処理する方法であって、
前記保護層系(60)の少なくとも1つの層(57, 58, 59)及び/または前記多層系(51)の少なくとも1つの層(54, 55)から、当該層内に含まれる水素を抽出するように前記光学素子(50)を処理するステップを含むことを特徴とする方法。 - 前記層内に含まれる水素を抽出することが、前記光学素子(50)を、50℃以上の温度、好適には100℃以上の温度まで加熱することを含むことを特徴とする請求項14に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
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US201361792638P | 2013-03-15 | 2013-03-15 | |
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DE201310102670 DE102013102670A1 (de) | 2013-03-15 | 2013-03-15 | Optisches Element und optisches System für die EUV-Lithographie sowie Verfahren zur Behandlung eines solchen optischen Elements |
US61/792,638 | 2013-03-15 | ||
PCT/EP2014/050471 WO2014139694A1 (en) | 2013-03-15 | 2014-01-13 | Optical element and optical system for euv lithography, and method for treating such an optical element |
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JP2018536199A (ja) * | 2015-11-19 | 2018-12-06 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置のためのeuvソースチャンバーおよびガス流れ様式、多層ミラー、およびリソグラフィ装置 |
JP2020504327A (ja) * | 2016-12-23 | 2020-02-06 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 特にマイクロリソグラフィ投影露光装置のための光学素子 |
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JP2018536199A (ja) * | 2015-11-19 | 2018-12-06 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置のためのeuvソースチャンバーおよびガス流れ様式、多層ミラー、およびリソグラフィ装置 |
JP2020504327A (ja) * | 2016-12-23 | 2020-02-06 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 特にマイクロリソグラフィ投影露光装置のための光学素子 |
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WO2020256064A1 (ja) * | 2019-06-20 | 2020-12-24 | Hoya株式会社 | 反射型マスクブランク、反射型マスク、並びに反射型マスク及び半導体装置の製造方法 |
JP7503057B2 (ja) | 2019-06-20 | 2024-06-19 | Hoya株式会社 | 反射型マスクブランク、反射型マスク、並びに反射型マスク及び半導体装置の製造方法 |
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KR20150130410A (ko) | 2015-11-23 |
KR102175814B1 (ko) | 2020-11-09 |
CN105074576B (zh) | 2018-03-20 |
JP6382856B2 (ja) | 2018-08-29 |
DE102013102670A1 (de) | 2014-10-02 |
CN105074576A (zh) | 2015-11-18 |
US10690812B2 (en) | 2020-06-23 |
WO2014139694A1 (en) | 2014-09-18 |
US20160187543A1 (en) | 2016-06-30 |
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