KR102175076B1 - Apparatus and Method for treating substrate - Google Patents

Abstract

An embodiment of the present invention provides an apparatus and method for liquid processing a substrate.
The apparatus for liquid processing a substrate includes a substrate support unit that supports and rotates a substrate, and a liquid supply unit that supplies a liquid onto a substrate supported by the substrate support unit, wherein the liquid supply unit forms a liquid film of a photosensitive liquid on the substrate. A photoresist nozzle for supplying a photoresist so as to be possible, and an integrated nozzle for processing an upper surface edge region of the substrate and a bottom surface of the substrate, wherein the integrated nozzle is provided on the body and the body, and the photosensitive solution is applied to the upper surface edge region of the substrate. And an upper discharge line for supplying a removal liquid to be removed, and a lower discharge line provided on the body and supplying a cleaning liquid to a bottom surface of the substrate. The liquid is supplied to each of the upper and lower surfaces of the substrate, and a reduced pressure atmosphere is formed on the side of the substrate. As a result, it is possible to prevent the removal liquid and the cleaning liquid from scattering and contaminating the substrate or contaminating the surroundings thereof.

Description

Substrate processing apparatus and method {Apparatus and Method for treating substrate}

The present invention relates to an apparatus and method for liquid processing a substrate.

In order to manufacture a semiconductor device, various processes such as cleaning, deposition, photography, etching, and ion implantation are performed. Among these processes, the photographic process sequentially performs coating, exposure, and development steps. The coating process is a process of applying a photosensitive liquid such as a resist to the surface of the substrate. The exposure process is a process of exposing a circuit pattern on a substrate on which a photosensitive film is formed. In the developing process, the exposed area of the substrate is selectively developed.

In general, the application process includes a photoresist supplying step and a liquid film removal step. In the step of supplying a photoresist, a photosensitive film is formed by applying a photoresist to the entire area of the substrate. In the liquid film removal step, a removal liquid is supplied to remove some areas of the photosensitive film formed on the substrate. In the liquid film removal step, a removal liquid and a cleaning liquid are supplied to the edge region of the substrate. A removal liquid for removing the liquid film is supplied to the upper surface of the substrate, and a cleaning liquid is supplied to the bottom surface.

The removal liquid and the cleaning liquid are sequentially supplied. For this reason, it takes a lot of time to remove the liquid film. Accordingly, a method of simultaneously supplying the removal liquid and the cleaning liquid has been proposed.

However, as shown in FIG. 1, the removal liquid L1 and the cleaning liquid L2 are scattered from each other in the process of being recovered, and the scattering liquid falls without reaching the recovery area. As a result, the flying liquid back-contaminates the substrate or contaminates peripheral devices.

An object of the present invention is to prevent liquids from being scattered when a substrate removal liquid and a cleaning liquid are supplied, and the scattering liquid reversely contaminates the substrate or contaminates its surroundings.

In addition, an object of the present invention is an apparatus and method capable of shortening the time required for the liquid film removal process.

An embodiment of the present invention provides an apparatus and method for liquid processing a substrate.

The apparatus for liquid processing a substrate includes a substrate support unit that supports and rotates a substrate, and a liquid supply unit that supplies a liquid onto a substrate supported by the substrate support unit, wherein the liquid supply unit forms a liquid film of a photosensitive liquid on the substrate. A photoresist nozzle for supplying a photoresist so as to be possible, and an integrated nozzle for processing an upper surface edge region of the substrate and a bottom surface of the substrate, wherein the integrated nozzle is provided on the body and the body, and the photosensitive solution is applied to the upper surface edge region of the substrate. And an upper discharge line for supplying a removal liquid to be removed, and a lower discharge line provided on the body and supplying a cleaning liquid to a bottom surface of the substrate.

The body has a base, an upper body coupled to the base, and a lower body disposed below the upper body and coupled to the base, the upper discharge line is formed on the upper body, and the lower discharge line is formed on the lower body Can be.

Each of the upper body and the lower body may be angle-adjustable with respect to the base so that the discharge angle of the photosensitive liquid and the cleaning liquid can be changed with respect to the substrate. Each of the upper body and the lower body may be hinged to the base.

The integrated nozzle may further include a discharge line for discharging the removal liquid and by-products removed by the removal liquid, and a pressure reducing member may be connected to the discharge line. The discharge line may be formed on the base.

The edge region of the substrate placed on the substrate support unit is provided to be inserted between the upper body and the lower body, and the upper body is provided to be inclined upward as a distance from the base, and the lower body is provided to be inclined downward as a distance from the base Can be.

When the edge region of the substrate is inserted between the upper body and the lower body, the base is provided at a height opposite to the substrate, and one surface of the base facing the substrate is adjacent to the substrate along the circumferential direction of the substrate. It is provided to be rounded to have the same distance, and the outlet of the discharge line may be provided in a slit shape on the one surface.

The discharge port of the lower discharge line may be formed at a position farther from the base than the discharge port of the upper discharge line.

When the substrate is inserted into the upper body and the lower body, the upper discharge line and the lower discharge line are spaced farther from the center of the substrate than the point on the substrate from which the removal liquid is discharged. It can be provided as possible.

The upper discharge line and the lower discharge line may be provided so that the discharge angle of the removal liquid and the discharge angle of the cleaning liquid are different from each other with respect to the substrate. The discharge angle of the upper discharge line with respect to the substrate may be provided larger than the discharge angle of the lower discharge line.

The removal liquid and the cleaning liquid include thinner, and the concentration of thinner in the removal liquid may be different from the concentration of thinner in the cleaning liquid.

The method of processing a substrate includes forming a liquid film of the photosensitive liquid on the substrate by applying a photosensitive liquid on the substrate, and after forming the liquid film of the photosensitive liquid, the integrated nozzle of any one of claims 1 to 8 A removal liquid for removing the photoresist is supplied to an edge region of the upper surface of the substrate, and a cleaning liquid for cleaning the bottom surface of the substrate is supplied. ,

The removal liquid and the cleaning liquid may be simultaneously discharged.

According to an exemplary embodiment of the present invention, the liquid is supplied to each of the upper and lower surfaces of the substrate, and a reduced pressure atmosphere is formed on the side of the substrate. As a result, it is possible to prevent the removal liquid and the cleaning liquid from scattering and contaminating the substrate or contaminating the surroundings thereof.

In addition, according to the exemplary embodiment of the present invention, the removal liquid has a higher density than the cleaning liquid, thereby increasing the removal efficiency of the upper surface, and the cleaning liquid has a higher volatility than the removal liquid, thereby increasing the contact area of the bottom surface of the substrate.

Further, according to the embodiment of the present invention, the cleaning liquid and the removal liquid are simultaneously discharged. Accordingly, the time required for the liquid film removal process can be shortened.

1 is a view showing a general liquid film removal process.
2 is a perspective view schematically showing a substrate processing apparatus according to an embodiment of the present invention.
3 is a cross-sectional view of a substrate processing apparatus showing the coating block or the developing block of FIG. 2.
4 is a plan view of the substrate processing apparatus of FIG. 2.
5 is a diagram illustrating an example of a hand of the transfer robot of FIG. 4.
6 is a plan view schematically showing an example of the heat treatment chamber of FIG. 4.
7 is a front view of the heat treatment chamber of FIG. 6.
8 is a diagram schematically showing an example of the liquid processing chamber of FIG. 4.
9 is a plan view showing the liquid processing chamber of FIG. 8.
10 is a perspective view showing the integrated nozzle of FIG. 8.
11 to 16 are views illustrating a process of processing the substrate of FIG. 8.
17 is a perspective view showing another embodiment of the integrated nozzle of FIG. 10.

Hereinafter, embodiments of the present invention will be described in more detail with reference to the accompanying drawings. The embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. This embodiment is provided to more completely explain the present invention to those with average knowledge in the industry. Therefore, the shape of the element in the drawings is exaggerated to emphasize a more clear description.

2 is a perspective view schematically showing a substrate processing apparatus according to an embodiment of the present invention, FIG. 3 is a cross-sectional view of the substrate processing apparatus showing a coating block or a developing block of FIG. 2, and FIG. 4 is a substrate processing apparatus of FIG. It is a top view.

Referring to FIGS. 2 to 4, the substrate processing apparatus 1 includes an index module 20, a treating module 30, and an interface module 40. According to an embodiment, the index module 20, the processing module 30, and the interface module 40 are sequentially arranged in a row. Hereinafter, the direction in which the index module 20, the processing module 30, and the interface module 40 are arranged is referred to as the first direction 12, and the direction perpendicular to the first direction 12 when viewed from the top is referred to as The second direction 14 is referred to as, and a direction perpendicular to both the first direction 12 and the second direction 14 is referred to as the third direction 16.

The index module 20 transfers the substrate W from the container 10 in which the substrate W is stored to the processing module 30, and stores the processed substrate W into the container 10. The longitudinal direction of the index module 20 is provided in the second direction 14. The index module 20 has a load port 22 and an index frame 24. The load port 22 is located on the opposite side of the processing module 30 based on the index frame 24. The container 10 in which the substrates W are accommodated is placed on the load port 22. A plurality of load ports 22 may be provided, and a plurality of load ports 22 may be disposed along the second direction 14.

As the container 10, a container 10 for sealing such as a front open unified pod (FOUP) may be used. The container 10 may be placed on the load port 22 by an operator or a transport means (not shown) such as an overhead transfer, an overhead conveyor, or an automatic guided vehicle. I can.

An index robot 2200 is provided inside the index frame 24. In the index frame 24, a guide rail 2300 in which the longitudinal direction is provided in the second direction 14 may be provided, and the index robot 2200 may be provided to be movable on the guide rail 2300. The index robot 2200 includes a hand 2220 on which the substrate W is placed, and the hand 2220 moves forward and backward, rotates about the third direction 16, and performs a third direction 16. It may be provided to be movable along the way.

The processing module 30 performs a coating process and a developing process on the substrate W. The processing module 30 has a coating block 30a and a developing block 30b. The coating block 30a performs a coating process on the substrate W, and the developing block 30b performs a developing process on the substrate W. A plurality of coating blocks 30a are provided, and they are provided to be stacked on each other. A plurality of developing blocks 30b are provided, and the developing blocks 30b are provided to be stacked on each other. According to the embodiment of FIG. 3, two coating blocks 30a are provided, and two developing blocks 30b are provided. The coating blocks 30a may be disposed under the developing blocks 30b. According to an example, the two coating blocks 30a perform the same process and may be provided in the same structure. In addition, the two developing blocks 30b perform the same process with each other, and may be provided with the same structure.

Referring to FIG. 4, the coating block 30a includes a heat treatment chamber 3200, a transfer chamber 3400, a liquid processing chamber 3600, and a buffer chamber 3800. The heat treatment chamber 3200 performs a heat treatment process on the substrate W. The heat treatment process may include a cooling process and a heating process. The liquid processing chamber 3600 supplies a liquid on the substrate W to form a liquid film. The liquid film may be a photoresist film or an antireflection film. The transfer chamber 3400 transfers the substrate W between the heat treatment chamber 3200 and the liquid processing chamber 3600 within the coating block 30a.

The conveying chamber 3400 is provided with its longitudinal direction parallel to the first direction 12. A transfer robot 3422 is provided in the transfer chamber 3400. The transfer robot 3422 transfers the substrate between the heat treatment chamber 3200, the liquid treatment chamber 3600, and the buffer chamber 3800. According to an example, the transfer robot 3422 has a hand 3420 on which a substrate W is placed, and the hand 3420 moves forward and backward, a rotation about the third direction 16, and a third direction. It may be provided to be movable along (16). In the transfer chamber 3400, a guide rail 3300 whose longitudinal direction is provided parallel to the first direction 12 may be provided, and the transfer robot 3422 may be provided to be movable on the guide rail 3300. .

5 is a diagram illustrating an example of a hand of the transfer robot of FIG. 4. Referring to FIG. 5, the hand 3420 has a base 3428 and a support protrusion 3429. The base 3428 may have an annular ring shape in which a part of the circumference is bent. The base 3428 has an inner diameter larger than the diameter of the substrate W. The support protrusion 3429 extends inwardly from the base 3428. A plurality of support protrusions 3429 are provided and support an edge region of the substrate W. According to an example, four support protrusions 3429 may be provided at equal intervals.

The heat treatment chamber 3200 is provided in plural. 3 and 4, the heat treatment chambers 3200 are arranged to be arranged along the first direction 12. The heat treatment chambers 3200 are located on one side of the transfer chamber 3400.

6 is a plan view schematically showing an example of the heat treatment chamber of FIG. 4, and FIG. 7 is a front view of the heat treatment chamber of FIG. 6. The heat treatment chamber 3200 has a housing 3210, a cooling unit 3220, a heating unit 3230, and a conveying plate 3240.

The housing 3210 is generally provided in the shape of a rectangular parallelepiped. A carrying port (not shown) through which the substrate W enters and exits is formed on the sidewall of the housing 3210. The entrance can be kept open. A door (not shown) may be provided to selectively open and close the entrance. A cooling unit 3220, a heating unit 3230, and a conveying plate 3240 are provided in the housing 3210. The cooling unit 3220 and the heating unit 3230 are provided side by side along the second direction 14. According to an example, the cooling unit 3220 may be located closer to the transfer chamber 3400 than the heating unit 3230.

The cooling unit 3220 has a cooling plate 3222. The cooling plate 3222 may have a generally circular shape when viewed from the top. A cooling member 3224 is provided on the cooling plate 3222. According to an example, the cooling member 3224 is formed inside the cooling plate 3222 and may be provided as a flow path through which the cooling fluid flows.

The heating unit 3230 has a heating plate 3232, a cover 3234, and a heater 3233. The heating plate 3232 has a generally circular shape when viewed from the top. The heating plate 3232 has a larger diameter than the substrate W. A heater 3233 is installed on the heating plate 3232. The heater 3233 may be provided as a heating resistor to which current is applied. The heating plate 3232 is provided with lift pins 3238 that can be driven in the vertical direction along the third direction 16. The lift pin 3238 receives the substrate W from the conveying means outside the heating unit 3230 and puts it down on the heating plate 3232 or lifts the substrate W from the heating plate 3232 to the outside of the heating unit 3230. Hand over by means of transport. According to an example, three lift pins 3238 may be provided. The cover 3234 has a space with an open lower portion therein. 7 The cover 3234 is located above the heating plate 3232 and is moved in the vertical direction by the actuator 3236. When the cover 3234 comes into contact with the heating plate 3232, the space surrounded by the cover 3234 and the heating plate 3232 is provided as a heating space for heating the substrate W.

The transfer plate 3240 has a generally disk shape and has a diameter corresponding to the substrate W. A notch 3244 is formed at the edge of the transfer plate 3240. The notch 3244 may have a shape corresponding to the protrusion 3429 formed on the hand 3420 of the transfer robot 3422 and 3424 described above. In addition, the notch 3244 is provided in a number corresponding to the protrusion 3429 formed in the hand 3420 and is formed at a position corresponding to the protrusion 3429. When the vertical position of the hand 3420 and the transfer plate 3240 is changed in the position where the hand 3420 and the transfer plate 3240 are aligned in the vertical direction, the substrate W between the hand 3420 and the transfer plate 3240 is changed. Delivery takes place. The transfer plate 3240 is mounted on the guide rail 3249 and may be moved between the first area 3212 and the second area 3214 along the guide rail 3249 by a driver 3246. The conveying plate 3240 is provided with a plurality of slit-shaped guide grooves 3242. The guide groove 3242 extends from the end of the transfer plate 3240 to the inside of the transfer plate 3240. The guide groove 3242 is provided along the second direction 14 in its longitudinal direction, and the guide grooves 3242 are positioned to be spaced apart from each other along the first direction 12. The guide groove 3242 prevents the transfer plate 3240 and the lift pin 1340 from interfering with each other when the transfer of the substrate W is made between the transfer plate 3240 and the heating unit 3230.

The substrate W is heated while the substrate W is directly placed on the support plate 1320, and the substrate W is cooled by the transfer plate 3240 on which the substrate W is placed. It is made while in contact with. The transfer plate 3240 is made of a material having a high heat transfer rate so that heat transfer between the cooling plate 3222 and the substrate W is well performed. According to an example, the transfer plate 3240 may be made of a metal material.

The heating unit 3230 provided in some of the heat treatment chambers 3200 may supply gas while heating the substrate W to improve the adhesion rate of the photoresist to the substrate W. According to an example, the gas may be hexamethyldisilane gas.

The liquid processing chamber 3600 is provided in plural. Some of the liquid treatment chambers 3600 may be provided to be stacked on each other. 3 and 4, the liquid processing chambers 3600 are disposed on one side of the transfer chamber 3402. The liquid processing chambers 3600 are arranged side by side along the first direction 12. Some of the liquid processing chambers 3600 are provided at positions adjacent to the index module 20. Hereinafter, these liquid treatment chambers are referred to as a front liquid treatment chamber 3602 (front liquid treating chamber). Other portions of the liquid processing chambers 3600 are provided at positions adjacent to the interface module 40. Hereinafter, these liquid treatment chambers are referred to as rear heat treating chambers 3604.

The front-end liquid treatment chamber 3602 applies the first liquid onto the substrate W, and the rear-end liquid treatment chamber 3604 applies the second liquid onto the substrate W. The first liquid and the second liquid may be different types of liquids. According to an embodiment, the first liquid is an antireflection film, and the second liquid is a photoresist. The photoresist may be applied on the substrate W on which the antireflection film is applied. Optionally, the first liquid may be a photoresist, and the second liquid may be an antireflection film. In this case, the antireflection film may be applied on the substrate W on which the photoresist is applied. Optionally, the first liquid and the second liquid are of the same type, and they may all be photoresists.

Both the liquid processing chambers 3602 and 3604 have the same structure, and the front end liquid processing chamber 3602 will be described as an example. 8 is a cross-sectional view illustrating an example of the liquid processing chamber of FIG. 3, and FIG. 9 is a plan view illustrating the liquid processing chamber of FIG. 8. Referring to FIGS. 8 and 9, the front end liquid processing chamber 3602 is provided as an apparatus 800 for forming a liquid film on a substrate. The front end liquid treatment chambers 3602 and 800 include a housing 810, an airflow providing unit 820, a substrate support unit 830, a processing container 850, an elevating unit 890, and a liquid supply unit 840. do.

The housing 810 is provided in a rectangular cylindrical shape having a space 812 therein. An opening (not shown) is formed at one side of the housing 810. The opening functions as an inlet through which the substrate W is carried. A door is installed in the opening, and the door opens and closes the opening. When the substrate processing process proceeds, the door closes the opening to seal the inner space 812 of the housing 810. An inner exhaust port 814 and an outer exhaust port 816 are formed on the lower surface of the housing 810. The airflow formed in the housing 810 is exhausted to the outside through the inner exhaust port 814 and the outer exhaust port 816. According to an example, the airflow provided in the processing container 850 may be exhausted through the inner exhaust port 814, and the airflow provided outside the processing container 850 may be exhausted through the outer exhaust port 816.

The airflow providing unit 820 forms a downward airflow in the inner space of the housing 810. The airflow providing unit 820 includes an airflow supply line 822, a fan 824, and a filter 826. The airflow supply line 822 is connected to the housing 810. The airflow supply line 822 supplies external air to the housing 810. The filter 826 filters 826 the air provided from the airflow supply line 822. The filter 826 removes impurities contained in air. The fan 824 is installed on the upper surface of the housing 810. The fan 824 is located in a central area on the top surface of the housing 810. The fan 824 forms a downward airflow in the interior space of the housing 810. When air is supplied to the fan 824 from the airflow supply line 822, the fan 824 supplies air in a downward direction.

The substrate support unit 830 supports the substrate W in the inner space of the housing 810. The substrate support unit 830 rotates the substrate W. The substrate support unit 830 includes a spin chuck 832, a rotation shaft 834, and a driver 836. The spin chuck 832 is provided as a substrate support member 832 supporting a substrate. The spin chuck 832 is provided to have a circular plate shape. The substrate W is in contact with the upper surface of the spin chuck 832. The spin chuck 832 is provided to have a diameter smaller than that of the substrate W. According to an example, the spin chuck 832 may chuck the substrate W by vacuum suctioning the substrate W. Optionally, the spin chuck 832 may be provided as an electrostatic chuck for chucking the substrate W using static electricity. Also, the spin chuck 832 may chuck the substrate W with a physical force.

The rotation shaft 834 and the driver 836 are provided as rotation drive members 834 and 836 that rotate the spin chuck 832. The rotation shaft 834 supports the spin chuck 832 under the spin chuck 832. The rotation shaft 834 is provided so that its longitudinal direction faces up and down. The rotation shaft 834 is provided so as to be rotatable about its central axis. The driver 836 provides a driving force so that the rotation shaft 834 is rotated. For example, the driver 836 may be a motor capable of varying the rotational speed of the rotation shaft 834.

The processing vessel 850 is located in the inner space 812 of the housing 810. The processing container 850 provides a processing space therein. The processing container 850 is provided to have a cup shape with an open top. The processing vessel 850 includes an inner cup 852 and an outer cup 862.

The inner cup 852 is provided in a circular plate shape surrounding the rotation shaft 834. When viewed from the top, the inner cup 852 is positioned to overlap the inner exhaust port 814. When viewed from above, the upper surface of the inner cup 852 is provided so that each of the outer and inner regions are inclined at different angles. According to an example, the outer region of the inner cup 852 faces a downwardly inclined direction as the distance from the substrate support unit 830 increases, and the inner region faces an upwardly inclined direction as the distance from the substrate support unit 830. Is provided to A point where the outer region and the inner region of the inner cup 852 meet each other is provided to correspond to the side end of the substrate W in the vertical direction. An area outside the upper surface of the inner cup 852 is provided to be rounded. An area outside the upper surface of the inner cup 852 is provided concave down. An area outside the upper surface of the inner cup 852 may be provided as an area through which the treatment liquid flows.

The outer cup 862 is provided to have a cup shape surrounding the substrate support unit 830 and the inner cup 852. The outer cup 862 has a bottom wall 864, a side wall 866, an upper wall 870, and an inclined wall 870. The bottom wall 864 is provided to have a circular plate shape having a hollow. A recovery line 865 is formed on the bottom wall 864. The recovery line 865 recovers the processing liquid supplied on the substrate W. The treated liquid recovered by the recovery line 865 may be reused by an external liquid recovery system. The sidewall 866 is provided to have a circular cylindrical shape surrounding the substrate support unit 830. The side wall 866 extends in a vertical direction from the side end of the bottom wall 864. Side wall 866 extends upward from bottom wall 864.

The inclined wall 870 extends from the upper end of the side wall 866 in the inner direction of the outer cup 862. The inclined wall 870 is provided to be closer to the substrate support unit 830 as it goes upward. The inclined wall 870 is provided to have a ring shape. The upper end of the inclined wall 870 is positioned higher than the substrate W supported by the substrate support unit 830.

The lifting unit 890 lifts and moves the inner cup 852 and the outer cup 862, respectively. The lifting unit 890 includes an inner moving member 892 and an outer moving member 894. The inner moving member 892 moves the inner cup 852 up and down, and the outer moving member 894 moves the outer cup 862 up and down.

The liquid supply unit 840 supplies a processing liquid, a pre-wet liquid, a removal liquid, and a cleaning liquid onto the substrate W. The liquid supply unit 840 includes a free wet nozzle 842, a photoresist nozzle 844, and an integrated nozzle 1000.

The free wet nozzle 842 and the photoresist nozzle 844 are supported together by an arm 848 and moved together. The guide member 846 includes a guide rail 846 that moves the arm 848 in the horizontal direction. The guide rail 846 is located on one side of the processing container 850. The guide rail 846 is provided so that its longitudinal direction faces the horizontal direction. According to an example, the length direction of the guide rail 846 may be provided to face a direction parallel to the first direction 12. An arm 848 is installed on the guide rail 846. The arm 848 may be moved by a linear motor provided inside the guide rail 846. The arm 848 is provided to face in a longitudinal direction perpendicular to the guide rail 846 when viewed from above. One end of the arm 848 is mounted on the guide rail 846. A free wet nozzle 842 and a photoresist nozzle 844 are installed on the bottom of the other end of the arm 848, respectively. When viewed from above, the free wet nozzle 842 and the photoresist nozzle 844 are arranged in a direction parallel to the longitudinal direction of the guide rail 846.

The pre-wet nozzle 842 supplies the pre-wet liquid onto the substrate W, and the photoresist nozzle 844 supplies the processing liquid onto the substrate W. For example, the pre-wet liquid may be a liquid capable of changing properties similar to or identical to the treatment liquid on the surface of the substrate. The pre-wet liquid can change the surface of the substrate to hydrophobic properties. The treatment liquid may be a photoresist such as a photoresist. The pre-wet nozzle 842 receives the pre-wet liquid from the pre-wet liquid supply line. A first valve is installed in the pre-wet liquid supply line, and the first valve opens and closes the pre-wet liquid supply line. The photoresist nozzle 844 is provided in plural. The photoresist nozzle 844 is positioned to be arranged in a line on both sides with the free wet nozzle 842 interposed therebetween. Each of the photoresist nozzles 844 may discharge different types of treatment liquids. Each of the treatment nozzles 844 receives treatment liquid from treatment liquid supply lines independent from each other.

Each of the pre-wet nozzle 842 and the photosensitive liquid nozzle 844 supplies a pre-wet liquid and a processing liquid to a central position of the substrate. Each of the free wet nozzle 842 and the photoresist nozzle 844 is provided so that its discharge port faces vertically downward. Here, the central position is a position where the liquid supply position corresponds to the center of the substrate W. Optionally, the discharge port of the pre-wet nozzle 842 may be provided to face a downwardly inclined direction.

The integrated nozzle 1000 removes the liquid film of the photoresist formed by the photoresist on the substrate W. The integrated nozzle 1000 removes the liquid film formed on the edge region of the substrate W. The integrated nozzle 1000 supplies a removal liquid and a cleaning liquid to the substrate W. The removal liquid removes the liquid film of the photosensitive liquid, and the cleaning liquid cleans the substrate W. The removal liquid is supplied to the upper surface of the substrate W, and the cleaning liquid is supplied to the lower surface of the substrate W.

10 is a perspective view showing the integrated nozzle of FIG. 8. 9 and 10, the integrated nozzle 1000 includes a body 1200, a pressure reducing member 1400, and a actuator 1600. The body 1200 has a base 1220, an upper body 1240, and a lower body 1260. The base 1220 is provided in an arc shape surrounding the circumference of the substrate W. The base 1220 is provided at a position facing the side portion of the substrate W, and one surface facing the base 1220 is provided with the same distance from the substrate W. One surface of the base 1220 may be provided parallel to the circumferential direction of the substrate W. The base 1220 has an outlet 1222 formed on one surface facing the substrate W. The outlet 1222 may be provided in a slit shape elongated along the length direction of one surface. A discharge line 1224 connected to the discharge port 1222 is formed inside the base 1220, and a pressure reducing member 1400 is connected to the discharge line 1224. Accordingly, the decompression member 1400 decompresses the outlet 1222, and when the base 1220 faces the substrate W, a decompression atmosphere is generated at the periphery of the substrate W, and the substrate W through the outlet 1222 ) Peripheral by-products may be discharged under reduced pressure.

The upper body 1240 is provided to extend upward from the base 1220. The upper body 1240 is provided to extend in an upward inclined direction from the base 1220. The upper body 1240 faces in a direction inclined upward as it moves away from the base 1220. The upper body 1240 is positioned higher than the substrate W. Accordingly, the peripheral portion of the substrate W is wrapped by the combination of the upper body 1240 and the base 1220. According to an example, in a position where the base 1220 faces the substrate W, the upper body 1240 may be provided to face an upward inclined direction as it approaches the central axis of the substrate W. The upper body 1240 is hinged to the base 1220. Accordingly, the inclination angle of the upper body 1240 with respect to the base 1220 is adjusted. For example, the inclination angle of the upper body 1240 may be adjusted from a position where the base 1220 and the substrate W face each other, in a tangential direction of the radial direction of the substrate W as a central axis. An upper discharge port 1244 is formed in the upper body 1240. The upper discharge line 1242 is connected to the upper discharge port 1244, and the removal liquid is supplied to the upper discharge line 1242. The upper discharge port 1244 discharges the removal liquid in a downwardly inclined direction. The upper discharge port 1244 is provided so as to be inclined downward as it approaches the central axis of the substrate W at a position where the base 1220 and the substrate W face each other. By adjusting the inclination angle of the upper body 1240, the discharge point of the removal liquid may be provided differently.

The lower body 1260 is provided to extend downward from the base 1220. The lower body 1260 is provided to extend in a downwardly inclined direction from the base 1220. The lower body 1260 faces in a downwardly inclined direction as it moves away from the base 1220. The lower body 1260 is positioned lower than the substrate W. Therefore, the peripheral portion of the substrate W is wrapped by a combination of the upper body 1240, the lower body 1260, and the base 1220. According to an example, in a position where the base 1220 faces the substrate W, the lower body 1260 may be provided to face a downwardly inclined direction as it approaches the central axis of the substrate W. The lower body 1260 is hinged to the base 1220. Accordingly, the inclination angle of the lower body 1260 with respect to the base 1220 is adjusted. For example, the inclination angle of the lower body 1260 may be adjusted from a position where the base 1220 and the substrate W face each other in a tangent direction of the radial direction of the substrate W to the central axis. A lower discharge port 1264 is formed in the lower body 1260. A lower discharge line 1262 is connected to the hibu discharge port, and a cleaning liquid is supplied to the lower discharge line 1262. The lower discharge port 1264 discharges the cleaning liquid in a downwardly inclined direction. The lower discharge port 1264 is provided so as to be inclined upward as the base 1220 and the substrate W face each other and are closer to the central axis of the substrate W. By adjusting the inclination angle of the lower body 1260, a discharging point of the cleaning liquid may be provided differently. According to an example, when viewed from the top, the impact point of the removal liquid may be provided closer to the center of the substrate W than the impact point of the cleaning liquid. The discharge angle of the removal liquid to the substrate W may be provided larger than the discharge angle of the cleaning liquid. That is, the discharge angle β of the cleaning liquid may have a gentle slope than the discharge angle α of the removal liquid. As a result, the cleaning liquid can contact a larger area than the removal liquid, and the cleaning area of the substrate W can be widened.

According to an example, the discharge angles (α, β) of each of the upper body 1240 and the lower body 1260 are adjusted by the operator. However, the discharge angles α and β may be adjusted by a driving member such as a motor. In addition, the removal liquid and the cleaning liquid may be a liquid containing thinner. The removal liquid may be provided with a higher concentration of thinner than the cleaning liquid. For this reason, the removal liquid is provided as a liquid with higher removal efficiency than the cleaning liquid.

The actuator 1600 moves the body 1200 to the removal position and the standby position. Here, the removal position is a position where the edge region of the substrate W is wrapped by the upper body 1240, the lower body 1260, and the body 1200, and the standby position is a position outside the removal position. When viewed from above, the body 1200 may be located inside the processing container 850 at the removal position, and may be located outside the processing container 850 at the standby position. The moving direction between the removal position and the standby position may be parallel to the radial direction of the substrate W. The body 1200 is moved to a standby position when the substrate W is placed in the processing vessel 850, and the substrate W is positioned higher than the upper end of the processing vessel 850 and is out of the processing vessel 850. When it can be moved to the removal position. According to an example, at the removal position, the removal liquid is supplied, the cleaning liquid is supplied, and the pressure is reduced through the outlet.

Next, a method of forming and removing a liquid film on the substrate W (W) using the above-described substrate (W) processing apparatus will be described. 11 to 16 are views illustrating a process of processing the substrate of FIG. 8. The method of processing the substrates W and W includes a liquid film forming step and a liquid film removing step. In the liquid film forming step, a photoresist liquid film is formed on the entire upper surface of the substrate W, and in the liquid film removing step, an edge region that is a part of the liquid film is removed. The liquid film forming step is performed within the processing container 850, while the liquid film removing step is performed at a position away from the processing container 850.

In the liquid film formation step, a pre-wet liquid is supplied on the rotating substrate W to improve the affinity between the surface of the substrate W and the processing liquid, and then, as shown in FIG. 11, a photosensitive liquid is applied to the liquid film of the photosensitive liquid. To form. The pre-wet liquid and the photoresist are respectively supplied to the center of the substrate W, which is diffused to the entire area by the rotation of the substrate W. When the liquid film formation step is completed, as shown in FIG. 12, the processing container 850 is moved downward, and the substrate W is provided at a position outside the processing container 850.

13 to 16 are views illustrating a process of removing a liquid film from a substrate. 13 to 16, in the liquid film removal step, an edge region of the liquid film is removed. In the liquid film removal step, the rotation of the substrate W is continuously maintained. The integrated nozzle 1000 is moved from the standby position to the removal position while the removal liquid is discharged. The edge region of the substrate W is inserted into the combined space by the upper body 1240, the lower body 1260, and the base 1220. The removal liquid is discharged before the substrate W is inserted. When discharging of the removal liquid is started while the substrate W is inserted into the integrated nozzle 1000, the removal liquid may be supplied to an unwanted area at the initial stage of discharge, and problems such as hunting may occur. When the substrate W is inserted into the integrated nozzle 1000, a cleaning liquid is supplied. If the removal liquid and the cleaning liquid are supplied together before the substrate W is inserted into the integrated nozzle 1000, these liquids may be supplied to an undesired area due to scattering of the removal liquid and the cleaning liquid. Here, the undesired region includes a liquid film formed in the central region of the substrate W.

The removal liquid is discharged in a downwardly inclined direction as the distance from the base 1220 increases, and the cleaning liquid is discharged in an upwardly inclined direction as the distance from the base 1220. The removal liquid and the cleaning liquid are supplied to the substrate W and diffuse in the radial direction by centrifugal force. The impact point of the cleaning liquid is located closer to the central axis of the substrate W than the impact point of the removal liquid. This is to increase the contact area between the cleaning liquid and the bottom surface of the substrate W. This impact point may be achieved by adjusting the inclination angle of the lower body 1260 or the upper body 1240. In this case, the discharge angle β of the cleaning liquid to the substrate W may have a gentler angle than the discharge angle α of the removal liquid. The removal liquid and the cleaning liquid move outward along the surface of the substrate W. In the area of the substrate W enclosed by the integrated nozzle 1000, a reduced pressure atmosphere is formed, and the removal liquid and the cleaning liquid are recovered in the direction toward the discharge port 1222, and reverse contamination of the substrate W due to scattering of these liquids And it is possible to prevent contamination of the peripheral device.

When the liquid film removal step is completed, the supply of the cleaning liquid is stopped, and the removal liquid is moved to the standby position while maintaining the supply. When the edge region of the substrate W leaves the integrated nozzle 1000, the supply of the removal liquid is stopped, and the liquid film removal step is terminated.

Unlike the above-described embodiment, the integrated nozzle 1000 may have an elongated shape such that the upper body 1240 and the lower body 1260 are each rounded together with one surface of the base 1220 as shown in FIG. 17. Accordingly, the reduced pressure atmosphere may be further strengthened in the space surrounding the edge region of the substrate W.

Referring back to FIGS. 3 and 4, a plurality of buffer chambers 3800 are provided. Some of the buffer chambers 3800 are disposed between the index module 20 and the transfer chamber 3400. Hereinafter, these buffer chambers are referred to as a front buffer 3802 (front buffer). The shear buffers 3802 are provided in plural, and are positioned to be stacked with each other along the vertical direction. Other portions of the buffer chambers 3802 and 3804 are disposed between the transfer chamber 3400 and the interface module 40 below. These buffer chambers are referred to as a rear buffer 3804. The rear buffers 3804 are provided in plural, and are positioned to be stacked with each other along the vertical direction. Each of the front buffers 3802 and the rear buffers 3804 temporarily stores a plurality of substrates W. The substrate W stored in the shear buffer 3802 is carried in or taken out by the index robot 2200 and the transfer robot 3422. The substrate W stored in the rear buffer 3804 is carried in or taken out by the transfer robot 3422 and the first robot 4602.

The developing block 30b has a heat treatment chamber 3200, a transfer chamber 3400, and a liquid treatment chamber 3600. The heat treatment chamber 3200, the transfer chamber 3400, and the liquid treatment chamber 3600 of the developing block 30b are the heat treatment chamber 3200, the transfer chamber 3400, and the liquid treatment chamber 3600 of the coating block 30a. ) And is provided in a generally similar structure and arrangement, so it is for this. However, in the developing block 30b, all of the liquid processing chambers 3600 are provided as a developing chamber 3600 for developing and processing a substrate by supplying a developer in the same manner.

The interface module 40 connects the processing module 30 to an external exposure apparatus 50. The interface module 40 has an interface frame 4100, an additional process chamber 4200, an interface buffer 4400, and a conveying member 4600.

A fan filter unit may be provided at an upper end of the interface frame 4100 to form a downward airflow therein. The additional process chamber 4200, the interface buffer 4400, and the transfer member 4600 are disposed inside the interface frame 4100. The additional process chamber 4200 may perform a predetermined additional process before the substrate W, which has been processed in the coating block 30a, is carried into the exposure apparatus 50. Optionally, the additional process chamber 4200 may perform a predetermined additional process before the substrate W, which has been processed by the exposure apparatus 50, is carried into the developing block 30b. According to an example, the additional process is an edge exposure process of exposing the edge region of the substrate W, a top surface cleaning process of cleaning the upper surface of the substrate W, or a bottom surface cleaning process of cleaning the lower surface of the substrate W. I can. A plurality of additional process chambers 4200 may be provided, and they may be provided to be stacked on each other. All of the additional process chambers 4200 may be provided to perform the same process. Optionally, some of the additional process chambers 4200 may be provided to perform different processes.

The interface buffer 4400 provides a space in which the substrate W transferred between the coating block 30a, the additional process chamber 4200, the exposure apparatus 50, and the developing block 30b temporarily stays during the transfer process. A plurality of interface buffers 4400 may be provided, and a plurality of interface buffers 4400 may be provided to be stacked on each other.

According to an example, an additional process chamber 4200 may be disposed on one side and an interface buffer 4400 may be disposed on the other side based on an extension line in the longitudinal direction of the transfer chamber 3400.

The conveying member 4600 conveys the substrate W between the coating block 30a, the addition process chamber 4200, the exposure apparatus 50, and the developing block 30b. The transfer member 4600 may be provided as one or a plurality of robots. According to an example, the carrying member 4600 has a first robot 4602 and a second robot 4606. The first robot 4602 transfers the substrate W between the coating block 30a, the additional process chamber 4200, and the interface buffer 4400, and the interface robot 4606 includes the interface buffer 4400 and the exposure apparatus ( 50), and the second robot 4604 may be provided to transport the substrate W between the interface buffer 4400 and the developing block 30b.

Each of the first robot 4602 and the second robot 4606 includes a hand on which the substrate W is placed, and the hand moves forward and backward, rotates about an axis parallel to the third direction 16, and It may be provided to be movable along the three directions 16.

The hand of the index robot 2200, the first robot 4602, and the second robot 4606 may all be provided in the same shape as the hand 3420 of the transfer robots 3422 and 3424. Optionally, the hand of the robot that directly exchanges the substrate (W) with the transfer plate 3240 of the heat treatment chamber is provided in the same shape as the hand 3420 of the transfer robots 3422 and 3424, and the hands of the other robots have a different shape. Can be provided.

According to an embodiment, the index robot 2200 is provided to directly exchange the substrate W with the heating unit 3230 of the shear heat treatment chamber 3200 provided in the coating block 30a.

In addition, the transfer robot 3422 provided in the coating block 30a and the developing block 30b may be provided to directly exchange the substrate W with the transfer plate 3240 positioned in the heat treatment chamber 3200.

Next, an embodiment of a method of processing a substrate using the substrate processing apparatus 1 described above will be described.

A coating process (S20), an edge exposure process (S40), an exposure process (S60), and a developing process (S80) are sequentially performed on the substrate W.

The coating treatment process (S20) is a heat treatment process (S21) in the heat treatment chamber 3200, an antireflective coating process (S22) in the front liquid treatment chamber 3602, a heat treatment process (S23) in the heat treatment chamber 3200, and a liquid treatment at the subsequent stage. A photoresist film application process (S24) in the chamber 3604 and a heat treatment process (S25) in the heat treatment chamber 3200 are sequentially performed.

Hereinafter, an example of a conveyance path of the substrate W from the container 10 to the exposure apparatus 50 will be described.

The index robot 2200 takes out the substrate W from the container 10 and transfers the substrate W to the front end buffer 3802. The transfer robot 3422 transfers the substrate W stored in the front end buffer 3802 to the front end heat treatment chamber 3200. The substrate W transfers the substrate W to the heating unit 3230 by the transfer plate 3240. When the heating process of the substrate in the heating unit 3230 is completed, the transfer plate 3240 transfers the substrate to the cooling unit 3220. The transfer plate 3240 is in contact with the cooling unit 3220 while supporting the substrate W to perform a cooling process of the substrate W. When the cooling process is completed, the transfer plate 3240 is moved to the upper portion of the cooling unit 3220, and the transfer robot 3422 carries out the substrate W from the heat treatment chamber 3200 to the front end liquid treatment chamber 3602. Return.

An anti-reflection film is applied on the substrate W in the shear liquid processing chamber 3602.

The transfer robot 3422 carries the substrate W from the front end liquid processing chamber 3602 and carries the substrate W into the heat treatment chamber 3200. The above-described heating process and cooling process are sequentially performed in the heat treatment chamber 3200, and when each heat treatment process is completed, the transfer robot 3422 carries out the substrate W and transfers the substrate W to the subsequent liquid treatment chamber 3604.

Thereafter, a photoresist film is applied on the substrate W in a liquid processing chamber 3604 at a later stage.

The transfer robot 3422 carries the substrate W out of the liquid processing chamber 3604 at the rear stage, and carries the substrate W into the heat treatment chamber 3200. The above-described heating process and cooling process are sequentially performed in the heat treatment chamber 3200, and when each heat treatment process is completed, the transfer robot 3422 transfers the substrate W to the rear buffer 3804. The first robot 4602 of the interface module 40 carries out the substrate W from the rear buffer 3804 and transfers the substrate W to the auxiliary process chamber 4200.

An edge exposure process is performed on the substrate W in the auxiliary process chamber 4200.

Thereafter, the first robot 4602 carries out the substrate W from the auxiliary process chamber 4200 and transfers the substrate W to the interface buffer 4400.

Thereafter, the second robot 4606 takes out the substrate W from the interface buffer 4400 and transfers it to the exposure apparatus 50.

The development treatment process (S80) is performed by sequentially performing a heat treatment process (S81) in the heat treatment chamber 3200, a development process (S82) in the liquid treatment chamber 3600, and a heat treatment process (S83) in the heat treatment chamber 3200 do.

Hereinafter, an example of a conveyance path of the substrate W from the exposure apparatus 50 to the container 10 will be described.

The second robot 4606 unloads the substrate W from the exposure apparatus 50 and transfers the substrate W to the interface buffer 4400.

Thereafter, the first robot 4602 removes the substrate W from the interface buffer 4400 and transfers the substrate W to the rear buffer 3804. The transfer robot 3422 carries out the substrate W from the rear buffer 3804 and transfers the substrate W to the heat treatment chamber 3200. In the heat treatment chamber 3200, a heating process and a cooling process of the substrate W are sequentially performed. When the cooling process is completed, the substrate W is transferred to the developing chamber 3600 by the transfer robot 3422.

A developing process is performed by supplying a developer onto the substrate W to the developing chamber 3600.

The substrate W is carried out from the developing chamber 3600 by the transfer robot 3422 and carried into the heat treatment chamber 3200. A heating process and a cooling process are sequentially performed on the substrate W in the heat treatment chamber 3200. When the cooling process is completed, the substrate W is carried out from the heat treatment chamber 3200 by the transfer robot 3422 and transferred to the front end buffer 3802.

Thereafter, the index robot 2200 takes out the substrate W from the shear buffer 3802 and transfers it to the container 10.

The processing block of the above-described substrate processing apparatus 1 has been described as performing a coating treatment process and a development treatment process. However, unlike this, the substrate processing apparatus 1 may include only the index module 20 and the processing block 37 without an interface module. In this case, the processing block 37 performs only a coating process, and a film applied on the substrate W may be a spin-on hard mask film SOH.

The detailed description above is illustrative of the present invention. In addition, the above description shows and describes preferred embodiments of the present invention, and the present invention can be used in various other combinations, modifications, and environments. That is, changes or modifications may be made within the scope of the concept of the invention disclosed in the present specification, the scope equivalent to the disclosed contents, and/or the skill or knowledge of the art. The above-described embodiments describe the best state for implementing the technical idea of the present invention, and various changes required in the specific application fields and uses of the present invention are possible. Therefore, the detailed description of the invention is not intended to limit the invention to the disclosed embodiment. In addition, the appended claims should be construed as including other embodiments.

1000: integrated nozzle 1200: body
1220: base 1240: upper body
1242: upper discharge line 1260: lower body
1262: lower discharge line 1400: pressure reducing member
1600: actuator

Claims (15)

In the apparatus for liquid processing a substrate,
A substrate support unit for supporting and rotating the substrate;
Including a liquid supply unit for supplying a liquid onto the substrate supported by the substrate support unit,
The liquid supply unit,
A photosensitive liquid nozzle for supplying a photosensitive liquid so that a liquid film of the photosensitive liquid is formed on the substrate;
Including an integrated nozzle processing the upper surface edge region of the substrate and the bottom surface of the substrate,
The integrated nozzle
A body having a base, an upper body coupled to the base, and a lower body disposed below the upper body and coupled to the base;
An upper discharge line provided on the upper body and supplying a removal liquid for removing the photosensitive liquid to an edge region of an upper surface of the substrate;
A lower discharge line provided on the lower body and supplying a cleaning liquid to the bottom of the substrate;
It is provided on the base, and includes a discharge line for discharging the removal liquid and by-products removed by the removal liquid,
When the substrate is inserted into the upper body and the lower body, the upper discharge line and the lower discharge line are spaced farther from the center of the substrate than the point on the substrate from which the removal liquid is discharged. Provided as possible,
The removal liquid and the cleaning liquid contain thinner, and a concentration of thinner in the removal liquid is different from a concentration of thinner in the cleaning liquid. delete The method of claim 1,
A substrate processing apparatus in which each of the upper body and the lower body is angle-adjustably coupled to the base so that the discharge angles of the photoresist and the cleaning liquid can be changed with respect to the substrate. The method of claim 3,
Each of the upper body and the lower body is hinged to the base. The method of claim 1,
A substrate processing apparatus to which a pressure reducing member is connected to the discharge line. delete The method of claim 1,
The edge region of the substrate placed on the substrate support unit is provided to be inserted between the upper body and the lower body,
The upper body is provided to be inclined upwardly as it moves away from the base,
The substrate processing apparatus is provided to be inclined downward as the lower body is further away from the base. The method of claim 7,
When the edge region of the substrate is inserted between the upper body and the lower body, the base is provided at a height opposite to the substrate,
One surface of the base facing the substrate is provided to be rounded so that the distance to the substrate is the same along the circumferential direction of the substrate,
The substrate processing apparatus is provided with an outlet of the discharge line in a slit shape on the one surface. delete delete The method of claim 1,
The upper discharge line and the lower discharge line are provided such that a discharge angle of the removal liquid and a discharge angle of the cleaning liquid are different from each other with respect to the substrate. The method of claim 11,
A substrate processing apparatus in which a discharge angle of the upper discharge line with respect to the substrate is greater than that of the lower discharge line. delete In the method of processing a substrate,
Applying a photoresist on the substrate to form a liquid film of the photoresist on the substrate,
After forming the liquid film of the photoresist, the integrated nozzle of any one of claims 1, 3, 4, 5, 7, and 8 is applied to the edge of the upper surface of the substrate. A substrate processing method for supplying a removal liquid for removing the photosensitive liquid and a cleaning liquid for cleaning a bottom surface of the substrate. The method of claim 14,
The substrate processing method in which the removal liquid and the cleaning liquid are simultaneously discharged.

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