KR102171712B1 - 방사 조도 경화 렌즈를 갖는 프로세싱 챔버 - Google Patents

방사 조도 경화 렌즈를 갖는 프로세싱 챔버 Download PDF

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KR102171712B1
KR102171712B1 KR1020187036359A KR20187036359A KR102171712B1 KR 102171712 B1 KR102171712 B1 KR 102171712B1 KR 1020187036359 A KR1020187036359 A KR 1020187036359A KR 20187036359 A KR20187036359 A KR 20187036359A KR 102171712 B1 KR102171712 B1 KR 102171712B1
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South Korea
Prior art keywords
substrate
lens
processing chamber
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Korean (ko)
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KR20180136577A (ko
Inventor
올랜도 트레조
람프라카쉬 산카라크리쉬난
타-징 궁
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어플라이드 머티어리얼스, 인코포레이티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H01L21/02348—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to UV light
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0047—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/02—Simple or compound lenses with non-spherical faces
    • G02B3/08—Simple or compound lenses with non-spherical faces with discontinuous faces, e.g. Fresnel lens
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0095—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with ultraviolet radiation

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Surface Treatment Of Optical Elements (AREA)
KR1020187036359A 2016-05-26 2017-05-26 방사 조도 경화 렌즈를 갖는 프로세싱 챔버 Active KR102171712B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/165,930 2016-05-26
US15/165,930 US10541159B2 (en) 2016-05-26 2016-05-26 Processing chamber with irradiance curing lens
PCT/US2017/034622 WO2017205714A1 (en) 2016-05-26 2017-05-26 Processing chamber with irradiance curing lens

Publications (2)

Publication Number Publication Date
KR20180136577A KR20180136577A (ko) 2018-12-24
KR102171712B1 true KR102171712B1 (ko) 2020-10-29

Family

ID=60411566

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Application Number Title Priority Date Filing Date
KR1020187036359A Active KR102171712B1 (ko) 2016-05-26 2017-05-26 방사 조도 경화 렌즈를 갖는 프로세싱 챔버

Country Status (5)

Country Link
US (1) US10541159B2 (enExample)
JP (1) JP6902053B2 (enExample)
KR (1) KR102171712B1 (enExample)
CN (1) CN109155234B (enExample)
WO (1) WO2017205714A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022232118A1 (en) * 2021-04-29 2022-11-03 Applied Materials, Inc. Windows for rapid thermal processing chambers

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010287759A (ja) 2009-06-12 2010-12-24 Ushio Inc 光照射装置
KR101483823B1 (ko) * 2012-06-01 2015-01-16 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 반도체용 자외선 경화 시스템

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4755654A (en) * 1987-03-26 1988-07-05 Crowley John L Semiconductor wafer heating chamber
JPH03277774A (ja) * 1990-03-27 1991-12-09 Semiconductor Energy Lab Co Ltd 光気相反応装置
JP3115822B2 (ja) * 1996-06-04 2000-12-11 松下電子工業株式会社 紫外線照射装置およびその照射方法
US6809012B2 (en) * 2001-01-18 2004-10-26 Semiconductor Energy Laboratory Co., Ltd. Method of making a thin film transistor using laser annealing
US6547422B2 (en) * 2001-08-08 2003-04-15 Prokia Technology Co., Ltd. Illuminating module for a display apparatus
US6879777B2 (en) 2002-10-03 2005-04-12 Asm America, Inc. Localized heating of substrates using optics
US6862404B1 (en) * 2003-09-08 2005-03-01 Wafermasters Focused photon energy heating chamber
US8137465B1 (en) * 2005-04-26 2012-03-20 Novellus Systems, Inc. Single-chamber sequential curing of semiconductor wafers
US8980769B1 (en) * 2005-04-26 2015-03-17 Novellus Systems, Inc. Multi-station sequential curing of dielectric films
JP2007229682A (ja) 2006-03-03 2007-09-13 Harison Toshiba Lighting Corp 紫外線照射装置
SG136078A1 (en) * 2006-03-17 2007-10-29 Applied Materials Inc Uv cure system
JP2007317991A (ja) * 2006-05-29 2007-12-06 Advanced Lcd Technologies Development Center Co Ltd 半導体装置の製造方法並びに薄膜トランジスタ
US7851232B2 (en) * 2006-10-30 2010-12-14 Novellus Systems, Inc. UV treatment for carbon-containing low-k dielectric repair in semiconductor processing
US8309421B2 (en) * 2010-11-24 2012-11-13 Applied Materials, Inc. Dual-bulb lamphead control methodology
CN103974790B (zh) 2011-10-14 2018-02-13 科卢斯博知识产权有限公司 用于直线温度控制熔融的容装浇口
KR20130112549A (ko) 2012-04-04 2013-10-14 박흥균 자외선 경화장치용 광학모듈
US9905444B2 (en) 2012-04-25 2018-02-27 Applied Materials, Inc. Optics for controlling light transmitted through a conical quartz dome
JP6197641B2 (ja) * 2013-12-26 2017-09-20 ウシオ電機株式会社 真空紫外光照射処理装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010287759A (ja) 2009-06-12 2010-12-24 Ushio Inc 光照射装置
KR101483823B1 (ko) * 2012-06-01 2015-01-16 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 반도체용 자외선 경화 시스템

Also Published As

Publication number Publication date
WO2017205714A1 (en) 2017-11-30
KR20180136577A (ko) 2018-12-24
CN109155234B (zh) 2023-08-22
CN109155234A (zh) 2019-01-04
US20170345649A1 (en) 2017-11-30
US10541159B2 (en) 2020-01-21
JP2019518594A (ja) 2019-07-04
JP6902053B2 (ja) 2021-07-14

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