KR102165704B1 - 플라스마 처리 장치 - Google Patents

플라스마 처리 장치 Download PDF

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Publication number
KR102165704B1
KR102165704B1 KR1020180136438A KR20180136438A KR102165704B1 KR 102165704 B1 KR102165704 B1 KR 102165704B1 KR 1020180136438 A KR1020180136438 A KR 1020180136438A KR 20180136438 A KR20180136438 A KR 20180136438A KR 102165704 B1 KR102165704 B1 KR 102165704B1
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KR
South Korea
Prior art keywords
gas
plasma
substrate
insulating layer
chamber
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KR1020180136438A
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English (en)
Korean (ko)
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KR20190056973A (ko
Inventor
요시히코 사사키
마사토 미나미
Original Assignee
도쿄엘렉트론가부시키가이샤
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Publication of KR20190056973A publication Critical patent/KR20190056973A/ko
Application granted granted Critical
Publication of KR102165704B1 publication Critical patent/KR102165704B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
KR1020180136438A 2017-11-17 2018-11-08 플라스마 처리 장치 KR102165704B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017222282A JP6967944B2 (ja) 2017-11-17 2017-11-17 プラズマ処理装置
JPJP-P-2017-222282 2017-11-17

Publications (2)

Publication Number Publication Date
KR20190056973A KR20190056973A (ko) 2019-05-27
KR102165704B1 true KR102165704B1 (ko) 2020-10-14

Family

ID=66556286

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020180136438A KR102165704B1 (ko) 2017-11-17 2018-11-08 플라스마 처리 장치

Country Status (4)

Country Link
JP (1) JP6967944B2 (zh)
KR (1) KR102165704B1 (zh)
CN (1) CN109801827B (zh)
TW (1) TWI789450B (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7228539B2 (ja) * 2019-06-28 2023-02-24 株式会社東芝 スイッチ装置
JP7515327B2 (ja) * 2020-07-13 2024-07-12 東京エレクトロン株式会社 基板離脱方法及びプラズマ処理装置
CN117642843A (zh) * 2021-07-05 2024-03-01 中央硝子株式会社 去除钼的一氟化物至五氟化物的方法和半导体器件的制造方法
CN115780432A (zh) * 2022-09-14 2023-03-14 福建华佳彩有限公司 一种液晶面板干蚀刻机制程腔的自动清洁方法及存储介质
WO2024112078A1 (ko) * 2022-11-21 2024-05-30 고려대학교 세종산학협력단 활성화된 프로톤 어시스트 플라즈마 식각을 포함하는 박막공정 방법 및 장치

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015187850A (ja) * 2014-03-07 2015-10-29 株式会社半導体エネルギー研究所 タッチセンサ、タッチパネル、及びタッチパネルの作製方法
JP2016028448A (ja) 2015-10-22 2016-02-25 東京エレクトロン株式会社 載置台、プラズマ処理装置及び載置台の製造方法

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JPH08507196A (ja) * 1994-01-31 1996-07-30 アプライド マテリアルズ インコーポレイテッド 共形な絶縁体フィルムを有する静電チャック
US6108189A (en) * 1996-04-26 2000-08-22 Applied Materials, Inc. Electrostatic chuck having improved gas conduits
JPH1161448A (ja) * 1997-08-18 1999-03-05 Sony Corp ドライエッチング法
JP4529690B2 (ja) * 2000-01-20 2010-08-25 住友電気工業株式会社 半導体製造装置用ウェハ保持体およびその製造方法ならびに半導体製造装置
US6581275B2 (en) * 2001-01-22 2003-06-24 Applied Materials Inc. Fabricating an electrostatic chuck having plasma resistant gas conduits
JP2006507662A (ja) * 2002-06-28 2006-03-02 東京エレクトロン株式会社 プラズマ処理システム内のアーク抑制方法およびシステム
US7220497B2 (en) * 2003-12-18 2007-05-22 Lam Research Corporation Yttria-coated ceramic components of semiconductor material processing apparatuses and methods of manufacturing the components
JP2008016795A (ja) * 2006-07-06 2008-01-24 Momentive Performance Materials Inc 耐腐食性ウェーハプロセス装置およびその作製方法
CN101101887A (zh) * 2006-07-06 2008-01-09 通用电气公司 抗腐蚀的晶片处理设备及其制造方法
JP4994121B2 (ja) * 2006-08-10 2012-08-08 東京エレクトロン株式会社 静電吸着電極、基板処理装置および静電吸着電極の製造方法
US20090161285A1 (en) * 2007-12-20 2009-06-25 Saint-Gobain Ceramics & Plastics, Inc. Electrostatic chuck and method of forming
KR100997374B1 (ko) * 2009-08-21 2010-11-30 주식회사 코미코 정전척 및 이의 제조 방법
WO2012056807A1 (ja) * 2010-10-25 2012-05-03 日本碍子株式会社 セラミックス材料、積層体、半導体製造装置用部材及びスパッタリングターゲット部材
US9666466B2 (en) * 2013-05-07 2017-05-30 Applied Materials, Inc. Electrostatic chuck having thermally isolated zones with minimal crosstalk
CN106340434B (zh) * 2015-07-10 2018-12-14 东京毅力科创株式会社 等离子体处理装置和喷淋头
JP6670625B2 (ja) * 2015-07-10 2020-03-25 東京エレクトロン株式会社 プラズマ処理装置及びシャワーヘッド
JP2017147278A (ja) * 2016-02-15 2017-08-24 東京エレクトロン株式会社 基板載置台および基板処理装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015187850A (ja) * 2014-03-07 2015-10-29 株式会社半導体エネルギー研究所 タッチセンサ、タッチパネル、及びタッチパネルの作製方法
JP2016028448A (ja) 2015-10-22 2016-02-25 東京エレクトロン株式会社 載置台、プラズマ処理装置及び載置台の製造方法

Also Published As

Publication number Publication date
KR20190056973A (ko) 2019-05-27
CN109801827A (zh) 2019-05-24
TWI789450B (zh) 2023-01-11
TW201933471A (zh) 2019-08-16
JP6967944B2 (ja) 2021-11-17
CN109801827B (zh) 2021-06-15
JP2019096650A (ja) 2019-06-20

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