KR102149573B1 - 복수의 스테이션들에서 웨이퍼 보우 제어 - Google Patents
복수의 스테이션들에서 웨이퍼 보우 제어 Download PDFInfo
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- KR102149573B1 KR102149573B1 KR1020170088772A KR20170088772A KR102149573B1 KR 102149573 B1 KR102149573 B1 KR 102149573B1 KR 1020170088772 A KR1020170088772 A KR 1020170088772A KR 20170088772 A KR20170088772 A KR 20170088772A KR 102149573 B1 KR102149573 B1 KR 102149573B1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32366—Localised processing
- H01J37/32385—Treating the edge of the workpieces
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32577—Electrical connecting means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201662366515P | 2016-07-25 | 2016-07-25 | |
US62/366,515 | 2016-07-25 | ||
US15/640,053 US10553465B2 (en) | 2016-07-25 | 2017-06-30 | Control of water bow in multiple stations |
US15/640,053 | 2017-06-30 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020200106486A Division KR102188339B1 (ko) | 2016-07-25 | 2020-08-24 | 복수의 스테이션들에서 웨이퍼 보우 제어 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20180011712A KR20180011712A (ko) | 2018-02-02 |
KR102149573B1 true KR102149573B1 (ko) | 2020-08-31 |
Family
ID=60990113
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020170088772A KR102149573B1 (ko) | 2016-07-25 | 2017-07-13 | 복수의 스테이션들에서 웨이퍼 보우 제어 |
KR1020200106486A KR102188339B1 (ko) | 2016-07-25 | 2020-08-24 | 복수의 스테이션들에서 웨이퍼 보우 제어 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020200106486A KR102188339B1 (ko) | 2016-07-25 | 2020-08-24 | 복수의 스테이션들에서 웨이퍼 보우 제어 |
Country Status (5)
Country | Link |
---|---|
US (4) | US10553465B2 (zh) |
JP (1) | JP7037894B2 (zh) |
KR (2) | KR102149573B1 (zh) |
CN (2) | CN107658200B (zh) |
TW (1) | TWI760349B (zh) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10553465B2 (en) * | 2016-07-25 | 2020-02-04 | Lam Research Corporation | Control of water bow in multiple stations |
US10896806B2 (en) * | 2016-11-03 | 2021-01-19 | En2Core Technology, Inc. | Inductive coil structure and inductively coupled plasma generation system |
JP7286666B2 (ja) * | 2018-02-23 | 2023-06-05 | ラム リサーチ コーポレーション | 高電力回路からの切り離しを伴わない静電容量測定 |
KR20230048459A (ko) * | 2018-06-22 | 2023-04-11 | 도쿄엘렉트론가부시키가이샤 | 제어 방법 및 플라즈마 처리 장치 |
JP7175239B2 (ja) * | 2018-06-22 | 2022-11-18 | 東京エレクトロン株式会社 | 制御方法、プラズマ処理装置、プログラム及び記憶媒体 |
US10304663B1 (en) * | 2018-07-19 | 2019-05-28 | Lam Research Corporation | RF generator for generating a modulated frequency or an inter-modulated frequency |
US10991550B2 (en) | 2018-09-04 | 2021-04-27 | Lam Research Corporation | Modular recipe controlled calibration (MRCC) apparatus used to balance plasma in multiple station system |
WO2020092005A1 (en) * | 2018-10-30 | 2020-05-07 | Lam Research Corporation | Substrate state detection for plasma processing tools |
KR20210089254A (ko) * | 2018-12-05 | 2021-07-15 | 램 리써치 코포레이션 | 기판 내에 격리 피처들 및 치밀 피처들 에칭 |
US11437262B2 (en) * | 2018-12-12 | 2022-09-06 | Applied Materials, Inc | Wafer de-chucking detection and arcing prevention |
US11515123B2 (en) | 2018-12-21 | 2022-11-29 | Advanced Energy Industries, Inc. | Apparatus and system for modulated plasma systems |
US11804362B2 (en) * | 2018-12-21 | 2023-10-31 | Advanced Energy Industries, Inc. | Frequency tuning for modulated plasma systems |
KR20200078729A (ko) | 2018-12-21 | 2020-07-02 | 삼성전자주식회사 | 플라즈마 챔버로부터 수신되는 신호를 필터링하기 위한 전자 회로 |
US10720305B2 (en) | 2018-12-21 | 2020-07-21 | Advanced Energy Industries, Inc. | Plasma delivery system for modulated plasma systems |
WO2020214477A1 (en) * | 2019-04-15 | 2020-10-22 | Lam Research Corporation | Early warning systems and methods for determining capacitor failures |
KR20200126177A (ko) * | 2019-04-29 | 2020-11-06 | 삼성전자주식회사 | Rf 파워 모니터링 장치, 및 그 장치를 포함하는 pe 시스템 |
TWI737996B (zh) * | 2019-05-16 | 2021-09-01 | 華景電通股份有限公司 | 晶圓載具監控系統及其監控方法 |
WO2021021955A1 (en) | 2019-07-29 | 2021-02-04 | Advanced Energy Industries, Inc. | Multiplexed power generator output with channel offsets for pulsed driving of multiple loads |
JP7233348B2 (ja) * | 2019-09-13 | 2023-03-06 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
US11631583B2 (en) | 2019-10-25 | 2023-04-18 | Applied Materials, Inc. | RF power source operation in plasma enhanced processes |
WO2021118862A2 (en) * | 2019-12-13 | 2021-06-17 | Lam Research Corporation | Multi-state pulsing for achieving a balance between bow control and mask selectivity |
WO2024072496A1 (en) * | 2022-09-28 | 2024-04-04 | Applied Materials, Inc. | Broadband supply circuitry for a plasma processing system |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1998037627A1 (en) | 1997-02-24 | 1998-08-27 | Advanced Energy Industries, Inc. | Series powered, parallel output radio frequency generator |
JP2003509837A (ja) | 1999-07-13 | 2003-03-11 | 東京エレクトロン株式会社 | 誘導結合プラズマを発生させるための高周波電源 |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW434636B (en) | 1998-07-13 | 2001-05-16 | Applied Komatsu Technology Inc | RF matching network with distributed outputs |
US7137354B2 (en) * | 2000-08-11 | 2006-11-21 | Applied Materials, Inc. | Plasma immersion ion implantation apparatus including a plasma source having low dissociation and low minimum plasma voltage |
US6887339B1 (en) * | 2000-09-20 | 2005-05-03 | Applied Science And Technology, Inc. | RF power supply with integrated matching network |
US6583572B2 (en) * | 2001-03-30 | 2003-06-24 | Lam Research Corporation | Inductive plasma processor including current sensor for plasma excitation coil |
US7042311B1 (en) * | 2003-10-10 | 2006-05-09 | Novellus Systems, Inc. | RF delivery configuration in a plasma processing system |
US7879185B2 (en) | 2003-12-18 | 2011-02-01 | Applied Materials, Inc. | Dual frequency RF match |
US7276135B2 (en) * | 2004-05-28 | 2007-10-02 | Lam Research Corporation | Vacuum plasma processor including control in response to DC bias voltage |
US7169256B2 (en) * | 2004-05-28 | 2007-01-30 | Lam Research Corporation | Plasma processor with electrode responsive to multiple RF frequencies |
US7777567B2 (en) | 2007-01-25 | 2010-08-17 | Mks Instruments, Inc. | RF power amplifier stability network |
US8129283B2 (en) * | 2007-02-13 | 2012-03-06 | Hitachi High-Technologies Corporation | Plasma processing method and plasma processing apparatus |
CN101287327B (zh) * | 2007-04-13 | 2011-07-20 | 中微半导体设备(上海)有限公司 | 射频功率源系统及使用该射频功率源系统的等离子体反应腔室 |
GB0823565D0 (en) * | 2008-12-24 | 2009-01-28 | Oxford Instr Plasma Technology | Signal generating system |
US9305750B2 (en) * | 2009-06-12 | 2016-04-05 | Lam Research Corporation | Adjusting current ratios in inductively coupled plasma processing systems |
KR100934402B1 (ko) | 2009-09-07 | 2009-12-31 | 아리온테크 주식회사 | 알에프 스플리트 모니터링 시스템 |
KR101151414B1 (ko) | 2010-02-23 | 2012-06-04 | 주식회사 플라즈마트 | 임피던스 정합 장치 |
US9997357B2 (en) * | 2010-04-15 | 2018-06-12 | Lam Research Corporation | Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors |
US20120000888A1 (en) * | 2010-06-30 | 2012-01-05 | Applied Materials, Inc. | Methods and apparatus for radio frequency (rf) plasma processing |
US20120164834A1 (en) * | 2010-12-22 | 2012-06-28 | Kevin Jennings | Variable-Density Plasma Processing of Semiconductor Substrates |
JP5781349B2 (ja) * | 2011-03-30 | 2015-09-24 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US9502216B2 (en) * | 2013-01-31 | 2016-11-22 | Lam Research Corporation | Using modeling to determine wafer bias associated with a plasma system |
US9779196B2 (en) * | 2013-01-31 | 2017-10-03 | Lam Research Corporation | Segmenting a model within a plasma system |
US10125422B2 (en) | 2013-03-27 | 2018-11-13 | Applied Materials, Inc. | High impedance RF filter for heater with impedance tuning device |
US9797042B2 (en) * | 2014-05-15 | 2017-10-24 | Lam Research Corporation | Single ALD cycle thickness control in multi-station substrate deposition systems |
US9263350B2 (en) * | 2014-06-03 | 2016-02-16 | Lam Research Corporation | Multi-station plasma reactor with RF balancing |
US10187032B2 (en) * | 2016-06-17 | 2019-01-22 | Lam Research Corporation | Combiner and distributor for adjusting impedances or power across multiple plasma processing stations |
US10553465B2 (en) * | 2016-07-25 | 2020-02-04 | Lam Research Corporation | Control of water bow in multiple stations |
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2017
- 2017-06-30 US US15/640,053 patent/US10553465B2/en active Active
- 2017-07-13 KR KR1020170088772A patent/KR102149573B1/ko active IP Right Grant
- 2017-07-14 JP JP2017137687A patent/JP7037894B2/ja active Active
- 2017-07-24 TW TW106124681A patent/TWI760349B/zh active
- 2017-07-25 CN CN201710609934.9A patent/CN107658200B/zh active Active
- 2017-07-25 CN CN202010186094.1A patent/CN111508810B/zh active Active
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2019
- 2019-12-16 US US16/715,926 patent/US11183406B2/en active Active
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2020
- 2020-08-24 KR KR1020200106486A patent/KR102188339B1/ko active IP Right Grant
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2021
- 2021-10-29 US US17/515,261 patent/US11823928B2/en active Active
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2023
- 2023-10-25 US US18/494,710 patent/US20240055285A1/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1998037627A1 (en) | 1997-02-24 | 1998-08-27 | Advanced Energy Industries, Inc. | Series powered, parallel output radio frequency generator |
JP2003509837A (ja) | 1999-07-13 | 2003-03-11 | 東京エレクトロン株式会社 | 誘導結合プラズマを発生させるための高周波電源 |
Also Published As
Publication number | Publication date |
---|---|
CN111508810A (zh) | 2020-08-07 |
JP2018022685A (ja) | 2018-02-08 |
US11183406B2 (en) | 2021-11-23 |
US10553465B2 (en) | 2020-02-04 |
US11823928B2 (en) | 2023-11-21 |
JP7037894B2 (ja) | 2022-03-17 |
KR102188339B1 (ko) | 2020-12-09 |
US20180025930A1 (en) | 2018-01-25 |
CN107658200B (zh) | 2020-04-14 |
CN111508810B (zh) | 2023-08-08 |
US20220051919A1 (en) | 2022-02-17 |
CN107658200A (zh) | 2018-02-02 |
TWI760349B (zh) | 2022-04-11 |
US20200118856A1 (en) | 2020-04-16 |
KR20180011712A (ko) | 2018-02-02 |
US20240055285A1 (en) | 2024-02-15 |
KR20200104269A (ko) | 2020-09-03 |
TW201816832A (zh) | 2018-05-01 |
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