KR102145647B1 - 발광 사파이어를 하향-변환기로 사용하는 led - Google Patents

발광 사파이어를 하향-변환기로 사용하는 led Download PDF

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KR102145647B1
KR102145647B1 KR1020157021999A KR20157021999A KR102145647B1 KR 102145647 B1 KR102145647 B1 KR 102145647B1 KR 1020157021999 A KR1020157021999 A KR 1020157021999A KR 20157021999 A KR20157021999 A KR 20157021999A KR 102145647 B1 KR102145647 B1 KR 102145647B1
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light
sapphire
led
luminescent
semiconductor layers
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KR20150110611A (ko
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그레구아르 프랑쑤아 플로렁 드니
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루미리즈 홀딩 비.브이.
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H10H20/8513—Wavelength conversion materials having two or more wavelength conversion materials
    • H01L33/502—
    • H01L33/007—
    • H01L33/0095—
    • H01L33/025—
    • H01L33/505—
    • H—ELECTRICITY
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H01L2924/12041—
    • H01L2933/0041—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0362—Manufacture or treatment of packages of encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/872—Periodic patterns for optical field-shaping, e.g. photonic bandgap structures

Landscapes

  • Led Devices (AREA)
  • Luminescent Compositions (AREA)
  • Led Device Packages (AREA)
KR1020157021999A 2013-01-16 2014-01-02 발광 사파이어를 하향-변환기로 사용하는 led Expired - Fee Related KR102145647B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361753175P 2013-01-16 2013-01-16
US61/753,175 2013-01-16
US201361831244P 2013-06-05 2013-06-05
US61/831,244 2013-06-05
PCT/IB2014/058016 WO2014111822A1 (en) 2013-01-16 2014-01-02 Led using luminescent sapphire as down-converter

Publications (2)

Publication Number Publication Date
KR20150110611A KR20150110611A (ko) 2015-10-02
KR102145647B1 true KR102145647B1 (ko) 2020-08-19

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KR1020157021999A Expired - Fee Related KR102145647B1 (ko) 2013-01-16 2014-01-02 발광 사파이어를 하향-변환기로 사용하는 led

Country Status (7)

Country Link
US (2) US20160027969A1 (cg-RX-API-DMAC10.html)
EP (1) EP2946409B1 (cg-RX-API-DMAC10.html)
JP (1) JP6622090B2 (cg-RX-API-DMAC10.html)
KR (1) KR102145647B1 (cg-RX-API-DMAC10.html)
CN (2) CN104904024A (cg-RX-API-DMAC10.html)
RU (1) RU2686862C2 (cg-RX-API-DMAC10.html)
WO (1) WO2014111822A1 (cg-RX-API-DMAC10.html)

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US9528876B2 (en) * 2014-09-29 2016-12-27 Innovative Science Tools, Inc. Solid state broad band near-infrared light source
US10217914B2 (en) * 2015-05-27 2019-02-26 Samsung Electronics Co., Ltd. Semiconductor light emitting device
TWI644454B (zh) * 2015-08-19 2018-12-11 佰鴻工業股份有限公司 Light-emitting diode structure
JP2018022844A (ja) 2016-08-05 2018-02-08 日亜化学工業株式会社 発光装置及び発光装置の製造方法
EP3309446A1 (en) * 2016-10-17 2018-04-18 Lumileds Holding B.V. Light converting device with clamped light converter
JP2020503679A (ja) * 2016-12-22 2020-01-30 ルミレッズ リミテッド ライアビリティ カンパニー 動作フィードバックのためのセンサセグメントを備えた発光ダイオード
US10957825B2 (en) * 2017-09-25 2021-03-23 Lg Innotek Co., Ltd. Lighting module and lighting apparatus having thereof
CN111630449B (zh) * 2017-11-21 2022-03-29 亮锐有限责任公司 颜色误差校正的分段式led阵列

Citations (4)

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WO2001037351A1 (en) * 1999-11-19 2001-05-25 Cree Lighting Company Multi color solid state led/laser
JP2002335010A (ja) * 2001-03-05 2002-11-22 Nichia Chem Ind Ltd 窒化物半導体発光素子
JP2004363149A (ja) 2003-06-02 2004-12-24 Matsushita Electric Ind Co Ltd 発光素子およびその製造方法ならびに蛍光体基板とその製造方法
WO2010079779A1 (ja) * 2009-01-07 2010-07-15 財団法人新産業創造研究機構 波長可変レーザー発振酸化物結晶の作製方法

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RU2202843C2 (ru) * 2001-04-27 2003-04-20 Институт проблем химической физики РАН Полупроводниковый электролюминесцентный источник света с перестраиваемым цветом свечения
JP2002344021A (ja) * 2001-05-16 2002-11-29 Nichia Chem Ind Ltd 発光装置
DE60228314D1 (de) 2001-12-04 2008-09-25 Landauer Inc Aluminiumoxidwerkstoff für die optische datenspeicherung
JP2004253743A (ja) * 2003-02-21 2004-09-09 Nichia Chem Ind Ltd 付活剤を含有した基板を用いた発光装置
EP1760794B1 (en) 2004-06-24 2014-01-15 Ube Industries, Ltd. White light emitting diode device
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WO2001037351A1 (en) * 1999-11-19 2001-05-25 Cree Lighting Company Multi color solid state led/laser
JP2002335010A (ja) * 2001-03-05 2002-11-22 Nichia Chem Ind Ltd 窒化物半導体発光素子
JP2004363149A (ja) 2003-06-02 2004-12-24 Matsushita Electric Ind Co Ltd 発光素子およびその製造方法ならびに蛍光体基板とその製造方法
WO2010079779A1 (ja) * 2009-01-07 2010-07-15 財団法人新産業創造研究機構 波長可変レーザー発振酸化物結晶の作製方法

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Publication number Publication date
US20160254420A1 (en) 2016-09-01
KR20150110611A (ko) 2015-10-02
US20160027969A1 (en) 2016-01-28
US10181551B2 (en) 2019-01-15
WO2014111822A1 (en) 2014-07-24
RU2015134352A (ru) 2017-02-21
CN104904024A (zh) 2015-09-09
EP2946409B1 (en) 2019-12-18
JP2016508294A (ja) 2016-03-17
RU2686862C2 (ru) 2019-05-06
CN111697119A (zh) 2020-09-22
JP6622090B2 (ja) 2019-12-18
EP2946409A1 (en) 2015-11-25

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