KR102140279B1 - Light emitting device and light emitting device package including the device - Google Patents

Abstract

The light emitting device of the embodiment includes a substrate, a plurality of light emitting cells disposed on the substrate, and a first insulating layer disposed between a connecting electrode connecting the plurality of light emitting cells to each other and a neighboring light emitting cell connected by the connecting electrode and the connecting electrode. Each of the plurality of light emitting cells includes a light emitting structure including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer; And at least one electrode hole formed in the shape of a blind hole in the thickness direction of the light emitting structure in the center of the width of the light emitting cell to expose the first conductivity type semiconductor layer, and the connecting electrode is formed in the at least one electrode hole. It penetrates through the insulating layer and is connected to the first conductive semiconductor layer of one of the neighboring light emitting cells and connected to the second conductive semiconductor layer of the other of the neighboring light emitting cells.

Description

Light emitting device and light emitting device package including the same {Light emitting device and light emitting device package including the device}

The embodiment relates to a light emitting device and a light emitting device package including the same.

Red, green, and blue light emitting diodes (LEDs) capable of realizing high luminance and white light have been developed based on the development of gallium nitride (GaN) metal organic chemical vapor deposition and molecular beam growth.

These LEDs do not contain environmentally harmful substances such as mercury (Hg) used in existing lighting fixtures such as incandescent lamps and fluorescent lamps, so they have excellent eco-friendliness, and have advantages such as long life and low power consumption characteristics. Is replacing it. The key competing element of these LED devices is the implementation of high brightness by high efficiency, high power chip and packaging technology.

In order to realize high luminance, it is important to increase the light extraction efficiency. Flip-chip structure, surface texturing, patterned sapphire substrate (PSS), photonic crystal technology, and anti-reflection to increase light extraction efficiency layer) Various methods using structures and the like have been studied.

In general, a light emitting device includes a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer positioned on a substrate, a first electrode for supplying first power to the first conductivity type semiconductor layer, A second electrode for supplying a second power to the second conductivity-type semiconductor layer may be included.

Many studies have been conducted to improve the electrical and optical characteristics of the above-described light emitting device and the light emitting device package including the same.

The embodiment provides a light emitting device having improved optical and electrical properties and a light emitting device package including the same.

The light emitting device of the embodiment includes a substrate; A plurality of light emitting cells disposed on the substrate; A connecting electrode connecting a plurality of light emitting cells to each other; And a first insulating layer disposed between the adjacent light emitting cells connected by the connection electrode and the connection electrode, wherein each of the plurality of light emitting cells comprises a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer. A light emitting structure comprising; And at least one electrode hole formed in the shape of a blind hole in the thickness direction of the light emitting structure in the center of the width of the light emitting cell to expose the first conductivity type semiconductor layer, and the connection electrode is the at least one electrode. Through the first insulating layer buried in the hole, the first conductive type semiconductor layer of one of the neighboring light emitting cells may be connected to the second conductive type semiconductor layer of the other of the neighboring light emitting cells. .

The light emitting device may include a first electrode unit connected to the first conductive semiconductor layer through the first insulating layer embedded in the at least one electrode hole of any one of the plurality of light emitting cells; And a second electrode part connected to the second conductivity type semiconductor layer included in the other one of the plurality of light emitting cells.

Each of the plurality of light emitting cells may further include a reflective layer disposed on the second conductivity type semiconductor layer.

The connection electrode is connected to the second conductive type semiconductor layer through the reflective layer included in the other one of the neighboring light emitting cells, and the second electrode part is included in the other one of the plurality of light emitting cells The second conductive type semiconductor layer may be connected to the second conductive type semiconductor layer through a reflective layer.

In each of the plurality of light emitting cells, the number of the at least one electrode hole, the size of the at least one electrode hole, the spacing between the plurality of electrode holes when the at least one electrode hole includes a plurality of electrode holes, or the plurality of At least one of the directions in which the electrode holes are arranged may be determined according to at least one of a planar shape, a planar size, or a desired current density of the corresponding light emitting cell.

The plurality of electrode holes are disposed at equal intervals from each other in at least one of the first or second directions, and each of the first and second directions may be a different direction from the thickness direction. The first direction, the second direction, and the thickness direction may be perpendicular to each other.

The plurality of electrode holes may be arranged at the center of at least one of a horizontal width and a vertical width of the light emitting cell.

Half of the first distance, which is the shortest distance between the electrode holes, which is the closest to each other, among the plurality of electrode holes may correspond to a second distance, which is the shortest distance between the edge of the light emitting cell and the electrode hole. Alternatively, the second distance may be greater than the first distance. Alternatively, the second distance and the first distance may be the same.

The first distance may correspond to a shortest distance between a boundary and a boundary of the neighboring electrode hole, and the second distance may correspond to a shortest distance between the edge and the boundary of the electrode hole. Alternatively, the first distance may correspond to a distance between the center and the center of the adjacent electrode hole, and the second distance may correspond to the shortest distance between the edge and the center of the electrode hole.

The lower the current density, the shorter the separation distance between the electrode holes that are closest to each other among the plurality of electrode holes may be determined.

The closest horizontal separation distance between neighboring connecting electrodes may be 5 μm or more.

The first insulating layer may include a first insulating segment disposed between the neighboring light emitting cell and the connection electrode; A second insulating segment disposed between adjacent connection electrodes in each of the first light emitting cells in which the first and second electrode parts are not disposed among the plurality of light emitting cells; A third insulating segment disposed between the first electrode portion and the connection electrode in the second light emitting cell in which the first electrode portion is disposed among the plurality of light emitting cells; And a fourth insulating segment disposed between the second electrode portion and the connection electrode in the third light emitting cell in which the second electrode portion is disposed among the plurality of light emitting cells.

The light emitting device further includes a second insulating layer disposed on the second to fourth insulating segments and on the connection electrode, and the first and second electrode portions include the first and second insulating layers. Through it may be connected to the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, respectively.

The light emitting device may further include a metal electrode passing through the first insulating layer and disposed between the first electrode part and the first conductivity type semiconductor layer.

The closest horizontal separation distance between the metal electrode and the connection electrode may be 5 μm or more.

The constituent material of the metal electrode and the constituent material of the connection electrode may be the same or different from each other.

The electrode hole may have a circular planar shape.

A light emitting device package according to another embodiment includes a sub-mount; First and second metal layers spaced apart from each other on the sub-mount; The light emitting element; And first and second bump portions electrically connecting the light emitting element and the sub-mount.

The light emitting device according to the embodiment and the light emitting device package including the same can spread the carrier uniformly by forming at least one electrode hole in the center of the width direction perpendicular to the thickness direction of the light emitting cell, and in particular, in a circular flat shape By having an electrode hole, the carrier can be spread more uniformly in a radial direction, thereby improving the internal quantum efficiency affected by the spreading of the carrier, thereby improving the electrical conductivity, which is an electrical property, and also not relying on local reliability. Can be maximized. In addition, in the case of the light emitting device according to the embodiment and the light emitting device package including the same, since the connecting electrode is connected to the first conductive type semiconductor layer through the electrode hole, the horizontal separation distance between the connecting electrodes may be much smaller than before. By making it possible to efficiently use a small area allocated for the light emitting device, that is, to reduce the overall width of the light emitting device, the number of electrode holes to fit at least one of the planar shape, plane size, or desired current density of the light emitting device , It is possible to adjust at least one of the spacing of the electrode holes, the size of the electrode holes, or the direction in which the plurality of electrode holes are arranged, and in particular, by adjusting the number and size of the electrode holes included in the unit light emitting cell, electrical and/or optical characteristics of the light emitting device. Can be improved by selectively focusing.

1 is a plan view of a light emitting device according to an embodiment.
2 is a cross-sectional view of a light emitting device cut along the line A-A' shown in FIG. 1.
3A is a plan view of the second light emitting cell shown in FIG. 1.
3B is a cross-sectional view of the second light emitting cell shown in FIG. 3A taken along the line B-B'.
4A to 4H are plan views of second light emitting cells according to other embodiments.
5 is a plan view of a second light emitting cell according to another embodiment.
6 is a plan view of a second light emitting cell according to another embodiment.
7 shows a circuit diagram of the light emitting device shown in FIGS. 1 and 2.
8A to 8C are plan views of light emitting devices according to embodiments.
9 shows local sectional views of light emitting devices according to comparative examples, respectively.
10A to 10G are process cross-sectional views illustrating a method of manufacturing the light emitting devices illustrated in FIGS. 1 and 2.
11 shows a light emitting device package including a light emitting device according to an embodiment.
12 shows a head lamp including a light emitting device package according to an embodiment.
13 shows a lighting device including a light emitting device or a light emitting device package according to an embodiment.

Hereinafter, examples will be described to specifically describe the present invention, and the present invention will be described in detail with reference to the accompanying drawings. However, the embodiments according to the present invention may be modified in various other forms, and the scope of the present invention should not be interpreted as being limited to the embodiments described below. Embodiments of the present invention are provided to more fully describe the present invention to those skilled in the art.

In the description of the embodiment according to the present invention, in the case of being described as being formed on "top (top)" or "bottom (bottom)" of each element, the top (top) or bottom (bottom) (on or under) includes both two elements directly contacting each other or one or more other elements formed indirectly between the two elements. In addition, when expressed as “up (up)” or “down (down)” (on or under), it may include the meaning of the downward direction as well as the upward direction based on one element.

In addition, relational terms such as "first" and "second," "top/top/top" and "bottom/bottom/bottom", as used hereinafter, may include any physical or logical relationship between such entities or elements, or It may be used only to distinguish one entity or element from another, without necessarily requiring or implying order.

In the drawings, the thickness or size of each layer is exaggerated, omitted, or schematically illustrated for convenience and clarity. Also, the size of each component does not entirely reflect the actual size.

1 is a plan view of a light emitting device 100 according to an embodiment, and FIG. 2 is a cross-sectional view of the light emitting device 100 cut along the line A-A' shown in FIG. 1.

1 and 2, the light emitting device 100 includes a substrate 110, N (where N is a positive integer of 2 or more) light emitting cells (or light emitting regions) (P1 to PN), and M (where , 1 ≤ M ≤ N-1) connecting electrodes 150-1 to 150-M, first insulating layers 162-1, 162-2, 164, 166-1, 166-2, 168-1, 168 -2), a first electrode portion 172, a second electrode portion 174, a metal electrode 180 and a second insulating layer 190.

Hereinafter, in order to help understanding of the embodiment, it will be described assuming that N=3 as illustrated in FIGS. 1 and 2.

The plurality of light emitting cells P1, P2, and P3 are disposed on the substrate 110.

The substrate 110 may be formed of a material suitable for semiconductor material growth, a carrier wafer. In addition, the substrate 110 may be formed of a material having excellent thermal conductivity, and may be a conductive substrate or an insulating substrate. For example, the substrate 110 may be a material including at least one of sapphire (Al ₂ 0 ₃ ), GaN, SiC, ZnO, Si, GaP, InP, Ga ₂ 0 ₃ , GaAs. The uneven pattern 112 may be formed on the upper surface of the substrate 110. That is, the substrate 110 may be a patterned sapphire substrate (PSS) having an uneven pattern. As described above, when the upper surface of the substrate 110 has the uneven pattern 112, light extraction efficiency may be improved.

Although not illustrated in FIG. 2, a buffer layer is disposed between the substrate 110 and the light emitting structure 120 and may be formed using a compound semiconductor of group 3-5. The buffer layer serves to reduce the difference in the lattice constant between the substrate 110 and the light emitting structure 120.

The plurality of light emitting cells P1, P2, and P3 may be electrically connected in series as illustrated in FIGS. 1 and 2, but embodiments are not limited thereto. That is, according to another embodiment, the plurality of light emitting cells P1, P2, and P3 may be electrically connected in parallel. Hereinafter, the plurality of light emitting cells P1, P2, and P3 electrically connected to each other are referred to as first, second, and third light emitting cells, respectively.

1 and 2, the first to third light emitting cells P1, P2, and P3 may be separated from each other by a boundary area S. Accordingly, the boundary area S may be an area located between the first to third light emitting cells P1, P2, and P3 and around the first to third light emitting cells P1, P2, and P3. The boundary region S may include a region in which a part of the substrate 110 is exposed by mesa etching the light emitting structure 120.

Each of the first, second, and third light emitting cells P1, P2, and P3 may have the same area, but embodiments are not limited thereto.

Each of the first, second, and third light emitting cells P1, P2, and P3 may include a light emitting structure 120, reflective layers 132, 134, and conductive layers 142, 144.

First, the light emitting structure 120 may be a semiconductor layer that generates light, and includes a first conductivity type semiconductor layer 122, an active layer 124, and a second conductivity type semiconductor layer 126. The first conductive semiconductor layer 122, the active layer 124, and the second conductive semiconductor layer 126 may be sequentially stacked on the substrate 110.

The first conductivity type semiconductor layer 122 may be formed of a compound semiconductor such as a group 3-5 group or a group 2-6 group, and the first conductivity type dopant may be doped. For example, the first conductivity type semiconductor layer 122 is a semiconductor having a composition formula of In _x Al _y Ga _{1 -x- y} N (0 ≤ x ≤ 1, 0 ≤ y ≤ 1, 0 ≤ x+y ≤ 1) Can. For example, the first conductivity type semiconductor layer 122 may include any one of InAlGaN, GaN, AlGaN, InGaN, AlN, and InN, and an n-type dopant (eg, Si, Ge, Sn, etc.) may be doped. .

If the light emitting device 100 illustrated in FIGS. 1 and 2 is applied to the light emitting device package 200 having a flip chip bonding structure as illustrated in FIG. 11, the substrate 110 and the first conductivity type semiconductor layer 122 may include a light-transmitting material.

The active layer 124 is disposed between the first conductivity-type semiconductor layer 122 and the second conductivity-type semiconductor layer 126, and is respectively from the first conductivity-type semiconductor layer 122 and the second conductivity-type semiconductor layer 126. Light may be generated by energy generated in the process of recombination of provided electrons and holes.

The active layer 124 may be a semiconductor compound, for example, a compound semiconductor of group 3-5 or 2-6, double junction structure, single well structure, multiple well structure, quantum-wire structure, or It may be formed of a quantum dot (Quantum Dot) structure.

When the active layer 124 has a quantum well structure, for example, a well layer having a composition formula of In _x Al _y Ga _{1 -x- y} N (0 ≤ x ≤ 1, 0 ≤ y ≤ 1, 0 ≤ x+y ≤ 1) And In _a Al _b Ga _{1 -a- b} N (0 ≤ a ≤ 1, 0 ≤ b ≤ 1, 0 ≤ a+b ≤ 1) may have a single or quantum well structure with a barrier layer having a composition formula . The well layer may be a material having a band gap lower than the energy band gap of the barrier layer.

The second conductivity type semiconductor layer 126 may be formed of a compound semiconductor such as a group 3-5 group or a group 2-6 group, and the second conductivity type dopant may be doped. For example, the second conductivity-type semiconductor layer 126 is a semiconductor having a composition formula of In _x Al _y Ga _{1 -x- y} N (0 ≤ x ≤ 1, 0 ≤ y ≤ 1, 0 ≤ x+y ≤ 1) Can. For example, the second conductivity type semiconductor layer 126 may include any one of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, and p-type dopants (e.g. , Mg, Zn, Ca, Sr, Ba) may be doped.

A conductive clad layer (not shown) may be disposed between the active layer 124 and the first conductive semiconductor layer 122 or between the active layer 124 and the second conductive semiconductor layer 126. , The conductive clad layer may be formed of a nitride semiconductor (eg, AlGaN).

According to an embodiment, the first conductivity type semiconductor layer 122 may be an n-type semiconductor layer, and the second conductivity type semiconductor layer may be a p-type semiconductor layer. Accordingly, the light emitting structure 120 may include at least one of an n-p junction, a p-n junction, an n-p-n junction, and a p-n-p junction structure.

Meanwhile, the reflective layers 132 and 134 are disposed on the second conductive semiconductor layer 126 of the light emitting structure 120 and may have a single layer structure or a multi-layer structure. For example, the reflective layers 132 and 134 may have a triple layer structure of a first layer/second layer/third layer. In the reflective layers 132 and 134, the first layer serves as light reflection, the second layer disposed over the first layer acts as a barrier layer, and the third layer disposed over the second layer enhances passivation adhesion Can act as a layer.

In addition, the reflective layers 132 and 134 have higher reflectivity, and may have, for example, a reflectivity of 70% or more. That is, the reflective layers 132 and 134 may include a material having a reflectivity of 70% or more.

In addition, the reflective layers 132 and 134 may include a material having excellent adhesion to the conductive layers 142 and 144.

If the conductive layers 142 and 144 are omitted, the reflective layers 132 and 134 may directly contact the second conductive semiconductor layer 126. In this case, the reflective layers 132 and 134 may include a material capable of ohmic contact with the second conductive type semiconductor layer 126, and may include a material having excellent adhesion to the second conductive type semiconductor layer 126.

For example, the reflective layers 132 and 134 may be a reflective metal having high electrical conductivity or an alloy thereof, for example, Ni, Pd, Ru, Mg, Zn, Hf, Ag, Al, Au, Pt, Cu or Rh It may include at least one.

In addition, the thicker the second thickness t2 of the reflective layers 132 and 134 may be advantageous for high current operation. In addition, when the second thickness t2 of the reflective layers 132 and 134 is less than 0.5 nm, the reflectivity of the reflective layers 132 and 134 may decrease. For example, the reflective layers 132 and 134 may have a second thickness t2 of 0.5 nm to 4 μm, for example, 50 nm or more.

Meanwhile, the conductive layers 142 and 144 are disposed between the reflective layers 132 and 134 and the second conductive semiconductor layer 126, and may have light transmission properties. The conductive layers 142 and 144 not only reduce total reflection, but also have good light transmission properties.

The conductive layers 142 and 144 are transparent oxide-based materials having high transmittance with respect to the emission wavelength, such as Indium Tin Oxide (ITO), Tin Oxide (TO), Indium Zinc Oxide (IZO), Indium Zinc Tin Oxide (IZTO), Indium Aluminum Zinc Oxide (IAZO), Indium Gallium Zinc Oxide (IGZO), Indium Gallium Tin Oxide (IGTO), Aluminum Zinc Oxide (AZO), Aluminum Tin Oxide (ATO), Gallium Zinc Oxide (GTO), IrOx, RuOx, RuOx /ITO, Ni, Ag, Ni/IrOx/Au, or one or more of Ni/IrOx/Au/ITO can be implemented in a single layer or in multiple layers.

According to an embodiment, since the reflective layers 132 and 134 are disposed on the conductive layers 142 and 144, the first thickness t1 of the conductive layers 142 and 144 may be thinly formed. That is, the thicker the second thickness t2 of the reflective layers 132 and 134, the thinner the first thickness t1 of the conductive layers 142 and 144 may be. As the first thickness t1 of the conductive layers 142 and 144 is thicker, light absorption in the conductive layers 142 and 144 increases, and as it is thinner, light absorption in the conductive layers 142 and 144 decreases. Therefore, according to the embodiment, because the reflective layers 132 and 134 are disposed on the conductive layers 142 and 144, the first thickness t1 of the conductive layers 142 and 144 can be thinly formed. The optical properties of 100) can be improved.

Alternatively, the first thickness t1 of the conductive layers 142 and 144 may not be correlated with the second thickness t2 of the reflective layers 132 and 134.

When the first thickness t1 of the conductive layers 142 and 144 is greater than 1 nm, absorption of light may be increased in the conductive layers 142 and 144. The first thickness t1 may be 0.5 nm to 4 μm, preferably 0.5 nm to 80 nm, for example, 1 nm, but the embodiment is not limited thereto.

In addition, when the reflective layers 132 and 134 include a material capable of ohmic contact with the second conductivity type semiconductor layer 126, the conductive layers in the first, second, and third light emitting cells P1, P2, and P3, respectively (142, 144) may be omitted. However, even if the reflective layers 132 and 134 include a material capable of ohmic contact with the second conductivity type semiconductor layer 126, when the light emitting device 100 includes the conductive layers 142 and 144, the light emitting device The reliability of 100 can be improved. Because, the conductive layers 142 and 144 block the penetration of carriers from the reflective layers 132 and 134 to the second conductive semiconductor layer 126, and the conductive layers 142 and 144 act as a kind of carrier barrier layer. Because you can.

In addition, in some cases, the reflective layers 132 and 134 and the conductive layers 142 and 144 may be omitted in each of the first, second, and third light emitting cells P1, P2, and P3, respectively.

In addition, the first width W1 in the first direction X of the upper surface 126A of the second conductive type semiconductor layer 126 on which the reflective layers 132 and 134 are disposed, is made of the conductive layers 142 and 144. The second width W2 in the first direction X and the third width W3 in the first direction X of the reflective layers 132 and 134 may be the same as in Equation 1 below.

Here, referring to FIG. 1, the first direction X is different from the second direction Y, and the first and second directions X and Y may be perpendicular to each other. In addition, referring to FIG. 2, the first direction X is different from the third direction Z which is a thickness direction of the light emitting structure 120, and the first and third directions X and Z may be perpendicular to each other. . The first and second directions X and Y are different from the third direction Z, and may be a direction perpendicular to the third direction Z. That is, based on the Cartesian coordinate system, the first, second, and third directions may respectively correspond to X-axis, Y-axis, and Z-axis directions.

Alternatively, at least one of the first, second, or third widths W1, W2, and W3 may be different from each other.

If the light emitting device 100 does not include the conductive layers 142 and 144, the first width W1 may be greater than or equal to the third width W3 as shown in Equation 2 below.

Alternatively, when the light emitting device 100 includes the conductive layers 142 and 144, the second width W2 may be greater than or equal to the third width W3 as shown in Equation 3 below.

In addition, as shown in Equation 4 below, the first width W1 may be greater than or equal to the second width W2, and the second width W2 may be greater than or equal to the third width W3.

Alternatively, as shown in Equation 5 below, the first width W may be greater than the second width W2, and the second width W2 may be greater than or equal to the third width W3.

Process margin and reliability aspects of manufacturing the light emitting device 100 when the first to third widths W1, W2, and W3 have the same relationship as in Equation 5 above Can be advantageous in

Depending on the process equipment, the first difference value obtained by subtracting W2 from W1 or the second difference value obtained by subtracting W3 from W2 may vary. Each of the first and second difference values may be greater than 0 and 40 μm or less, preferably 10 μm to 30 μm, for example, 1 μm to 2 μm.

Further, the first to third widths W1 to W3 may not be correlated with the second thickness t2 of the reflective layers 132 and 134 described above.

Meanwhile, the M connection electrodes 150-1 to 150-M serve to electrically connect the plurality of light emitting cells P1 to PN. Each of the connection electrodes 150-1 to 150-M (150-m) (where 1 ≤ m ≤ M) is the reflective layer 134 of the mth light emitting cell Pm and the m+1 light emitting cell (Pm+1) The first conductive type semiconductor layer 122 is electrically connected.

As described above, assuming that N=3, the following description is assumed assuming that M=2, and the two connection electrodes 150-1, 150-2 are the first, second, and third light emitting cells. The first and second connecting electrodes are referred to as (P1, P2, and P3) in order of connection.

Specifically, the first and second connection electrodes 150-1 adjacent to the reflective layer 134 of the first light emitting cell P1 which is one of the first and second light emitting cells P1 and P2 that are adjacent to each other The first conductive semiconductor layer 122 of the second light emitting cell P2, which is another one of the two light emitting cells P1 and P2, is electrically connected.

The second connection electrode 150-2 adjacent to the reflective layer 134 of the second light emitting cell P2 which is one of the second and third light emitting cells P2 and P3 adjacent to the second and third light emitting cells The first conductive semiconductor layer 122 of the third light emitting cell P3, which is another one of (P2, P3), is electrically connected.

Each of the first and second connection electrodes 150-1 and 150-2 is connected to the second conductivity-type semiconductor layer 126 via the reflective layer 134 and the conductive layer 144. As a result, each of the first and second connection electrodes 150-1 and 150-2 has one first conductivity type semiconductor layer 122 and another second conductivity type semiconductor layer 126 of neighboring light emitting cells. It serves to connect electrically.

If the reflective layers 132 and 134 and the conductive layers 142 and 144 are omitted in each of the first, second, and third light emitting cells P1, P2, and P3, the first and second connecting electrodes 150- 1, 150-2) Each of the neighboring light-emitting cells may electrically directly connect one of the first conductivity-type semiconductor layers 122 and the other second conductivity-type semiconductor layer 126.

In the case of the embodiment illustrated in FIGS. 1 and 2, the first and second connection electrodes 150-1 and 150-2 are the first light emitting cell P1 in which the first electrode unit 172 is located, , The first, second, and third light emitting cells P1, P2, and P3 are electrically connected in series with the third light emitting cell P3 where the second electrode unit 174 is located as an end point.

Also, the first and second connection electrodes 150-1 and 150-2 may include a material capable of ohmic contact with the first conductivity type semiconductor layer 122. For example, as an ohmic contact material, at least one of AuBe or AuZn may be included, but the embodiment is limited to the type of material included in the first and second connection electrodes 150-1 and 150-2. Does not work.

If the first and second connection electrodes 150-1 and 150-2 do not include a material that is in ohmic contact with the first conductivity type semiconductor layer 122, the first and second connection electrodes 150-1 , 150-2) A separate ohmic layer (not shown) may be disposed between each and the first conductivity type semiconductor layer 122.

Also, the first and second connection electrodes 150-1 and 150-2 may include a reflective material. Particularly, when the first insulating layers (that is, the first insulating segments) 162-1 and 162-2 described later include a material having low reflectivity, the first insulating layers 162-1 and 162-2 When the first and second connecting electrodes 150-1 and 150-2 are formed of a material having a higher reflectivity than the reflectivity, when the light emitting device 100 is applied to the light emitting device package 200 illustrated in FIG. 11, more A lot of light can be reflected in the negative (-) third direction Z toward the substrate 110.

Also, the closest first horizontal separation distance sd1 between neighboring first and second connection electrodes 150-1 and 150-2 may be 5 μm or more. Here, the first horizontal separation distance sd1 means the shortest distance in which the adjacent first and second connection electrodes 150-1 and 150-2 are spaced apart in the first direction X.

On the other hand, according to the embodiment, the first, second, and third light-emitting cells (P1, P2, P3) of each of the first conductivity type semiconductor layer 122 in the center of the width of the first direction (X) At least one electrode hole (or contact hole) to be exposed may be disposed. Hereinafter, electrode holes disposed in the first, second, and third light emitting cells P1, P2, and P3 are referred to as first, second, and third electrode holes H1, H2, and H3, respectively. That is, referring to FIG. 2, the first electrode hole H1 is disposed in the first light emitting cell P1, the second electrode hole H2 is disposed in the second light emitting cell P2, and the third light emitting cell A third electrode hole H3 may be disposed in (P3). In FIG. 1,'H' means each of the first, second, and third electrode holes H1, H2, and H3.

The first, second, and third electrode holes H1, H2, and H3 are the second conductive semiconductor layer 126 and the active layer in the first, second, and third light emitting cells P1, P2, and P3, respectively. It may be formed by exposing a part of the first conductive type semiconductor layer 122 by mesa etching the part of the 124 and the first conductive type semiconductor layer 122.

Further, each of the first, second, and third electrode holes H1, H2, and H3 may be formed in the form of a blind hole in the third direction Z.

Hereinafter, the first, second, and third electrode holes H1, H2, and H3 illustrated in FIG. 2 will be described in detail with reference to the accompanying drawings. At this time, only the second electrode hole H2 included in the second light emitting cell P2 among the first, second, and third light emitting cells P1, P2, and P3 will be described with reference to FIGS. 3A to 6, The following description may also be applied to the first and third electrode holes H1 and H3 included in the first and third light emitting cells P1 and P3, respectively.

3A is a plan view of the second light emitting cell P2 shown in FIG. 1, and FIG. 3B is a cross-sectional view of the second light emitting cell P2 shown in FIG. 3A taken along the line B-B'.

In order to focus on the arrangement and size of the second electrode hole H2 in the planar shape of the second light emitting cell P2, the illustration of the reflective layer 134 shown in FIG. 1 is omitted in FIG. 3A for convenience of explanation, The illustration of the first insulating layer 162-1, the second insulating layer 190, and the first connecting electrode 150-1 illustrated in FIG. 3B is omitted in FIG. 3A.

In addition, reference numeral '136' in FIG. 3B corresponds to reflective layers 132 and 134 illustrated in FIG. 2, and reference numeral '146' corresponds to conductive layers 142 and 144 illustrated in FIG. 2. The inside of the reference numeral '130' indicated in FIGS. 1 and 3A has a seventh width W7 to be described later corresponding to the space between the reflective layers 132 and 134.

According to an embodiment, in the second light emitting cell P2, the number and size of the second electrode holes H2, the spacing between the plurality of second electrode holes H2 when the second electrode holes H2 are plural, or At least one of the directions in which the plurality of second electrode holes H2 are arranged may be determined according to at least one of a planar shape, a planar size, or a desired current density of the second light emitting cell P2. The details are as follows.

The number of electrode holes included in the second light emitting cell P2 may be singular or plural. For example, as illustrated in FIGS. 1, 2, 3A, and 3B, the second light emitting cell P2 includes a plurality of (eg, two) 2-1 and 2-2 electrode holes. (H21, H22).

If the width of the second light emitting cell P2 in the first direction X is referred to as'horizontal width' and is indicated as'WX', the width in the second direction Y is referred to as'vertical width' and ' WY'. It can be seen that each of the 2-1 and 2-2 electrode holes H21 and H22 included in the second light emitting cell P2 is disposed at the center of the horizontal width WX of the second light emitting cell P2. have. However, according to another embodiment, each of the plurality of 2-1 and 2-2 electrode holes H21 and H22 may be disposed at the center of the vertical width WY of the second light emitting cell P2.

3A and 3B, the horizontal width WX and the vertical width WY of the second light emitting cell P2 may be expressed by Equations 6 and 7, respectively.

Referring to FIG. 3A, the 2-1 and 2-2 electrode holes H21 and H22 disposed in the center of the horizontal width WX in the second light emitting cell P2 are spaced apart from each other in the second direction Y. It may be arranged at equal intervals, but the embodiment is not limited thereto. According to another embodiment, the 2-1 and 2-2 electrode holes H21 and H22 may be spaced apart from each other in at least one of the first or second directions (X and Y) and disposed at equal intervals. .

As illustrated in FIG. 3A, when the 2-1 and 2-2 electrode holes H21 and H22 are disposed in the center of the horizontal axis WX, the plane of the second light emitting cell P2 is 2-1 and The second and second electrode holes H21 and H22 may be divided into first and second regions A1 and A2 in the first direction X. In addition, as illustrated in FIG. 3B, when the second and second electrode holes H21 and H22 are spaced apart from each other in the second direction Y, the cross-section of the light emitting cell P2 is second. The first, second, and second second electrode holes H21 and H22 may be divided into third, fourth, and fifth regions A3, A4, and A5 in the second direction Y.

Since the 2-1 and 2-2 electrode holes H21 and H22 are disposed in the center of the horizontal width WX in the second light emitting cell P2, the 2-1 and 2-2 electrode holes H21, The fourth width W4 in the first direction X of the first area A1 located on the left side of H22) and the second located on the right side of the 2-1 and 2-2 electrode holes H21 and H22. The fifth width W5 in the first direction X of the region A2 may be the same.

As described above, the reason for arranging the 2-1 and 2-2 electrode holes H21 and H22 in the center of the horizontal width WX of the second light emitting cell P2 is 2 nd. The carrier (eg, electron) supplied to the first conductive semiconductor layer 122 by the first connection electrode 150-1 through the electrode hole H2 is a light emitting structure 120 in the first region A1 ) And to spread uniformly to the light emitting structure 120 of the second region A2. Although not shown, according to another embodiment, for the same reason, the 2-1 and 2-2 electrode holes H21 and H22 may be arranged in the center of the vertical width WY of the second light emitting cell P2. have.

Hereinafter, the shortest separation distance between the second electrode holes adjacent to each other in the second light emitting cell P2 is referred to as a'first distance'. For example, the shortest separation distance d11 between the 2-1 and 2-2 electrode holes H21 and H22 that are closest to each other in the second light emitting cell P2 may correspond to the first distance. In the case of FIG. 3A, the first distance d11 is illustrated as the shortest separation distance between the boundary of the neighboring 2-1 electrode hole H21 and the boundary of the 2-2 electrode hole H22. However, as illustrated in FIG. 3A, the first distance d11 may correspond to a separation distance between the center of the 2-1 electrode hole H21 and the center of the 2-2 electrode hole H22.

In addition, the shortest distance between the edge ET and ES of the second light emitting cell P2 and any one of the electrode holes H21 and H22 of the 2-1 and 2-2 is defined as a'second distance'. .

As illustrated in FIGS. 3A and 3B, the second light emitting cells P2 having a quadrangular planar shape are mutually opposite to each other in two directions (ES) and second directions (Y) facing each other in the first direction (X). It has two opposite edges (ET).

For example, the shortest distances d12 and d13 between the edges ES and ET of the second light emitting cell P2 and the second and second electrode holes H21 and H22 correspond to the second distance. can do. 3A and 3B, the second distance d12 is shown as the shortest distance between the edge ET and the boundary of the 2-1 electrode hole H21. However, unlike in FIGS. 3A and 3B, the second distance d12 may correspond to the shortest distance between the edge ET and the center of the 2-1 electrode hole H21. Similarly, the second distance d13 is shown as being the shortest distance between the edge of the edge ET and the second-2 electrode hole H22, but the edge ET and the second-2 electrode hole H22 ) May correspond to the shortest distance between the centers.

In addition, depending on the size and shape of the second light emitting cell P2, in the first direction X between the edge ES and the 2-1 or 2-2 electrode holes H21 and H22 The fourth distance W4 or the fifth width W5, which is the shortest separation distance, may be the second distance.

The fourth width W4 or the fifth width W5 may be different from the second distances d12 and d13.

Further, the second distances d12 and d13 may be the same or different from each other.

Further, each of the second distances d12 and d13 may be greater than half of the first distance d11, and half of the first distance d11 may correspond to each of the second distances d12 and d13.

If half of the first distance d11 corresponds to each of the second distances d12 and d13, a carrier (eg, a third area A3), a fourth area (A4), and a fifth area (A5) is provided. For example, the former) can be spread uniformly. That is, referring to FIG. 3B, a carrier is supplied from the first connection electrode 150-1 connected to the first conductivity type semiconductor layer 122 through the 2-2 electrode hole H22 to the third region A3. The carrier is supplied in the same amount to the left side of the fourth region A4 as much as the amount. In addition, the fourth region is equal to the amount of carrier being supplied from the first connecting electrode 150-1 connected to the first conductive semiconductor layer 122 through the 2-1 electrode hole H21 to the fifth region A5. The carrier is also supplied in the same amount to the right side of (A4). Therefore, when half of the first distance d11 corresponds to the second distances d12 and d13, spreading of the carrier may be uniform.

As a result, when the 2-1 and 2-2 electrode holes H21 and H22 are disposed as described above in the second direction Y in the center of the horizontal axis WX, as illustrated in FIG. 3A, The current spreading ranges HS1 and HS2 centered on the 2-1 and 2-2 electrode holes H21 and H22 may be uniform.

In addition, depending on the planar shape, planar size, or desired current density of the second light emitting cell P2, the second electrode holes H2 may be more or less than two, and may be arranged in various shapes. Looking at this, it is as follows.

4A to 4H are plan views of second light emitting cells P2 according to other embodiments. In each drawing, for convenience of description, only the second electrode hole is indicated by a solid line, and a connection having a separation space 130 and an eighth width W8 having a seventh width W7 between the reflective layers 132 and 134 is provided. The illustration of the electrode is omitted. In addition, the part indicated by the dotted line in each of FIGS. 4A to 4H represents the current spreading range.

As the number of second electrode holes increases in the same planar area of the second light emitting cell P2, the plane size of the second electrode holes may decrease. Referring to FIG. 4A, the second light emitting cell P2 may include three 2-1, 2-2, and 2-3 electrode holes H21, H22, and H23. If the plane size (horizontal width x vertical width) of the second light emitting cell P2 shown in FIG. 3A and the second light emitting cell P2 shown in FIG. 4A are equal to each other, the second electrode shown in FIG. 4A The sizes of the holes H21, H22 and H23 may be smaller than the sizes of the second electrode holes H21 and H22 shown in FIG. 3A.

In addition, as in the second light emitting cell P2 illustrated in FIG. 3A, the second light emitting cell P2 illustrated in FIG. 4A is provided with 2-1, 2-2, and 2-3 electrode holes H21, H22 and H23 may be disposed at the center of the horizontal width WX. Therefore, the fourth width W4 and the fifth width W5 may be the same.

Further, the first distances of the 2-1, 2-2, and 2-3 electrode holes H21, H22, and H23 may be equally spaced. That is, the first distance d22 of the 2-1 and 2-2 electrode holes H21 and H22 and the first distance d23 of the 2-2 and 2-3 electrode holes H22 and H23 are It can be the same. However, according to another embodiment, d22 and d23 may be substantially the same.

Further, half of the first distance d22 may correspond to the second distance d21, and half of the first distance d23 may correspond to the second distance d24. Also, the second distances d21 and d24 may be the same or different from each other. Also, the second distances d21 and 24 may be different from the fourth width W4 or the fifth width W5.

As illustrated in FIG. 4A, the second-first, second-second, and second-third electrode holes H21, H22, and H23 are disposed at the center of the horizontal width WX, and the first distance d22, When half of d23) corresponds to the second distances d21 and d24, a carrier (for example, electrons) may be uniformly spread and supplied to the light emitting structure 120. Accordingly, it can be seen that the current spreading ranges HS1, HS2, and HS3 centering on the 2-1, 2-2, and 2-3 electrode holes H21, H22, and H23 become uniform.

According to another embodiment, as illustrated in FIGS. 4B to 4D and 4F to 4H, the second light emitting cell P2 is a second electrode hole arranged in plural in the first direction as well as in the second direction. It may include.

In the second light emitting cell P2 illustrated in FIGS. 4B to 4D and FIGS. 4F to 4H, the first being the shortest separation distance in the first and second directions (X, Y) between the plurality of second electrode holes The distances are the same.

In addition, in the second light emitting cell P2 illustrated in FIGS. 4B to 4D and 4F to 4H, the second distance, which is the shortest distance between the edges ES and ST, and the second electrode hole is half of the first distance. Can be

In addition, the planar shape of the second light emitting cell P2 illustrated in FIGS. 1, 3A and 4A to 4D is rectangular, while the flat shape of the second light emitting cell P2 illustrated in FIGS. 4E to 4H is It is square. Accordingly, the second electrode holes in the second light emitting cell P2 illustrated in FIGS. 1, 3A, and 4A to 4D may be disposed at the center of the horizontal width, but the second light emission illustrated in FIGS. 4E to 4H The second electrode holes in the cell P2 may be disposed at the centers of the horizontal width and the vertical width.

In the second light emitting cell P2 illustrated in FIGS. 4B to 4H, the relationship between the first distance, the second distance, the third distance, the fourth width, the fifth width, and the sixth width is exemplarily described as follows. . However, the embodiment is not limited thereto, and if the current spreading can be uniform and dense, the first to third distances and fourth to sixth widths may be variously set. Here, the'third distance' refers to a distance excluding the second distance among the distances between the edges ET and ES of the second light emitting cell P2 and the plurality of second electrode holes.

First, the first distance (d31, d34), the second distance (fourth width (W41), fifth width (W51)), and the third distance (d32) in the second light emitting cell (P2) illustrated in Figure 4b d33) may be expressed by Equation 8 below, but the embodiment is not limited thereto.

In addition, the first distance (d41, d42, d43) and the second distance (fourth width (W42), fifth width (W52), d44, d45) in the second light emitting cell (P2) illustrated in Figure 4c is Although it may be expressed as Equation (9), the embodiment is not limited thereto.

In addition, the first distance (d51, d52, d53), the second distance (fourth width (W43), fifth width (W53)), and the third distance in the second light emitting cell (P2) illustrated in Figure 4d ( d54 and d55) may be expressed as in Equation 10 below, but the embodiment is not limited thereto.

If the planar area of the second light emitting cell P2 illustrated in FIGS. 4B to 4D is the same, and the second electrode hole is disposed as illustrated in FIG. 4C, the second electrode hole may be disposed as illustrated in FIG. 4B or 4D. It can be seen that current spreading is more dense and uniform than when two electrode holes are arranged.

Examples of the sixth width illustrated in FIGS. 4B to 4D, respectively, when the planar area of the second light emitting cell P2 illustrated in FIGS. 4B to 4D and the second light emitting cell P2 illustrated in FIG. 4A are the same. For example, the sixth width W61 illustrated in FIG. 4B may be smaller than the sixth width W6 illustrated in FIG. 4A.

In addition, the second distance (fourth width (W44), fifth width (W54), d61, d62) in the second light emitting cell P2 illustrated in FIG. 4E may be expressed as Equation 11 below, Examples are not limited to this.

According to Equation 11, it can be seen that the second electrode hole is disposed in the center of the horizontal width WX and the center of the vertical width WY in the second light emitting cell P2 illustrated in FIG. 4E.

In addition, the first distance (d71, d74) and the second distance (fourth width (W45), fifth width (W55), d71, d73) in the second light emitting cell (P2) illustrated in Figure 4f is the following equation 12, but the embodiment is not limited thereto.

In addition, the first distance (d85, d86, d87, d88) and the second distance (fourth width (W46), fifth width (W56), d82, d83) in the second light emitting cell (P2) illustrated in Figure 4g May be expressed as in Equation 13 below, but the embodiment is not limited thereto.

The second light emitting cell P2 illustrated in FIG. 4G has a planar shape further including a second electrode hole positioned at the center of the second light emitting cell P2 shown in FIG. 4F. As in Equation 13 above, the first distances d85, d86, d87, and d88, which are the shortest separation distances between the four second electrode holes disposed close to the four corners and the second electrode hole located in the center, are the same. .

Also, the shortest distances d81 and d84 between the four second electrode holes except for the second electrode hole located at the center may be the same. Here, the first distance d85 may be half of d81.

4G, each of the first distances d85, d86, d87, and d88 may be the same as the second distance (fourth width W46, fifth width W56, d82, d83).

In addition, the first distance (d96, d97, d98, d99) and the second distance (fourth width (W47), fifth width (W57), d93, d94) in the second light emitting cell (P2) illustrated in Figure 4h] May be expressed as in Equation 14 below, but the embodiment is not limited thereto.

If the planar areas of the second light emitting cells P2 shown in FIGS. 4E to 4H are the same, the sixth width W62 of the second electrode hole shown in FIG. 4E is the second shown in FIGS. 4F to 4H. It may be larger than the sixth width of the electrode hole (for example, W63 shown in FIG. 4F).

5 is a plan view of a second light emitting cell P2 according to another embodiment, and FIG. 6 is a plan view of a second light emitting cell P2 according to another embodiment. 5 and 6, the solid line represents the second electrode hole, and the dotted line represents the current spreading range.

As described above, the planar shape of the second light emitting cell P2 may be rectangular or square, but the embodiment is not limited thereto. According to another embodiment, the planar shape of the second light emitting cell P2 may have a polygonal shape or a circular shape other than a square shape.

That is, as illustrated in FIGS. 1, 3A, 4A to 4D, the planar shape of the second light emitting cell P2 may have a rectangular shape, and the second light emitting cell (as illustrated in FIGS. 4E to 4H) The planar shape of P2) may be square.

Alternatively, as illustrated in FIG. 5, the planar shape of the second light emitting cell P2 may be a regular hexagon. In the second light emitting cell P2 illustrated in FIG. 5, the first distances d101, d102, d103, d104, d105, d107, d108 and the second distance d106 may be expressed as in Equation 15 below. The embodiment is not limited to this.

Alternatively, as illustrated in FIG. 6, the planar shape of the second light emitting cell P2 may be an equilateral triangle. In this case, the first distances d111 and d112, which are the shortest separation distances between the second electrode holes spaced in the first and fourth directions, are the same.

The planar shape of the second light emitting cell P2 is a square as illustrated in FIGS. 4E to 4H, or a cube as illustrated in FIG. 5 than when it is rectangular as illustrated in FIGS. 3A and 4A to 4D, As illustrated in FIG. 6, in the case of an equilateral triangle, a current spreading range indicated by a dotted line in each figure may be densely and uniformly formed. As such, when the current diffusion range is dense and uniform, since the area utilization rate of the second light emitting cell P2 is increased, it is possible to maximize improvement of light extraction efficiency in a limited area.

Also, the first distance may be determined according to the current density of the light emitting device 100. For example, it may be determined by increasing the first distance as the desired current density of the light emitting device 100 is lower, and decreasing the first distance as the desired current density is higher.

Further, the seventh width, which is the separation distance in the first direction X between the sixth width W6 of the second electrode hole H2 etched in the first direction X in the first direction X, and the reflective layers 132 and 134 The width W7 and the eighth width W8 in the first direction X of the first connection electrode 150-1 disposed in the second electrode hole H2 are the manufacturing process margin of the semiconductor device 100 It can be determined considering.

Further, as described above, the second electrode hole illustrated in FIGS. 1, 3A, and 4A to 4H has a circular planar shape, but the embodiment is not limited thereto. According to another embodiment, the second electrode hole may have various planar shapes.

Meanwhile, referring to FIG. 2 again, the first insulating layer includes first insulating segments 162-1 and 162-2, second insulating segments 164, third insulating segments 166-1 and 166-2, and The fourth insulating segments 168-1 and 168-2 may be included.

The first insulation segment includes a 1-1 insulation segment 162-1 and a 1-2 insulation segment 162-2.

The first-first insulating segment 162-1 is between neighboring first and second light-emitting cells P1 and P2 connected by the first connection electrode 150-1 and the first connection electrode 150-1. Is placed. For example, referring to FIG. 2, the 1-1 insulating segment 162-1 is the reflective layer 134 exposed in the first light emitting cell P1 without being connected by the first connecting electrode 150-1. Between the top and side surfaces of each and the first connection electrode 150-1, each of the top and side surfaces of the conductive layer 144 exposed when the third width W3 is smaller than the second width W2, It is disposed between the first connection electrode 150-1 and between the first and second connection electrodes 150-1 and the top and side surfaces of the light emitting structure 120.

In addition, the 1-1 insulating segment 162-1 is also disposed between the substrate 110 and the first connecting electrode 150-1.

In addition, the first-first insulating segment 162-1 has a third width W3 between each of the upper and side surfaces of the reflective layer 132 and the first connection electrode 150-1 in the second light emitting cell P2. Each of the upper and side surfaces of the conductive layer 142 exposed when the width is smaller than the second width W2 and the first connection electrode 150-1, respectively, the upper and side surfaces of the light emitting structure 120 and the It is disposed between one connection electrode 150-1.

Accordingly, the first-first insulating segment 162-1 may electrically insulate the adjacent first and second light-emitting cells P1 and P2 and the first connection electrode 150-1 from each other.

Similarly, the first and second insulating segments 162-2 are adjacent second and third light emitting cells P2 and P3 connected by the second connection electrode 150-1 and the second connection electrode 150-2. ). Accordingly, the 1-2 insulation segments 162-2 may electrically insulate the adjacent second and third light emitting cells P2 and P3 and the second connection electrode 150-2 from each other.

Also, the second insulating segment 164 may include a second light emitting cell in which the first and second electrode parts 172 and 174 of the first, second, and third light emitting cells P1, P2, and P3 are not disposed ( At P2), it is disposed between neighboring first and second connecting electrodes 150-1 and 150-2. That is, the second insulating segment 164 serves to electrically insulate the adjacent first and second connecting electrodes 150-1 and 150-2 from each other.

In the light emitting cell P2, the first connection electrode 150-1 penetrates through the first-first insulating segment 162-1 and the second insulating segment 164 embedded in the second electrode hole H2. 1 has a form electrically connected to the conductive semiconductor layer 122. As described above, the first-first insulating segment 162-1 and the second insulating segment 164 are buried in the second electrode hole H2 and mesa-etched the first connecting electrode 150-1. ) And electrically insulates them.

Also, the third insulating segment 166-2 includes a 3-1 insulating segment 166-1 and a 3-2 insulating segment 166-2.

The 3-1 insulating segment 166-1 may be omitted as a part formed in the process as described later. The 3-2 insulating segment 166-2 is the first light emitting cell P1 in which the first electrode part 172 is disposed among the first, second, and third light emitting cells P1, P2, and P3, It is disposed between the first electrode part 172 and the first connection electrode 150-1.

In addition, as illustrated in FIG. 2, the light emitting device 100 may further include a metal electrode 180. The metal electrode 180 penetrates through the third insulating segments 166-1 and 166-2 and is disposed between the first electrode part 172 and the first conductivity-type semiconductor layer 122, and the first electrode hole ( The first electrode part 172 is electrically connected to the first conductivity type semiconductor layer 122 via H1). The closest second horizontal separation distance sd2 between the metal electrode 180 and the first connection electrode 150-1 may be 5 μm or more. In addition, the constituent materials of the metal electrode 180 and the constituent materials of the first and second connection electrodes 150-1 and 150-2 may be the same or different from each other.

When the light emitting device 100 includes the metal electrode 180, the 3-2 insulating segment 166-2 is the first electrode among the first, second, and third light emitting cells P1, P2, and P3. In the first light emitting cell P1 in which the portion 172 is disposed, they are disposed between the metal electrode 180 and the first connection electrode 150-1 in the first direction X, and these 180, 150-1 ) Is electrically insulated.

In addition, the 3-1 and 3-2 insulating segments 166-1 and 166-2 include the light emitting structure 120, the reflective layers 132 and 134 exposed when the first electrode hole H1 is formed, and It is disposed between each of the conductive layers 142 and 144 and the metal electrode 180 (or the first electrode part 172 when the metal electrode 180 is omitted). Accordingly, in the first light emitting cell P1, the 3-1 and 3-2 insulating segments 166-1 and 166-2 include the light emitting structure 120, the reflective layers 132 and 134, and the conductive layer 142, 144) Each of the metal electrode 180 (or, if the metal electrode 180 is omitted, the first electrode part 172) may be electrically insulated.

Further, the fourth insulating segment includes a 4-1 insulating segment 168-1 and a 4-2 insulating segment 168-2. The 4-1 insulating segment 168-1 may be omitted as a part formed in the process as described below.

The 4-2 insulating segment 168-2 is the third light emitting cell P3 in which the second electrode part 174 is disposed among the first, second, and third light emitting cells P1, P2, and P3. It is disposed between the second electrode unit 174 and the second connection electrode 150-2, and serves to electrically insulate these 174 and 150-2 from each other.

In addition, the 4-2 insulating segment 168-2 of each of the reflective layer 134, the conductive layer 144 and the light emitting structure 120 of the third light emitting cell P3 and the second connection electrode 150-2 Is placed between. Therefore, in the third light emitting cell P3, each of the light emitting structures 120, the reflective layers 132, 134, and the conductive layers 142, 144 exposed at the time of formation of the third electrode hole H3 is first to second. The second connecting electrode 150-2 may be electrically insulated by the insulating segment 162-2 and the 4-2 insulating segment 168-2.

The second connection electrode 150-2 penetrates through the first-2 insulating segment 162-2 and the fourth-2 insulating segment 168-2 buried in the third electrode hole H3 to form a first conductivity type. It has a form connected to the semiconductor layer 122.

Meanwhile, the second insulating layer 190 is on the first and second connection electrodes 150-1 and 150-2, on the second insulating segment 164, and on the third insulating segment 166-1 and 166-2. Above and above the fourth insulating segments 168-1 and 168-2, respectively. Referring to FIG. 1, the second insulating layer 190 is not disposed inside the regions 192 and 194.

The second insulating layer 190 may serve as the 4-1 insulating segment 168-1 of the third light emitting cell P3. That is, the 4-1 insulating segment 168-1 may be omitted and replaced with the second insulating layer 190.

The thicker the third thickness t3 of the second insulating layer 190, the better the ability to withstand the impact during die bonding. The third thickness t3 of the second insulating layer 190 may be at least 1 nm to 80 nm, for example, 1 μm.

Each of the first insulating layers 162-1, 162-2, 164, 166-1, 166-2, 168-1, and 168-2 and the second insulating layer 190 may include a material having electrical insulating properties. Can be, the less the light transmittance and light absorption, the more advantageous. Because, when the light emitting device 100 illustrated in FIGS. 1 and 2 is implemented as a flip chip type light emitting device package 200 as illustrated in FIG. 11, a lot of light can be emitted toward the substrate 110 It is for sake.

Each of the first insulating layers 162-1, 162-2, 164, 166-1, 166-2, 168-1, and 168-2 and the second insulating layer 190 may be made of the same material or different from each other. It may be made of a material.

Each of the first insulating layers 162-1, 162-2, 164, 166-1, 166-2, 168-1, and 168-2 and the second insulating layer 190 are Al ₂ O ₃ , SiO ₂ , Si It may be formed of at least one of ₃ N ₄ , TiO ₂ , or AlN, and may be a single layer or multiple layers.

In addition, when the light emitting device 100 illustrated in FIGS. 1 and 2 is applied to the light emitting device package 200 as illustrated in FIG. 11, the first insulating layers 162-1, 162-2, 164, and 166- 1, 166-2, 168-1, 168-2) or at least one of the second insulating layers 190 may include a distributed Bragg Reflector (DBR). In this case, the distributed Bragg reflective layer may perform an insulation function or a reflection function.

When the first insulating layer (162-1, 162-2, 164, 166-1, 166-2, 168-1, 168-2) is implemented as a first dispersion Bragg reflective layer, the first distributed Bragg reflective layer is the first , It is possible to reflect the light incident from the second and third light emitting cells (P1, P2, P3) to proceed toward the substrate (110). Therefore, in the first dispersion Bragg reflective layer, the light incident from the first, second, and third light emitting cells P1, P2, and P3 includes the second insulating layer 190 and the first and second connecting electrodes 150-1, Since it is prevented from being absorbed by 150-2), luminous efficiency can be improved.

In addition, when the second insulating layer 190 is implemented as a second dispersed Bragg reflective layer, the second dispersed Bragg reflective layer reflects light incident from the first, second, and third light emitting cells P1, P2, and P3. Order. Therefore, the second dispersion Bragg reflective layer blocks light incident from the first, second, and third light emitting cells P1, P2, and P3 from being absorbed by the first and second electrode parts 172 and 174. , The luminous efficiency can be improved.

Each of the first and second dispersion Bragg reflective layers may have a structure in which the first layer and the second layer having different refractive indices are alternately stacked at least once or more. Each of the first and second dispersion Bragg reflective layers may be an electrically insulating material.

For example, the first layer may be a first dielectric layer such as TiO _2, and the second layer may include a second dielectric layer such as SiO ₂ . For example, the first dispersion Bragg reflective layer may have a structure in which a TiO ₂ /SiO ₂ layer is stacked at least once. The thickness of each of the first layer and the second layer is λ/4, and λ may be a wavelength of light generated in the light emitting cell.

If the second insulating layer 190 is implemented as a DBR, the reflective layers 132 and 134 may be omitted, or only the first layer serving as the multi-layered reflective layers 132 and 134 may be omitted, and the first insulating layer (162-1, 162-2, 164, 166-1, 166-2, 168-1, 168-2) need not be implemented with DBR.

Meanwhile, the first electrode part 172 is connected to the first conductive semiconductor layer 122 of any one of the first, second, and third light emitting cells P1, P2, and P3, and the second electrode part ( 174) is connected to the other of the first, second, and third light emitting cells (P1, P2, P3) of the other reflective layer (or the second conductive semiconductor layer if the reflective layer and the conductive layer is omitted). That is, the second electrode unit 174 is electrically connected to the second conductive type semiconductor layer 126 via the reflective layer 134 and the conductive layer 144.

1 and 2, for example, the first electrode part 172 may be disposed in the first light emitting cell P1 to be connected to the first conductive semiconductor layer 122, and the second electrode part ( 174 may be disposed on the third light emitting cell P3 to be connected to the reflective layer 134 (if the reflective layer 134 and the conductive layer 144 are omitted, the second conductive semiconductor layer 126).

When the light emitting device 100 further includes a metal electrode 180, the first electrode part 172 passes through the second insulating layer 190 and then passes through the metal electrode 180 to form a first conductivity type semiconductor. It may also be connected to layer 122.

However, when the metal electrode 180 illustrated in FIG. 2 is omitted and the first electrode unit 172 is disposed in place of the metal electrode 180, the first, second, and third light emitting cells P1 and P2 , P3) in the first light emitting cell P1 in which the first electrode part 172 is disposed, the first electrode part 172 includes a second insulating layer 190 and a third insulating segment 166-1, 166- 2) is electrically connected to the first conductive semiconductor layer 122 in a shape that penetrates. That is, the first electrode part 172 penetrates through the second insulating layer 190 and then penetrates through the third insulating segments 166-1 and 166-2 embedded in the first electrode hole H1. It is connected to one conductive semiconductor layer 122. The first electrode part 172 in the first electrode hole H1 has an eighth width W8.

As described above, when the light emitting device 100 does not include the metal electrode 180, the first electrode unit 172 includes the second insulating layer 190 and the third insulating segments 166-1 and 166-2. Since all of them must be penetrated, the manufacturing process may be difficult due to the large aspect ratio. However, when the metal electrode 180 is disposed between the first electrode portion 172 and the first conductivity-type semiconductor layer 122, the external ratio becomes small, so that the manufacturing process can be facilitated.

The second electrode unit 174 has a shape that penetrates through the second insulating layer 190 and the fourth insulating segments 168-1 and 168-2, or the reflective layer 134 (or the reflective layer 134 and the conductive layer 144). ) Is omitted, the second conductivity type semiconductor layer 126] is electrically connected.

External power may be supplied to the light emitting device 100 through the first and second electrode parts 172 and 174. The first and second electrode parts 172 and 174 may include pads to which wires (not shown) to which external power is supplied are bonded, or may act as pads themselves.

In addition, each of the first and second electrode parts 172 and 174 may perform a die bonding function without die paste when applying an euttic bonding material.

1 and 2, the first electrode part 172 is located in the first light emitting cell P1 in the light emitting device 100, and the second electrode part 174 is last in the light emitting device 100 Although it may be located in the light emitting cell PN (eg, P3), the embodiment is not limited to the arrangement positions of the first and second electrode parts 172 and 174.

In addition, referring to FIG. 1, the planar shape of the first electrode portion 172 is a quadrangular shape, while the planar shape of the second electrode portion 174 is a quadrangular shape in which the right portion has a recess 174A. As such, when the first and second electrode parts 172 and 174 have different plane shapes, the first and second electrode parts 172 and 174 can be easily distinguished.

Each of the above-described first and second connection electrodes 150-1 and 150-2, the first and second electrode parts 172 and 174, and the metal electrode 180 each has a metal material having electrical conductivity, for example, Pt (Platinum), Ge(Germanium), Cu(Copper), Cr(Chromium), Ni(Nickel), Au(Gold), Ti(Titanium), Al(Aluminum), Ta(Tantalum), TaN(Tantalum Nitride), It may include at least one material of TiN (Titanium Nitride), Pd (Palladium), W (tungsten) or WSi ₂ (Tungstem silicide). In particular, the first and second connection electrodes 150-1 and 150-2 have thicker thicknesses, include materials having excellent conductivity, and the first and second insulating layers 162-1 and 162-2. 164, 166-1, 166-2, 168-1, 168-2, 190) and a material having excellent adhesion is preferred.

On the other hand, when the light emitting device 100 illustrated in FIGS. 1 and 2 described above is implemented in a package in the form of a flip chip as illustrated in FIG. 11 to be described later, the first and the first on the second insulating layer 190 A heat dissipation unit 176 may be further disposed between the two electrode units 172 and 174. The heat dissipation unit 176 may include the same metal material as the first and second electrode units 172 and 174. When the heat dissipation unit 176 is disposed as described above, heat generated in each of the light emitting cells P1, P2, and P3 of the light emitting device 100 may be dissipated more quickly.

7 shows a circuit diagram of the light emitting device 100 shown in FIGS. 1 and 2.

1, 2 and 7, the light emitting device 100 has one (-) terminal (or a first electrode part or a first pad) 172, and one (+) terminal (or , A second electrode part or a second pad) 174. External driving voltages may be supplied through the first and second electrode units 172 and 174 to drive the first, second, and third light emitting cells P1, P2, and P3.

In order to help understanding of the embodiment, the light emitting device 100 is described as having three (N=3) light emitting cells P1, P2, and P3 and two connecting electrodes 150-1 and 150-2. Did. However, even when the light emitting device 100 has more or less than 3 light emitting cells and more than 2 or more connecting electrodes, the above description can be applied.

For example, when the light emitting device 100 includes more than three N light emitting cells, two light emitting cells among the N light emitting cells are the first and third light emitting shown in FIGS. 1, 2 and 7 Cells P1 and P3, respectively, and the remaining N-2 light emitting cells may correspond to the second light emitting cells P2 shown in FIGS. 1, 2, and 7.

Hereinafter, a plan view of various embodiments of a light emitting device 100 including a plurality of (N>3) light emitting cells each having various planar shapes will be described with reference to the accompanying drawings.

8A to 8C are plan views of light emitting devices according to embodiments.

Referring to FIG. 8A, the light emitting element has nine (N=9) square planar light emitting cells P. Each of the plurality of light emitting cells P may correspond to the light emitting cells illustrated in FIGS. 1, 3A, and 4A to 4H.

Referring to FIG. 8B, the light emitting element has 16 (N=16) triangular planar light emitting cells P. Each of the plurality of light emitting cells P may correspond to a light emitting cell having an equilateral triangle plane shape illustrated in FIG. 6.

Referring to FIG. 8C, the light emitting element has 11 (N=11) hexagonal planar light emitting cells P. Each of the plurality of light emitting cells P may correspond to a light emitting cell having a regular hexagonal planar shape illustrated in FIG. 5.

In each of FIGS. 8A to 8C, M connecting electrodes (not shown) connect each light emitting cell P so that current flows in the direction of the arrow CP, as described above with reference to FIGS. 1 and 2. . That is, each of the M connection electrodes may have the same cross-section and planar shape as the first and second connection electrodes 150-1 and 150-2 shown in FIGS. 1 and 2.

9 shows local sectional views of light emitting devices according to comparative examples, respectively.

The light emitting device of the comparative example shown in FIG. 9 includes a substrate 10, three light emitting cells P1, P2, and P3, insulating layers 42 and 44, and connection electrodes 50-1 and 50-2.

Each light emitting cell P1, P2, P3 has a light emitting structure 20, first and second electrode parts 32, 34. The light emitting structure 20 includes a first conductivity type semiconductor layer 22, an active layer 24 and a second conductivity type semiconductor layer 26.

In FIG. 9, the second electrode part 34 of the first light emitting cell P1 and the first electrode part 32 of the second light emitting cell P2 are electrically connected to each other by the first connection electrode 50-1. Connected, the second electrode portion 34 of the second light emitting cell P2 and the first electrode portion 32 of the third light emitting cell P3 are electrically connected to each other by the second connection electrode 50-2. do.

At this time, the insulating layer 42 is disposed between the neighboring light emitting cells P1 and P2 and the first connection electrode 50-1, and the insulating layer 44 is adjacent to the neighboring light emitting cells P2 and P3. It is disposed between the connecting electrodes 50-2. The insulating layer 42 serves to electrically insulate the adjacent light emitting cells P1 and P2 and the first connection electrode 50-1 from each other, and the insulating layer 44 serves as the adjacent light emitting cells P2 and P3. And the second connection electrode 50-2 to electrically insulate each other.

Electrons are supplied to the active layer 24 via the first electrode type 32 through the first conductivity type semiconductor layer 22, and the second conductivity type semiconductor layer 26 is supplied through the second electrode part 34. Holes may be supplied to the active layer 24 via via. However, electrons supplied through the first electrode part 32 move more in the shortest course leading from the first electrode part 32 to the active layer 24 due to the high resistance of the first conductivity type semiconductor layer 22. Tend to Such carrier non-uniform spreading may reduce internal quantum efficiency and cause local heating in the light emitting cell, thereby deteriorating reliability of the light emitting device.

However, in the case of the light emitting device 100 according to the embodiment illustrated in FIG. 2, the first, second, and third light emitting cells P1, P2, and P3 have a first, centered width of each horizontal width WX, The second and third electrode holes H1, H2, and H3 are formed, respectively, and the first and second connection electrodes 150- through the first, second, and third electrode holes H1, H2, and H3 are formed. 1, 150-2) are connected to the first conductivity type semiconductor layer 122. Therefore, unlike the light emitting device according to the comparative example illustrated in FIG. 9, in the case of the light emitting device 100 according to the embodiment illustrated in FIG. 2, the first and second connection electrodes 150-1 and 150-2 are used. The electrons supplied through may be uniformly spread to the active layers 124 located on the left and right sides based on the first, second, and third electrode holes H1, H2, and H3. Therefore, when compared with the comparative example illustrated in FIG. 9, in the case of the light emitting device 100 according to the embodiment illustrated in FIGS. 1 and 2, internal quantum efficiency is improved and local heating of the light emitting device 100 is prevented, Reliability can be maximized.

In addition, in the case of the light emitting device according to the comparative example shown in FIG. 9, the first and second connection electrodes 50-1 and 50-2 must be spaced apart from each other by a certain distance (dc). Otherwise, the first and second connection electrodes 50-1 and 50-2 are electrically shorted to each other, which may cause malfunction of the light emitting device.

However, in the case of the light emitting device 100 according to the embodiment illustrated in FIGS. 1 and 2, the first and second formed in the center of each of the first, second, and third light emitting cells P1, P2, and P3 , And the first and second connection electrodes 150-1 and 150-2 connected to the first conductivity type semiconductor layer 122 through the third electrode holes H1, H2 and H3, the second insulating segment 164 Are electrically isolated from each other. Accordingly, the first horizontal separation distance sd1 in the first direction X illustrated in FIG. 2 may be much smaller than the horizontal separation distance dc of the comparative example illustrated in FIG. 9. Therefore, the area allocated for the light emitting device 100 can be efficiently used, so that the entire width of the light emitting device 100 in the horizontal direction of the first direction X can be reduced.

Hereinafter, a method of manufacturing the light emitting device 100 illustrated in FIGS. 1 and 2 will be described with reference to the attached FIGS. 10A to 10G, but the light emitting device 100 is not limited to such a manufacturing method and is also manufactured by other manufacturing methods. Of course, it can be manufactured.

10A to 10G are process cross-sectional views illustrating a method of manufacturing the light emitting device 100 illustrated in FIGS. 1 and 2.

Referring to FIG. 10A, an uneven pattern 112 is formed on the substrate 100. That is, PSS is formed. Thereafter, the light emitting structure 120, the conductive layer 140, and the reflective layer 130A are sequentially formed on the substrate PSS having the uneven pattern 112.

Thereafter, referring to FIG. 10B, a first pattern mask M1 is formed on the reflective layer 130A. The first pattern mask M1 has an opening that opens a boundary region S illustrated in FIG. 2 and a portion where the first, second, and third electrode holes H1, H2, and H3 are to be formed.

Thereafter, referring to FIG. 10C, the reflective layer 130A, the conductive layer 140, and the light emitting structure 120 are formed using the first pattern mask M1 until the first conductive semiconductor layer 122 is exposed. The first, second, and third electrode holes H1, H2, and H3 are sequentially etched to form the first conductive semiconductor layer until the substrate 110 of the boundary region S is exposed. Etch (122). At this time, the widths of the openings of the first pattern mask M1 may be adjusted such that the sixth widths W6 of the first, second, and third electrode holes H1, H2, and H3 are formed as desired. In addition, the first to third widths W1, W2, and W3 have the values described in Equations 1 to 5 described above, and materials having different etching selectivity in order to secure the seventh width W7 to a desired degree The reflective layer 130A, the conductive layer 140, and the second conductive semiconductor layer 126 may be implemented. Thereafter, the first pattern mask M1 is removed.

Alternatively, the first, second, and third electrode holes H1, H2, and H3 are primarily formed as described above using the first pattern mask M1, and then the first pattern mask M1 is removed. And a separate pattern mask (not shown) having openings that cover the first, second, and third electrode holes H1, H2, and H3 and expose the portion where the boundary region S is to be formed, as an etching mask. By doing so, the first conductivity type semiconductor layer 122 may be etched until the substrate 110 of the boundary region S is exposed.

Thereafter, referring to FIG. 10D, the first insulating layer 160 is formed on the resultant illustrated in FIG. 10C. Thereafter, a second pattern mask M2 is formed on the first insulating layer 160. As illustrated in FIG. 2, the second pattern mask M2 includes a reflective layer 132 to which the first and second connection electrodes 150-1 and 150-2 and the metal electrode 180 are to be connected, and a first conductivity type semiconductor layer. It has an opening that exposes that portion of 122. At this time, the opening of the portion to etch the first insulating layer 160 buried in the first, second, and third electrode holes H1, H2, and H3 may have an eighth width W8.

Thereafter, referring to FIG. 10E, the first insulating segments 162-1 and 162-2 are etched by etching the first insulating layer 160 using the second pattern mask M2 as an etch mask. (164), third insulating segments 166-1 and 166-2 and fourth insulating segments 168 are formed. Thereafter, the second pattern mask M2 is removed. As such, the first insulating segment 162-1, 162-2, the second insulating segment 164, the third insulating segment 166-1, 166-2, and the fourth insulating segment 168 are made of one single 1 Since the insulating layer 160 is obtained by etching, it can be seen that the same insulating material is included.

Thereafter, referring to FIG. 10F, the first conductive semiconductor layer is etched by etching the first insulating layer 160 buried in the first, second, and third electrode holes H1, H2, and H3 as shown in FIG. 10E. A metal layer (not shown) is formed by depositing a metal layer (not shown) on the first insulating layers 162-1, 162-2, 164, 166-1, 166-2, and 168 while filling the through-hole through which the 122 is exposed. Thereafter, a third pattern mask (not shown) having openings exposing the second insulating segments 164, the third insulating segments 166-1, 166-2, and the fourth insulating segments 168 is formed on the metal layer. . Thereafter, the metal layer is etched using the third pattern mask as an etch mask to form the first and second connection electrodes 150-1 and 150-2 and the metal electrode 180. Thereafter, the third pattern mask is removed.

Alternatively, as shown in FIG. 10E, after forming the plurality of first to fourth insulating segments 162-1, 162-2, 164, 166-1, 166-2, and 168, the second pattern mask M2 ), the second pattern mask M2 while filling through holes exposing the first conductivity type semiconductor layer 122 in the first, second, and third electrode holes H1, H2, and H3 It can be formed by depositing a metal layer on top. Thereafter, when the second pattern mask M2 and the metal layer formed thereon are removed together, a result shown in FIG. 10F may be formed.

Thereafter, as illustrated in FIG. 10G, the first and second connecting electrodes 150-1 and 150-2, the second insulating segment 164, the third insulating segment 166-1 and 166-2, and 4 forming a second insulating layer 190 over the insulating segment 168, and the metal electrode 180 and the reflective layer to which the first and second electrode parts 172 and 174 are connected to the upper portion of the second insulating layer 190 ( A fourth pattern mask M4 having an opening exposing 134 is formed. Thereafter, the second insulating layer 190 is etched using the fourth pattern mask M4 as an etch mask to expose the corresponding reflective layer 134 and the metal electrode 180. Thereafter, the fourth pattern mask M4 is removed.

Thereafter, a metal material is embedded in the opening exposed by etching by the fourth pattern mask M4 to form first and second electrode parts 172 and 174 as illustrated in FIG. 2.

Hereinafter, the light emitting device package 200 including the light emitting device 100 illustrated in FIGS. 1 and 2 will be described with reference to FIG. 11 as follows. However, the light emitting device 100 illustrated in FIGS. 1 and 2 may be used in the light emitting device package 200 in a form different from that shown in FIG. 11.

11 shows a light emitting device package 200 including the light emitting device 100 according to the embodiment.

Referring to FIG. 11, the light emitting device package 200 includes a light emitting device 100, a first bump part 212, a second bump part 214, a first metal layer 222, a second metal layer 224, and subs And a mount 230.

The sub-mount 230 mounts the light emitting device 100. The sub-mount 230 may be implemented as a package body or a printed circuit board, and if the light emitting device 100 can be flip chip bonded, it may have various forms. Can.

The light emitting device 100 is disposed on the submount 230 and is electrically connected to the first and second metal layers 222 and 224 by the first bump portion 212 and the second bump portion 214, respectively. . The light emitting device 100 illustrated in FIG. 11 corresponds to the light emitting device 100 illustrated in FIGS. 1 and 2, but embodiments are not limited thereto.

Sub-mount 230 is polyphthalamide (PolyPhthal Amide, PPA), liquid crystal polymer (Liquid Crystal Polymer, LCP), polyamide 9T (PolyAmide9T, PA9T), such as resin, metal, photosensitive glass (photo sensitive glass), sapphire , Ceramics, printed circuit boards, and the like. However, the sub-mount 230 according to the embodiment is not limited to these materials.

The first metal layer 222 and the second metal layer 224 are spaced apart from each other in the first direction on the upper surface of the sub-mount 230. Here, the upper surface of the sub-mount 230 may be a surface facing the light emitting device 100. The first metal layer 222 and the second metal layer 224 may be conductive metal, for example, aluminum (Al) or rhodium (Rh).

The first bump part 212 and the second bump part 214 are respectively disposed between the first metal layer 222 and the second metal layer 224 and the light emitting device 100. The first bump part 212 may electrically connect the first electrode part 172 and the first metal layer 222 of the light emitting device 100. The second bump part 214 may electrically connect the second electrode part 174 of the light emitting device 100 and the second metal layer 224.

When the light emitting device package 200 is implemented in the form of a flip chip as illustrated in FIG. 11, the light is directed downward toward the sub-mount 230 through the conductive layers 142 and 144 in the positive (+) third direction ( Instead of being emitted to Z), it is emitted through the substrate 110 in the third direction Z in the negative (-) direction. Therefore, the light extraction efficiency of the light emitting device package 200 is not affected by the first thickness t1 of the conductive layers 142 and 144, and may be affected by light absorption characteristics or resistance characteristics of the conductive layers 142 and 144. It may not be affected. In addition, the design of the mesa regions having the first and second electrode portions 172 and 174 and the sixth width W6 may not be restricted by the characteristics of the conductive layers 142 and 144.

In addition, referring to FIG. 11, by disposing the reflective layers 132 and 134 under the conductive layers 142 and 144, the spreading of the carrier can be improved to improve the electrical properties as well as the conductive layers 142, 144) can be formed to be thin, the reflectivity is improved, the optical characteristics of the light emitting device package 200 can be improved.

In addition, it is assumed that the light emitting device package 200 is implemented in a flip chip form as illustrated in FIG. 11, electrons are supplied through the first electrode portion 172, and holes are supplied through the second electrode portion 174. lets do it. In this case, as described above, if the first, second, and third widths W1, W2, and W3 are the same, the reflective layers 132 and 134 may cover the entire area other than the area having the seventh width W7. Therefore, the spreading of holes in each of the first, second, and third light emitting cells P1, P2, and P3 may be more uniform, so that electrical characteristics, that is, electrical conductivity, can be improved. Particularly, when the first, second, and third electrode holes H1, H2, and H3 have a circular planar shape, carriers can be spread in a radially uniform manner.

In addition, the light emitting device 100 and the light emitting device package 200 may adjust the number of electrode holes, the spacing of the electrode holes, or the arranged shapes according to a desired current density.

In addition, when the number of electrode holes included in the unit light emitting cell increases, the electrical characteristics of the light emitting device are improved, and when the number of electrode holes is decreased, the optical properties of the light emitting device are improved. Accordingly, the number of electrode holes can be determined in consideration of this.

A plurality of light emitting device packages according to an embodiment are arranged on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, and the like, which are optical members, may be disposed on an optical path of the light emitting device package. The light emitting device package, the substrate, and the optical member may function as a backlight unit.

Another embodiment may be implemented as a display device, an indicator device, a lighting device including the light emitting device or the light emitting device package described in the above-described embodiments, for example, the lighting device may include a lamp, a street light.

12 illustrates a head lamp 900 including a light emitting device package according to an embodiment.

Referring to FIG. 12, the head lamp 900 includes a light emitting module 901, a reflector 902, a shade 903, and a lens 904.

The light emitting module 901 may include a plurality of light emitting device packages (not shown) disposed on a substrate (not shown). In this case, the light emitting device package may be the embodiment 200 illustrated in FIG. 11.

The reflector 902 reflects the light 911 emitted from the light emitting module 901 in a predetermined direction, for example, the front 912.

The shade 903 is disposed between the reflector 902 and the lens 904, and is a member that blocks or reflects a portion of light reflected by the reflector 902 to the lens 904 to form a light distribution pattern desired by the designer As, the height of one side portion 903-1 and the other side portion 903-2 of the shade 903 may be different from each other.

The light emitted from the light emitting module 901 may be reflected by the reflector 902 and the shade 903 and then pass through the lens 904 to face the vehicle body front. The lens 904 may refract light reflected by the reflector 902 in the forward direction.

13 shows a lighting device 1000 including a light emitting device or a light emitting device package according to an embodiment.

Referring to FIG. 13, the lighting device 1000 may include a cover 1100, a light source module 1200, a heat radiator 1400, a power supply unit 1600, an inner case 1700 and a socket 1800. have. In addition, the lighting device 1000 according to the embodiment may further include any one or more of the member 1300 and the holder 1500.

The light source module 1200 may include the light emitting device 100 illustrated in FIG. 2 or the light emitting device package 200 illustrated in FIG. 11.

The cover 1100 may be in the shape of a bulb or a hemisphere, the hollow may be hollow, and a portion may be opened. The cover 1100 may be optically coupled to the light source module 1200. For example, the cover 1100 may diffuse, scatter, or excite light provided from the light source module 1200. The cover 1100 may be a kind of optical member. The cover 1100 may be combined with the radiator 1400. The cover 1100 may have a coupling portion that engages the heat radiator 1400.

A milky white coating may be coated on the inner surface of the cover 1100. The milky white paint may include a diffusion material that diffuses light. The surface roughness of the inner surface of the cover 1100 may be greater than the surface roughness of the outer surface of the cover 1100. This is for light from the light source module 1200 to be sufficiently scattered and diffused to be emitted to the outside.

The material of the cover 1100 may be glass, plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC), or the like. Here, polycarbonate has excellent light resistance, heat resistance, and strength. The cover 1100 may be transparent so that the light source module 1200 is visible from the outside, but is not limited thereto and may be opaque. The cover 1100 may be formed through blow molding.

The light source module 1200 may be disposed on one surface of the heat radiator 1400, and heat generated from the light source module 1200 may be conducted to the heat radiator 1400. The light source module 1200 may include a light source unit 1210, a connection plate 1230, and a connector 1250.

The member 1300 may be disposed on the upper surface of the radiator 1400, and has a plurality of light source units 1210 and a guide groove 1310 into which the connector 1250 is inserted. The guide groove 1310 may correspond to or be aligned with the substrate and connector 1250 of the light source unit 1210.

The surface of the member 1300 may be coated or coated with a light reflective material.

For example, the surface of the member 1300 may be coated or coated with a white paint. The member 1300 may reflect light reflected on the inner surface of the cover 1100 and return toward the light source module 1200 again in the direction of the cover 1100. Therefore, it is possible to improve the light efficiency of the lighting device according to the embodiment.

The member 1300 may be made of an insulating material, for example. The connection plate 1230 of the light source module 1200 may include an electrically conductive material. Accordingly, electrical contact may be made between the radiator 1400 and the connection plate 1230. The member 1300 may be formed of an insulating material to block electrical shorts between the connection plate 1230 and the radiator 1400. The heat radiator 1400 may radiate heat by receiving heat from the light source module 1200 and heat from the power supply unit 1600.

The holder 1500 closes the storage groove 1719 of the insulating portion 1710 of the inner case 1700. Therefore, the power supply unit 1600 accommodated in the insulating portion 1710 of the inner case 1700 may be sealed. The holder 1500 may have a guide protrusion 1510, and the guide protrusion 1510 may have a hole through which the protrusion 1610 of the power supply unit 1600 passes.

The power supply unit 1600 processes or converts an electrical signal provided from the outside and provides it to the light source module 1200. The power supply unit 1600 may be accommodated in the receiving groove 1719 of the inner case 1700, and may be sealed inside the inner case 1700 by the holder 1500. The power supply unit 1600 may include a protrusion 1610, a guide unit 1630, a base 1650 and an extension unit 1670.

The guide portion 1630 may have a shape protruding from the side of the base 1650 to the outside. The guide portion 1630 may be inserted into the holder 1500. A plurality of parts may be disposed on one surface of the base 1650. For example, a plurality of components include, for example, a DC converter that converts AC power provided from an external power source into DC power, a driving chip that controls the driving of the light source module 1200, and ESD (ElectroStatic) to protect the light source module 1200. discharge) protection element and the like, but is not limited thereto.

The extension 1670 may have a shape protruding from the other side of the base 1650 to the outside. The extension part 1670 may be inserted inside the connection part 1750 of the inner case 1700, and may receive an electrical signal from the outside. For example, the extension 1670 may be the same or smaller in width than the connection 1750 of the inner case 1700. Each end of the "+ wire" and "- wire" may be electrically connected to the extension 1670, and the other end of the "+ wire" and "- wire" may be electrically connected to the socket 1800. .

The inner case 1700 may include a molding unit together with a power supply unit 1600 therein. The molding part is a part in which the molding liquid is hardened, so that the power supply unit 1600 can be fixed inside the inner case 1700.

The embodiments have been mainly described above, but this is merely an example and does not limit the present invention, and those of ordinary skill in the art to which the present invention pertains have not been exemplified above in a range that does not depart from the essential characteristics of the present embodiment. It will be appreciated that various modifications and applications are possible. For example, each component specifically shown in the embodiment can be implemented by modification. And differences related to these modifications and applications should be construed as being included in the scope of the invention defined in the appended claims.

100: light-emitting element 110: substrate
112: uneven pattern 120: light emitting structure
122: first conductive semiconductor layer 124: active layer
126: second conductivity type semiconductor layer 130: separation space
130A, 132, 134, 136: reflective layer 140, 142, 144, 146: conductive layer
150-1, 150-2: connecting electrode 160: first insulating layer
162-1, 162-1: first insulating segment 164: second insulating segment
166-1, 166-2: third insulating segment
168, 168-1, 168-2: fourth insulating segment
172: first electrode portion 174: second electrode portion
180: metal electrode 190: second insulating layer
200: light emitting device package 212: first bump portion
214: second bump portion 222: first metal layer
224: second metal layer 230: sub-mount
900: headlamp 902: reflector
903: shade 904: lens
1000: lighting device 1100: cover
1200: light source module 1400: radiator
1600: Power supply 1700: Inner case
1800: socket

Claims (23)

Board;
A plurality of light emitting cells disposed on the substrate;
Connection electrodes connecting the plurality of light emitting cells to each other; And
And a first insulating layer disposed between the adjacent light emitting cell connected by the connection electrode and the connection electrode,
Each of the plurality of light emitting cells
A light emitting structure including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer; And
It is formed in the form of a blind hole in the thickness direction of the light emitting structure in the center of the width of the light emitting cell and includes at least one electrode hole exposing the first conductivity type semiconductor layer,
The connection electrode passes through the first insulating layer embedded in the first electrode hole corresponding to the at least one electrode hole included in one of the neighboring light emitting cells, and is connected to the first conductive semiconductor layer and is connected to the neighboring electrode. Is connected to the second conductive semiconductor layer of the other of the light emitting cell,
In each of the plurality of light emitting cells, the number of the at least one electrode hole, the size of the at least one electrode hole, the spacing between the plurality of electrode holes when the at least one electrode hole includes a plurality of electrode holes, or the plurality of At least one of the directions in which the electrode holes are arranged is determined according to at least one of a planar shape, a planar size, or a desired current density of the corresponding light emitting cell,
The plurality of electrode holes are disposed at equal intervals from each other in at least one of the first or second directions,
Each of the first and second directions is a direction different from the thickness direction,
The plurality of electrode holes are arranged in the center of the horizontal or vertical width of the light emitting cell,
The half of the first distance, which is the shortest distance between the electrode holes, which is the closest to each other among the plurality of electrode holes, corresponds to a second distance that is the shortest distance between the edge of the light emitting cell and the electrode hole. The method of claim 1, wherein the light emitting element
A first electrode part penetrating through the first insulating layer buried in a second electrode hole corresponding to the at least one electrode hole of the one of the plurality of light emitting cells and connected to the first conductivity type semiconductor layer;
A second electrode part connected to the second conductivity type semiconductor layer included in another one of the plurality of light emitting cells; And
Further comprising a metal electrode passing through the first insulating layer buried in the second electrode hole, and disposed between the first electrode portion and the first conductivity type semiconductor layer,
Each of the plurality of light emitting cells
Further comprising a reflective layer disposed on the second conductive semiconductor layer,
The connection electrode is connected to the second conductive type semiconductor layer through the reflective layer included in the other one of the neighboring light emitting cells,
The second electrode part is a light emitting device connected to the second conductive type semiconductor layer via the reflective layer included in the other one of the plurality of light emitting cells. delete delete delete delete delete delete delete Board;
A plurality of light emitting cells disposed on the substrate;
Connection electrodes connecting the plurality of light emitting cells to each other; And
And a first insulating layer disposed between the adjacent light emitting cell connected by the connection electrode and the connection electrode,
Each of the plurality of light emitting cells
A light emitting structure including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer; And
It is formed in the form of a blind hole in the thickness direction of the light emitting structure in the center of the width of the light emitting cell and includes at least one electrode hole exposing the first conductivity type semiconductor layer,
The connection electrode passes through the first insulating layer embedded in the first electrode hole corresponding to the at least one electrode hole included in one of the neighboring light emitting cells, and is connected to the first conductive semiconductor layer and is connected to the neighboring electrode. Is connected to the second conductive semiconductor layer of the other of the light emitting cell,
In each of the plurality of light emitting cells, the number of the at least one electrode hole, the size of the at least one electrode hole, the spacing between the plurality of electrode holes when the at least one electrode hole includes a plurality of electrode holes, or the plurality of At least one of the directions in which the electrode holes are arranged is determined according to at least one of a planar shape, a planar size, or a desired current density of the corresponding light emitting cell,
The plurality of electrode holes are disposed at equal intervals from each other in at least one of the first or second directions,
Each of the first and second directions is a direction different from the thickness direction,
The plurality of electrode holes are arranged in the center of the horizontal or vertical width of the light emitting cell,
The second distance, which is the shortest distance between the edge of the light emitting cell and the electrode hole, is at least a first distance that is the shortest separation distance between the electrode holes that are closest to each other among the plurality of electrode holes. delete 11. The method of claim 1 or claim 10, When the first distance corresponds to the shortest distance between the boundary and the boundary of the adjacent electrode hole, the second distance corresponds to the shortest distance between the edge and the boundary of the electrode hole do or,
When the first distance corresponds to the distance between the center and the center of the adjacent electrode hole, the second distance corresponds to the shortest distance between the edge and the center of the electrode hole. delete delete delete The method of claim 1, wherein the first insulating layer
A first insulating segment disposed between the neighboring light emitting cell and the connection electrode;
A second insulating segment disposed between adjacent connection electrodes in each of the first light emitting cells in which the first and second electrode parts are not disposed among the plurality of light emitting cells;
A third insulating segment disposed between the first electrode portion and the connection electrode in the second light emitting cell in which the first electrode portion is disposed among the plurality of light emitting cells; And
In a third light emitting cell in which the second electrode part is disposed among the plurality of light emitting cells, a fourth insulating segment disposed between the second electrode part and the connection electrode,
Further comprising a second insulating layer disposed on the upper portion of the second to fourth insulating segments and the connecting electrode,
The first and second electrode portions pass through the first and second insulating layers and are respectively connected to the first conductive type semiconductor layer and the second conductive type semiconductor layer. delete delete delete delete delete delete Sub-mount;
First and second metal layers spaced apart from each other on the sub-mount;
The light emitting element according to any one of claims 1, 2, 10 and 16; And
A light emitting device package including first and second bump parts electrically connecting the light emitting device and the sub-mount.

Images