KR102113686B1 - 웨이퍼의 제조 방법 - Google Patents

웨이퍼의 제조 방법 Download PDF

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Publication number
KR102113686B1
KR102113686B1 KR1020187021736A KR20187021736A KR102113686B1 KR 102113686 B1 KR102113686 B1 KR 102113686B1 KR 1020187021736 A KR1020187021736 A KR 1020187021736A KR 20187021736 A KR20187021736 A KR 20187021736A KR 102113686 B1 KR102113686 B1 KR 102113686B1
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KR
South Korea
Prior art keywords
wire
cutting
ingot
single crystal
diameter
Prior art date
Application number
KR1020187021736A
Other languages
English (en)
Korean (ko)
Other versions
KR20180097744A (ko
Inventor
마사오 다카다
마코토 후나야마
츠카사 요시하라
켄지 치와타
Original Assignee
가부시키가이샤 사무코
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 사무코 filed Critical 가부시키가이샤 사무코
Publication of KR20180097744A publication Critical patent/KR20180097744A/ko
Application granted granted Critical
Publication of KR102113686B1 publication Critical patent/KR102113686B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/06—Grinders for cutting-off
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020187021736A 2016-02-15 2016-12-07 웨이퍼의 제조 방법 KR102113686B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2016-025993 2016-02-15
JP2016025993A JP6493243B2 (ja) 2016-02-15 2016-02-15 ウェーハの製造方法
PCT/JP2016/086451 WO2017141523A1 (ja) 2016-02-15 2016-12-07 ウェーハの製造方法

Publications (2)

Publication Number Publication Date
KR20180097744A KR20180097744A (ko) 2018-08-31
KR102113686B1 true KR102113686B1 (ko) 2020-05-21

Family

ID=59625782

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020187021736A KR102113686B1 (ko) 2016-02-15 2016-12-07 웨이퍼의 제조 방법

Country Status (5)

Country Link
JP (1) JP6493243B2 (zh)
KR (1) KR102113686B1 (zh)
CN (1) CN108698191B (zh)
TW (1) TWI615894B (zh)
WO (1) WO2017141523A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102018212734B4 (de) 2018-07-31 2023-03-23 Siltronic Ag Verfahren zum gleichzeitigen Abtrennen einer Vielzahl von Scheiben von einem Stab

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011054822A (ja) 2009-09-03 2011-03-17 Sumco Corp シリコンインゴットの切断方法
JP2012106322A (ja) 2010-11-19 2012-06-07 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 インゴットの切断方法
JP2015100853A (ja) 2013-11-21 2015-06-04 信越半導体株式会社 ワークの切断方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3566449B2 (ja) * 1996-03-27 2004-09-15 信越半導体株式会社 ワイヤソーによるワーク切断方法
JP4977910B2 (ja) * 2006-04-06 2012-07-18 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 ワイヤによるワークの切断方法
DE102006058823B4 (de) * 2006-12-13 2017-06-08 Siltronic Ag Verfahren zum Abtrennen einer Vielzahl von Scheiben von einem Werkstück
CN102039638B (zh) * 2009-10-26 2013-04-24 英利能源（中国）有限公司 一种利用切割线切割基片的切割方法
JP5590001B2 (ja) * 2011-10-04 2014-09-17 信越半導体株式会社 ワークの切断方法及びワイヤソー
JP6015598B2 (ja) * 2013-08-28 2016-10-26 信越半導体株式会社 インゴットの切断方法及びワイヤソー

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011054822A (ja) 2009-09-03 2011-03-17 Sumco Corp シリコンインゴットの切断方法
JP2012106322A (ja) 2010-11-19 2012-06-07 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 インゴットの切断方法
JP2015100853A (ja) 2013-11-21 2015-06-04 信越半導体株式会社 ワークの切断方法

Also Published As

Publication number Publication date
KR20180097744A (ko) 2018-08-31
JP2017144494A (ja) 2017-08-24
TWI615894B (zh) 2018-02-21
TW201735146A (zh) 2017-10-01
JP6493243B2 (ja) 2019-04-03
WO2017141523A1 (ja) 2017-08-24
CN108698191B (zh) 2020-09-15
CN108698191A (zh) 2018-10-23

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