KR102110913B1 - 파면 분석을 위한 디바이스 및 방법 - Google Patents

파면 분석을 위한 디바이스 및 방법 Download PDF

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Publication number
KR102110913B1
KR102110913B1 KR1020187017480A KR20187017480A KR102110913B1 KR 102110913 B1 KR102110913 B1 KR 102110913B1 KR 1020187017480 A KR1020187017480 A KR 1020187017480A KR 20187017480 A KR20187017480 A KR 20187017480A KR 102110913 B1 KR102110913 B1 KR 102110913B1
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KR
South Korea
Prior art keywords
grating
wavefront
optical system
overlapping
interference pattern
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KR1020187017480A
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English (en)
Korean (ko)
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KR20180084959A (ko
Inventor
울리히 베그만
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칼 짜이스 에스엠테 게엠베하
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Publication of KR20180084959A publication Critical patent/KR20180084959A/ko
Application granted granted Critical
Publication of KR102110913B1 publication Critical patent/KR102110913B1/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J9/00—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength
    • G01J9/02—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength by interferometric methods
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • G01M11/02—Testing optical properties
    • G01M11/0221—Testing optical properties by determining the optical axis or position of lenses
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • G01M11/02—Testing optical properties
    • G01M11/0242—Testing optical properties by measuring geometrical properties or aberrations
    • G01M11/0271—Testing optical properties by measuring geometrical properties or aberrations by using interferometric methods
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • G01M11/02—Testing optical properties
    • G01M11/0285—Testing optical properties by measuring material or chromatic transmission properties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G03F7/70266—Adaptive optics, e.g. deformable optical elements for wavefront control, e.g. for aberration adjustment or correction
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J9/00—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength
    • G01J9/02—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength by interferometric methods
    • G01J9/0215—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength by interferometric methods by shearing interferometric methods
    • G01J2009/0219—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength by interferometric methods by shearing interferometric methods using two or more gratings

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Geometry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Optics & Photonics (AREA)
  • Testing Of Optical Devices Or Fibers (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020187017480A 2015-12-22 2016-11-29 파면 분석을 위한 디바이스 및 방법 KR102110913B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102015226571.4A DE102015226571B4 (de) 2015-12-22 2015-12-22 Vorrichtung und Verfahren zur Wellenfrontanalyse
DE102015226571.4 2015-12-22
PCT/EP2016/079136 WO2017108349A1 (en) 2015-12-22 2016-11-29 Device and method for wavefront analysis

Publications (2)

Publication Number Publication Date
KR20180084959A KR20180084959A (ko) 2018-07-25
KR102110913B1 true KR102110913B1 (ko) 2020-05-14

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020187017480A KR102110913B1 (ko) 2015-12-22 2016-11-29 파면 분석을 위한 디바이스 및 방법

Country Status (7)

Country Link
US (1) US10386728B2 (zh)
JP (1) JP6605736B2 (zh)
KR (1) KR102110913B1 (zh)
CN (1) CN108431694B (zh)
DE (1) DE102015226571B4 (zh)
TW (1) TWI722082B (zh)
WO (1) WO2017108349A1 (zh)

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EP3298446A2 (de) 2015-05-20 2018-03-28 Carl Zeiss SMT GmbH Messverfahren und messanordnung für ein abbildendes optisches system
DE102017216679A1 (de) * 2017-09-20 2019-03-21 Carl Zeiss Smt Gmbh Mikrolithographische Projektionsbelichtungsanlage
DE102018124396A1 (de) * 2018-10-02 2020-04-02 Carl Zeiss Smt Gmbh Metrologiesystem und Verfahren zur Vermessung eines Anregungs-Laserstrahls in einer EUV-Plasmaquelle
US11231375B2 (en) * 2019-05-20 2022-01-25 Wisconsin Alumni Research Foundation Apparatus for high-speed surface relief measurement
CN110608677B (zh) * 2019-10-22 2021-04-06 西安工业大学 一种基于圆光栅径向剪切干涉仪的三维位移测量方法
DE102019131327A1 (de) * 2019-11-20 2021-05-20 Carl Zeiss Smt Gmbh Vorrichtung und Verfahren zur Messung von Substraten für die Halbleiterlithographie
EP3964809A1 (en) * 2020-09-02 2022-03-09 Stichting VU Wavefront metrology sensor and mask therefor, method for optimizing a mask and associated apparatuses
EP4291865A1 (en) * 2021-02-11 2023-12-20 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Method and system for characterizing a focusing optical element

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US6573997B1 (en) * 2000-07-17 2003-06-03 The Regents Of California Hybrid shearing and phase-shifting point diffraction interferometer
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JP2009004711A (ja) 2007-06-25 2009-01-08 Canon Inc 計測装置、露光装置及びデバイス製造方法
JP2010206033A (ja) * 2009-03-04 2010-09-16 Nikon Corp 波面収差計測装置、該装置の校正方法、及び露光装置
JP2010206032A (ja) 2009-03-04 2010-09-16 Nikon Corp 波面収差計測装置、該装置の校正方法、及び露光装置
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Also Published As

Publication number Publication date
TW201732219A (zh) 2017-09-16
DE102015226571B4 (de) 2019-10-24
CN108431694B (zh) 2020-10-09
KR20180084959A (ko) 2018-07-25
JP6605736B2 (ja) 2019-11-13
CN108431694A (zh) 2018-08-21
US20180299782A1 (en) 2018-10-18
DE102015226571A1 (de) 2017-06-22
JP2019507369A (ja) 2019-03-14
US10386728B2 (en) 2019-08-20
TWI722082B (zh) 2021-03-21
WO2017108349A1 (en) 2017-06-29

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