KR20180084959A - 파면 분석을 위한 디바이스 및 방법 - Google Patents

파면 분석을 위한 디바이스 및 방법 Download PDF

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Publication number
KR20180084959A
KR20180084959A KR1020187017480A KR20187017480A KR20180084959A KR 20180084959 A KR20180084959 A KR 20180084959A KR 1020187017480 A KR1020187017480 A KR 1020187017480A KR 20187017480 A KR20187017480 A KR 20187017480A KR 20180084959 A KR20180084959 A KR 20180084959A
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KR
South Korea
Prior art keywords
methods
devices
wavefront analysis
wavefront
analysis
Prior art date
Application number
KR1020187017480A
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English (en)
Other versions
KR102110913B1 (ko
Inventor
울리히 베그만
Original Assignee
칼 짜이스 에스엠테 게엠베하
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Application filed by 칼 짜이스 에스엠테 게엠베하 filed Critical 칼 짜이스 에스엠테 게엠베하
Publication of KR20180084959A publication Critical patent/KR20180084959A/ko
Application granted granted Critical
Publication of KR102110913B1 publication Critical patent/KR102110913B1/ko

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591Testing optical components
    • G03F7/706Aberration measurement
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J9/00Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength
    • G01J9/02Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength by interferometric methods
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01MTESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • G01M11/02Testing optical properties
    • G01M11/0221Testing optical properties by determining the optical axis or position of lenses
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01MTESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • G01M11/02Testing optical properties
    • G01M11/0242Testing optical properties by measuring geometrical properties or aberrations
    • G01M11/0271Testing optical properties by measuring geometrical properties or aberrations by using interferometric methods
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01MTESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • G01M11/02Testing optical properties
    • G01M11/0285Testing optical properties by measuring material or chromatic transmission properties
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/70141Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70258Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G03F7/70266Adaptive optics, e.g. deformable optical elements for wavefront control, e.g. for aberration adjustment or correction
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J9/00Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength
    • G01J9/02Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength by interferometric methods
    • G01J9/0215Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength by interferometric methods by shearing interferometric methods
    • G01J2009/0219Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength by interferometric methods by shearing interferometric methods using two or more gratings

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Geometry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Optics & Photonics (AREA)
  • Testing Of Optical Devices Or Fibers (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020187017480A 2015-12-22 2016-11-29 파면 분석을 위한 디바이스 및 방법 KR102110913B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102015226571.4A DE102015226571B4 (de) 2015-12-22 2015-12-22 Vorrichtung und Verfahren zur Wellenfrontanalyse
DE102015226571.4 2015-12-22
PCT/EP2016/079136 WO2017108349A1 (en) 2015-12-22 2016-11-29 Device and method for wavefront analysis

Publications (2)

Publication Number Publication Date
KR20180084959A true KR20180084959A (ko) 2018-07-25
KR102110913B1 KR102110913B1 (ko) 2020-05-14

Family

ID=57570230

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020187017480A KR102110913B1 (ko) 2015-12-22 2016-11-29 파면 분석을 위한 디바이스 및 방법

Country Status (7)

Country Link
US (1) US10386728B2 (ko)
JP (1) JP6605736B2 (ko)
KR (1) KR102110913B1 (ko)
CN (1) CN108431694B (ko)
DE (1) DE102015226571B4 (ko)
TW (1) TWI722082B (ko)
WO (1) WO2017108349A1 (ko)

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KR102598505B1 (ko) 2015-05-20 2023-11-06 칼 짜이스 에스엠테 게엠베하 이미징 광학 시스템용 측정 방법 및 측정 배열체
DE102017216679A1 (de) 2017-09-20 2019-03-21 Carl Zeiss Smt Gmbh Mikrolithographische Projektionsbelichtungsanlage
DE102018124396A1 (de) * 2018-10-02 2020-04-02 Carl Zeiss Smt Gmbh Metrologiesystem und Verfahren zur Vermessung eines Anregungs-Laserstrahls in einer EUV-Plasmaquelle
US11231375B2 (en) * 2019-05-20 2022-01-25 Wisconsin Alumni Research Foundation Apparatus for high-speed surface relief measurement
CN110608677B (zh) * 2019-10-22 2021-04-06 西安工业大学 一种基于圆光栅径向剪切干涉仪的三维位移测量方法
DE102019131327A1 (de) * 2019-11-20 2021-05-20 Carl Zeiss Smt Gmbh Vorrichtung und Verfahren zur Messung von Substraten für die Halbleiterlithographie
EP3964809A1 (en) * 2020-09-02 2022-03-09 Stichting VU Wavefront metrology sensor and mask therefor, method for optimizing a mask and associated apparatuses
WO2022171289A1 (en) * 2021-02-11 2022-08-18 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Method and system for characterizing a focusing optical element

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JP2009004711A (ja) * 2007-06-25 2009-01-08 Canon Inc 計測装置、露光装置及びデバイス製造方法
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US5170221A (en) * 1990-06-15 1992-12-08 Okuma Corp. Parallel light ray measuring apparatus
JP2000146705A (ja) * 1998-11-04 2000-05-26 Nikon Corp グレーティングシアリング干渉計を用いた位相分布の計測方法
TW550377B (en) 2000-02-23 2003-09-01 Zeiss Stiftung Apparatus for wave-front detection
US6573997B1 (en) * 2000-07-17 2003-06-03 The Regents Of California Hybrid shearing and phase-shifting point diffraction interferometer
DE10258142A1 (de) 2002-12-04 2004-06-24 Carl Zeiss Smt Ag Vorrichtung zur optischen Vermessung eines Abbildungssystems
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JP2006521157A (ja) * 2003-03-25 2006-09-21 ボシュ・アンド・ロム・インコーポレイテッド モアレ収差測定器
JP2009004711A (ja) * 2007-06-25 2009-01-08 Canon Inc 計測装置、露光装置及びデバイス製造方法
JP2010206033A (ja) * 2009-03-04 2010-09-16 Nikon Corp 波面収差計測装置、該装置の校正方法、及び露光装置
JP2010206032A (ja) * 2009-03-04 2010-09-16 Nikon Corp 波面収差計測装置、該装置の校正方法、及び露光装置
JP2012145554A (ja) * 2011-01-14 2012-08-02 Canon Inc シアリング干渉測定装置

Also Published As

Publication number Publication date
CN108431694B (zh) 2020-10-09
TWI722082B (zh) 2021-03-21
DE102015226571A1 (de) 2017-06-22
CN108431694A (zh) 2018-08-21
KR102110913B1 (ko) 2020-05-14
US20180299782A1 (en) 2018-10-18
DE102015226571B4 (de) 2019-10-24
US10386728B2 (en) 2019-08-20
TW201732219A (zh) 2017-09-16
JP6605736B2 (ja) 2019-11-13
JP2019507369A (ja) 2019-03-14
WO2017108349A1 (en) 2017-06-29

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