KR102103128B1 - 애벌란시 포토 다이오드 센서 - Google Patents

애벌란시 포토 다이오드 센서 Download PDF

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KR102103128B1
KR102103128B1 KR1020197015450A KR20197015450A KR102103128B1 KR 102103128 B1 KR102103128 B1 KR 102103128B1 KR 1020197015450 A KR1020197015450 A KR 1020197015450A KR 20197015450 A KR20197015450 A KR 20197015450A KR 102103128 B1 KR102103128 B1 KR 102103128B1
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KR20190109388A (ko
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쿄스케 이토
토시후비 와카노
유스케 오타케
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소니 세미컨덕터 솔루션즈 가부시키가이샤
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H01L31/107—
    • H01L31/02002—
    • H01L31/0224—
    • H01L31/0352—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G01J2001/4446—Type of detector
    • G01J2001/446—Photodiode
    • G01J2001/4466—Avalanche

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Optical Radar Systems And Details Thereof (AREA)
KR1020197015450A 2017-10-26 2018-09-03 애벌란시 포토 다이오드 센서 Active KR102103128B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017206729A JP6860467B2 (ja) 2017-10-26 2017-10-26 フォトダイオード、画素回路、および、フォトダイオードの製造方法
JPJP-P-2017-206729 2017-10-26
PCT/JP2018/032637 WO2019082513A1 (en) 2017-10-26 2018-09-03 AVALANCHE PHOTODIODE SENSOR

Related Child Applications (1)

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KR1020207010621A Division KR20200063160A (ko) 2017-10-26 2018-09-03 애벌란시 포토 다이오드 센서

Publications (2)

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KR20190109388A KR20190109388A (ko) 2019-09-25
KR102103128B1 true KR102103128B1 (ko) 2020-04-21

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KR1020197015450A Active KR102103128B1 (ko) 2017-10-26 2018-09-03 애벌란시 포토 다이오드 센서
KR1020207010621A Withdrawn KR20200063160A (ko) 2017-10-26 2018-09-03 애벌란시 포토 다이오드 센서

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Country Link
US (1) US11333549B2 (https=)
EP (1) EP3545559B1 (https=)
JP (1) JP6860467B2 (https=)
KR (2) KR102103128B1 (https=)
CN (1) CN110036491B (https=)
WO (1) WO2019082513A1 (https=)

Families Citing this family (9)

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JP7445397B2 (ja) * 2019-07-31 2024-03-07 ソニーセミコンダクタソリューションズ株式会社 受光素子および電子機器
JP7362352B2 (ja) 2019-08-23 2023-10-17 キヤノン株式会社 光電変換装置、光電変換システム、および移動体
US11374135B2 (en) * 2019-08-30 2022-06-28 Globalfoundries Singapore Pte. Ltd. Sensor and method of forming the same
DE112020006344T5 (de) * 2019-12-26 2022-10-27 Hamamatsu Photonics K.K. Range-Imaging-Sensor und Verfahren zur Herstellung dieses Sensors
DE112020006385T5 (de) 2019-12-26 2022-10-13 Hamamatsu Photonics K.K. Range-imaging-sensor
KR102933506B1 (ko) * 2020-03-31 2026-03-04 에스케이하이닉스 주식회사 이미지 센싱 장치
CN114124212A (zh) * 2020-08-26 2022-03-01 华为技术有限公司 一种分光探测器及光纤通信系统
JP2022054553A (ja) * 2020-09-28 2022-04-07 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、および、撮像装置
CN116400370A (zh) * 2022-05-30 2023-07-07 神盾股份有限公司 距离感测装置及其感测方法

Citations (1)

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Publication number Priority date Publication date Assignee Title
US20150054111A1 (en) 2013-08-23 2015-02-26 Kabushiki Kaisha Toyota Chuo Kenkyusho Single photon avalanche diode

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JP5015494B2 (ja) * 2006-05-22 2012-08-29 住友電工デバイス・イノベーション株式会社 半導体受光素子
WO2008113067A2 (en) 2007-03-15 2008-09-18 Johns Hopkins University Deep submicron and nano cmos single photon photodetector pixel with event based circuits for readout data-rate reduction
ITTO20080046A1 (it) * 2008-01-18 2009-07-19 St Microelectronics Srl Schiera di fotodiodi operanti in modalita' geiger reciprocamente isolati e relativo procedimento di fabbricazione
JP5631668B2 (ja) * 2010-09-02 2014-11-26 Ｎｔｔエレクトロニクス株式会社 アバランシ・フォトダイオード
CN102184929B (zh) * 2011-03-24 2013-04-24 南京大学 紫外光雪崩管成像阵列像元、其应用方法及雪崩管成像阵列
JP5508356B2 (ja) * 2011-07-26 2014-05-28 シャープ株式会社 固体撮像装置およびその駆動方法、固体撮像装置の製造方法、並びに電子情報機器
JP5926921B2 (ja) * 2011-10-21 2016-05-25 浜松ホトニクス株式会社 光検出装置
EP3089224B1 (en) * 2014-02-12 2018-12-12 Huawei Technologies Co., Ltd. Waveguide-coupled avalanche photodiode and manufacturing method therefor
US10923614B2 (en) * 2014-07-25 2021-02-16 Panasonic Intellectual Property Management Co., Ltd. Photodiode, photodiode array, and solid-state imaging device
JP6362478B2 (ja) * 2014-08-27 2018-07-25 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
WO2017169122A1 (ja) * 2016-03-30 2017-10-05 ソニー株式会社 光電変換素子および光電変換装置
WO2018174090A1 (ja) * 2017-03-22 2018-09-27 ソニーセミコンダクタソリューションズ株式会社 撮像装置及び信号処理装置

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Publication number Priority date Publication date Assignee Title
US20150054111A1 (en) 2013-08-23 2015-02-26 Kabushiki Kaisha Toyota Chuo Kenkyusho Single photon avalanche diode

Non-Patent Citations (1)

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Title
Tomislav Resetar et al. Development of gated pinned avalanche photodiode pixels fog high-speed low light imaging, 2016. 8. 15. 공개

Also Published As

Publication number Publication date
JP2019079968A (ja) 2019-05-23
US20200249083A1 (en) 2020-08-06
JP6860467B2 (ja) 2021-04-14
EP3545559A1 (en) 2019-10-02
KR20200063160A (ko) 2020-06-04
CN110036491B (zh) 2024-02-13
CN110036491A (zh) 2019-07-19
KR20190109388A (ko) 2019-09-25
EP3545559B1 (en) 2024-11-27
WO2019082513A1 (en) 2019-05-02
US11333549B2 (en) 2022-05-17

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