KR102102699B1 - 양자점-기반 색-변환형 발광 디바이스 및 이를 제조하기 위한 방법 - Google Patents

양자점-기반 색-변환형 발광 디바이스 및 이를 제조하기 위한 방법 Download PDF

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KR102102699B1
KR102102699B1 KR1020180105689A KR20180105689A KR102102699B1 KR 102102699 B1 KR102102699 B1 KR 102102699B1 KR 1020180105689 A KR1020180105689 A KR 1020180105689A KR 20180105689 A KR20180105689 A KR 20180105689A KR 102102699 B1 KR102102699 B1 KR 102102699B1
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South Korea
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layer
light
chip
photoluminescent
optically transparent
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KR1020180105689A
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English (en)
Korean (ko)
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쳔 치에
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마븐 옵트로닉스 씨오., 엘티디.
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Optical Filters (AREA)
  • Luminescent Compositions (AREA)
KR1020180105689A 2017-09-08 2018-09-05 양자점-기반 색-변환형 발광 디바이스 및 이를 제조하기 위한 방법 KR102102699B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW106130827A TWI658610B (zh) 2017-09-08 2017-09-08 應用量子點色彩轉換之發光裝置及其製造方法
TW106130827 2017-09-08

Publications (1)

Publication Number Publication Date
KR102102699B1 true KR102102699B1 (ko) 2020-04-23

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KR1020180105689A KR102102699B1 (ko) 2017-09-08 2018-09-05 양자점-기반 색-변환형 발광 디바이스 및 이를 제조하기 위한 방법

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Country Link
JP (1) JP6686081B2 (zh)
KR (1) KR102102699B1 (zh)
TW (1) TWI658610B (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112133718B (zh) * 2019-06-25 2024-02-20 成都辰显光电有限公司 显示面板、显示装置及显示面板的制备方法
WO2021081455A2 (en) * 2019-10-23 2021-04-29 Intematix Corporation High color gamut photoluminescence wavelength converted white light emitting devices
KR102287244B1 (ko) * 2021-03-04 2021-08-06 에스케이씨하이테크앤마케팅(주) 양자점과 유기 나노형광체의 복합 시트 및 이를 포함하는 디스플레이 장치
KR102287241B1 (ko) * 2021-03-04 2021-08-06 에스케이씨하이테크앤마케팅(주) 양자점과 유기 나노형광체의 복합 시트 및 이를 포함하는 디스플레이 장치
WO2023085010A1 (ja) * 2021-11-12 2023-05-19 ソニーグループ株式会社 発光デバイスおよび画像表示装置
CN114709319B (zh) * 2022-04-11 2023-07-11 东莞市中麒光电技术有限公司 色转换结构制作方法、色转换结构、晶粒制作方法及晶粒
EP4180498B1 (en) 2022-06-15 2024-06-05 Avantama AG A color conversion film comprising inorganic separation layer

Citations (4)

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KR20120135999A (ko) * 2011-06-08 2012-12-18 삼성전자주식회사 발광소자 패키지
KR20130017031A (ko) * 2011-08-09 2013-02-19 한국과학기술연구원 백색 발광 다이오드 및 그 제조 방법
KR20160144567A (ko) * 2015-06-08 2016-12-19 삼성전자주식회사 발광소자 패키지, 파장 변환 필름 및 그 제조 방법
KR20170093735A (ko) * 2016-02-05 2017-08-16 마븐 옵트로닉스 씨오., 엘티디. 빔 성형 구조를 가진 발광 디바이스 및 그 제조 방법

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JP5196711B2 (ja) * 2005-07-26 2013-05-15 京セラ株式会社 発光装置およびそれを用いた照明装置
CN103597568B (zh) * 2011-04-01 2016-08-17 纳晶科技股份有限公司 白光发光器件
KR20150004818A (ko) * 2012-03-30 2015-01-13 코닌클리케 필립스 엔.브이. 파장 변환 측면 코트를 갖는 발광 장치
WO2013171610A1 (en) * 2012-05-14 2013-11-21 Koninklijke Philips N.V. Light emitting device with remote nanostructured phosphor
KR20150119179A (ko) * 2013-02-11 2015-10-23 코닌클리케 필립스 엔.브이. 파장 변환 재료의 기밀 밀봉을 가지는 led 모듈
JP6104682B2 (ja) * 2013-04-09 2017-03-29 シチズン電子株式会社 照明装置
JP6428089B2 (ja) * 2014-09-24 2018-11-28 日亜化学工業株式会社 発光装置
JP2016102999A (ja) * 2014-11-14 2016-06-02 富士フイルム株式会社 波長変換部材及びそれを備えたバックライトユニット、液晶表示装置
JP6100831B2 (ja) * 2015-05-26 2017-03-22 シャープ株式会社 発光装置および画像表示装置
JP6020684B1 (ja) * 2015-08-20 2016-11-02 大日本印刷株式会社 光波長変換シート、これを備えるバックライト装置、および画像表示装置
TWI677114B (zh) * 2015-10-05 2019-11-11 行家光電股份有限公司 具導角反射結構的發光裝置
TWI598429B (zh) * 2015-11-30 2017-09-11 隆達電子股份有限公司 波長轉換材料及其應用

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120135999A (ko) * 2011-06-08 2012-12-18 삼성전자주식회사 발광소자 패키지
KR20130017031A (ko) * 2011-08-09 2013-02-19 한국과학기술연구원 백색 발광 다이오드 및 그 제조 방법
KR20160144567A (ko) * 2015-06-08 2016-12-19 삼성전자주식회사 발광소자 패키지, 파장 변환 필름 및 그 제조 방법
KR20170093735A (ko) * 2016-02-05 2017-08-16 마븐 옵트로닉스 씨오., 엘티디. 빔 성형 구조를 가진 발광 디바이스 및 그 제조 방법

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JP6686081B2 (ja) 2020-04-22
TWI658610B (zh) 2019-05-01
JP2019061230A (ja) 2019-04-18

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