KR102101356B1 - 발광소자 및 조명시스템 - Google Patents

발광소자 및 조명시스템 Download PDF

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KR102101356B1
KR102101356B1 KR1020130069663A KR20130069663A KR102101356B1 KR 102101356 B1 KR102101356 B1 KR 102101356B1 KR 1020130069663 A KR1020130069663 A KR 1020130069663A KR 20130069663 A KR20130069663 A KR 20130069663A KR 102101356 B1 KR102101356 B1 KR 102101356B1
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South Korea
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concentration
layer
conductivity type
semiconductor layer
light emitting
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KR20140146839A (ko
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홍기용
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엘지이노텍 주식회사
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Priority to KR1020130069663A priority Critical patent/KR102101356B1/ko
Priority to JP2014123447A priority patent/JP6426377B2/ja
Priority to CN201410270175.4A priority patent/CN104241474B/zh
Priority to US14/307,038 priority patent/US9147811B2/en
Priority to EP14172841.0A priority patent/EP2816615B1/en
Publication of KR20140146839A publication Critical patent/KR20140146839A/ko
Application granted granted Critical
Publication of KR102101356B1 publication Critical patent/KR102101356B1/ko
Assigned to 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 reassignment 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 권리의 전부이전등록 Assignors: 엘지이노텍 주식회사
Assigned to 비오이 에이치씨 세미테크 리미티드 (헝친) reassignment 비오이 에이치씨 세미테크 리미티드 (헝친) 권리의 전부이전등록 Assignors: 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP

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  • Led Devices (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
KR1020130069663A 2013-06-18 2013-06-18 발광소자 및 조명시스템 Active KR102101356B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020130069663A KR102101356B1 (ko) 2013-06-18 2013-06-18 발광소자 및 조명시스템
JP2014123447A JP6426377B2 (ja) 2013-06-18 2014-06-16 発光素子及び照明システム
US14/307,038 US9147811B2 (en) 2013-06-18 2014-06-17 Light emitting device and lighting system
EP14172841.0A EP2816615B1 (en) 2013-06-18 2014-06-17 Light emitting device and lighting system
CN201410270175.4A CN104241474B (zh) 2013-06-18 2014-06-17 发光器件和照明系统

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020130069663A KR102101356B1 (ko) 2013-06-18 2013-06-18 발광소자 및 조명시스템

Publications (2)

Publication Number Publication Date
KR20140146839A KR20140146839A (ko) 2014-12-29
KR102101356B1 true KR102101356B1 (ko) 2020-04-17

Family

ID=51210224

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020130069663A Active KR102101356B1 (ko) 2013-06-18 2013-06-18 발광소자 및 조명시스템

Country Status (5)

Country Link
US (1) US9147811B2 (https=)
EP (1) EP2816615B1 (https=)
JP (1) JP6426377B2 (https=)
KR (1) KR102101356B1 (https=)
CN (1) CN104241474B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11557693B2 (en) 2017-07-31 2023-01-17 Xiamen San'an Optoelectronics Co., Ltd. Semiconductor light emitting device
US10978612B2 (en) 2017-07-31 2021-04-13 Xiamen San'an Optoelectronics Co., Ltd Semiconductor light emitting device
CN107394019B (zh) 2017-07-31 2019-07-12 安徽三安光电有限公司 一种半导体发光元件及其制备方法
CN110379898B (zh) * 2019-05-22 2020-11-17 华灿光电(苏州）有限公司 发光二极管外延片及其生长方法
KR20240112402A (ko) * 2023-01-11 2024-07-19 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011171360A (ja) * 2010-02-16 2011-09-01 Stanley Electric Co Ltd 半導体発光装置及び半導体発光装置の製造方法
WO2012090400A1 (ja) 2010-12-28 2012-07-05 信越半導体株式会社 発光素子

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3164478B2 (ja) * 1994-08-31 2001-05-08 京セラ株式会社 半導体装置およびその製造方法
JP3122324B2 (ja) * 1995-02-20 2001-01-09 三菱電線工業株式会社 半導体発光素子
JPH0945959A (ja) * 1995-07-28 1997-02-14 Toshiba Corp 発光素子
JP3966962B2 (ja) * 1997-10-16 2007-08-29 スタンレー電気株式会社 発光ダイオード及びその製造方法
JP2000174338A (ja) * 1998-12-02 2000-06-23 Matsushita Electric Ind Co Ltd 窒化ガリウム系化合物半導体発光素子
US6608328B2 (en) * 2001-02-05 2003-08-19 Uni Light Technology Inc. Semiconductor light emitting diode on a misoriented substrate
TWI231053B (en) * 2003-02-10 2005-04-11 Showa Denko Kk Semiconductor light emitting device and the manufacturing method thereof
JP4255710B2 (ja) * 2003-02-10 2009-04-15 昭和電工株式会社 半導体発光素子
US7528417B2 (en) 2003-02-10 2009-05-05 Showa Denko K.K. Light-emitting diode device and production method thereof
JP2007042751A (ja) * 2005-08-01 2007-02-15 Hitachi Cable Ltd 半導体発光素子
JP5018433B2 (ja) * 2007-11-30 2012-09-05 日立電線株式会社 半導体発光素子用エピタキシャルウェハ及び半導体発光素子
US8399948B2 (en) * 2009-12-04 2013-03-19 Lg Innotek Co., Ltd. Light emitting device, light emitting device package and lighting system
KR101028286B1 (ko) * 2009-12-28 2011-04-11 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR101028251B1 (ko) * 2010-01-19 2011-04-11 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
JP2011222950A (ja) * 2010-03-24 2011-11-04 Showa Denko Kk 発光ダイオード
KR20120103817A (ko) 2011-03-11 2012-09-20 서울옵토디바이스주식회사 발광 다이오드 제조 방법
JP2013042082A (ja) * 2011-08-19 2013-02-28 Hitachi Cable Ltd 半導体発光素子

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011171360A (ja) * 2010-02-16 2011-09-01 Stanley Electric Co Ltd 半導体発光装置及び半導体発光装置の製造方法
WO2012090400A1 (ja) 2010-12-28 2012-07-05 信越半導体株式会社 発光素子
US20130270520A1 (en) 2010-12-28 2013-10-17 Shin-Etsu Handotai Co., Ltd. Light-emitting device

Also Published As

Publication number Publication date
EP2816615A1 (en) 2014-12-24
CN104241474A (zh) 2014-12-24
US9147811B2 (en) 2015-09-29
EP2816615B1 (en) 2019-09-11
KR20140146839A (ko) 2014-12-29
JP2015005745A (ja) 2015-01-08
JP6426377B2 (ja) 2018-11-21
CN104241474B (zh) 2017-11-14
US20140367715A1 (en) 2014-12-18

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