KR102061093B1 - 동심 유동 반응기 - Google Patents

동심 유동 반응기 Download PDF

Info

Publication number
KR102061093B1
KR102061093B1 KR1020147035424A KR20147035424A KR102061093B1 KR 102061093 B1 KR102061093 B1 KR 102061093B1 KR 1020147035424 A KR1020147035424 A KR 1020147035424A KR 20147035424 A KR20147035424 A KR 20147035424A KR 102061093 B1 KR102061093 B1 KR 102061093B1
Authority
KR
South Korea
Prior art keywords
delete delete
inlet
gas
nanowires
reactor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020147035424A
Other languages
English (en)
Korean (ko)
Other versions
KR20150013319A (ko
Inventor
그레그 알코트
마르틴 마그너손
올리비에르 포스텔
크너트 데페르트
라르스 사무엘손
요나스 올손
Original Assignee
솔 발테익스 에이비
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 솔 발테익스 에이비 filed Critical 솔 발테익스 에이비
Publication of KR20150013319A publication Critical patent/KR20150013319A/ko
Application granted granted Critical
Publication of KR102061093B1 publication Critical patent/KR102061093B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/14Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/006Controlling or regulating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502Flow conditions in reaction chamber
    • C23C16/45504Laminar flow
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519Inert gas curtains
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003Heating or cooling of the melt or the crystallised material
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12Vaporous components, e.g. vapour-liquid-solid-growth
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/007Growth of whiskers or needles
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005Growth of whiskers or needles
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/025Continuous growth
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/06Silicon
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/40AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/40AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403AIII-nitrides
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/40AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42Gallium arsenide
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/62Whiskers or needles
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10Apparatus
    • Y10T117/102Apparatus for forming a platelet shape or a small diameter, elongate, generally cylindrical shape [e.g., whisker, fiber, needle, filament]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Recrystallisation Techniques (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020147035424A 2012-05-25 2013-05-24 동심 유동 반응기 Active KR102061093B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261651724P 2012-05-25 2012-05-25
US61/651,724 2012-05-25
PCT/SE2013/050594 WO2013176619A1 (en) 2012-05-25 2013-05-24 Concentric flow reactor

Publications (2)

Publication Number Publication Date
KR20150013319A KR20150013319A (ko) 2015-02-04
KR102061093B1 true KR102061093B1 (ko) 2019-12-31

Family

ID=48576493

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020147035424A Active KR102061093B1 (ko) 2012-05-25 2013-05-24 동심 유동 반응기

Country Status (6)

Country Link
US (4) US9574286B2 (enExample)
EP (1) EP2855742B1 (enExample)
JP (1) JP6219933B2 (enExample)
KR (1) KR102061093B1 (enExample)
CN (2) CN107740070A (enExample)
WO (1) WO2013176619A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2297794B1 (en) 2008-07-07 2017-09-06 Glo Ab Nanostructured light emitting diode
CN107740070A (zh) 2012-05-25 2018-02-27 索尔伏打电流公司 同心流反应器
US9951420B2 (en) * 2014-11-10 2018-04-24 Sol Voltaics Ab Nanowire growth system having nanoparticles aerosol generator
WO2016146715A1 (en) 2015-03-16 2016-09-22 Sol Voltaics Ab Method and apparatus for nanowire film production
WO2019101854A1 (en) * 2017-11-22 2019-05-31 Basf Se Zeolite synthesis in a reactor with controlled velocity profile
KR102104093B1 (ko) * 2018-06-28 2020-04-24 뉴고 디자인 스튜디오 마이크로미터 led의 에피택셜용 직립 통기둥형 반응챔버 및 선형 발광체의 제조 방법
CN110112060A (zh) * 2019-05-20 2019-08-09 山东大学 一种利用气固固生长模式控制高性能ⅲ-ⅴ族半导体纳米线生长方向的方法
EP3822395A1 (en) 2019-11-13 2021-05-19 Fundación Imdea Materiales Nanowires network
CN113088928A (zh) * 2019-12-23 2021-07-09 上海思擎企业管理合伙企业(有限合伙) 内筒壁吹扫装置
MX2023013090A (es) 2021-05-06 2023-12-14 Fundacion Imdea Mat Red de nanohilos.
US20230221178A1 (en) * 2022-01-11 2023-07-13 Modulight Corporation Apparatus and a method for fluorescence imaging
CN116463627B (zh) * 2023-04-18 2024-03-15 陕西科技大学 一种磷化铟纳米线及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005041752A (ja) * 2003-07-25 2005-02-17 Nikkiso Co Ltd 内部加熱体装備反応管装置
JP2007504081A (ja) * 2003-08-28 2007-03-01 ケープ シミュレイションズ, インコーポレイテッド 高純度結晶成長
JP2007527844A (ja) 2004-03-09 2007-10-04 カナトゥ オイ 単層、多層、機能化及びドープ処理カーボンナノチューブ、並びにそれらの複合物
WO2011142717A1 (en) * 2010-05-11 2011-11-17 Qunano Ab Gas-phase synthesis of wires

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6054041A (en) 1998-05-06 2000-04-25 Exxon Research And Engineering Co. Three stage cocurrent liquid and vapor hydroprocessing
US6179913B1 (en) * 1999-04-16 2001-01-30 Cbl Technologies, Inc. Compound gas injection system and methods
US7301199B2 (en) 2000-08-22 2007-11-27 President And Fellows Of Harvard College Nanoscale wires and related devices
DE10048759A1 (de) * 2000-09-29 2002-04-11 Aixtron Gmbh Verfahren und Vorrichtung zum Abscheiden insbesondere organischer Schichten im Wege der OVPD
US6872645B2 (en) * 2002-04-02 2005-03-29 Nanosys, Inc. Methods of positioning and/or orienting nanostructures
US7335908B2 (en) * 2002-07-08 2008-02-26 Qunano Ab Nanostructures and methods for manufacturing the same
US7534488B2 (en) 2003-09-10 2009-05-19 The Regents Of The University Of California Graded core/shell semiconductor nanorods and nanorod barcodes
CN1745468B (zh) * 2002-09-30 2010-09-01 纳米系统公司 大面积纳米启动宏电子衬底及其用途
CN1314585C (zh) 2003-05-16 2007-05-09 华东理工大学 利用辅助燃烧反应器制备纳米二氧化硅的方法
US7115230B2 (en) 2003-06-26 2006-10-03 Intel Corporation Hydrodynamic focusing devices
AU2005230961B2 (en) 2004-01-15 2010-11-11 Nanocomp Technologies, Inc. Systems and methods for synthesis of extended length nanostructures
US20050230240A1 (en) 2004-03-09 2005-10-20 Roman Dubrovsky Method and apparatus for carbon allotropes synthesis
PL1695759T3 (pl) 2005-01-31 2008-09-30 Basf Se Sposób wytwarzania substancji stałych w postaci nanocząstek
JP4682202B2 (ja) 2005-07-15 2011-05-11 パナソニック株式会社 高圧放電ランプの点灯方法、点灯装置、光源装置及び投射型画像表示装置
JP4689404B2 (ja) 2005-08-15 2011-05-25 キヤノン株式会社 基板処理装置及びこれを用いた基板の処理方法、電子源基板の処理装置及びこれを用いた電子源基板の処理方法
CN1850598B (zh) 2006-02-28 2011-02-09 华东理工大学 一种核壳式TiO2/SiO2纳米复合颗粒的制备方法和设备
CN1810640A (zh) 2006-02-28 2006-08-02 华东理工大学 弥散相TiO2/SiO2纳米复合颗粒的制备方法和设备
GB2436398B (en) * 2006-03-23 2011-08-24 Univ Bath Growth method using nanostructure compliant layers and HVPE for producing high quality compound semiconductor materials
WO2008085129A1 (en) 2007-01-12 2008-07-17 Qunano Ab Nitride nanowires and method of producing such
KR101541560B1 (ko) 2007-10-26 2015-08-03 큐나노 에이비 이종 재료상의 나노와이어 성장
US7998250B2 (en) 2008-10-03 2011-08-16 B/E Aerospace, Inc. Multiple vortex waste separator apparatus
US8563325B1 (en) * 2009-09-29 2013-10-22 Sandia Corporation Coaxial microreactor for particle synthesis
CN102770367B (zh) 2009-12-22 2015-08-19 昆南诺股份有限公司 用于制备纳米线结构的方法
WO2011137446A2 (en) 2010-04-30 2011-11-03 University Of Southern California Fabrication of silicon nanowires
GB201008142D0 (en) 2010-05-14 2010-06-30 Imp Innovations Ltd Device comprising graphene oxide film
CN102320594B (zh) 2011-09-02 2013-02-27 中国科学院金属研究所 氧辅助浮动催化剂直接生长半导体性单壁碳纳米管的方法
EP2837035A2 (en) 2012-04-12 2015-02-18 Sol Voltaics AB Methods of nanowire functionalization, dispersion and attachment
CN107740070A (zh) 2012-05-25 2018-02-27 索尔伏打电流公司 同心流反应器

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005041752A (ja) * 2003-07-25 2005-02-17 Nikkiso Co Ltd 内部加熱体装備反応管装置
JP2007504081A (ja) * 2003-08-28 2007-03-01 ケープ シミュレイションズ, インコーポレイテッド 高純度結晶成長
JP2007527844A (ja) 2004-03-09 2007-10-04 カナトゥ オイ 単層、多層、機能化及びドープ処理カーボンナノチューブ、並びにそれらの複合物
WO2011142717A1 (en) * 2010-05-11 2011-11-17 Qunano Ab Gas-phase synthesis of wires

Also Published As

Publication number Publication date
US20210130979A1 (en) 2021-05-06
US20170198409A1 (en) 2017-07-13
JP2015528780A (ja) 2015-10-01
WO2013176619A1 (en) 2013-11-28
EP2855742A1 (en) 2015-04-08
US10196755B2 (en) 2019-02-05
US10920340B2 (en) 2021-02-16
US9574286B2 (en) 2017-02-21
CN104508190A (zh) 2015-04-08
US11702761B2 (en) 2023-07-18
KR20150013319A (ko) 2015-02-04
JP6219933B2 (ja) 2017-10-25
US20200032416A1 (en) 2020-01-30
US20150152570A1 (en) 2015-06-04
CN104508190B (zh) 2017-12-15
EP2855742B1 (en) 2016-12-14
CN107740070A (zh) 2018-02-27

Similar Documents

Publication Publication Date Title
KR102061093B1 (ko) 동심 유동 반응기
US9951420B2 (en) Nanowire growth system having nanoparticles aerosol generator
US10036101B2 (en) Gas-phase synthesis of epitaxial semiconductor wires from seed crystals
Hauge et al. Single-crystalline hexagonal silicon–germanium
Li et al. Self-catalyzed growth of InAs nanowires on InP substrate
Sivakumar et al. Aerotaxy: gas-phase epitaxy of quasi 1D nanostructures
WO2013114218A2 (en) High-throughput continuous gas-phase synthesis of nanowires with tunable properties
Zeghouane et al. Selective area growth of GaAs nanowires and microplatelet arrays on silicon by hydride vapor-phase epitaxy
HK1245852A1 (en) Concentric flow reactor
HK1236586A1 (en) Nanowire growth system having nanoparticles aerosol generator
HK1237004A1 (zh) 线的气相合成
HK1237004A (en) Gas-phase synthesis of wires
CN121177996A (zh) 工艺设备及其气体预混合装置与气体预混合方法

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20141217

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
A302 Request for accelerated examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20180521

Comment text: Request for Examination of Application

PA0302 Request for accelerated examination

Patent event date: 20180521

Patent event code: PA03022R01D

Comment text: Request for Accelerated Examination

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20180914

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20190429

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20191224

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20191224

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20221207

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20240620

Start annual number: 5

End annual number: 5