KR102053000B1 - Thermoelectric module and apparatus for testing temperature using the same - Google Patents

Abstract

In order to control the temperature more efficiently and quickly, the memory module includes a cold and hot unit for applying cold and hot energy, the cold and cold unit is a thermoelectric element for generating cold and hot energy, is installed on one surface of the thermoelectric element is cold air or A heat transfer block for applying heat, and a heat dissipation unit disposed on the other surface of the thermoelectric element, the heat dissipation unit configured to perform heat transfer with the thermoelectric element, wherein the thermoelectric element includes a plurality of semiconductors spaced apart from each other and a pattern set at the top and bottom of the semiconductor A semiconductor unit including a top electrode and a bottom electrode disposed to be electrically connected to the semiconductor, a first heat transfer plate and a second heat transfer plate bonded to an outside of the semiconductor unit, and a tip between the first heat transfer plate and the second heat transfer plate; And a sealing member sealing the inside to seal the inside, wherein the semiconductor unit includes a first heat transfer plate and a second heat seal. Provides a mobile memory module, temperature check of the plurality of the layered structure between dalpan device.

Description

Thermoelectric element and temperature tester using same {THERMOELECTRIC MODULE AND APPARATUS FOR TESTING TEMPERATURE USING THE SAME}

A temperature testing device for checking temperature reliability of a memory module and a thermoelectric element used in the device are disclosed.

In general, a large amount of random access memory (RAM) is used for a computer, a mobile phone, and a solid state disk (SSD).

As devices become smaller and smaller, RAM used as memory is becoming smaller and more integrated. A plurality of RAMs are integrated to form one memory module.

Since the memory module is used in various conditions and may be defective due to self-heating, the temperature reliability test is performed before shipping the product. Increasingly, as semiconductors are highly integrated, self-heating also increases, making temperature reliability a very important test.

Korean Patent No. 10-1396539 discloses a conventional memory module temperature test apparatus developed and patented by the present applicant.

In recent years, as a faster test is required, the number of memory modules to be tested at one time is increasing. Accordingly, as the system becomes larger and the power consumption increases, there is a demand for the development of a device capable of miniaturization, low power, and high speed temperature inspection.

Provided are a thermoelectric device and a temperature inspection device using the same, which allow temperature control to be more efficiently and quickly.

It provides a thermoelectric element and a temperature inspection device using the same that can be reduced in size by miniaturizing the device.

Provided is a thermoelectric element and a temperature inspection device using the same, which can improve a temperature drop rate.

The temperature inspecting apparatus of the present embodiment includes a cold / hot unit for applying cold / hot energy to a test object, and the cold / hot unit is a thermoelectric element generating cold / hot energy, and is installed on one surface of the thermoelectric element to apply heat or cold to the test object. Blocks, and may be provided on the other surface of the thermoelectric element may include a heat dissipation unit for the heat transfer with the thermoelectric element.

The cold and hot unit includes a fixing bolt for fastening and fastening between the thermoelectric element and the heat dissipation unit disposed on both sides of the thermoelectric element and the heat transfer block, and the fixing bolt passes through the fastening hole formed in the front surface of the thermoelectric element and the heat dissipation unit; It can be fastened between the heat transfer blocks.

The thermoelectric device may include a plurality of semiconductors arranged at intervals, a semiconductor unit including a top electrode and a bottom electrode disposed in a pattern set at upper and lower ends of the semiconductor and electrically connected to the semiconductor, and bonded to the outside of the semiconductor unit. A first heat transfer plate and a second heat transfer plate, and a sealing member sealing the inside of the first heat transfer plate and the second heat transfer plate by sealing the inside thereof, wherein the semiconductor unit includes a first heat transfer plate and a second heat transfer plate. A plurality of layers may be stacked in between, and an intermediate heat transfer plate may be installed between each semiconductor unit.

Each semiconductor unit may have the same number of semiconductors.

Each of the semiconductor units may have the same structure of semiconductor array positions.

The size of the semiconductor of each semiconductor unit may gradually decrease from the first heat transfer plate to the second heat transfer plate.

The semiconductor of each semiconductor unit may have a structure in which each height gradually decreases from the first heat transfer plate to the second heat transfer plate.

In the thermoelectric element, at least one fastening hole may be formed between the first heat transfer plate and the second heat transfer plate.

Moisture-proof paint is applied to the side of the semiconductor may be a structure to form a coating layer.

The coating layer may be formed on inner surfaces of the upper electrode and the lower electrode connected to the semiconductor.

The coating constituting the coating layer may be a carbon-based organic paint or a carbon-based inorganic paint.

The sealing member may be installed between the semiconductor and the semiconductor in the thermoelectric element.

The sealing member may be made of an epoxy material including silicon particles.

The silicon particles may be included within 2 to 20% by weight based on the entire sealing member.

The heat dissipation unit may include a water cooling jacket in which cooling water is circulated.

The cold and hot unit further includes a fixing bolt for fastening and fixing the heat dissipation unit and the heat transfer block disposed on both sides of the thermoelectric element and the thermoelectric element, and the fixing bolt passes through the fastening hole formed in the front surface of the thermoelectric element and the heat transfer unit. It may be a structure that is fastened between the blocks.

The cold / hot unit may include at least two thermoelectric elements, and each thermoelectric element may be stacked.

Each thermoelectric element may have the same size.

Each thermoelectric device may have the same number of semiconductors.

Each thermoelectric device may have a structure in which the arrangement of semiconductors provided therein is the same.

Each thermoelectric device may have a structure in which the size of the semiconductor gradually decreases from the first heat transfer plate to the second heat transfer plate.

Each thermoelectric element may have a structure in which the height of each semiconductor gradually decreases from the first heat transfer plate to the second heat transfer plate.

Each thermoelectric element may have at least one fastening hole formed therebetween between the first heat transfer plate and the second heat transfer plate.

The cold unit may further include an intermediate thermal block installed between the thermoelectric elements.

The heat transfer block may further include a suction hole formed in an inspection surface and a vacuum line extending inward through a side surface of the heat transfer block and connected to the suction hole to apply a vacuum suction force to the inspection surface.

The cold / hot unit may further include a temperature sensor installed in the heat transfer block to detect a temperature applied to the memory module.

The temperature inspection apparatus may further include a housing surrounding the cold / hot unit, a buffer unit for buffering shock transmitted to the cold / hot unit by elastically flowing the cold / hot unit with respect to the housing.

The shock absorbing portion is installed in the lower end of the housing and the heat insulating block formed with a hole into which the end of the heat transfer block is inserted, the connection bolt is inserted into the through hole formed in the heat insulating block and installed in the heat transfer block, the connection bolt is inserted into the heat insulating block and It may include an elastic spring that is elastically installed between the heat transfer block.

 The housing may further include a pressing unit for closely contacting the cold / hot unit with a test object.

The pressing part is screwed to the upper end of the housing and the pressure bolt protruding into the housing, the rotary handle is formed integrally on the upper end of the pressure bolt to rotate the pressure bolt, is installed in the housing and connected to the pressure bolt to pressurize the cold and hot unit The pressure plate, the guide groove is formed on the inner surface of the housing, it may include a guide protrusion which is formed to protrude on the side of the cold and hot unit is moved along the guide groove.

It may further include a fixing part for fixing the housing.

The fixing part may include a holder plate installed on a work table on which the test object is to be placed, a lever member rotatably installed at a lower end of the housing, and a latch formed on the lever member and detachably coupled to a locking jaw of the side of the holder plate. Can be.

The inspection apparatus may have a structure in which a supply line penetrates into the hole through a side surface of the insulating block and supplies clean air to an inspection space inside the hole through the supply line.

As described above, according to the present embodiment, by stacking semiconductors in one thermoelectric element in multiple layers, temperature can be controlled more quickly and effectively. Thus, the rapid temperature drop can reduce the inspection time of the memory module and increase productivity.

In addition, since the structure is simpler, assembling and fastening is easy, and lower temperature can be realized at low power without increasing the size of the thermoelectric element.

In addition, it is possible to prevent the decrease in strength without increasing the size of the thermoelectric element. As a result, the stiffness of the thermoelectric element may be increased, and the thermoelectric element may be closely pressed at a greater pressure, thereby maximizing the heat transfer efficiency.

In addition, as the structural rigidity of the thermoelectric element is secured, the bolt can be fastened through the thermoelectric element, thereby making the device more compact.

1 to 3 are exploded perspective views showing the configuration of the temperature inspection device according to the present embodiment.
4 is a schematic cross-sectional view showing the assembled state of the temperature inspection apparatus according to the present embodiment.
5 is a schematic cross-sectional view showing a heat transfer block of the temperature inspection device according to the present embodiment.
6 is an exploded perspective view of a thermoelectric device according to the present embodiment.
7 is a partially cutaway perspective view of the thermoelectric device according to the present embodiment.
8 is a schematic cross-sectional view of a thermoelectric element according to the present embodiment.
9 to 13 is a schematic cross-sectional view showing various embodiments of the cold unit of the temperature inspection device.

Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. As those skilled in the art can easily understand, the embodiments described below may be modified in various forms without departing from the concept and scope of the present invention. Where possible, the same or similar parts are represented with the same reference numerals in the drawings.

The terminology used below is merely to refer to specific embodiments, and is not intended to limit the present invention. As used herein, the singular forms “a,” “an,” and “the” include plural forms as well, unless the phrases clearly indicate the opposite. As used herein, the meaning of "comprising" embodies a particular property, region, integer, step, operation, element, and / or component, and other specific properties, region, integer, step, operation, element, component, and / or group. It does not exclude the presence or addition of.

All terms including technical terms and scientific terms used below have the same meaning as those commonly understood by those skilled in the art. Terms defined in advance are additionally interpreted to have a meaning consistent with the related technical literature and the presently disclosed contents, and are not interpreted in an ideal or very formal sense unless defined.

Hereinafter, an example of a temperature test apparatus for inspecting a memory module (hereinafter, referred to as a memory module) equipped with a mobile RAM used in a mobile phone or the like as a test object will be described. Of course, the apparatus is not limited to the test object, and all of the memory modules used in the various apparatuses may be applicable.

1 to 3 show an exploded view of the configuration of the temperature inspecting apparatus according to the present embodiment, and FIG. 4 shows a combined cross-sectional state of the temperature inspecting apparatus.

As shown, the inspection apparatus 1 according to the present embodiment may include a cold unit 100 for applying cold and hot energy to the memory module (M). Therefore, the inspection apparatus 1 applies temperature heat or cold heat to the memory module M placed in the inspection space through the cold temperature unit 100 to perform the temperature reliability test.

The cold / hot unit 100 is installed on one surface of the thermoelectric element 10 generating the cold / hot energy, the heat transfer block 40 to apply cold or heat to the memory module M, and the thermoelectric element 10. It is installed on the other side of the thermoelectric element 10 and may include a heat dissipation unit 50 to the heat transfer.

The housing 200 is installed outside the cold unit 100. The housing 200 forms an outer shape of the inspection device 1 and surrounds and protects the cold / hot unit 100. The housing 200 is formed in a rectangular box shape, and the cold / hot unit 100 is coupled to be movable up and down therein. The lower end of the housing 200 is opened so that the heat transfer block 40 of the cold / hot unit is exposed to the outside. The housing 200 may be formed of a single member or two members separated along the vertical direction. Hereinafter, the up and down direction means the up and down in the y-axis direction in FIG. For convenience of explanation, a structure in which an inspection is performed by placing the memory module M as an inspection object below the y-axis direction will be described as an example. The shape of the housing can be variously modified.

The temperature inspecting apparatus 1 may further include a shock absorber for cushioning the shock transmitted to the cold / hot unit by elastically flowing the cold / hot unit 100 with respect to the housing 200.

The buffer part absorbs the impact energy generated during the inspection of the memory module M, and closely closes the end 43 of the heat transfer block 40 to the memory module M. FIG. Thus, it is possible to prevent damage to the device or the memory module due to the flow, and to maximize the heat transfer efficiency between the heat transfer block and the memory module.

In the present embodiment, the shock absorbing portion is installed in the lower end of the housing 100, the heat insulating block 210, the through-hole formed in the heat insulating block 210, the heat insulating block 210 is formed with a hole 212 is inserted into the end 43 of the heat transfer block 40 ( 214 is inserted into the connection bolt 216 installed in the heat transfer block 40, the elastic spring is inserted into the connection bolt 216 elastically installed between the heat insulating block 210 and the heat transfer block 40 (218 of FIG. 4). Reference).

As shown in FIG. 1, the insulating block 210 is disposed at the bottom of the apparatus and is connected to the heat transfer block 40.

 The heat insulation block 210 is formed of a rectangular plate structure having a predetermined thickness, and a hole 212 through which the end 43 of the heat transfer block 40 is inserted is formed. Through the hole 212, the end 43 of the heat transfer block penetrates through the insulating block to come into contact with the memory module M disposed below. The insulation block 210 wraps around the memory module M and the end 43 of the heat transfer block to block heat transfer to the outside air and insulate the inside. The insulation block 210 may be made of a material having excellent insulation performance and rigidity. In the present embodiment, the insulating block 210 may be made of a bakelite material.

Four through holes 214 are formed at four corners of the insulating block 210.

As shown in FIG. 4, the connecting bolt 216 is inserted into the through hole 214 and fastened to the lower end of the heat transfer block 40. And the elastic spring 218 is fitted to the connecting bolt 216 is elastically installed between the heat insulating block 210 and the heat transfer block (40). Thus, the heat transfer block 40 and the insulating block 210 are elastically connected to each other via the elastic spring 218. Accordingly, the elastic spring 218 absorbs the impact energy to cushion the two members against external shock, and the end of the heat transfer block can be brought into close contact with the memory module.

The device of the present embodiment may have a structure for supplying clean dry air (CDA) into the hole 212 of the insulating block 210. To this end, the heat insulating block 210 is formed through the supply line 219 through the side of the hole 212. Thus, clean air supplied from the outside may be supplied to the inspection space inside the hole through the supply line. Clean air is dried air that is free of moisture, and is supplied to the space where the inspection is performed through the supply line of the insulation block. Accordingly, clean air can be prevented from occurring in the inspection space, including between the heat transfer block and the memory module.

In addition, the temperature inspection device may further include a fixing portion for fixing the device on the workbench to be inspected. The fixing part is installed in the housing to detachably fix the housing to which the cold / hot unit is coupled to the inspection position.

In the present embodiment, the fixing part is formed on the holder plate 220 installed on the work table on which the test object is to be placed, the lever member 222 rotatably installed at the lower end of the housing 200, and the holder plate 222. 220 may include a latch 225 detachably coupled to the locking jaw 224 of the side.

As shown in FIG. 2, the holder plate 220 is fixedly installed at a work position on a work table separately from the temperature tester 1. Holder plate 220 is a rectangular plate structure, the hole 221 is formed in the center so that the memory module (M) can be placed. The memory module M is placed in the hole 221 and the heat transfer block end 43 of the cold / hot unit is closely attached to the memory module to apply cold / hot energy. Hanging jaws 224 are formed at opposite side ends of the holder plate 220. The locking jaw 224 is a part to which the latch 225 of the lever member 222 provided in the temperature tester is caught and fixed.

The lever member 222 is pivotally coupled to the housing 200. In the present embodiment, as shown in FIG. 2, the lever member 222 is rotatably installed with respect to the housing 200 via a separate bracket 228 installed in the housing 200. That is, the bracket 228 is installed on the lower side of the housing 200, and the lever member 222 is pivotally coupled to the lower end of the bracket 228 via the rotation shaft 227.

The lever member 222 has a lower end bent inward about the pivot shaft 227 to form a latch 225 that is caught on the locking jaw 224 and the upper end extends outward to rotate the lever member 222 ( 226). The rotating shaft 227 of the lever member 222 may be further provided with a return spring (not shown) for returning to the original position when the lever member 222 is rotated. In this way, the lever member 222 can be operated more easily to easily mount and detach the device.

As shown in FIG. 4, when a force is applied to a portion of the upper handle 226 of the lever member 222, the lever member 222 is rotated about the rotation shaft 227 to latch the lower portion 225. Is caught or released from the locking jaw 224. Therefore, the housing 200 in which the lever member 222 is installed can be fixed or detached to the holder plate 220 installed on the work table.

In addition, the temperature tester 1 may further include a pressurizing unit for closely contacting the cold / hot unit 100 with the test object with respect to the housing 200. As the cold unit is pressed by the pressurizing unit, the end 43 of the heat transfer block 40 located at the lower end of the cold unit may be pressed against the memory module M to be in close contact with each other. Thus, the heat transfer efficiency can be further increased.

As shown in Figure 4, the pressing portion of the present embodiment is screwed to the upper end of the housing 200 and the pressure bolt 230, protruding into the housing 200, integrally formed on the upper end of the pressure bolt 230 pressure bolt ( Rotation handle 232 for rotating the 230, the pressure plate 234 is installed inside the housing 200 and connected to the pressure bolt 230 to press the cold unit 100, guide grooves formed on the inner surface of the housing 200 236, it may include a guide protrusion 238 is formed to protrude on the side of the cold and hot unit is moved along the guide groove.

The cold / warm unit 100 is separated from the housing 200 so as to be able to flow up and down within the housing 200. Thus, when the housing 200 is pressed down on the cold / hot unit 100 while the housing 200 is fixed to the work table, the heat transfer block 40 of the cold / hot unit may be pressed against the memory module M to increase the adhesion.

A female screw hole 231 is formed at the upper end of the housing 200. The pressure bolt 230 is screwed into the female screw hole 231 of the housing 200 is installed into the housing 200. The inside of the housing 200 is provided with a pressure plate 234 is placed on the upper end of the cold unit 100. Accordingly, when the rotary handle 232 is turned, the pressing bolt 230 is pressed against the female screw hole 231 of the housing 200 while pressing the pressing plate 234. The pressure plate 234 presses the cold unit 100 to push the cold unit 100 down against the housing 200. Thus, the cold end unit 100 is pressed down while the end 43 of the heat transfer block is in close contact with the memory module (M).

In the present embodiment, in the process of pressing and moving the cold and hot unit 100 with respect to the housing 200, the cold and hot unit 100 by the guide groove 236 and the guide protrusion 238 to move in a vertical position exactly without inclination It becomes possible.

The guide groove 236 extends in a direction perpendicular to the inner circumferential surface of the housing 200. The guide grooves 236 may be formed at four inner circumferential surfaces of the housing 200. In the cold and warm unit 100, a guide protrusion 238 is inserted into the guide groove 236 at a position corresponding to the guide groove 236 is formed. The guide protrusion 238 may be formed at, for example, the heat dissipation unit 50 of the cold / hot unit.

Thus, as the guide protrusion 238 of the cold and hot unit is guided by being inserted into the guide groove 236 of the housing 200, the cold and hot unit 100 can move exactly vertically without being inclined or flowing with respect to the housing 200. . Therefore, the end of the heat transfer block of the cold / warm unit can be in close contact with the memory module without tilting.

The heat transfer block 40 is in close contact with the memory module M to apply cold or warm heat to the memory module M. FIG.

As shown in FIG. 5, in the present embodiment, the heat transfer block 40 may include a plate portion 41 in contact with the thermoelectric element 10 and an end portion 43 extending downward from the plate portion and in contact with the memory module. have. The end 43 extends downward from the center of the plate portion 41 and may be formed to have a size substantially corresponding to the memory module. The plate portion and the end are formed integrally. The thick part is integrally formed in the shape of an arc between the plate part and the end part. As a result, more smooth thermal conduction is achieved between the plate portions and the end portions having different areas.

The end 43 may be further formed with a plurality of slits on the surface to further increase the heat transfer efficiency. The slit can reduce the heat capacity by reducing the cross-sectional area of the end. Faster heat transfer can thus minimize the energy required for end cooling and heating.

A female screw hole 42 for fastening the bolt is formed at the center of the heat transfer block 40. The female screw hole 42 is for assembling a cold and hot unit, and a fixing bolt 62 to be described below is fastened through the thermoelectric element 10.

In addition, the heat transfer block 40 further includes a suction hole 45 formed on the inspection surface and a vacuum line 47 extending inwardly through the side surface of the heat transfer block 40 and connected to the suction hole 45. It may be a structure that applies a vacuum suction force to the inspection surface. The vacuum line 47 may be connected to a vacuum pump disposed outside to form a vacuum pressure.

For example, the vacuum line 47 may extend to the end portion 43 through the side of the plate portion 41 of the heat transfer block. A plurality of suction holes 45 connected to the vacuum line 47 may be formed at the front of the end 43. Therefore, when the end 43 of the heat transfer block is in contact with the memory module M, the vacuum pressure is applied through the vacuum line 47 so that the memory module M is attracted to the end 43. As such, the end of the heat transfer block is more effectively in close contact with the memory module by the adsorption force, and thus the heat transfer efficiency can be increased.

At the end 43 of the heat transfer block, a temperature sensor 44 for detecting a temperature applied to the memory module M may be further installed. The hole 49 for mounting the temperature sensor is deeply formed at the lower end of the end 43 for installing the temperature sensor 44. Accordingly, the temperature sensor 44 is installed as close as possible to the memory module M in the hole 49 to accurately detect the temperature of the cold and hot heat applied to the memory module through the end 43.

In the present embodiment, the heat dissipation unit 50 may include a water cooling jacket 52 through which cooling water is circulated. The water cooling jacket 52 is connected with a supply unit 54 for circulating and supplying cooling water. Thus, the cooling water circulates from the supply part 54 into the water cooling jacket 52 to dissipate the other surface of the thermoelectric element 10. Reference numeral 53 is a cover that covers the upper end of the water cooling jacket 52.

The heat dissipation unit 50 is not limited to the water cooling jacket 52, for example, a heat dissipation structure of a blowing method having a heat dissipation fin and a heat dissipation fan for supplying external air to the heat dissipation fin may be applied.

In the cold unit 100, the water cooling jacket 52 and the heat transfer block 40 are disposed on the top and the bottom of the thermoelectric element 10 along the y-axis direction of FIG. 4, and are closely coupled to each other.

The cold unit 100 of the present embodiment has a structure in which the fixing bolt 62 is fastened to the center to pressurize and fix the water cooling jacket 52, the thermoelectric element 10, and the heat transfer block 40. For example, a hole 56 into which the fixing bolt 62 is inserted is formed in the water cooling jacket 52 located above, and the fixing bolt 62 is disposed at a position corresponding to the hole 56 in the heat transfer block 40. A female screw hole 42 to which is fastened is formed. In addition, the thermoelectric element 10 also has a fastening hole 12 through which the fixing bolt 62 penetrates at a position corresponding to the hole 56. Accordingly, the fixing bolt 62 is fastened by tightening the fixing bolt 62 to the female threaded hole 42 of the heat transfer block 40 through the hole 56 and the fastening hole 12, thereby cooling the thermoelectric element 10 with the water cooling jacket 52 and heat transfer. It can be assembled by pressing close to the block 40.

As such, the fixing bolt 62 is mounted at the center portion of the cold / hot unit 100, so that the size of the cold / hot unit 100 may be smaller than in the related art.

In the conventional case, the water cooling jacket and the heat transfer block were fastened at a position away from the thermoelectric device for the durability and efficiency of the thermoelectric device. Therefore, it was necessary to form the size of the water cooling jacket and the heat transfer block sufficiently larger than the thermoelectric element. On the contrary, as mentioned in the present embodiment, since the fixing bolt 62 penetrates the center portion of the thermoelectric element 10, the size of the water cooling jacket 52 and the heat transfer block 40 is determined by the size of the thermoelectric element 10. It can be reduced, and the size of the overall device can be made smaller. The detailed structure and operation of the thermoelectric element 10 will be described later.

The cold / hot unit 100 of the present embodiment is connected to a temperature sensor 44 installed in the heat transfer block 40 so as to control the cold / hot energy applied to the memory module M, and according to the output value of the temperature sensor. 10 may further include a control unit 46 for controlling.

The controller 46 controls the thermoelectric element 10 by applying a current required to the thermoelectric element 10 by calculating the detection value of the temperature sensor 44. Thus, by checking the temperature applied to the memory module M in real time through the temperature sensor 44 to control the thermoelectric element 10, it is possible to perform a more accurate test.

A thermoelectric module is a device that creates a temperature difference through a voltage difference by using a cooling effect generated when a bipolar semiconductor is combined. When a voltage is applied to the thermoelectric element, a temperature difference occurs on both sides of the element, and if the temperature is lowered by cooling a relatively high temperature surface, the other surface is rapidly lowered due to the temperature difference.

In the cold unit 100 of the present embodiment, one thermoelectric element 10 is installed between the heat transfer block 40 and the water cooling jacket 52. The thermoelectric element 10 may have a structure in which a plurality of semiconductor units (see 21, 22, and 23 of FIG. 8) are stacked. The structure of the thermoelectric element will be described later.

As such, by providing a thermoelectric element 10 having a plurality of semiconductor units stacked therein, the cold / hot unit 100 of the present embodiment can realize a lower temperature even at a lower power, and can control the temperature more quickly and effectively. Will be.

Hereinafter, the thermoelectric device according to the present embodiment will be described with reference to FIGS. 6 to 8.

The thermoelectric element 10 of the present embodiment includes the semiconductor unit 20, the first heat transfer plate 24 and the second heat transfer plate 26, and the first heat transfer plate 24 and the second bonded to the outside of the semiconductor unit. The heat transfer plate 26 may include a sealing member 30 that seals the interior of the front end to seal the inside thereof.

The thermoelectric element 10 of the present embodiment may include a plurality of semiconductor units 20, and the plurality of semiconductor units may have a structure stacked between the first heat transfer plate 24 and the second heat transfer plate 26.

Each semiconductor unit may include a plurality of semiconductors 13 arranged at intervals, and an upper electrode 16 and a lower electrode 17 arranged in a pattern set at upper and lower ends of the semiconductor and electrically connected to the semiconductor.

A plurality of semiconductors 13 are arranged on the same surface at intervals to form each semiconductor unit 20.

Since the semiconductor units stacked in the thermoelectric element 10 serve to dissipate heat from neighboring semiconductor units, heat dissipation is performed in multiple stages in one thermoelectric element 10. Thus, by using a single thermoelectric element 10 can be driven with low power, it is possible to implement a lower temperature quickly and effectively.

In the present embodiment, a structure in which three semiconductor units are stacked will be described as an example. However, the apparatus is also applicable to a structure in which two or four or more thermoelectric elements 10 are stacked and arranged.

In the following description, lower or lower means lower along the y axis in FIG. 6 and upper or upper means upper along the y axis. In addition, for convenience of description, each semiconductor unit sequentially stacked from the bottom along the y-axis direction is referred to as a first semiconductor unit 21, a second semiconductor unit 22, and a third semiconductor unit 23. The semiconductor unit 20 may refer to all stacked semiconductor units. In addition, the plate forming the lower surface of the thermoelectric element 10 to be in contact with the heat transfer block 40 is called the first heat transfer plate 24, and the plate forming the upper surface of the thermoelectric element 10 to be in contact with the water cooling jacket 52 is referred to as the second heat transfer plate. It is called (26).

The first semiconductor unit 21 substantially imparts a temperature condition for inspection to the memory module M through the lower surface, and the second semiconductor unit 22 is disposed on the upper surface of the first semiconductor unit 21. The heat of 21 is dissipated. In addition, the third semiconductor unit 23 dissipates heat of the second semiconductor unit 22 on the upper surface of the second semiconductor unit 22. As the heat dissipation is performed over the multilayer in the thermoelectric element 10, the first heat transfer plate 24, which is in contact with the first semiconductor unit 21, may be cooled or heated more quickly and effectively.

In this embodiment, each semiconductor unit 20 may have the same structure. That is, each semiconductor unit 20 includes the same number of semiconductors 13, and each semiconductor 13 is arranged at the same position at the same interval.

Accordingly, the plurality of stacked semiconductor units 20 may be formed to have the same area having the same quantity of semiconductors 13. Therefore, in the thermoelectric element 10 of the present embodiment, even if a plurality of semiconductor units are stacked in multiple stages, the area of each semiconductor unit is constant to ensure sufficient structural rigidity.

The semiconductor 13 of each semiconductor unit is composed of an N-type semiconductor 14 and a P-type semiconductor 15, and are arranged alternately with each other in a pattern in which the upper electrode 16 and the lower electrode 17 are set at upper and lower ends. The N-type semiconductor 14 and the P-type semiconductor 15 are electrically connected. In the following description, reference numeral 13 denotes a semiconductor regardless of N-type or P-type, and reference numerals 14 and 15 denote N-type semiconductors and P-type semiconductors, respectively.

The first semiconductor unit 21 is made up of a plurality of semiconductors 13 arranged on the first heat transfer plate 24. The plurality of semiconductors 13 stacked on the semiconductors 13 of the first semiconductor unit 21 form the second semiconductor unit 22. The plurality of semiconductors 13 stacked on the semiconductors 13 of the second semiconductor unit 22 form the third semiconductor unit 23.

As shown in FIG. 6, an intermediate heat transfer plate 28 is formed between the first semiconductor unit 21 and the second semiconductor unit 22 and between the second semiconductor unit 22 and the third semiconductor unit 23, respectively. Can be installed.

Thus, in the present embodiment, the first semiconductor unit 21 is installed between the first heat transfer plate 24 and the intermediate heat transfer plate 28, and the second semiconductor unit 22 is installed between the intermediate heat transfer plate 28. The third semiconductor unit 23 is provided between the intermediate heat transfer plate 28 and the second heat transfer plate 26.

The intermediate heat transfer plate 28 may be made of, for example, the same material as the first heat transfer plate 24 or the second heat transfer plate 26. The intermediate heat transfer plate 28 is a plate-like structure to insulate between the semiconductor of each semiconductor unit. Heat generated between neighboring semiconductor units with the intermediate heat transfer plate 28 therebetween is conducted to the intermediate heat transfer plate 28. Thus, heat exchange is performed in the intermediate heat transfer plate 28 to heat dissipate heat generated in one semiconductor unit.

The first heat transfer plate 24 and the second heat transfer plate 26 are sized to cover the entire semiconductor unit to form opposite surfaces of the thermoelectric element 10. A plurality of semiconductor units 20 are stacked and installed between the two first heat transfer plates 24 and the second heat transfer plates 26.

In this embodiment, the first heat transfer plate 24, the second heat transfer plate 26, and the intermediate heat transfer plate 28 have a structure in which a fastening hole 12 penetrates through the front surface.

The fastening hole 12 may be formed in the same position at the same position on the first heat transfer plate 24, the second heat transfer plate 26, and the intermediate heat transfer plate 28.

As shown in FIG. 6, in the present embodiment, one fastening hole 12 may have a structure formed at a central portion of the thermoelectric element 10. The fastening hole 12 may be modified in various ways in the number or position of formation of the structural surface formed through the thermoelectric element 10.

As mentioned, the thermoelectric element 10 of the present embodiment secures structural rigidity as the semiconductors of the stacked semiconductor units 20 have the same number. Thus, even if the fastening hole 12 is formed through the thermoelectric element 10 as described above, structural degradation of rigidity can be prevented. Accordingly, in the present embodiment, the fastening unit 12 may be formed in the thermoelectric element 10 to assemble the cold / hot unit 100. Accordingly, the size of the cold / hot unit 100 may be further reduced while ensuring sufficient rigidity. do.

The semiconductor units 20 may be connected in series or in parallel. For example, the semiconductor of the first semiconductor unit 21 and the semiconductor of the second semiconductor unit 22 are connected along the current flow, and the semiconductor of the second semiconductor unit 22 and the semiconductor of the third semiconductor unit 23 are connected. Can be electrically connected.

Thus, as illustrated in FIG. 7, current may be applied to the plurality of stacked semiconductor units by connecting two wires 18 and 19 into the thermoelectric element 10. Accordingly, the current applying structure of the thermoelectric element 10 can be simplified to apply a current to the entire semiconductor of the thermoelectric element 10 through only two wires connected to the thermoelectric element.

As such, while stacking a plurality of semiconductors in the vertical direction, the electrical connection structure to the thermoelectric element 10 can be simplified to simplify the number of wires and the wiring structure applied to the device. Thus, the structure of the device can be simplified and the device can be miniaturized.

As shown in FIG. 8, along the circumference of the thermoelectric element 10, a first heat transfer plate 24 and an intermediate heat transfer plate 28, between the intermediate heat transfer plates, and the intermediate heat transfer plate 28 and the second heat transfer plate ( The sealing member 30 is installed between the 26. The sealing member 30 may be filled in the internal empty space of the thermoelectric element 10 and may be installed between the semiconductor 13 and the semiconductor 13. Accordingly, the thermoelectric element 10 may further increase the durability of the thermoelectric element 10 by the moisture blocking effect and the shock absorption by the sealing member 30.

In the present embodiment, the sealing member 30 may be made of an epoxy material 32 including silicon particles 34. When the sealing member is made of a silicon material, the moisture penetrates into the thermoelectric element 10 due to the occurrence of a fine gap of the silicon material itself. In addition, when the sealing member is made of only epoxy material, there is a problem that the sealing member is hardened at low temperature and thus does not absorb external impact.

However, the sealing member 30 of the present embodiment includes the silicon particles 34 in the epoxy 32, so that the thermoelectric element 10 can secure the effect by the epoxy and the effect by the silicon at the same time. Accordingly, in the thermoelectric element 10 of the present exemplary embodiment, the sealing member 30 more reliably blocks the first heat transfer plate 24 and the intermediate heat transfer plate 28 and the second heat transfer plate 26 at low temperature, thereby preventing external moisture. In addition to preventing penetration, absorbing external shock applied to the thermoelectric element 10 may increase durability.

In the present exemplary embodiment, the silicon particles 34 may be included in an amount of 2 wt% to 21 wt% based on the entire sealing member 30. When the silicon particles are mixed less than 2% by weight, the sealing member is hardened at low temperatures, making it difficult to secure the durability of the thermoelectric element, and may cause damage to the thermoelectric element by external impact. When the silicon particles are more than 21% by weight, external moisture may penetrate into the thermoelectric element through the silicon particles, and thus fail to properly perform the role of the sealing member.

As shown in FIG. 8, the thermoelectric element 10 according to the present exemplary embodiment has a structure in which a moisture proof paint is applied to the side surface of a semiconductor to form a coating layer 36 to prevent corrosion due to moisture.

The coating layer 36 may be formed on inner surfaces of the upper electrode 16 and the lower electrode 17 connected to the semiconductor in addition to the semiconductor 13 side surface.

In the present embodiment, the coating layer 36 may be formed of a carbon-based organic paint or a carbon-based inorganic paint. That is, the thermoelectric element 10 forms the coating layer 36 by applying the paint to the side surfaces of the semiconductor and the inner surfaces of the upper electrode and the lower electrode connected to the semiconductor.

The coating layer may be formed in various ways, and the thickness of the coating layer is not particularly limited and may be variously modified.

In the present embodiment, the coating layer 36 is made of a carbon-based organic paint or a carbon-based inorganic paint to ensure sufficient heat resistance and weather resistance, chemical stability, electrical insulation, etc. for the internal configuration of the thermoelectric element 10. Will be.

As described above, the thermoelectric element 10 includes a semiconductor through the coating layer 36 to form a coating on the internal components of the thermoelectric element, thereby improving moisture resistance to corrode the thermoelectric element against moisture penetrating into the thermoelectric element. To prevent it. In addition, the coating layer 36 increases the strength of the semiconductor 13 to increase the durability of the thermoelectric element 10 against loads and external shocks applied to the thermoelectric element.

Here, the semiconductor 13 of each semiconductor unit 20 has a structure in which the size gradually decreases from the first heat transfer plate 24 to the second heat transfer plate 26 along the y-axis direction. In the present exemplary embodiment, the height of the semiconductor 13 of each semiconductor unit may gradually decrease from the lower side to the upper side in the y-axis direction. Height means the length in the y-axis direction.

That is, as shown in FIG. 8, the semiconductor height B of the second semiconductor unit 22 is smaller than the semiconductor height A of the first semiconductor unit 21, and the second semiconductor unit 22 is relatively smaller than the semiconductor height A of the first semiconductor unit 21. The semiconductor height C of the third semiconductor unit 23 is relatively smaller than the semiconductor height of.

Thus, while forming the same size of the semiconductor unit 20 and the number of semiconductors in the thermoelectric element 10, the resistance capacity of each stacked semiconductor unit is different. That is, by varying the size of the semiconductor 13 of each stacked semiconductor unit, the resistance value of the semiconductor gradually decreases from the first semiconductor unit 21 to the third semiconductor unit 23.

In each semiconductor unit, the amount of heat varies depending on the resistance value of the semiconductor provided. Therefore, in this embodiment, the heat dissipation area of each semiconductor unit can be varied while maintaining the same heat dissipation area between the stacked semiconductor units with the same number of semiconductor units.

Accordingly, in the present embodiment, the heat amount of the second semiconductor unit 22 is relatively large with respect to the first semiconductor unit 21 stacked in the thermoelectric element 10, and the third semiconductor unit 23 is the second semiconductor unit. It is relatively larger in heat than (22). Accordingly, the amount of heat can be increased further from the first semiconductor unit 21 to the third semiconductor unit 23.

As such, as only one thermoelectric element 10 is driven, the calorific value is increased in multiple stages through the plurality of semiconductor units 20 provided therein while using low power, thereby enabling a faster and more effective lower temperature. do.

According to the structure described above, a current is applied to the thermoelectric element 10 of the present embodiment, thereby cooling or heating the memory module M.

9 to 13 illustrate various embodiments of a cold unit having a thermoelectric element having the above-described structure.

9 illustrates a cold / hot unit 100 having a single thermoelectric element 10 including three stages of semiconductor units as described above. The stacked structure of the semiconductor unit and the structure of the thermoelectric element are replaced with the above description, and the detailed description thereof will be omitted. A water cooling jacket 52 and a heat transfer block 40 are disposed at upper and lower ends of the thermoelectric element 10, respectively. A fixing bolt 62 penetrates through the center of the cold unit 100 to fasten and fix the water cooling jacket 52, the thermoelectric element 10, and the heat transfer block 40. In the present embodiment, three semiconductor units having different capacities are stacked in the thermoelectric element while using one thermoelectric element, and thus, lower temperatures may be realized even at low power.

FIG. 10 shows a structure in which a separate high-capacity thermoelectric element 101 is additionally provided in addition to the thermoelectric element 10 of the embodiment shown in FIG.

In the cold / hot unit 100 according to the embodiment of FIG. 10, two thermoelectric elements 10 and 101 are stacked between the water cooling jacket 52 and the heat transfer block 40, and an intermediate thermal block 102 is installed between the two thermoelectric elements. It is structured. The fixing bolt 62 penetrates the center of the cold unit 100 to fasten and fix the water cooling jacket 52, the thermoelectric elements 10 and 101, the intermediate thermal block 102, and the heat transfer block 40.

The thermoelectric element 10 disposed below the two thermoelectric elements is a thermoelectric element as mentioned in FIG. 9, and the thermoelectric element stacked thereon is a high-capacity thermoelectric element 101 having only one semiconductor unit. High capacity means that the amount of heat is relatively larger than that of the uppermost semiconductor unit of the thermoelectric element of the present embodiment. The high capacity thermoelectric element 101 is also the same size as the thermoelectric element disposed below. In addition, a hole is formed in the center of the high-capacity thermoelectric element 10 and the intermediate thermal block 102 to allow the fixing bolt 62 to pass therethrough. The fixing bolt 62 penetrates the two thermoelectric elements 10 and 101 and the intermediate thermal block 102 and is fastened between the water cooling jacket 52 and the heat transfer block 40.

In the case of the cold / hot unit 100 shown in FIG. 10, by installing another high-capacity thermoelectric element 101 on the thermoelectric element 10, the heat generated from the lower thermoelectric element 10 has a high capacity disposed thereon. The thermoelectric element 101 can further heat dissipation. Thus, the cooling temperature can be lowered further.

The cold / hot unit 100 of the embodiment shown in FIG. 11 has a structure in which a plurality of thermoelectric elements 111, 112, and 113 having different capacities are stacked. Although the structure in which three thermoelectric elements are stacked in FIG. 11 is illustrated, the present invention is not limited thereto, and two or more thermoelectric elements may be provided.

In the cold unit 100 according to the embodiment of FIG. 11, three thermoelectric elements 111, 112, and 113 are stacked between the water cooling jacket 52 and the heat transfer block 40. The fixing bolt 62 penetrates through the center of the cold unit 100 to fasten and fix the water cooling jacket 52, the thermoelectric elements 111, 112, and 113 and the heat transfer block 40.

The three thermoelectric elements have different capacities, respectively. The cold unit 100 of this embodiment has a structure in which the heat amount of each thermoelectric element is gradually increased toward the water cooling jacket 52 from the heat transfer block 40.

Each of the thermoelectric elements 111, 112, and 113 has the same size and has the same number and arrangement of semiconductors provided therein. However, the semiconductor provided in each thermoelectric element has a different structure.

That is, as shown in FIG. 11, the semiconductor height of the thermoelectric element 112 disposed above the semiconductor element of the thermoelectric element 111 disposed at the bottom is relatively smaller, and the thermoelectric element disposed at the uppermost portion ( The semiconductor height of 113 is relatively smaller than that.

Thus, while forming the same size of the thermoelectric elements and the number and arrangement of semiconductors, the resistance capacitance of each of the stacked thermoelectric elements is changed. That is, by varying the semiconductor size of each of the stacked thermoelectric elements, the resistance value of each thermoelectric element gradually decreases upward from the lowest thermoelectric element.

For each thermoelectric element, the amount of heat depends on the resistance of the semiconductor provided. Therefore, the present embodiment can change the amount of heat of each thermoelectric element while maintaining the same size of each thermoelectric element.

Thus, in the present embodiment, a relatively low-capacity thermoelectric element 111, a relatively medium-capacity thermoelectric element 112, and a relatively high-capacity thermoelectric element 113 are stacked from the bottom.

From bottom to top, the semiconductor size of each thermoelectric element is reduced, thereby increasing the amount of heat in the thermoelectric element, thereby enabling the implementation of lower temperatures.

Three stacked thermoelectric elements (111, 112, 113) is formed in the center so that the fixing bolt 62 also passes through the center. The fixing bolt 62 is fastened between the water cooling jacket 52 and the heat transfer block 40 by passing through three thermoelectric elements.

As described above, in the case of stacking three thermoelectric elements, by varying the semiconductor size of each thermoelectric element, it is possible to maintain the same size of each thermoelectric element that is stacked differently from the prior art. Accordingly, even if the hole for fastening the fixing bolt 62 is formed in the center by sufficiently securing the stiffness of each thermoelectric element, it is possible to prevent a decrease in structural rigidity. Therefore, in the present embodiment, the cold temperature unit 100 may be assembled by penetrating the center of the thermoelectric element. Accordingly, the size of the cold temperature unit 100 may be further reduced while ensuring sufficient rigidity.

FIG. 12 is a view showing another embodiment of the cold / hot unit 100, in which an additional maximum capacitance thermoelectric element 121 is additionally provided in addition to the three thermoelectric elements 111, 112, and 113 of the embodiment illustrated in FIG. 11.

In the cold / hot unit 100 according to the embodiment of FIG. 12, thermoelectric elements 111, 112, and 113 having the structure of FIG. 11 are stacked between the water cooling jacket 52 and the heat transfer block 40, and the intermediate thermal block 122 is interposed thereon. The high capacitance thermoelectric element 121 is stacked in a structure. The thermoelectric elements 111, 112, and 113 disposed below the intermediate thermal block 122 have the same structure as those of the thermoelements described with reference to FIG. 11. The thermoelectric element 121 stacked thereon is a high capacity thermoelectric element provided with only one semiconductor unit. The high capacity means that the amount of heat is relatively higher than that of the uppermost thermoelectric element 113 among the thermoelectric elements disposed below the intermediate thermal block. The high capacity thermoelectric element 121 is also the same size as the thermoelectric elements disposed below. In addition, a hole is formed in the center of the high-capacity thermoelectric element 121 and the intermediate thermal block 122 to allow the fixing bolt 62 to pass therethrough. The fixing bolt 62 is fastened between the water cooling jacket 52 and the heat transfer block 40 through four thermoelectric elements and the intermediate thermal block.

In the case of the cold / hot unit 100 shown in FIG. 12, by installing another high-capacity thermoelectric element 121 on three stacked thermoelectric elements 111, 112, and 113, a high capacity disposed above the heat generation element of the lower thermoelectric element is disposed. The thermoelectric element 121 of the can further heat dissipation. Thus, the cooling temperature can be lowered further.

Figure 13 illustrates another embodiment of a cold unit.

13, a plurality of thermoelectric elements 131 and 132 in which a plurality of semiconductor units having the same heat amount are stacked are stacked. Each of the thermoelectric elements 131 and 132 has a different heat quantity.

Two thermoelectric elements 131 and 132 having different amounts of heat are stacked between the water cooling jacket 52 and the heat transfer block 40, and each thermoelectric element has a structure in which a plurality of semiconductor units are stacked therein. An intermediate thermal block 133 may be further installed between the two thermoelectric elements 131 and 132.

Although the structure in which two thermoelectric elements are stacked in FIG. 13 is illustrated, the present invention is not limited thereto, and three or more thermoelectric elements may be provided. The fixing bolt 62 penetrates the center of the cold unit 100 to fasten and fix the water cooling jacket 52, the two thermoelectric elements 131 and 132, and the heat transfer block 40.

Each thermoelectric element 131 and 132 has a structure in which two semiconductor units 100 are stacked therein. The number of semiconductor units is not limited to two and may be provided three or more. Since the stacked structure of the semiconductor unit 100 is the same as described in FIG. 9 except that the number of stacked layers is different, a detailed description of the stacked structure of the semiconductor unit is omitted.

The number and arrangement of semiconductors of the semiconductor units 100 provided in the thermoelectric elements 131 and 132 are the same. In addition, the number and arrangement of semiconductors are the same among the thermoelectric elements.

The two stacked thermoelectric elements 131 and 132 have holes formed in the center thereof so that the fixing bolts 62 pass through the centers thereof. The fixing bolt 62 penetrates the two thermoelectric elements 131 and 132 and is fastened between the water cooling jacket 52 and the heat transfer block 40.

As described above, it is possible to maintain the same size of each of the thermoelectric elements stacked. Accordingly, even if the hole for fastening the fixing bolt 62 is formed in the center by sufficiently securing the stiffness of each thermoelectric element, it is possible to prevent a decrease in structural rigidity. Therefore, in the present embodiment, the cold temperature unit 100 may be assembled by penetrating the center of the thermoelectric element. Accordingly, the size of the cold temperature unit 100 may be further reduced while ensuring sufficient rigidity.

In this embodiment, the two thermoelectric elements each have a different capacity. The cold / hot unit 100 according to the present embodiment has a structure in which the heat amount of each thermoelectric element increases from the heat transfer block 40 toward the water cooling jacket 52. Each thermoelectric element has the same size and has the same number and arrangement of semiconductors provided therein. However, the semiconductor provided in each thermoelectric element has a different structure.

That is, as shown in FIG. 13, the semiconductor height of the thermoelectric element 132 disposed above is relatively smaller than the semiconductor height of the thermoelectric element 131 disposed below with the intermediate thermal block 133 interposed therebetween. .

Thus, while forming the same size of the thermoelectric elements and the number and arrangement of semiconductors, the resistance capacity of each stacked thermoelectric element is changed. That is, by varying the semiconductor size of each stacked thermoelectric element, the thermoelectric elements disposed above the lowest thermoelectric element have a smaller resistance value.

For each thermoelectric element, the amount of heat depends on the resistance of the semiconductor provided. Therefore, the present embodiment can change the amount of heat of each thermoelectric element while maintaining the same size of each thermoelectric element.

Thus, in this embodiment, a relatively low-capacity thermoelectric element 131 is disposed below the intermediate thermal block 133 and a high-capacity thermoelectric element 132 is stacked above. From bottom to top, the semiconductor size of each thermoelectric element is reduced, thereby increasing the amount of heat in the thermoelectric element, thereby enabling the implementation of lower temperatures.

Hereinafter, a case where a low temperature test is performed by applying cold heat to the memory module M will be described as an example.

The thermoelectric element 10 is driven to flow a current to the semiconductor 13 of each semiconductor unit 20 stacked in the thermoelectric element 10. The lower surface of the first semiconductor unit 21 is cooled at a relatively low temperature, and cold air is applied to the memory module M through the first heat transfer plate 24 in contact with the first semiconductor unit 21.

The upper surface of the first semiconductor unit 21 is a heat generating surface and is radiated by heat exchange with the second semiconductor unit 22 to maintain a temperature difference with the lower surface.

The lower surface of the second semiconductor unit 22 is cooled at a relatively low temperature, and cool air is cooled on the upper surface of the first semiconductor unit 21 through an intermediate heat transfer plate 28 in contact with the lower surface of the second semiconductor unit 22. Add. Thus, the upper surface of the first semiconductor unit 21 is cooled while being radiated by the second semiconductor unit 22.

The upper surface of the second semiconductor unit 22 is a heat generating surface and radiates heat through heat exchange with the third semiconductor unit 23 to maintain a temperature difference with the lower surface. The lower surface of the third semiconductor unit 23 is cooled at a relatively low temperature, and cool air is cooled on the upper surface of the second semiconductor unit 22 through an intermediate heat transfer plate 28 in contact with the lower surface of the third semiconductor unit 23. Add. Thus, the upper surface of the second semiconductor unit 22 is cooled while being radiated by the third semiconductor unit 23.

The upper surface of the third semiconductor unit 23 is a heat dissipating surface through a water cooling jacket 52 provided on the second heat transfer plate 26.

As described above, in the present exemplary embodiment, another semiconductor unit is stacked and heat-exchanged on one semiconductor unit in one thermoelectric element 10, so that cold air at a lower temperature can be finally applied quickly.

Compare Comparative example Example Remarks Temperature -45 ℃ -65 ℃ -21 ℃ difference Power consumption 170 W 100 W 40% savings size 8 × 8 × 6cm 5 × 5 × 5cm 32% reduction volume 384 125 Temperature drop rate 23 minutes 11 minutes 50% shorter

The characteristics of the cold unit prepared according to the present embodiment were tested in comparison with the prior art.

In Table 1, the embodiment shows the experimental results for the cold temperature unit with the thermoelectric element according to the present embodiment as mentioned, and the comparative example is the experimental result for the cold temperature unit in which a plurality of thermoelectric elements are stacked according to the prior art. Indicates.

In this experiment, two thermoelectric elements were stacked in a cold unit of the comparative example, one 121W (24 VDC, 6A) thermoelectric device having a size of 50 × 50mm and one 50W (12 VDC, 4A) thermoelectric device having a size of 30 × 30 mm.

In the cold unit of the embodiment, a thermoelectric element of a 102 W class (12 VDC, 8.5 A) having a size of 40 × 40 mm was used.

As shown in Table 1, as a result of the experiment, it can be confirmed that the temperature can be lowered to -65 ° C in the case of the comparative example, while the maximum temperature of -45 ° C can be added. Also in power consumption, it can be seen that the embodiment can obtain about 40% power saving effect compared to the comparative example, and the size can be further reduced than the comparative example.

The temperature drop rate in the comparison items in Table 1 is a measure of the time taken for one cycle to raise the temperature from -40 ° C to 125 ° C and then drop it back to -40 ° C. Also in the temperature falling rate, it can be confirmed that the Example can obtain the falling rate 50% or more faster than the comparative example.

While the exemplary embodiments of the present invention have been illustrated and described as described above, various modifications and other embodiments may be made by those skilled in the art. Such modifications and other embodiments will be considered and included in the appended claims without departing from the true spirit and scope of the invention.

10: thermoelectric element 12: fastening hole
13 semiconductor 16 upper electrode
17: lower electrode 20: semiconductor unit
21: first semiconductor unit 22: second semiconductor unit
23: third semiconductor unit 24: first heat transfer plate
26: second heat transfer plate 28: intermediate heat transfer plate
30: sealing member 36: coating layer
40: heat transfer block 42: female threaded hole
44: temperature sensor 46: control unit
50: heat dissipation unit 52: water cooling jacket
54: supply part 62: fixing bolt

Claims (17)

It includes a cold unit for applying cold and hot energy to the test object,
The cold / hot unit includes a thermoelectric element for generating cold and hot energy, a heat transfer block installed on one surface of the thermoelectric element to apply cold air or heat to a test object, and a heat dissipation unit installed on the other surface of the thermoelectric element to perform thermoelectric element and heat transfer. ,
The thermoelectric device includes a semiconductor unit including a plurality of semiconductors disposed on a same plane at intervals and a top electrode and a bottom electrode disposed in a pattern set at upper and lower ends of the semiconductor and electrically connected to the semiconductor, wherein the semiconductor unit A first heat transfer plate and a second heat transfer plate joined to an outer side of the sealing member, and a sealing member sealing the inside by sealing between the tip ends of the first heat transfer plate and the second heat transfer plate,
The semiconductor unit has a plurality of stacked in a plurality of stages between the first heat transfer plate and the second heat transfer plate, an intermediate heat transfer plate is provided between the semiconductor unit and the semiconductor unit constituting each layer,
And a semiconductor module of each semiconductor unit is gradually reduced in size from the first heat transfer plate to the second heat transfer plate. It includes a cold unit for applying cold and hot energy to the test object,
The cold unit is a thermoelectric element for generating cold and hot energy, a heat transfer block installed on one surface of the thermoelectric element to apply cold air or heat to a test object, a heat dissipation unit installed on the other surface of the thermoelectric element to perform heat transfer with the thermoelectric element, and the And a fixing bolt for fastening and fastening the heat dissipating portion and the heat transfer block disposed on both sides of the thermoelectric element and the thermoelectric element, wherein the fixing bolt is fastened between the heat dissipating portion and the heat transfer block through a fastening hole formed in the front surface of the thermoelectric element. Become,
In the cold / hot unit, at least two thermoelectric elements are stacked, and each thermoelectric element has the same size, and the temperature of the memory module having the structure in which the height of the semiconductor of each thermoelectric element gradually decreases from the heat transfer block toward the heat dissipation unit. Device. The method of claim 2,
The thermoelectric device includes a semiconductor unit including a plurality of semiconductors spaced apart from each other and a top electrode and a bottom electrode disposed in a pattern set at upper and lower ends of the semiconductor and electrically connected to the semiconductor, and bonded to the outside of the semiconductor unit A first heat transfer plate and a second heat transfer plate, and a sealing member sealing the inside of the first heat transfer plate and the second heat transfer plate by sealing the inside thereof, wherein the semiconductor unit includes a first heat transfer plate and a second heat transfer plate. A plurality of memory modules are stacked in between, and an intermediate heat transfer plate is provided between each semiconductor unit structure of the memory module temperature inspection device. delete The method of claim 2,
The cold / hot unit further comprises at least one intermediate thermal block installed between the thermoelectric elements. The method of claim 3, wherein
And a semiconductor module of each semiconductor unit is gradually reduced in size from the first heat transfer plate to the second heat transfer plate. The method according to claim 1 or 6,
The semiconductor of each of the semiconductor unit is a memory module temperature inspection device having a structure in which each height gradually decreases from the first heat transfer plate to the second heat transfer plate. The method of claim 7, wherein
The cold / hot unit further comprises a relatively high capacity thermoelectric element stacked on the thermoelectric element. The method of claim 7, wherein
A housing surrounding the cold and hot unit, and further comprising a buffer for cushioning the shock delivered to the cold and hot unit by flowing the cold and hot unit with respect to the housing,
The shock absorbing portion is installed in the lower end of the housing and the heat insulating block formed with a hole into which the end of the heat transfer block is inserted, the connection bolt is inserted into the through hole formed in the heat insulating block and installed in the heat transfer block, the connection bolt is inserted into the heat insulating block and Memory module temperature inspection device comprising an elastic spring that is elastically installed between the heat transfer block.
The method of claim 9,
The heat transfer block further includes a suction line formed at an end and a vacuum line extending inward through a side of the heat transfer block and connected to the suction hole, to apply a vacuum suction force to a test surface. The method of claim 9,
The inspection apparatus is a memory module temperature inspection apparatus of the structure through which the supply line penetrates through the side of the insulating block to the inside of the hole to supply clean air to the inspection space inside the hole through the supply line. The method of claim 9,
Further comprising a fixing for fixing the housing,
The fixing part includes a holder plate installed on a work table on which the test object is to be placed, a lever member rotatably installed at the lower end of the housing, and a latch formed on the lever member to be detachably coupled to the locking jaw of the side of the holder plate. Memory module temperature tester. A plurality of semiconductors disposed on the same plane at intervals, a semiconductor unit including an upper electrode and a lower electrode disposed in a pattern set at upper and lower ends of the semiconductor and electrically connected to the semiconductor, and bonded to an outer side of the semiconductor unit A first heat transfer plate and a second heat transfer plate, and a sealing member sealing the inside of the first heat transfer plate and the second heat transfer plate by sealing the inside thereof,
The semiconductor unit has a plurality of stacked in a plurality of stages between the first heat transfer plate and the second heat transfer plate, an intermediate heat transfer plate is provided between the semiconductor unit and the semiconductor unit constituting each layer,
The thermoelectric device having a structure in which the size of the semiconductor of each semiconductor unit gradually decreases from the first heat transfer plate to the second heat transfer plate. The method of claim 13,
Wherein each of the semiconductor units has the same number of semiconductors. delete The method of claim 13,
The semiconductor of each semiconductor unit is a thermoelectric element of the structure that each height gradually decreases from the first heat transfer plate to the second heat transfer plate. The method of claim 16,
At least one fastening hole penetrates between the first heat transfer plate and the second heat transfer plate.

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