KR102043120B1 - Semiconductor die pickup apparatus and semiconductor die pickup method - Google Patents

Semiconductor die pickup apparatus and semiconductor die pickup method Download PDF

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Publication number
KR102043120B1
KR102043120B1 KR1020157033050A KR20157033050A KR102043120B1 KR 102043120 B1 KR102043120 B1 KR 102043120B1 KR 1020157033050 A KR1020157033050 A KR 1020157033050A KR 20157033050 A KR20157033050 A KR 20157033050A KR 102043120 B1 KR102043120 B1 KR 102043120B1
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pressure
suction
semiconductor die
opening
suction opening
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KR1020157033050A
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KR20150145255A (en
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카즈아키 나가노
요시후미 카타야마
히로키 토요다
타케시 이시즈카
신스케 후쿠모토
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야마하 모터 로보틱스 홀딩스 가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68354—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to support diced chips prior to mounting

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Die Bonding (AREA)

Abstract

A stage 20 including an adsorption surface 22 that adsorbs the dicing sheet 12, a suction opening 40 provided on the adsorption surface 22 of the stage 20, and a slide along the adsorption surface 22. Opening 23 for opening and closing the suction opening 40 and switching the pressure of the suction opening 40 between the first pressure P 1 close to vacuum and the second pressure P 2 close to atmospheric pressure. The switching mechanism 80 is provided, and when the semiconductor die 15 is picked up, the lid 23 each time the pressure of the suction opening 40 is switched from the first pressure P 1 to the second pressure P 2 . ) In the opening direction by a predetermined distance. This suppresses the occurrence of damage to the semiconductor die and effectively picks up the semiconductor die.

Figure R1020157033050

Description

Pick-up device and pick-up method of semiconductor die {SEMICONDUCTOR DIE PICKUP APPARATUS AND SEMICONDUCTOR DIE PICKUP METHOD}

The present invention relates to a structure and a pickup method of a pickup device of a semiconductor die for use in a bonding device.

The semiconductor die is manufactured by cutting a 6 inch or 8 inch wafer into a predetermined size. At the time of cutting | disconnection, the dicing sheet is affixed on the back surface so that the cut semiconductor die may not be scattered, and a wafer is cut | disconnected by dicing saw etc. at the surface side. At this time, the dicing sheet affixed on the back surface is in the state which hold | maintained each semiconductor die without being cut only slightly beige. Each of the cut semiconductor dies is picked up from the dicing sheet one by one and sent to the next step such as die bonding.

As a method of picking up the semiconductor die from the dicing sheet, the dicing sheet is adsorbed on the surface of the disc-shaped adsorption member, and the semiconductor die is moved by a pushing block disposed at the center of the adsorption member while the semiconductor die is adsorbed to the collet. In addition to pushing up, a method of raising a collet and picking up a semiconductor die from a dicing sheet has been proposed (see, for example, FIGS. 9 to 23 of Patent Document 1). When peeling a semiconductor die from a dicing sheet, since it is effective to peel a peripheral part of a semiconductor die first, and to peel a center part of a semiconductor die first, in a prior art described in patent document 1, a pushing block Is divided into three parts, one for pushing up the periphery of the semiconductor die, one for pushing up the center of the semiconductor die, and one for pushing up the middle, raising the three blocks to a predetermined height, and then It raises higher than surrounding blocks, and finally raises a center block higher than an intermediate block.

In addition, the dicing sheet is adsorbed on the surface of the disk-shaped ejector cap, and the collet and each pushing block of the periphery, middle, and center are raised to a predetermined height higher than the surface of the ejector cap while the semiconductor die is adsorbed to the collet. After the height of the collet is set as it is, the pushing block is lowered to the position below the ejector cap surface in order of the surrounding pushing block and the middle pushing block to peel off the dicing sheet from the semiconductor die. The method is also proposed (for example, refer patent document 2).

When peeling a dicing sheet from a semiconductor die by the method of patent document 1, 2, as described in FIG. 40, 42, 44 of patent document 1, FIG. 4A or 4D of patent document 2, FIG. 5A or 5D. Before the semiconductor die is peeled off, the semiconductor die may be bent and deformed together with the dicing sheet while affixed to the dicing sheet. If the semiconductor die is broken when the dicing sheet is continued in the state where the semiconductor die is bent and deformed, the semiconductor die may be damaged. As described in FIG. 31 of Patent Document 1, the change in the flow rate of the suction air from the collet is changed. Detects the curvature of the semiconductor die and, as described in FIG. 43 of Patent Literature 1, when the intake flow rate is detected, it is determined that the semiconductor die is deformed, and once the pushing block is lowered, it is pushed up again. A method of raising the block is proposed.

Also, when picking up the semiconductor die, in the state of adsorbing the semiconductor die to be picked up by the collet, the tip of the lid on the side of closing the suction opening advances from the contact surface, and the lid is slid while pushing up the dicing sheet and the semiconductor die. After opening the gap between the suction opening and the front end of the lid, the back end side, which is the end of the side where the lid is opened, is advanced from the tight surface so that the surface of the lid is substantially parallel to the tight surface, and the dicing sheet and the semiconductor die are moved to the surface of the lid. There is also proposed a method in which the lid is slid to open the suction openings one after another, and the dicing sheet is peeled off sequentially from the semiconductor die which picks up the dicing sheet by the suction suction opening one after another (see Patent Document 3, for example). ).

Japanese Patent No. 49453339 U.S. Pat.No.8092645 Japanese Patent No. 4397429

(Summary of invention)

(Tasks to be solved by the invention)

By the way, in recent years, the semiconductor die is becoming very thin, for example, about 20 micrometers. On the other hand, since the thickness of a dicing sheet is about 100 micrometers, the thickness of a dicing sheet is four times the thickness of a semiconductor die. When the thin semiconductor die is to be peeled off from the dicing sheet, deformation of the semiconductor die following the deformation of the dicing sheet is more likely to occur, and in the prior art described in Patent Documents 1-3, the semiconductor from the dicing sheet There has been a problem that the semiconductor die is often damaged when picking up the die.

Therefore, an object of the present invention is to suppress the occurrence of damage to the semiconductor die and to effectively pick up the semiconductor die.

The pick-up apparatus of the semiconductor die of the present invention includes a stage including an adsorption surface on which a semiconductor die to pick up adsorbs the back surface of a dicing sheet affixed to the surface, a suction opening provided on the adsorption surface of the stage, and a slide along the adsorption surface. And a lid for opening and closing the suction opening, and an opening pressure switching mechanism for switching the pressure of the suction opening between a first pressure close to vacuum and a second pressure close to atmospheric pressure. After switching from the second pressure to the first pressure, the lid is slid in the opening direction by a predetermined distance every time the pressure of the suction opening is switched from the first pressure to the second pressure.

In the pick-up apparatus of the semiconductor die of the present invention, when picking up the semiconductor die, it is suitable to maintain the suction pressure on the suction surface in vacuum and slide the lid in the opening direction by a predetermined distance.

In the pick-up apparatus of the semiconductor die of the present invention, the lid is provided on the stage so that the surface thereof is free to move out of the suction surface, and when the pickup of the semiconductor die is picked up, the lid is slid slightly to make the suction opening minutely open, After advancing the surface of the to a predetermined height higher than the adsorption surface, the adsorption pressure is set to vacuum, and after a predetermined time, the pressure of the suction opening is switched from the second pressure to the first pressure, and is positioned on the micro-opening suction opening. It is suitable also as peeling a dicing sheet made from a semiconductor die.

In the pick-up apparatus of the semiconductor die of the present invention, the opening pressure switching mechanism is to switch the suction opening pressure a plurality of times between the first pressure and the second pressure before the lid is first slid in the opening direction by a predetermined distance. Also suitable.

In the pick-up apparatus of the semiconductor die of the present invention, the lid is provided on the stage so that the surface thereof is free to move out of the suction surface, and when the semiconductor die is picked up, the lid is covered in a state where the surface of the lid is advanced to a predetermined height higher than the suction surface. It is also suitable to slide a.

In the pickup apparatus of the semiconductor die of this invention, it is provided with peeling detection means which detects whether the part of the semiconductor die which is located just above the suction opening opened by sliding a lid is peeled from the surface of a dicing sheet, and peeling detection means When it is detected that a part of the semiconductor die has not been peeled from the dicing sheet, the pressure of the suction opening is changed again after switching the pressure of the suction opening from the first pressure to the second pressure without sliding the lid. It is also suitable to switch from the second pressure to the first pressure.

In the pickup apparatus of the semiconductor die of this invention, it is provided with the collet which adsorb | sucks a semiconductor die, the suction mechanism connected to the collet, and sucking the air from the surface of a collet, and the flow sensor which detects the suction air flow volume of a suction mechanism. The peel detection means judges that the differential signal that differentiates the suction air flow rate signal detected by the flow sensor has been separated when the number of times that the differential signal exceeds the predetermined threshold range becomes an even number, It is suitable as it.

In the pick-up apparatus of the semiconductor die of the present invention, the suction opening is provided in the vicinity of the end surface of the suction opening where the tip of the cover is in contact with the suction opening when the suction opening is closed. And a sheet displacement detection sensor for detecting displacement in the folding direction with respect to the adsorption surface of the dicing sheet positioned above the upper surface of the dicing sheet. When switching to one pressure, when the sheet displacement detected by the sheet displacement detection sensor is equal to or less than a predetermined threshold value, while the suction pressure is set to the atmospheric opening and the pressure of the suction opening is switched from the first pressure to the second pressure, After the adsorption pressure is vacuum again, the pressure of the suction opening is switched from the second pressure to the first pressure after a predetermined time elapses. It is also suitable to peel the dicing sheet positioned on the microscopically open suction opening from the semiconductor die. In addition, the sheet displacement detection sensor is suitable to use light having a wavelength in the region of 0% to 30% of the light transmittance with respect to the dicing sheet as a light source, and a reflective optical fiber having a short wavelength LED having a wavelength of 0nm to 300nm as a light source. It is suitable even if it used.

The method for picking up a semiconductor die of the present invention includes a stage including an adsorption surface on which a semiconductor die to pick up adsorbs the back surface of a dicing sheet affixed to the surface, a suction opening provided on the adsorption surface of the stage, and the surface thereof from the adsorption surface. It is provided on the stage so as to move freely, and has a lid for sliding along the suction surface to open and close the suction opening, and an opening pressure switching mechanism for switching the pressure of the suction opening between a first pressure close to vacuum and a second pressure close to atmospheric pressure. The step of preparing a pickup device for the semiconductor die, and the stage where the front end of the lid in the closed state coincides with one end of the semiconductor die to be picked up, and the stage is positioned so that the width direction position of the lid coincides with the width direction position of the semiconductor die. Alignment process for moving in the direction along the direction, and opening the suction opening by sliding the lid finely In addition, after advancing the surface of the lid to a predetermined height higher than the adsorption surface, the adsorption pressure is set to vacuum, and after a predetermined time elapses, the pressure of the suction opening is switched from the second pressure to the first pressure, and the micro-opening is performed. After the 1st peeling process which peels the dicing sheet located over one adsorption opening from a semiconductor die, and maintaining the adsorption pressure of a suction surface in vacuum, and switching the pressure of a suction opening from 2nd pressure to 1st pressure, Each time the pressure of the suction opening is switched from the first pressure to the second pressure, the lid is slid in the opening direction by a predetermined distance in a state in which the surface of the lid is advanced to a predetermined height higher than the suction surface, and opened by the slide. Having a second peeling step of peeling a part of the semiconductor die located directly above the suction opening from the surface of the dicing sheet Gong.

In the method of picking up the semiconductor die of the present invention, the opening pressure switching mechanism may switch the suction opening pressure a plurality of times between the first pressure and the second pressure before first sliding the lid in the opening direction by a predetermined distance. Suitable.

In the pickup method of the semiconductor die of this invention, when the suction opening is closed, the pick-up apparatus of a semiconductor die is provided in the vicinity of the end surface of the suction opening which the tip of a cover contacts, and slides a lid finely and micro-opens a suction opening. When it is, the sheet displacement detection sensor which detects the displacement of the folding direction with respect to the adsorption surface of the dicing sheet located on the adsorption opening which opened microscopically is provided, The 1st peeling process makes it predetermined | prescribed after making adsorption pressure into a vacuum, When the pressure of the suction opening is changed from the second pressure to the first pressure after the elapse of the time, the position of the suction opening detected by the sheet displacement detection sensor exceeds the predetermined threshold value, the position is above the micro-opening suction opening. When it is determined that the dicing sheet to be peeled off from the semiconductor die and the sheet displacement detected by the sheet displacement detection sensor is equal to or less than a predetermined threshold value The first peeling determination step of judging that the dicing sheet located on the microscopically opened adsorption opening has not been peeled from the semiconductor die, and the dicing sheet located on the adsorption opening of the microscopic opening in the first peeling determination step are semiconductor When it is judged that it did not peel off from a die, after making adsorption pressure into atmospheric opening and switching the pressure of a suction opening from a 1st pressure to a 2nd pressure, after making adsorption pressure into a vacuum again, after predetermined time passes It is also suitable to include the 1st retry process of switching the pressure of a suction opening from a 2nd pressure to a 1st pressure, and peeling the dicing sheet located on the micro-opening adsorption opening from a semiconductor die. In addition, the sheet displacement detection sensor is suitable to use light having a wavelength in the region of 0% to 30% of the light transmittance with respect to the dicing sheet as a light source, and a reflective optical fiber having a short wavelength LED having a wavelength of 0nm to 300nm as a light source. It is suitable even if it used.

In the method of picking up a semiconductor die of the present invention, the pickup device of the semiconductor die includes a collet for adsorbing the semiconductor die, a suction mechanism connected to the collet to suck air from the surface of the collet, and a suction air flow rate of the suction mechanism. The second peeling process includes a flow rate sensor, and the suction opening that is opened by sliding the lid when the number of times that the differential signal that differentiates the suction air flow rate signal detected by the flow rate sensor exceeds a predetermined threshold range becomes an even number. It is judged that a part of the semiconductor die located immediately above of is peeled from the surface of the dicing sheet, and when it becomes odd, a part of the semiconductor die located directly above the suction opening opened by sliding the lid is peeled from the surface of the dicing sheet. By a 2nd peeling determination process and a 2nd peeling determination process which judge that it has not been made, When it is judged that a part has not been peeled off from the surface of the dicing sheet, the pressure of the suction opening is changed from the second pressure again after switching the pressure of the suction opening from the first pressure to the second pressure without sliding the lid. It is suitable even if it includes the 2nd retry process which switches to 1 pressure and peels a part of semiconductor die from the surface of a dicing sheet.

The present invention can obtain the effect that the occurrence of damage to the semiconductor die can be suppressed and the semiconductor die can be picked up effectively.

BRIEF DESCRIPTION OF THE DRAWINGS It is explanatory drawing which shows the system structure of the pick-up apparatus of the semiconductor die in embodiment of this invention.
2 is a perspective view illustrating a stage of a pickup device of a semiconductor die in an embodiment of the present invention.
It is a top view which shows the stage of the pick-up apparatus of the semiconductor die in embodiment of this invention.
4A is a detailed view of the stage of the pickup apparatus of the semiconductor die in the embodiment of the present invention.
4B is a detailed view of portion A of FIG. 4A.
5A is a plan view of a lid of a pickup device for a semiconductor die in an embodiment of the present invention.
5B is an elevation view of a lid of a pickup device for a semiconductor die in an embodiment of the present invention.
5C is a detailed view of portion B of FIG. 5B.
It is sectional drawing of the stage and the lid | cover of the pick-up apparatus of the semiconductor die in embodiment of this invention.
It is explanatory drawing which shows the wafer affixed on the dicing sheet.
It is explanatory drawing which shows the semiconductor die affixed on the dicing sheet.
9A is a plan view illustrating the structure of a wafer holder.
9B is an elevation view showing the configuration of the wafer holder.
Fig. 10A is an elevation view showing the operation of the pickup device of the semiconductor die in the embodiment of the present invention.
10B is a plan view showing the operation of the pickup apparatus of the semiconductor die in the embodiment of the present invention.
It is explanatory drawing which shows the operation | movement of the pick-up apparatus of the semiconductor die in embodiment of this invention.
12A is an elevation view showing the operation of the pickup apparatus of the semiconductor die in the embodiment of the present invention.
It is a top view which shows the operation | movement of the pick-up apparatus of the semiconductor die in embodiment of this invention.
It is explanatory drawing which shows the operation | movement of the pick-up apparatus of the semiconductor die in embodiment of this invention.
It is explanatory drawing which shows the operation | movement of the pick-up apparatus of the semiconductor die in embodiment of this invention.
It is explanatory drawing which shows the operation | movement of the pick-up apparatus of the semiconductor die in embodiment of this invention.
It is explanatory drawing which shows the operation | movement of the pick-up apparatus of the semiconductor die in embodiment of this invention.
It is explanatory drawing which shows the operation | movement of the pick-up apparatus of the semiconductor die in embodiment of this invention.
It is explanatory drawing which shows the operation | movement of the pick-up apparatus of the semiconductor die in embodiment of this invention.
It is explanatory drawing which shows the operation | movement of the pick-up apparatus of the semiconductor die in embodiment of this invention.
It is explanatory drawing which shows the operation | movement of the pick-up apparatus of the semiconductor die in embodiment of this invention.
It is explanatory drawing which shows the operation | movement of the pick-up apparatus of the semiconductor die in embodiment of this invention.
It is an elevation view which shows operation | movement of the pick-up apparatus of the semiconductor die in embodiment of this invention.
It is a top view which shows operation | movement of the pick-up apparatus of the semiconductor die in embodiment of this invention.
It is a graph which shows the time change of the collet height at the time of the operation | movement of the pick-up apparatus of the semiconductor die in embodiment of this invention.
It is a graph which shows the time change of the opening width at the time of the operation | movement of the pick-up apparatus of the semiconductor die in embodiment of this invention.
It is a graph which shows the time change of the adsorption pressure at the time of the operation | movement of the pick-up apparatus of the semiconductor die in embodiment of this invention.
It is a graph which shows the time change of the pressure of the suction opening at the time of the operation | movement of the pick-up apparatus of the semiconductor die in embodiment of this invention.
It is a graph which shows the time change of the air leak amount of the collet at the time of the operation | movement of the pick-up apparatus of the semiconductor die in embodiment of this invention.
It is a graph which shows the time change of the amount of collet air leak at the time of peeling success at the time of the operation | movement of the peeling determination process of the pick-up apparatus of the semiconductor die in embodiment of this invention.
It is a graph which shows the time change of the derivative value of the collet air leak amount at the time of peeling success at the time of the operation | movement of the peeling determination process of the semiconductor die pick-up apparatus in embodiment of this invention.
It is a graph which shows the time change of the amount of collet air leak at the time of peeling failure at the time of the operation | movement of the peeling determination process of the pick-up apparatus of the semiconductor die in embodiment of this invention.
It is a graph which shows the time change of the derivative value of the collet air leak amount at the time of peeling failure in the case of operation | movement of the peeling determination process of the pick-up apparatus of the semiconductor die in embodiment of this invention.
It is a graph which shows the time change of the collet height in the other operation | movement of the pick-up apparatus of the semiconductor die in embodiment of this invention.
It is a graph which shows the time change of the opening width in the other operation | movement of the pick-up apparatus of the semiconductor die in embodiment of this invention.
It is a graph which shows the time change of the adsorption pressure at the time of another operation | movement of the pick-up apparatus of the semiconductor die in embodiment of this invention.
It is a graph which shows the time change of the pressure of the suction opening in the other operation | movement of the pick-up apparatus of the semiconductor die in embodiment of this invention.
It is a graph which shows the time change of the air leak amount of the collet in the other operation | movement of the pick-up apparatus of the semiconductor die in embodiment of this invention.

(Form to carry out invention)

EMBODIMENT OF THE INVENTION Hereinafter, the pick-up apparatus of the semiconductor die of embodiment of this invention is demonstrated, referring drawings. As shown in FIG. 1, the pick-up apparatus 500 of the semiconductor die of this embodiment is a wafer in which the semiconductor die 15 hold | maintains the dicing sheet 12 affixed on the surface 12a, and moves to a horizontal direction. The stage 20 which is arrange | positioned in the lower surface of the holder 10 and the wafer holder 10, and the adsorption surface 22 which adsorb | sucks the back surface 12b of the dicing sheet 12, and is shown in FIG. As shown in FIG. 1, the suction opening 40 provided in the suction surface 22 of the stage 20, the lid 23 which opens and closes the suction opening 40, and the lid 23 rotate as shown in FIG. Slider drive mechanism 300 for sliding slider 332 freely attached, collet 18 for picking up semiconductor die 15, and opening pressure switching for switching the pressure of suction opening 40 of stage 20. From the mechanism 80, the adsorption pressure switching mechanism 90 for switching the adsorption pressure of the adsorption surface 22 of the stage 20, and the surface 18a of the collet 18 The suction mechanism 100 that sucks air, the vacuum device 140, the wafer holder horizontal direction driving unit 110 that drives the wafer holder 10 in the horizontal direction, and the stage 20 in the vertical direction. And a collet driver 130 for driving the collet 18 in the up, down, left, and right directions, and a controller 150 for driving control of the pickup device 500 of the semiconductor die. .

As shown in FIG. 1, the slider drive mechanism 300 provided inside the stage 20 is attached to the suction surface 22 by the drive unit 25 attached to the gas unit 24 of the stage 20. A first link 326 driven in a forward / rearward direction, a piston 370 slidingly attached to the housing 21 of the stage 20, and advancing and retracting with respect to the suction surface 22, and the interior of the housing 21. A stopper 321a, which is engaged with the flange 371 of the piston 370 and restricts the movement in the advancing direction with respect to the suction surface 22 of the piston 370, the first link 326 and the piston. A spring 373 connecting the 370 to the adsorption surface 22 in a direction advancing and adjoining the piston 370, extending substantially in parallel with the adsorption surface 22 and extending in the direction in which the groove 22a extends. The guide rail 331, the slider 332 slidingly attached to the guide rail 331, and the pin 328 are freely rotated by the piston 370. , The slider 332 and the first link 326 are connected to each other, and the piston 370 abuts against the stopper 321a, so that the slider 332 is in a retracted direction with respect to the suction surface 22 of the first link 326. It is comprised by the 2nd link 329 which converts operation | movement to the movement of the direction along the guide rail 331 of the slider 332. As shown in FIG. A cylindrical pin 330 extending in the width direction of the groove 22a is attached to the slider 332, and the tip 330 of the lid 23 is attached to the pin 330 as shown in FIGS. 5A and 5B. An inverted U-shaped cutout provided in the arm 23f overhanging on the end face 22e side from 23a) is rotatably engaged. In addition, the second link 329 has a pin 327 provided at one end thereof into the engagement groove 326a of the first link 326, and the engagement groove 329a provided at the other end thereof has a pin 330a of the slider 332. ), The slider 332 and the first link 326 are connected. The motor 381 for operating the slider drive mechanism 300 is attached to the inside of the drive part 25, and the roller provided in the front-end | tip of the shaft 326b of the 1st link 326 to the rotating shaft of the motor 381. A cam 383 in contact with 326c is attached. When the motor 381 rotates in the direction of the arrow a shown in FIG. 1, the slider drive mechanism 300 raises the first link 326 indicated by the arrow b in FIG. 1 and the arrow in FIG. 1. The slider 332 is slid along the suction surface 22 to the right by the rotational operation of the second link 329 indicated by (d).

The opening pressure switching mechanism 80 for switching the pressure of the suction opening 40 (see FIG. 2) of the stage 20 or the pressure inside the housing 21 in communication with the suction opening 40 is shown in FIG. 1. As described above, the three-way valve 81 and the drive unit 82 for opening and closing the three-way valve 81 are provided. The three-way valve 81 has three ports, and the first port is connected to the housing 21 in communication with the suction opening 40 of the stage 20 by a pipe 83, and the second port is a vacuum device. It is connected with the piping 140 by the 140, and the 3rd port is connected with the piping 85 of an atmospheric opening. The driving unit 82 communicates the first port with the second port and blocks the third port so as to set the pressure of the suction opening 40 to the first pressure P 1 close to vacuum, or the first port and the third port. , The second port is blocked, and the pressure of the suction opening 40 is set to the second pressure P 2 close to atmospheric pressure, whereby the pressure of the suction opening 40 is adjusted to the first pressure P 1 and the second pressure. Switch between pressures P 2 .

The suction pressure switching mechanism 90 for switching the suction pressure of the suction surface 22 of the stage 20 is a three-way valve 91 having three ports, such as the opening pressure switching mechanism 80, and a three-way valve ( A driving unit 92 for opening / closing driving 91, the first port is connected to a suction hole 27 and a pipe 93 communicating with the suction groove 26 of the stage 20, and the second port is connected to the suction hole 27. It connects with the vacuum apparatus 140 and the piping 94, and the 3rd port is connected with the piping 95 of air | atmosphere opening. The driving unit 92 communicates the first port with the second port and blocks the third port to set the pressure of the suction groove 26 or the suction surface 22 to the third pressure P 3 close to vacuum, The first and third ports communicate with each other and the second port is shut off, so that the pressure of the suction groove 26 or the suction surface 22 is set to the fourth pressure P 4 close to the atmospheric pressure. Alternatively, the pressure of the suction surface 22 is switched between the third pressure P 3 and the fourth pressure P 4 .

The suction mechanism 100 for sucking air from the surface 18a of the collet 18 is similar to the opening pressure switching mechanism 80, and the three-way valve 101 having three ports and the three-way valve 101 The drive part 102 which performs opening / closing drive is provided, and air is sucked in from the surface 18a through the suction hole 19 of the collet 18, and the surface 18a of the collet 18 is made into a vacuum. The pipe 103 connecting the suction hole 19 of the collet 18 and the three-way valve 101 detects an air flow rate sucked by the vacuum device 140 from the surface 18a of the collet 18. The flow sensor 106 is attached.

The wafer holder horizontal direction drive unit 110, the stage up-and-down direction drive unit 120, and the collet drive unit 130 are, for example, a wafer holder 10, a stage 20, and a collet by a motor and a gear provided therein. 18) is driven in the horizontal direction or in the vertical direction. In addition, as shown in FIG. 1, when the suction opening 40 is closed, in the vicinity of the end surface 22e of the suction opening 40 which the tip 23a of the lid 23 abuts, the dicing sheet 12 The sheet displacement detection sensor 107 which detects the displacement of the folding direction with respect to the suction surface 22 is attached. The irradiation light irradiated from the light source of the sheet displacement detection sensor 107 has a high reflectance which does not affect the quality of the dicing sheet, the die attach film existing between the dicing sheet and the die, and the adhesive layer of the die attach film. Light, for example, light having a short wavelength of 0 nm to 300 nm in which the light transmittance of the dicing sheet is 0% to 30% is preferable, more preferably 100 nm to 300 nm light, and most preferably 200 nm to 300 nm It is preferable to use a reflective optical fiber having a LED or a blue LED as a light source. Moreover, in this embodiment, although the thing using the reflective optical fiber was illustrated, if a light with a high reflectance with respect to a dicing sheet can be output, the sensor of another type can be used.

The control unit 150 includes a CPU 151 that performs arithmetic processing, a storage unit 152, and a device / sensor interface 153, and includes a CPU 151, a storage unit 152, and a device / sensor interface 153. Is a computer connected to the data bus 154. In the storage unit 152, the control program 155, the control data 156, the alignment program 157, the first peeling program 158, and the second peeling program 159 are stored.

Opening pressure switching mechanism 80, suction pressure switching mechanism 90, respective driving portions 82, 92, 102 and slider driving mechanism 300 of each of the three-way valves 81, 91, 101 of the suction mechanism 100. Motor 381, wafer holder horizontal drive unit 110, stage up and down drive unit 120, collet drive unit 130, and vacuum device 140 are connected to the device and sensor interface 153, respectively, and control unit 150 is provided. It is driven by the command of). In addition, the flow rate sensor 106 and the sheet displacement detection sensor 107 are connected to the apparatus and sensor interface 153, respectively, and the detection signal is received by the control part 150 and processed. In addition, in FIG. 1, a dashed-dotted line shows three directions of the apparatus and sensor interface 153 of the control part 150, the opening pressure switching mechanism 80, the adsorption pressure switching mechanism 90, and the suction mechanism 100, respectively. Each drive 82, 92, 102 of the valves 81, 91, 101 and the motor 381 of the slider drive mechanism 300, the wafer holder horizontal drive 110, the stage up and down drive 120, the collet drive The signal line which connects 130, the vacuum apparatus 140, the flow sensor 106, and the sheet displacement detection sensor 107 is shown.

Next, the details of the stage 20 and the lid 23 will be described with reference to FIGS. 2 to 6. As shown in FIG. 2, the stage 20 has a cylindrical housing 21 having an adsorption surface 22 for adsorbing a dicing sheet 12 on its upper surface, and an adsorption surface 22 of the housing 21. ) And a drive unit 25 attached to the base unit 24 to drive the slider drive mechanism 300 attached to the inside of the housing 21. The base part 24 of the stage 20 is attached to the stage fixing part which is not shown in figure. The suction surface 22 is provided on the outer circumferential side of the stage 20 of the groove 22a and the groove 22a recessed toward the inside of the stage 20 from the suction surface 22, The convex part 22b which protrudes from the bottom surface is provided. The side surface 22f of the groove 22a is flush with the guide surface 22g on both sides of the convex portion 22b and extends linearly from the inner circumferential side of the stage toward the outer circumferential side. The convex part 22b is a level | step difference which exists between the guide surfaces 22g and has a flat surface, and the height is smaller than the depth of the groove | channel 22a. The bottom surface of the groove 22a and the surface of the convex portion 22b are connected to the inclined surface 22c extending from the bottom surface of the groove 22a toward the surface of the convex portion 22b. Two holes 41 communicating with the inside of the stage 20 are provided in the bottom surface of the groove 22a, and ribs 22d are provided in the center of the hole 41 and on the stage outer surface side of the hole 41. .

The groove 22a has a width approximately equal to the width between the groove 22a and the surface of the guide surface 22g, and a lid 23 is attached to slide along the direction of the convex portion 22b from the groove 22a. . The lid 23a is the front end 23a on the side toward the end face 22e of the groove 22a in the slide direction, and the rear end 23c is the end of the side on which the lid 23 is opened. The cover 23 has a flat surface shape and an inclined surface inclined downward from the suction surface following the flat portion 23h and the flat portion 23h on which the semiconductor die 15 is placed on the dicing sheet 12 thereon. 23g). The length of the lid 23 in the slide direction is shorter than the length of the groove 22a in the slide direction, and the thickness of the flat portion 23h of the lid 23 is equal to the depth of the groove 22a. When the cover 23 is fitted in the groove 22a so that the tip 23a contacts the end surface 22e of the groove 22a, the flat portion 23h of the surface of the cover 23 is flush with the suction surface 22. do. The side surface 23b of the lid | cover 23 and the side surface 22f of the groove | channel 22a comprise the slide surface. Further, both coater portions of the groove 22a on the side where the tip 23a of the lid 23 is in contact protrude from the side surface 22f of the groove 22a toward the width direction of the groove 22a, and the suction surface 22 ), Vertical grooves 364 extending upward and downward toward the inner surface of the stage 20 and sucking the dicing sheet 12 are provided.

Since it is comprised as mentioned above, in the suction surface 22, the U-shaped suction opening 40 enclosed by the side surface 22f of the groove | channel 22a, the end surface 22e, and the guide surface 22g is formed. The suction opening 40 communicates with the interior of the housing 21. As shown in Fig. 2, three U-shaped suction grooves 26 are provided so as to surround the U-shaped suction opening 40 in threefold. Two to three suction holes 27 are drilled in each side of the suction groove 26. As shown in FIG. 1, the suction hole 27 is connected to the suction pressure switching mechanism 90 by a pipe 93.

As shown in FIG. 3, FIG. 4A, FIG. 4B, when the front-end | tip 23a of the cover 23 pushes against the end surface 22e of the inner peripheral side of the stage 20 of the groove | channel 22a, a suction opening ( 40 is closed, and the lid 23 slides along the side surface 22f and the guide surface 22g of the groove 22a from the inner circumferential side of the stage 20 to the outer circumferential side so that the tip 23a of the lid 23 is closed. The suction opening 40 opens when it is out of the end face 22e of the groove 22a. Therefore, the end surface 22e is the end surface of the suction opening 40 which the front-end | tip 23a of the cover 23 abuts when the suction opening 40 is closed.

As shown in FIGS. 4A and 4B, when the lid 23 is closed, the tip 23a of the lid 23 is in contact with the end face 22e, so that the lid 23 is in the closed state. ), Vertical grooves 364 having a fan-shaped cylindrical surface of approximately 180 degrees communicate with the suction surface 22 and the inside of the housing 21 at both corner portions of the groove 22a.

As shown in FIGS. 5B and 5C, the tip 23a side of the lid 23 has a flat plate shape, and the flat portion 23h on which the semiconductor die 15 is placed through the dicing sheet 12 has a substantially thick thickness. It is constant and the curved surface 23d which rounds the angle of the back surface and the surface of the rear end 23c side is provided in the back surface by the rear end 23c side of the cover 23, and the rear end 23c from the flat part 23h on the surface side. The inclined surface 23g which inclines toward the back surface side from the front surface side is provided toward (). The inclined surface 23g is provided in a region where the semiconductor die 15 is not raised upward, and the length of the flat portion 23h is longer than the length of the semiconductor die 15. The back side of the lid 23 is flat. Moreover, the chamfer 23e is provided in the both side surface 23b of the cover 23. As shown in FIG. On the rear surface of the tip 23a side of the lid 23, two arms 23f protruding in the direction of the tip 23a are provided. Each arm 23f is attached to penetrate each hole 41 provided in the stage 20 shown in FIG. The arm 23f has a U-shaped engagement groove, and as shown in FIG. 1, the engagement groove is engaged with the pin 330 of the slider 332 so as to be freely attached to the slider 332. .

As shown in FIG. 6, when the suction opening 40 is closed by the lid 23 so that the tip 23a of the lid 23 contacts the end face 22e of the groove 22a, the lid 23 is closed. The surface of the flat portion 23h is the same plane as the suction surface 22. In addition, when the tip 23a of the lid 23 is in contact with the end face 22e of the groove 22a and the suction opening 40 is closed, a small V-shaped groove is formed between the suction surface 22 and the lid 23. Is formed. In addition, the width of the groove 22a, that is, the width of the suction opening 40, the width of the lid 23, and the width of the semiconductor die 15 are approximately the same, respectively, and each side 22f of the groove 22a and the lid ( Each side 23b of 23 is in contact with a slide.

The operation of the pickup apparatus 500 of the semiconductor die configured as described above will be described with reference to FIGS. 7 to 23A to 23E. Here, before demonstrating the pick-up operation | movement of the semiconductor die 15, the process of setting the dicing sheet 12 in which the semiconductor die 15 was affixed to the wafer holder 10 is demonstrated.

As shown in FIG. 7, the wafer 11 has a sticky dicing sheet 12 affixed to the back surface, and the dicing sheet 12 is attached to a metal ring 13. The wafer 11 is thus handled in the state of being attached to the metal ring 13 through the dicing sheet 12. 8, the wafer 11 is cut | disconnected by the dicing saw etc. from the surface side in the cutting process, and becomes each semiconductor die 15. As shown in FIG. The notch gap 14 which arises at the time of dicing arises between each semiconductor die 15. The depth of the notch gap 14 reaches from the semiconductor die 15 to a part of the dicing sheet 12, but the dicing sheet 12 is not cut, so that each semiconductor die 15 has a dicing sheet 12. It is maintained by).

In this manner, the semiconductor die 15 having the dicing sheet 12 and the ring 13 attached thereto is attached to the wafer holder 10 as shown in FIGS. 9A and 9B. The wafer holder 10 is provided with a round annular expand ring 16 having a flange portion and a ring pressing portion 17 for fixing the ring 13 over the flange of the expand ring 16. The ring presser 17 is driven in a direction to advance and retreat toward the flange of the expand ring 16 by a ring presser drive not shown. The inner diameter of the expand ring 16 is larger than the diameter of the wafer on which the semiconductor die 15 is disposed, the expand ring 16 has a predetermined thickness, and the flange is located outside the expand ring 16. It is attached so that it may protrude outward to the end surface side of the direction off from the dicing sheet 12. FIG. In addition, the outer periphery of the dicing sheet 12 side of the expand ring 16 is curved so that the dicing sheet 12 can be smoothly stretched when the dicing sheet 12 is attached to the expand ring 16. It is composed. As shown in FIG. 9B, the dicing sheet 12 to which the semiconductor die 15 is affixed is in a substantially planar state before being set on the expand ring 16.

As shown in FIG. 1, when the dicing sheet 12 is set on the expand ring 16, the dicing sheet 12 is stretched along the curved surface of the upper portion of the expand ring by a step difference between the upper surface of the expand ring 16 and the flange surface. Since the dicing sheet 12 fixed on the expand ring 16 acts as a tension force from the center of the dicing sheet 12 toward the circumference. Moreover, since the dicing sheet 12 is extended by this tension force, the clearance gap 14 between each semiconductor die 15 affixed on the dicing sheet 12 is widened.

Next, the pick-up operation of the semiconductor die 15 will be described. The controller 150 first executes the alignment program 157 shown in FIG. 1. As shown to FIG. 10A and FIG. 10B, the control part 150 starts alignment of the cover 23 and the semiconductor die 15 in the state in which the cover 23 was closed. In the position where the lid 23 closes the suction opening 40, the tip 23a of the lid 23 is in contact with the end face 22e of the groove 22a, and the rear end 23c of the lid 23 is closed. The lower surface of the side is loaded on the surface of the groove 22a and is supported by the groove 22a. Moreover, the flat part 23h and the suction surface 22 of the surface of the cover 23 are substantially the same surface. The controller 150 moves the wafer holder 10 in the horizontal direction up to the standby position of the stage 20 by the wafer holder horizontal direction drive unit 110 shown in FIG. 1. And when the wafer holder 10 moves to the predetermined position above the standby position of the stage 20, the control part 150 stops the horizontal movement of the wafer holder 10 once, and is shown in FIG. The stage 20 is driven by the stage up-and-down driving unit 120 until the flat portion 23h on the surface of the suction surface 22 and the lid 23 of the stage 20 comes into close contact with the bottom surface of the dicing sheet 12. To increase. When the adsorption surface 22 of the stage 20 and the flat part 23h of the surface of the cover 23 are in close contact with the lower surface of the dicing sheet 12, the control part 150 stops raising the stage 20. FIG. . And the control part 150 again fits the one end 15a of the semiconductor die 15 picked up by the wafer holder horizontal direction drive part 110 to the front-end | tip 23a of the cover 23 in the closed state, The width direction position of the lid 23 and the width direction position of the semiconductor die 15 are aligned, and the side surface of the semiconductor die 15 is adjusted to match the side surface 23b of the lid 23. Since the width of the lid 23 is approximately the same width as that of the semiconductor die 15 to be picked up, when one surface 23b is aligned with the side surface of the semiconductor die 15, each side of the semiconductor die 15 and the lid 23 are separated. Each side 23b of the can be aligned. At this time, the dicing sheet 12 is subjected to a tensile force by the expand ring 16 of the wafer holder 10.

FIG. 10B is a plan view of the surfaces of the suction surface 22 and the lid 23 of the stage 20. The dicing sheet 12 and the semiconductor die 15 loaded thereon are indicated by a dashed-dotted line and their positional relationship. In FIG. 10B, the lid 23 is slightly larger than the semiconductor die 15 in order to distinguish between the semiconductor die 15 and the lid 23 having substantially the same width. The same applies to Figs. 12B and 22B. As shown in FIG. 10B, when the lid 23 and the semiconductor die 15 are aligned, the semiconductor die 15 is positioned above the flat portion 23h of the lid 23.

After advancing to the bottom surface of the dicing sheet 12 of the stage 20, adhering to the bottom surface, and aligning the semiconductor die 15, the control unit 150 uses the collet 18 by the collet driving unit 130 shown in FIG. 1. ) Is dropped above the semiconductor die 15 to land the surface 18a of the collet 18 on the semiconductor die 15. When the collet 18 lands on the semiconductor die 15, the controller 150 controls the three-way valve 101 by the drive unit 102 of the suction mechanism 100 to the suction hole 19 of the collet 18. The vacuum device 140 is switched in the direction of communicating. Thereby, the air of the suction hole 19 is sucked in the vacuum apparatus 140 like the arrow 301 shown in FIG. 11, the suction hole 19 turns into a vacuum, and the collet 18 is made to the surface 18a. The semiconductor die 15 is fixed by suction. At this time, the height of the surface 18a of the collet 18 is made into the initial height which added the thickness of the dicing sheet 12 and the thickness of the semiconductor die 15 to the height of the adsorption surface 22. FIG. In the state where the execution of the alignment program 157 is finished, the pressure of the suction opening 40, the suction groove 26, or the suction surface 22 is at atmospheric pressure (end of the alignment program 157).

Next, the control part 150 executes the 1st peeling program 158 shown in FIG. First, the controller 150, FIG. 23a~ from the time (t 0), the slider driving mechanism 300, the attracting surface 22, a flat portion (23h) of the surface of the cover 23 by the showing in Figure 23e In addition to advancing by the predetermined height H 1 , the lid 23 is micro-slid toward the outer circumferential side of the stage 20 to output a command for micro-opening the suction opening 40. As shown in FIG. 12A, when the motor 381 of the drive part 25 of the slider drive mechanism 300 rotates by the command of the control part 150, the cam 383 attached to the shaft of the motor 381 is carried out. It rotates. The cam 383 is oval-shaped, the cam surface is in contact with the roller 326c attached to the tip of the shaft 326b of the first link 326, and the cam 383 rotates in the direction of the arrow a in FIG. 12A. ), The cam surface pushes up the roller 326c in the direction of the suction surface 22. By this operation, the shaft 326b is raised as shown by the arrow b in FIG. 12A, and the entire first link 326 is raised toward the suction surface 22. When the entire first link 326 rises, the piston 370 connected to the suction surface 22 side by the spring 373 is pushed up by the first link 326, and the arrow c of FIG. 12A is raised. ), The entire piston 370 rises toward the suction surface 22. When the whole of the piston 370 rises toward the suction surface 22, the guide rail 331 attached to the suction surface 22 side also rises toward the suction surface 22 together with the piston 370. When the guide rail 331 rises, the slider 332 attached to slide along the upper surface of the guide rail 331 also rises toward the suction surface 22. The tip 23a of the lid 23, which is rotatably engaged with the slider 332 via the arm 23f, moves upward from the suction surface 22 with the rise of the slider 332.

As indicated by the arrow 201 of FIG. 13, when the tip 23a of the lid 23 advances upward from the suction surface 22, the tip 23a of the lid 23 is connected to the dicing sheet 12. One end 15a of the semiconductor die 15 is pushed up. Then, since the tip 23a receives downward force from the dicing sheet 12, the lid 23 rotates clockwise about the pin 330. As shown in FIG. The bottom surface of the rear end 23c side of the lid 23 is supported by the bottom face of the groove 22a, and the flat portion 23h of the surface on which the dicing sheet 12 of the lid 23 is pushed up is covered by the lid 23. The inclination is inclined downward from the front end 23a side to the rear end 23c side. The control part 150 raises the collet 18 by the collet drive part 130 in accordance with advancing from the adsorption surface 22 of the cover 23 to the upward direction like the arrow 302 shown in FIG. Although the dicing sheet 12 is inclined along the inclination of the flat portion 23h on the surface of the lid 23, the semiconductor die 15 affixed to the dicing sheet 12 also has an adsorption surface 22. Inclined against. For this reason, the one end 15a side of the semiconductor die 15 rises while being adsorbed by the collet 18, but the other end 15b side of the semiconductor die 15 adheres to the dicing sheet 12, and thus the collet ( Away from surface 18a of 18). In this state, the semiconductor die 15 is causing small bending deformation between the one end 15a side and the other end 15b side. Moreover, since the other end 15b side of the semiconductor die 15 deviates from the surface 18a of the collet 18, the arrow shown in FIG. 13 is separated from the clearance gap between the other end 15b of the semiconductor die 15 and the surface 18a. As in 303, air flows into the suction hole 19.

As shown in FIG. 12A, when the cam 383 of the slider drive mechanism 300 is further rotated by the command of the controller 150, and the first link 326 is pushed up toward the suction surface 22, In the direction in which the spring 373 between the piston 370 and the first link 326 that cannot move toward the suction surface 22 advances and retracts with respect to the suction surface 22 by the motor 381 and the cam 383. It begins to be compressed. When the spring 373 is compressed, the piston 370 does not advance with respect to the suction surface 22, and only the first link 326 advances with respect to the suction surface 22. For this reason, the pin 328 of the piston 370 does not raise with respect to the suction surface 22, but the pin 327 of the 2nd link 329 contained in the engagement groove 326a of the 1st link 326. ) Rises in the direction of the suction surface 22. The second link 329 then starts to rotate about the pin 328. By this rotation operation, the engaging groove 329a at the other end of the second link 329 moves toward the outer circumferential side of the stage 20, whereby the pin 330a contained in the engaging groove 329a is fixed. The cover 23 which is rotatably engaged with the slider 332 and the pin 330 of the slider 332 via the arm 23f starts to slide toward the outer peripheral side of the stage 20.

As shown in FIG. 14, when the cover 23 starts to slide toward the outer peripheral side of the stage 20, the curved surface 23d provided in the rear end 23c of the back surface of the cover 23 becomes the convex part 22b. And the inclined surface 22c connecting the bottom surface of the groove 22a. And if the cover 23 slides further, as shown by the arrow 203 of FIG. 14, the curved surface 23d of the cover 23 will rise along the inclined surface 22c. As a result, the surface on the rear end 23c side of the flat portion 23h of the lid 23 starts to advance from the suction surface 22. And if the cover 23 slides further, the curved surface 23d of the cover 23 will exceed the inclined surface 22c, and the back surface of the cover 23 will contact the surface of the convex part 22b. Since the projecting height from the bottom surface of the groove 22a of the convex portion 22b is approximately the same as the exit height H 1 from the adsorption surface 22 on the surface of the lid 23, the back surface of the lid 23 is the convex portion. When it comes in contact with the surface of 22b, the flat part 23h of the surface of the cover 23 will be substantially parallel to the adsorption surface 22. As shown in FIG. Since the lower surface of the lid 23 is supported by the surface of the convex portion 22b shown in FIG. 14, the lower surface of the lid 23 is separated from the bottom surface of the groove 22a. In front of this, the lid 23 slides in a state where the flat portion 23h on the surface of the lid 23 is substantially parallel to the suction surface 22.

When the flat portion 23h on the surface of the lid 23 is substantially parallel to the suction surface 22, the surface of the flat portion 23h is also substantially parallel to the surface 18a of the collet 18, so that the lid 23 ), The other end 15b side of the semiconductor die 15 of the portion deviated from the collet 18 when the flat portion 23h of the flat portion 23h is inclined is attracted to the surface 18a of the collet 18 again. As shown in FIG. 14, the entire flat portion 23h on which the semiconductor die 15 is mounted is disposed by the height H 1 from the suction surface 22 so that the lid 23 is substantially parallel to the suction surface 22. Upon advancing, a gap having a width D 1 occurred between the tip 23a and the end face 22e of the lid 23. This gap is the micro opening 42, and the width D 1 is the opening width D 1 of the micro opening 42. As shown in FIG. 14, the height of the surface 18a of the collet 18 is the thickness of the dicing sheet 12 and the semiconductor die at the exit height H 1 of the flat portion 23h of the lid 23. It becomes height Hc which added the thickness of (15).

Next, the controller 150 outputs the third command to a pressure (P 3), close to the suction pressure to the vacuum at the time (t 1) in Fig. 23c. By this instruction, the drive part 92 of the suction pressure switching mechanism 90 shown in FIG. 1 switches the three-way valve 91 to the direction which communicates the suction hole 27 and the vacuum apparatus 140. FIG. Then, as shown in Fig. As shown by the 14 arrow 202, the air, Fig. 23d naejyeo sucked by a vacuum apparatus 140 of the suction groove 26 through the suction opening 27, the time (t 2 ), The adsorption pressure becomes a third pressure P 3 close to vacuum. And the back surface 12b of the dicing sheet 12 of the periphery of the suction opening 40 is vacuum-sucked by the adsorption surface 22, as shown in FIG. Flat portion (23h) of the lid 23 when the whole is so to enter from the suction surface 22 by a height (H 1), the dicing sheet 12 is vacuum adsorbed to the adsorption face 22, shown in Figure 14 As described above, the dicing sheet 12 is obliquely subjected to downward tension force F 1 . The tensile force (F 1) can be decomposed into the dicing sheet tensile force (F 2) and a tensile force (F 3) pulling the dicing sheet 12 in the downward direction of pulling (12) in the transverse direction. The transverse tensile force F 2 generates the shear stress τ between the semiconductor die 15 and the surface 12a of the dicing sheet 12. The shear stress τ causes a deviation between the region near one end 15a of the semiconductor die 15 and the surface 12a of the dicing sheet 12. This shift | offset | difference becomes an occasion of peeling of the dicing sheet 12 and the area | region near one end 15a of the semiconductor die 15. FIG. As shown in FIG. 23C, the control unit 150 sets the adsorption pressure to the third pressure P 3 close to vacuum at time t 2 , and then sets the adsorption pressure to the third pressure P 3 close to vacuum. To keep on.

From controller 150, as shown in Fig. 23d, the time the second pressure (P 2) close to the atmospheric pressure, the pressure of the suction opening 40 to the time (t 3) after the predetermined time has elapsed from the (t 2) The command for switching to the first pressure P 1 close to the vacuum is output. By this instruction, the drive part 82 of the opening pressure switching mechanism 80 switches the three-way valve 81 to the direction which makes the vacuum opening 140 communicate with the inside of the suction opening 40 or the housing 21. . Then, as Fig. As shown at 15 of the arrow 204, the air suction opening 40 and the minute opening 42 is drawn into the vacuum apparatus 140, shown in Figure 23d, the time (t 4) The pressure of the suction opening 40 becomes the first pressure P 1 close to the vacuum. Thereby, as shown by the arrow 205 of FIG. 15, the dicing sheet 12 which is just over the micro opening 42 is pulled downward. Further, as shown by the dotted line in Fig. 23d, drive unit 82 of the opening pressure switching mechanism 80 includes a first pressure close to the atmospheric pressure in a period of time t 3 and t 6 (P 2) close to the first pressure in the vacuum A command for switching the pressure of the suction opening a plurality of times between P 1 may be output. Thereby, peeling of the surface 12a of the dicing sheet 12 and the semiconductor die 15 can be ensured more reliably. In addition, the region near one end 15a of the semiconductor die 15 located directly above the micro-opening 42 is pulled by the dicing sheet 12 and bent downward as indicated by the arrow 206. As a result, the region near one end 15a of the semiconductor die 15 is separated from the surface 18a of the collet 18. At the time t 2 , when the adsorption pressure became the third pressure P 3 close to vacuum, it occurred between the region near one end 15a of the semiconductor die 15 and the surface 12a of the dicing sheet 12. Because of the misalignment, since the gauge is peeled off from the surface 12a of the dicing sheet 12 in the region near the one end 15a of the semiconductor die 15, the region near the one end 15a of the semiconductor die 15 is formed. As shown by the arrow 206 of FIG. 15, peeling starts to peel from the surface 12a of the dicing sheet 12, even if it is bending deformation.

As shown in FIG. 15, when the area | region near one end 15a of the semiconductor die 15 falls from the surface 18a of the collet 18, as shown by the arrow 207 of FIG. 15, it is in a vacuum. Air flows into the suction hole 19 of the collet 18. Inflowed air flow rate (air leak amount) is detected by the flow sensor 106. As shown in FIG. 23D, the first pressure P 1 close to the vacuum from the second pressure P 2 close to atmospheric pressure has a pressure of the suction opening 40 from the time t 3 toward the time t 4 . The lower region of the semiconductor die 15 near one end 15a is pulled downward along with the dicing sheet 12 to bend and deform, and as shown in FIG. 23E, the collet ( The amount of air leak flowing into the suction hole 19 of 18) increases from the time t 3 toward the time t 4 .

As shown in FIG. 23D, the control unit 150 maintains the suction pressure at the third pressure P 3 close to the vacuum, and during the time t 5 at the time t 4 , the stage 20. Of the suction opening 40 or the micro-opening 42 at the first pressure P 1 close to the vacuum. In the meantime, as indicated by the arrow 208 of FIG. 16, the region near the one end 15a of the semiconductor die 15 includes the vacuum of the suction hole 19 of the collet 18 and the elasticity of the semiconductor die 15. This returns to the surface 18a of the collet 18. As the region near one end 15a of the semiconductor die 15 faces the surface 18a of the collet 18, as shown at time t 5 at time t 4 in FIG. 23E, the collet 18 Leakage amount of air flowing into the suction hole 19 of the () decreases, and at time t 5 , as shown in FIG. 16, the semiconductor die 15 is vacuumed on the surface 18a of the collet 18. If adsorbed, the air leak amount becomes zero. At this time, the region near the one end 15a of the semiconductor die 15 is peeled off from the surface 12a of the dicing sheet 12 located immediately above the micro opening 42 (initial peeling). When the region near one end 15a of the semiconductor die 15 is initially peeled from the surface 12a of the dicing sheet 12, as shown in FIGS. 15 and 16, directly above the micro opening 42. The dicing sheet 12 located is displaced downward. The control unit 150 detects the downward displacement (displacement in the folding direction relative to the suction surface 22) of the dicing sheet 12 by the sheet displacement detection sensor 107, and the detected displacement is a predetermined threshold. When the value is exceeded, it is determined that the region near the one end 15a of the semiconductor die 15 is initially peeled from the surface 12a of the dicing sheet 12 located directly above the micro opening 42. In addition, when the detected displacement is equal to or less than a predetermined threshold value, the region near one end 15a of the semiconductor die 15 is initially peeled off from the surface 12a of the dicing sheet 12 located directly above the micro opening 42. It is judged that it was not (the 1st peeling judgment process). When the control part 150 determines that the area | region near one end 15a of the semiconductor die 15 was initially peeled, it progresses to the next peeling process. In addition, when the control part 150 determines that the area | region near one end 15a of the semiconductor die 15 did not peel initially, it performs a 1st retry process.

In the first retrying process, the control unit 150 passes through the three-way valves 81 and 91 of the opening pressure switching mechanism 80 and the suction pressure switching mechanism 90 to the atmosphere and the suction opening 40 or the micro opening 42. ), The suction groove 26 is switched to communicate with each other, and the pressure of the suction opening 40 and the suction pressure are set to the second pressure P 2 and the fourth pressure P 4 close to the atmospheric pressure, and then the opening pressure The three-way valves 81 and 91 of the switching mechanism 80 and the suction pressure switching mechanism 90 communicate with the vacuum device 140, the suction opening 40 or the minute opening 42, and the suction groove 26. The pressure and the suction pressure of the suction opening 40 are switched, and the first pressure P 1 and the third pressure P close to vacuum from the second pressure P 2 and the fourth pressure P 4 close to the atmospheric pressure, respectively. 3 ), it is determined whether the displacement detected by the sheet displacement detection sensor 107 has exceeded a predetermined threshold value. And if the detected displacement exceeds the predetermined displacement, the first retrying process is terminated and the process proceeds to the next peeling process (end of the first peeling program).

Next, the control part 150 executes the 2nd peeling program 159 shown in FIG. The controller 150, in a holding state to the adsorption pressure as shown in Fig. 23c, Fig. 23d to the third pressure (P 3), close to vacuum, close to the first pressure the pressure in the suction opening 40 to the vacuum command to switch and kept a predetermined time (P 1), the time (t 5), the suction opening 40, the second pressure (P 2) close to the atmospheric pressure from the first pressure (P 1) closer to the vacuum in the Outputs By this command, the drive part 82 of the opening pressure switching mechanism 80 switches the three-way valve 81 so that the piping 85 and the suction opening 40 of an atmospheric opening may communicate. As a result, air flows into the suction opening 40 as shown by the arrow 210 shown in FIG. 17. Therefore, as shown in FIG. 23D, the time is from the time t 5 to the time t 6 . The pressure of the suction opening 40 rises from the first pressure P 1 close to the vacuum to the second pressure P 2 close to the atmospheric pressure. When raised to a suction opening 40, the second pressure (P 2) close to the atmospheric pressure, immediately the dicing sheet 12 that is formed on the minute opening 42 was pulled by the vacuum in the downward direction, 17 As indicated by the arrow 209, the direction returns upward.

If the controller 150, as shown in Fig. 23d, the time (t 6), the second pressure (P 2) close to the pressure in the suction opening 40, atmospheric pressure, as shown in Figure 23b, the cover Slide 23 to output an instruction to widen the opening width of the suction opening 40 from the opening width D 1 of the micro opening 42 to the opening width D 2 . According to this instruction, the motor 381 of the slider drive mechanism 300 shown in FIG. 1 rotates in the direction of the arrow a shown in FIG. 1, and the first link (indicated by the arrow b in FIG. 1) ( The slider 332 slides along the suction surface 22 to the right by the upward movement of the 326 and the rotation of the second link 329 indicated by the arrow d in FIG. 1, and the lid 23 is As shown by the arrow 211 of FIG. 17, the flat part 23h of the cover 23 surface slides in the state substantially parallel to the adsorption surface 22. FIG. When the opening width reaches D 2 , the control unit 150 stops the motor 381 to stop the slide of the lid 23. Opening the opening 43 of, between the front end (23a) and the end face (22e) of the suction opening 40 by the operation open the lid 23 has an opening width (D 2) as shown in Fig. 17 Becomes

As shown in FIG. 23D, the controller 150 changes the pressure of the suction opening 40 from the second pressure P 2 close to the atmospheric pressure to the first pressure P 1 close to the vacuum at time t 7 . Output the command to switch. By this command, the drive part 82 of the opening pressure switching mechanism 80 switches the three-way valve 81 so that the suction opening 40 and the vacuum apparatus 140 may communicate. As shown by arrow 212 in FIG. 18 Thus, the air in the suction opening 40 or opening the opening (43) is drawn into the vacuum apparatus 140, the time (t 8) has, as shown in Figure 23d As described above, the pressure of the suction opening 40 or the opening opening 43 becomes the first pressure P 1 close to the vacuum. When the pressure of the suction opening 40 or the opening opening 43 decreases from the second pressure close to the atmospheric pressure to the first pressure P 1 close to the vacuum, the dicing sheet located directly above the opening opening 43. As shown by arrow 213 of FIG. 18, 12 is drawn into the opening opening 43. Thereby, as shown by the arrow 214 of FIG. 18, the area | region near one end 15a of the semiconductor die 15 bends and deforms downward, deviating from the surface 18a of the collet 18, and FIG. As indicated by arrow 215 of 18, air flows into suction hole 19 of collet 18. The amount of air leak introduced into the suction hole 19 is detected by the flow sensor 106 shown in FIG. As shown in FIG. 23E, the air leak amount increases during the time t 8 at the time t 7 at which the pressure of the suction opening 40 or the opening opening 43 decreases.

When the control part 150 arrives at time t 8 , as shown in FIG. 23D, the pressure of the suction opening 40 is changed from the first pressure P 1 close to vacuum to the second pressure P 2 close to atmospheric pressure. Output the command to raise to. By this instruction, the drive part 82 of the opening pressure switching mechanism 80 switches the three-way valve 81 to communicate with the suction opening 40 and the piping 85 of the atmospheric opening. Thereby, as shown by the arrow 216 in FIG. 19, air flows into the suction opening 40 or the opening opening part 43, and as shown in FIG. 23D, the pressure of the suction opening 40 or The pressure of the opening opening 43 rises to the second pressure P 2 close to the atmospheric pressure. Thereby, as shown by the arrow 217 of FIG. 19, the dicing sheet 12 just over the opening opening part 43 is displaced upward. Moreover, the area | region near one end 15a of the semiconductor die 15 of the area | region located just above the opening opening 43, the arrow shown in FIG. 19 with the displacement of the dicing sheet 12 to the upward direction. It returns to the surface 18a of the collet 18 as shown at 218. When the semiconductor die 15 comes close to the surface 18a of the collet 18, the air flows into the suction hole 19 of the collet 18 as shown between the time t 8 and the time t 9 of FIG. 23E. The leak amount starts to decrease, and the air leak amount becomes zero at time t 9 in FIG. 23E. At this time, the region near the one end 15a of the semiconductor die 15 is vacuum-adsorbed to the surface 18a of the collet 18, and the one end of the semiconductor die 15 positioned immediately above the opening opening 43 ( The region near 15a is peeled from the surface 12a of the dicing sheet 12 (the end of the 1st 2nd peeling process).

At time t 9 , the controller 150 executes the second peeling process for the second time. As shown in FIG. 23B, the cover 23 is slid to output a command to widen the opening width of the suction opening 40 from the opening width D 2 to the opening width D 3 . By this instruction, the slider drive mechanism 300 shown in FIG. 1 is driven, and as for the cover 23, as shown by the arrow 219 of FIG. 20, the flat part 23h of the surface of the cover 23 is It slides in the substantially parallel state with the adsorption surface 22. When the opening width becomes D 3 , the control unit 150 stops the motor 381 to stop the slide of the lid 23. As shown in FIG. 17, the suction opening 40 is further opened by this operation, and the opening opening 44 of the opening width D 3 is provided between the tip 23a of the lid 23 and the end face 22e. )

In addition, as shown in FIG. 23D, the control unit 150 sets the pressure of the suction opening 40 at a time t 10 to the first pressure P 1 close to the vacuum from the second pressure P 2 close to the atmospheric pressure. Output the command to switch to. By this instruction, the drive part 82 of the opening pressure switching mechanism 80 switches the three-way valve 81 so that the suction opening 40 and the vacuum apparatus 140 may communicate. Thereby, as shown by the broken-line arrow 220 of FIG. 17, the air of the suction opening 40 or the opening opening part 44 is attracted to the vacuum apparatus 140, and the pressure or opening of the suction opening 40 is carried out. the pressure of the opening 44 is a first pressure (P 1) closer to the vacuum in time (t 11). Then, the dicing sheet 12 is drawn into the opening opening 44 as shown by the broken line arrow 221 shown in FIG. 20. At this time, since about half of the whole area | region is peeled from the dicing sheet 12, the semiconductor die 15 is easy to peel from the dicing sheet 12. FIG. For this reason, even if the dicing sheet 12 moves downward, the state which vacuum-adsorbed to the collet 18 is maintained without being displaced downward with the dicing sheet 12, and the opening opening 44 is immediately A portion of the semiconductor die 15 located above is peeled off from the surface 12a of the dicing sheet 12. Therefore, air does not flow into the suction hole 19 of the collet 18, and the air leakage amount becomes zero during t 11 at time t 10 in FIG. 20 (e).

When the control part 150 arrives at the time t 11 , as shown in FIG. 23D, the control part 150 sets the pressure of the suction opening 40 to the second pressure P 2 close to the atmospheric pressure from the first pressure P 1 close to the vacuum. Output the command to raise to). By this instruction, the drive part 82 of the opening pressure switching mechanism 80 switches the three-way valve 81 to communicate with the suction opening 40 and the piping 85 of the atmospheric opening. Thereby, as shown by the arrow 222 in FIG. 20, air flows into the suction opening 40 or the opening opening part 44, and as shown in FIG. 23D, the pressure of the suction opening 40 or The pressure of the opening opening 44 rises to the second pressure P 2 close to the atmospheric pressure. Thereby, as shown by the arrow 223 of FIG. 20, the dicing sheet 12 just over the opening opening part 44 is displaced upward. Then, when the pressure of time suction opening 40 or opening the pressure opening 44 of the (t 12) to the second pressure (P 2) close to the atmospheric pressure is the end of the second peeling process of the second time.

Subsequently, in the same manner, the controller 150 by sliding the cover 23, such as visual arrows 224 of the (t 12) to execute the second peeling process for the third time, and 21 shown in Fig 23b the suction opening ( 40) to the opening width (D 4) (cover 23, the front end (23a) and time (t 13) which after the opening the opening 45 of the width) between the end surface (22e), shown in Figure 23d of As shown by the arrow 225 of FIG. 21, the pressure of the opening opening 45 is changed from the second pressure P 2 close to atmospheric pressure to the first pressure P 1 close to vacuum, and the arrow 226 of FIG. 21. A portion of the semiconductor die 15 positioned immediately above the opening opening 45 is peeled from the surface 12a of the dicing sheet 12 as shown in FIG. 23D, and the opening opening 45 is shown at t 14 shown in FIG. 23D. Is switched from the first pressure P 1 close to vacuum to the second pressure P 2 close to atmospheric pressure, and the pressure of the suction opening 40 or the pressure of the opening opening 45 at time t 15 . This When the second pressure P 2 close to the atmospheric pressure is reached, the third peeling step of the third time is completed. Similarly, the controller 150, FIG. 23a~ even at time (t 15) as shown in 23e during the time (t 18) subjected to a second separation step of the fourth time, the cover 23, an opening width (D 5) to A portion of the semiconductor die 15 positioned immediately above the opening opening thereof is peeled off from the surface 12a of the dicing sheet 12.

When the lid 23 is slid to reach the opening width D 5 , the semiconductor die 15 is almost peeled off from the dicing sheet 12, so that the controller 150 displays the time (as shown in FIG. 23B). t 18 ) slides the lid 23 to open the opening width from D 5 to D 7 , and as shown in FIG. 22A, the collet 18 is raised to pick up the semiconductor die 15. When the semiconductor die 15 is picked up, the controller 150 returns the lid 23 to the initial position at time t 20 , and returns the pressure and suction pressure of the suction opening 40 to atmospheric pressure to end the pick-up operation.

The pick-up apparatus 500 of the semiconductor die of the above-described embodiment has a second pressure closer to the atmospheric pressure from the first pressure P 1 close to vacuum when the pressure of the suction opening 40 is picked up when the semiconductor die 15 is picked up. Each time the switch to the pressure P 2 , the lid 23 is slid to repeat the second peeling step of opening the suction opening 40 stepwise, and the dicing sheet 12 is stepwise removed from the semiconductor die 15. Since it peels, the effect that the damage of the semiconductor die at the time of pick-up can be suppressed can be acquired.

The control part 150 determines whether the area | region of the semiconductor die 15 located just above the opening opening part 43 is peeled from the surface 12a of the dicing sheet 12 in the 2nd peeling process demonstrated above. The 2nd peeling judgment process to judge is performed, and the area | region of the semiconductor die 15 located just above the opening opening part 43 peels from the surface 12a of the dicing sheet 12 in a 2nd peeling judgment process. If it is determined that it is not, the second retry step is performed. Hereinafter, a 2nd peeling determination process and a 2nd retry process are demonstrated. 25A to 25E showing the pick-up operation referred to in the following description differ only from FIGS. 23A to 23E during the time t 11 at the time t 8 indicating the operation of the second retry process. The operation from time t 0 to time t 8 is the same as that of FIGS. 23A to 23E, and the operation of time t 23 to time t 11 is time t 8 of FIGS. 23A to 23E. Is the same as t 20 .

As described above with reference to FIG. 18, as illustrated in FIG. 23E, the pressure of the suction opening 40 at a time t 7 is close to vacuum from the second pressure P 2 close to the atmospheric pressure. When it begins to fall toward the pressure P 1 , the semiconductor die 15 is bent and deformed to escape from the surface 18a of the collet 18, so that air flows into the suction hole 19, as shown in FIG. 1. The amount of air leak detected by the flow rate sensor 106 to be increased. Then, as shown in FIG. 23D, at the time t 8 , if the pressure of the suction opening 40 starts to rise from the first pressure P 1 close to vacuum to the second pressure P 2 close to atmospheric pressure, The amount of air leak detected by the flow rate sensor 106 shown in FIG. 1 starts to decrease, and as shown in FIG. 19, the semiconductor die 15 faces the surface of the collet 18 at time t 9 . When it adsorb | sucks to 18a, the air leak amount becomes zero, and the semiconductor die 15 of the area | region located just above the opening opening part 43 peels off from the surface 12a of the dicing sheet 12. As shown in FIG. On the other hand, when the semiconductor die 15 is hardly peeled off from the surface 12a of the dicing sheet 12, as shown in FIGS. 23A to 23E, the pressure of the suction opening 40 is close to vacuum. 1, even when raised to a pressure (P 1) a second pressure (P 2) close to the atmospheric pressure from the semiconductor die 15 is not a vacuum suction on the surface of the holding stuck on the dicing sheet 12, a collet 18, The air leak amount does not become zero even when time t 9 is reached.

Thus, when the semiconductor die 15 peels well from the dicing sheet 12, as shown in FIG. 24A, the amount of air leak rises from zero, and falls to zero, and the semiconductor die 15 falls to zero. When it does not peel well from the dicing sheet 12, as shown in FIG. 24C, after raising an air leak amount from zero, it does not fall to zero, maintaining some flow volume. Since this air leak amount is an analog amount, in order to perform peeling detection accurately, in the 2nd peeling determination process, the air leak as shown to FIG. 24B, FIG. 24D by differentiating the signal of the air leak amount shown to FIG. 24A, 24C is shown. Calculate the quantity derivative.

As shown in FIG. 24B, when the semiconductor die 15 is peeled off well, since the air leak amount rises from zero, it drops to zero. Therefore, the derivative value of the air leak amount becomes a positive value once it becomes a positive value. do. On the other hand, as shown in FIG. 24D, if the semiconductor die 15 is not peeled off well, since the air leak amount rises from zero, the value remains as it is, the derivative value of the air leak amount is once the positive value It becomes near zero. Thus, as shown in Figs. 24B and 24D, when the threshold range of the derivative value of the air leak amount is set between + S and -S, as shown in Fig. 24B, when the semiconductor die 15 is well detached, the air leak is The derivative of the quantity exceeds the threshold range twice (once in the plus direction and twice in the negative direction). On the other hand, when the semiconductor die 15 is not peeled off well, as shown in FIG. 24D, the derivative value of the air leakage amount exceeds the threshold once only to the positive side. Therefore, in the second peeling determination step, when the number of times that the derivative value of the air leakage amount during the time t 9 at time t 7 of FIG. 23E exceeds the predetermined threshold range becomes 2 (even), the semiconductor The die 15 is judged to be peeled off and proceeds to the next peeling step. When the number of times the derivative value of the air leak amount exceeds a predetermined threshold range is 1 (odd), the semiconductor die 15 is peeled off. It is judged that it is not, and it progresses to the 2nd retry process demonstrated next.

In the second retry step, the control unit 150 does not slide the lid 23 as shown in FIG. 25B, and the pressure of the suction opening 40 at time t 10 as shown in FIG. 25D. Is reduced from the second pressure P 2 close to atmospheric pressure to the first pressure P 1 close to vacuum. As shown in FIG. 25D, the pressure of the suction opening 40 is increased from the first pressure P 1 close to the vacuum to the second pressure P 2 close to the atmospheric pressure at the time t 11 (the second time ). 2 retry process). When the air leak amount decreases and becomes zero during the time t 12 at the time t 11 of FIG. 25E by the second retry process, the derivative value of the air leak amount at this time exceeds the predetermined threshold range once. (The threshold range on the negative side is exceeded). As a result, also since the time (t 7) at time (t 12), the differential value of the air leakage amount is the number of times exceeds the range preset threshold value 2 (an even number) for showing to 25e, the control unit 150 Judges that the semiconductor die 15 in the region located immediately above the opening opening 43 has been peeled from the surface 12a of the dicing sheet 12, and ends the second retry process, and then the second peeling process. Set the count to 0 before (clear the counter).

In the region where the differential value of the air leak amount in FIG. 24B becomes negative, when the differential value of the air leak amount reaches -S 1 (time t1 in FIGS. 24A and 24B), the differential value of the air leak amount is shown in FIG. 24A. Similarly, the actual collet air leak amount is beyond the maximum leak amount and starts to decrease. Therefore, after time t 1 of FIGS. 24A and 24B, it is predicted that the semiconductor die 15 faces the upright (the semiconductor die 15 faces the surface 18a of the collet 18). As such, the threshold (-S 1 ) may be said to be the turning point at which delamination is towards convergence. Therefore, when the differential value of the air leak amount reaches the threshold value (-S 1 ), the process may proceed to the next peeling process, thereby shortening the peeling time and reducing damage to the semiconductor die 15.

In addition, when performing a 2nd peeling process in multiple times, the control part 150 integrally counts the number of times the derivative value of the air leak amount exceeded the predetermined threshold range, and when the count number becomes even number, You may advance to a 2nd peeling process, and if it is odd numbered, you may advance to a 2nd retrying process. For example, when peeling of the predetermined part of the semiconductor die 15 is performed in the 1st 2nd peeling process, since the count of a derivative value becomes 2 (even), it progresses to the 2nd 2nd peeling process. In the second peeling process of the second time, when the predetermined part of the semiconductor die 15 is not peeled off, and the number of times the derivative value of the air leak amount exceeds the predetermined threshold range is one time, the integrated count number is 3 ( Odd number), the process does not proceed to the third second peeling process but proceeds to the second retry process. When the predetermined part of the semiconductor die 15 is peeled off in the second retry step, the integrated count count is 4 (since the number of times the derivative value of the air leak amount exceeds the predetermined threshold range is counted once. Even), and the flow proceeds to the third peeling process of the third time. In this way, by judging whether the integration count is even or odd to proceed to the next second peeling process, it is possible to judge only how many times the semiconductor die is peeled off in the second peeling process. .

Since the pick-up apparatus 500 of the semiconductor die of this embodiment confirms whether or not the semiconductor die 15 was peeled from the dicing sheet 12 as mentioned above, since it advances to the next peeling process, peeling operation | movement is carried out. It is possible to suppress damaging the semiconductor die 15 at the time.

The present invention is not limited to the embodiments described above, but includes all changes and modifications that do not deviate from the technical scope or the nature of the present invention defined by the claims.

10 wafer holder
11 wafer
12 dicing sheets
12a surface
12b
13 ring
14 clearance
15 semiconductor die
15a once
15b other end
16 expand ring
18 collets
18a surface
19 suction hole
20 stage
21 housing
22 Suction surface
22a home
22b convex
22c slope
22d rib
22e end face
22f side
22g guide surface
23 cover
23a tip
23b side
23c rear
23d surface
23e Chamfer
23f cancer
23g slope
23h flat
24 aircraft
25 drive
26 Suction groove
27 suction hole
40 suction opening
41 holes
42 micro aperture
43-45 opening opening
80 opening pressure switching mechanism
81, 91, 101 3-way valve
82, 92, 102 drive
83-85, 93-95, 103-105 Piping
90 adsorption pressure switching mechanism
100 suction apparatus
106 flow sensor
107 sheet displacement detection sensor
110 Wafer Holder Horizontal Drive
120 stages up and down drive
130 collet drive
140 vacuum device
150 controls
151 CPU
152 Memory
153 Instrument / Sensor Interface
154 data bus
155 control program
156 control data
157 Positioning Program
158 first peeling program
159 2nd peeling program
300 slider drive mechanism
321a stopper
326 first link
326a, 329a engagement home
326b shaft
326c roller
327, 328, 330, 330a pin
329 2nd Link
331 guide rail
332 slider
364 Grooves
370 piston
371 flange
381 motor
383 cam
500 pickup units.

Claims (16)

A pickup device for a semiconductor die for picking up a semiconductor die affixed to a surface of a dicing sheet,
Adsorption which has a 1st suction part which is a suction opening which adsorb | sucks the back surface of the said dicing sheet, and the 2nd suction part formed around the said 1st suction part, and which can adsorb | suck the back surface of the dicing sheet independently of the said 1st suction part. A stage containing a face,
A suction opening provided in said suction surface of said stage,
A cover that slides along the suction surface to open and close the suction opening;
An opening pressure switching mechanism for switching the pressure of the suction opening between a first pressure close to vacuum and a second pressure close to atmospheric pressure,
At the time of picking up the semiconductor die, the second suction unit maintains the suction pressure of the suction surface in a vacuum to suck the dicing sheet around the semiconductor die to be picked up, and the pressure of the suction opening is After switching from the second pressure to the first pressure, the lid is slid in the opening direction by a predetermined distance every time the pressure of the suction opening is switched from the first pressure to the second pressure. Pickup device of die. The method of claim 1,
When picking up the semiconductor die, the suction pressure of the suction surface is maintained in a vacuum, and the lid is slid in the opening direction by a predetermined distance. The method according to claim 1 or 2,
The cover is installed on the stage such that its surface is free to advance from the suction surface,
At the time of picking up the semiconductor die, the lid is micro-slid to make the suction opening small opening, the surface of the lid is advanced to a predetermined height higher than the suction surface, and then the suction pressure of the suction surface is increased. Vacuuming, and after a predetermined time elapses, the pressure of the suction opening is switched from the second pressure to the first pressure, and the dicing sheet positioned on the microscopically opening suction opening is peeled off from the semiconductor die. A pickup device for semiconductor dies. The method according to claim 1 or 2,
The opening pressure switching mechanism switches the pressure of the suction opening a plurality of times between the first pressure and the second pressure before first sliding the lid in the opening direction by a predetermined distance. Pickup device. The method according to claim 1 or 2,
The cover is installed on the stage such that its surface is free to advance from the suction surface,
And picking up the semiconductor die, wherein the lid is slid in a state in which the surface of the lid is advanced to a predetermined height higher than the suction surface. The method according to claim 1 or 2,
A peel detection means for detecting whether a part of the semiconductor die positioned immediately above the suction opening opened by sliding the lid is peeled from the surface of the dicing sheet;
When it is detected by the peeling detecting means that the part of the semiconductor die is not peeled from the dicing sheet, the pressure of the suction opening is changed from the first pressure to the second pressure without sliding the lid. And switching the pressure of the suction opening from the second pressure to the first pressure again after switching. The method of claim 6,
A collet for adsorbing a semiconductor die,
A suction mechanism connected to the collet and sucking air from the surface of the collet;
And a flow rate sensor for detecting suction air flow rate of the suction mechanism,
The peeling detecting means judges that the peeling signal that has differentiated the suction air flow rate signal detected by the flow rate sensor has been peeled off when the number of times that the differential signal exceeds a predetermined threshold range becomes an even number, and when it is odd, it has not been peeled off. A pickup device for semiconductor dies. The method according to claim 1 or 2,
The suction opening is provided in the vicinity of the end surface of the suction opening in contact with the tip of the cover when the suction opening is closed, and is located above the suction opening that is micro-opened when the suction opening is slightly opened by sliding the lid slightly. A sheet displacement detection sensor for detecting a displacement in the folding direction with respect to the suction surface of the dicing sheet,
After changing the suction pressure of the suction surface to vacuum and then switching the pressure of the suction opening from the second pressure to the first pressure after a predetermined time elapses, the sheet displacement detected by the sheet displacement detection sensor is predetermined. When the pressure is equal to or less than the threshold of, the adsorption pressure is set to open to the atmosphere, the pressure of the suction opening is switched from the first pressure to the second pressure, and then the adsorption pressure is set to vacuum again for a predetermined time. After the passage, the pressure of the suction opening is switched from the second pressure to the first pressure, so that a dicing sheet positioned on the micro-opening suction opening is peeled from the semiconductor die. . The method of claim 8,
And the sheet displacement detection sensor uses light of a wavelength in a region where the light transmittance of the dicing sheet is 0% to 30% as a light source. The method of claim 9,
The sheet displacement detection sensor is a pickup device for a semiconductor die, characterized in that a reflective optical fiber using a short wavelength LED of greater than 0 nm and less than or equal to 300 nm as a light source. A pickup method of a semiconductor die for picking up a semiconductor die affixed to a surface of a dicing sheet,
Adsorption which has a 1st suction part which is a suction opening which adsorb | sucks the back surface of the said dicing sheet, and the 2nd suction part formed around the said 1st suction part, and which can adsorb | suck the back surface of the dicing sheet independently of the said 1st suction part. A stage including a surface, a suction opening provided on the suction surface of the stage, a cover provided on the stage such that its surface is free to move out of the suction surface, and a cover for sliding along the suction surface to open and close the suction opening; And a step of preparing a pick-up device of a semiconductor die having an opening pressure switching mechanism for switching the pressure of the suction opening between a first pressure close to vacuum and a second pressure close to atmospheric pressure;
An alignment step of moving the stage in a direction along the suction surface such that the tip of the lid in the closed state coincides with one end of the semiconductor die to be picked up, and the width direction position of the lid coincides with the width direction position of the semiconductor die; ,
A holding step of sucking and holding a dicing sheet around the semiconductor die to be picked up by maintaining the suction pressure of the suction surface by a vacuum by the second suction unit when picking up the semiconductor die;
The lid is microslid, the suction opening is made micro-open, the surface of the lid is advanced to a predetermined height higher than the adsorption surface, and then the adsorption pressure of the adsorption surface is vacuumed, and a predetermined time elapses. A first peeling step of switching the pressure of the suction opening from the second pressure to the first pressure to peel the dicing sheet located on the microscopically opened suction opening from the semiconductor die;
The suction pressure of the suction surface is maintained in vacuum, the pressure of the suction opening is switched from the second pressure to the first pressure, and then the pressure of the suction opening is switched from the first pressure to the second pressure. Each time, the cover is slid in the opening direction by a predetermined distance in a state where the surface of the lid is advanced to a predetermined height higher than the suction surface, and the semiconductor die positioned immediately above the suction opening opened by the slide. It has a 2nd peeling process which peels a part from the said surface of the dicing sheet, The pick-up method of the semiconductor die characterized by the above-mentioned. The method of claim 11,
The opening pressure switching mechanism switches the pressure of the suction opening a plurality of times between the first pressure and the second pressure before first sliding the lid in the opening direction by a predetermined distance. Pickup method. The method of claim 11,
The pickup device of the semiconductor die is provided near the end surface of the suction opening where the tip of the lid is in contact when the suction opening is closed, and the micro-opening is performed when the suction opening is micro-opened by micro sliding the lid. And a sheet displacement detection sensor for detecting a displacement in a fold direction with respect to the suction surface of the dicing sheet positioned above the suction opening,
The first peeling step,
After changing the suction pressure of the suction surface to vacuum and then switching the pressure of the suction opening from the second pressure to the first pressure after a predetermined time elapses, the sheet displacement detected by the sheet displacement detection sensor is predetermined. In the case where the threshold value of? Is exceeded, it is determined that the dicing sheet located above the suction opening that has been micro-opened is peeled from the semiconductor die, and the sheet displacement detected by the sheet displacement detection sensor is equal to or less than a predetermined threshold value. The first peeling judging step of judging that the dicing sheet located on the suction opening opened minutely is not peeled from the semiconductor die;
In the case where it is determined that the dicing sheet positioned on the suction opening micro-opened in the first peeling determination step has not been peeled from the semiconductor die, the suction pressure is set to the atmospheric opening and the pressure of the suction opening is set to the first. After switching from 1 pressure to said 2nd pressure, after making said adsorption pressure into a vacuum again, after the predetermined time passed, the pressure of the suction opening was switched from the 2nd pressure to the 1st pressure, And a first retrying step of peeling the dicing sheet located above the suction opening from the semiconductor die. The method of claim 11,
The pick-up device of the semiconductor die includes a collet for absorbing the semiconductor die, a suction mechanism connected to the collet to suck air from the surface of the collet, a flow sensor for detecting a suction air flow rate of the suction mechanism,
The second peeling step,
When the number of times that the differential signal that differentiates the suction air flow rate signal detected by the flow rate sensor exceeds a predetermined threshold range becomes an even number, the semiconductor die of the semiconductor die positioned directly above the suction opening opened by sliding the lid. If it is determined that a part is peeled off from the surface of the dicing sheet, and if it is an odd number, a part of the semiconductor die located directly above the suction opening opened by sliding the lid is not peeled off from the surface of the dicing sheet. 2nd peeling judgment process which judges that it did not,
When it is determined by the second peeling determination step that the portion of the semiconductor die has not been peeled off from the surface of the dicing sheet, the pressure of the suction opening is adjusted from the first pressure without sliding the lid. A second retry to switch the pressure of the suction opening from the second pressure to the first pressure again after switching to the second pressure to peel the part of the semiconductor die from the surface of the dicing sheet; And picking up the semiconductor die. The method of claim 13,
And the sheet displacement detection sensor uses light of a wavelength in a region where light transmittance of the dicing sheet is 0% to 30% as a light source. The method of claim 15,
The sheet displacement detection sensor is a pickup method of a semiconductor die, characterized in that the reflective optical fiber using a short wavelength LED of more than 0nm 300nm or less as a light source.
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