KR102017133B1 - 금속-패시베이션화 ｃｍｐ 조성물 및 방법 - Google Patents

금속-패시베이션화 ｃｍｐ 조성물 및 방법 Download PDF

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KR102017133B1
KR102017133B1 KR1020187031790A KR20187031790A KR102017133B1 KR 102017133 B1 KR102017133 B1 KR 102017133B1 KR 1020187031790 A KR1020187031790 A KR 1020187031790A KR 20187031790 A KR20187031790 A KR 20187031790A KR 102017133 B1 KR102017133 B1 KR 102017133B1
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South Korea
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cmp
composition
polishing
film
metal
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Korean (ko)
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KR20180123167A (ko
Inventor
제이슨 켈러
판카지 싱
블라스타 브루식
Original Assignee
캐보트 마이크로일렉트로닉스 코포레이션
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Priority claimed from US13/004,113 external-priority patent/US8435421B2/en
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Publication of KR20180123167A publication Critical patent/KR20180123167A/ko
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K8/00—Compositions for drilling of boreholes or wells; Compositions for treating boreholes or wells, e.g. for completion or for remedial operations
    • C09K8/52—Compositions for preventing, limiting or eliminating depositions, e.g. for cleaning
    • C09K8/528—Compositions for preventing, limiting or eliminating depositions, e.g. for cleaning inorganic depositions, e.g. sulfates or carbonates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions
    • H01L21/30625—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
KR1020187031790A 2011-01-11 2012-01-10 금속-패시베이션화 ｃｍｐ 조성물 및 방법 Active KR102017133B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/004,113 2011-01-11
US13/004,113 US8435421B2 (en) 2007-11-27 2011-01-11 Metal-passivating CMP compositions and methods
PCT/US2012/020737 WO2012096931A2 (en) 2011-01-11 2012-01-10 Metal-passivating cmp compositions and methods

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020137021062A Division KR102077618B1 (ko) 2011-01-11 2012-01-10 금속-패시베이션화 ｃｍｐ 조성물 및 방법

Publications (2)

Publication Number Publication Date
KR20180123167A KR20180123167A (ko) 2018-11-14
KR102017133B1 true KR102017133B1 (ko) 2019-09-02

Family

ID=46507631

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020187031790A Active KR102017133B1 (ko) 2011-01-11 2012-01-10 금속-패시베이션화 ｃｍｐ 조성물 및 방법
KR1020137021062A Active KR102077618B1 (ko) 2011-01-11 2012-01-10 금속-패시베이션화 ｃｍｐ 조성물 및 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020137021062A Active KR102077618B1 (ko) 2011-01-11 2012-01-10 금속-패시베이션화 ｃｍｐ 조성물 및 방법

Country Status (9)

Country Link
EP (1) EP2663604B1 (https=)
JP (1) JP5992925B2 (https=)
KR (2) KR102017133B1 (https=)
CN (1) CN103298903B (https=)
IL (1) IL227384A (https=)
MY (1) MY163010A (https=)
SG (1) SG191909A1 (https=)
TW (1) TWI462981B (https=)
WO (1) WO2012096931A2 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10029345B2 (en) * 2015-07-13 2018-07-24 Cabot Microelectronics Corporation Methods and compositions for processing dielectric substrate
JP6989493B2 (ja) * 2015-09-03 2022-01-05 シーエムシー マテリアルズ，インコーポレイティド 誘電体基板を加工するための方法及び組成物
JP6901297B2 (ja) 2017-03-22 2021-07-14 株式会社フジミインコーポレーテッド 研磨用組成物

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005167231A (ja) * 2003-11-14 2005-06-23 Showa Denko Kk 研磨組成物および研磨方法

Family Cites Families (18)

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US6623355B2 (en) * 2000-11-07 2003-09-23 Micell Technologies, Inc. Methods, apparatus and slurries for chemical mechanical planarization
US6866792B2 (en) * 2001-12-12 2005-03-15 Ekc Technology, Inc. Compositions for chemical mechanical planarization of copper
GB2393447B (en) * 2002-08-07 2006-04-19 Kao Corp Polishing composition
US7071105B2 (en) * 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
US7485162B2 (en) * 2003-09-30 2009-02-03 Fujimi Incorporated Polishing composition
US20060063687A1 (en) * 2004-09-17 2006-03-23 Minsek David W Composition and process for ashless removal of post-etch photoresist and/or bottom anti-reflective material on a substrate
TW200714696A (en) * 2005-08-05 2007-04-16 Advanced Tech Materials High throughput chemical mechanical polishing composition for metal film planarization
US20070037491A1 (en) * 2005-08-12 2007-02-15 Yuzhuo Li Chemically modified chemical mechanical polishing pad, process of making a modified chemical mechanical polishing pad and method of chemical mechanical polishing
JP2008192930A (ja) * 2007-02-06 2008-08-21 Fujifilm Corp 金属研磨用組成物及びそれを用いた化学的機械的研磨方法
US7931714B2 (en) * 2007-10-08 2011-04-26 Uwiz Technology Co., Ltd. Composition useful to chemical mechanical planarization of metal
JP5277640B2 (ja) * 2007-10-17 2013-08-28 日立化成株式会社 Ｃｍｐ用研磨液及び研磨方法
US7955520B2 (en) * 2007-11-27 2011-06-07 Cabot Microelectronics Corporation Copper-passivating CMP compositions and methods
US8337716B2 (en) * 2008-01-23 2012-12-25 Uwiz Technology Co., Ltd. Sarcosine compound used as corrosion inhibitor
US8247327B2 (en) * 2008-07-30 2012-08-21 Cabot Microelectronics Corporation Methods and compositions for polishing silicon-containing substrates
CN101747841A (zh) * 2008-12-05 2010-06-23 安集微电子（上海）有限公司 一种化学机械抛光液
TWI454561B (zh) * 2008-12-30 2014-10-01 Uwiz Technology Co Ltd A polishing composition for planarizing the metal layer
CN101928520B (zh) * 2009-06-19 2014-03-12 盟智科技股份有限公司 用于平坦化金属层的研磨组成物
JP2012069785A (ja) * 2010-09-24 2012-04-05 Fujimi Inc 研磨用組成物および研磨方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005167231A (ja) * 2003-11-14 2005-06-23 Showa Denko Kk 研磨組成物および研磨方法

Also Published As

Publication number Publication date
TW201235428A (en) 2012-09-01
KR20140047015A (ko) 2014-04-21
MY163010A (en) 2017-07-31
IL227384A0 (en) 2013-09-30
JP5992925B2 (ja) 2016-09-14
KR20180123167A (ko) 2018-11-14
EP2663604A2 (en) 2013-11-20
SG191909A1 (en) 2013-08-30
CN103298903A (zh) 2013-09-11
KR102077618B1 (ko) 2020-02-14
JP2014507799A (ja) 2014-03-27
TWI462981B (zh) 2014-12-01
CN103298903B (zh) 2015-11-25
WO2012096931A2 (en) 2012-07-19
IL227384A (en) 2017-05-29
EP2663604A4 (en) 2016-04-27
EP2663604B1 (en) 2020-07-01
WO2012096931A3 (en) 2012-11-01

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