KR102000746B1 - 편심 타겟 부정확도를 추정 및 정정하기 위한 방법 - Google Patents

편심 타겟 부정확도를 추정 및 정정하기 위한 방법 Download PDF

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Publication number
KR102000746B1
KR102000746B1 KR1020157007740A KR20157007740A KR102000746B1 KR 102000746 B1 KR102000746 B1 KR 102000746B1 KR 1020157007740 A KR1020157007740 A KR 1020157007740A KR 20157007740 A KR20157007740 A KR 20157007740A KR 102000746 B1 KR102000746 B1 KR 102000746B1
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South Korea
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metrology
measurement
tool
target
measured
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Korean (ko)
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KR20150052128A (ko
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에란 아미트
다나 클레인
구이 코헨
아미르 위드만
님로드 슈알
암논 마나쎈
누리엘 아미르
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케이엘에이-텐코 코포레이션
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    • H01L22/12—
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
    • G01B21/02—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness
    • G01B21/04—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness by measuring coordinates of points
    • G01B21/042—Calibration or calibration artifacts
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020157007740A 2012-09-05 2013-09-05 편심 타겟 부정확도를 추정 및 정정하기 위한 방법 Active KR102000746B1 (ko)

Applications Claiming Priority (11)

Application Number Priority Date Filing Date Title
US201261697159P 2012-09-05 2012-09-05
US201261696963P 2012-09-05 2012-09-05
US61/696,963 2012-09-05
US61/697,159 2012-09-05
US201361764441P 2013-02-13 2013-02-13
US61/764,441 2013-02-13
US201361766320P 2013-02-19 2013-02-19
US61/766,320 2013-02-19
US13/834,915 US9329033B2 (en) 2012-09-05 2013-03-15 Method for estimating and correcting misregistration target inaccuracy
US13/834,915 2013-03-15
PCT/US2013/058254 WO2014039674A1 (en) 2012-09-05 2013-09-05 Method for estimating and correcting misregistration target inaccuracy

Publications (2)

Publication Number Publication Date
KR20150052128A KR20150052128A (ko) 2015-05-13
KR102000746B1 true KR102000746B1 (ko) 2019-07-16

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KR1020157007740A Active KR102000746B1 (ko) 2012-09-05 2013-09-05 편심 타겟 부정확도를 추정 및 정정하기 위한 방법

Country Status (6)

Country Link
US (1) US9329033B2 (https=)
JP (1) JP6215330B2 (https=)
KR (1) KR102000746B1 (https=)
CN (1) CN104736962B (https=)
TW (1) TWI591342B (https=)
WO (1) WO2014039674A1 (https=)

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CN116936393B (zh) * 2016-02-24 2024-12-20 科磊股份有限公司 光学计量的准确度提升
US10372114B2 (en) * 2016-10-21 2019-08-06 Kla-Tencor Corporation Quantifying and reducing total measurement uncertainty
US10527952B2 (en) * 2016-10-25 2020-01-07 Kla-Tencor Corporation Fault discrimination and calibration of scatterometry overlay targets
US10191112B2 (en) * 2016-11-18 2019-01-29 Globalfoundries Inc. Early development of a database of fail signatures for systematic defects in integrated circuit (IC) chips
US10551320B2 (en) * 2017-01-30 2020-02-04 Kla-Tencor Corporation Activation of wafer particle defects for spectroscopic composition analysis
CN110383442B (zh) * 2017-02-28 2023-10-10 科磊股份有限公司 确定随机行为对叠加计量数据的影响
EP3435162A1 (en) * 2017-07-28 2019-01-30 ASML Netherlands B.V. Metrology method and apparatus and computer program
US10401738B2 (en) * 2017-08-02 2019-09-03 Kla-Tencor Corporation Overlay metrology using multiple parameter configurations
KR102390687B1 (ko) * 2017-09-11 2022-04-26 에이에스엠엘 네델란즈 비.브이. 리소그래피 프로세스들에서의 계측
EP3492985A1 (en) * 2017-12-04 2019-06-05 ASML Netherlands B.V. Method of determining information about a patterning process, method of reducing error in measurement data, method of calibrating a metrology process, method of selecting metrology targets
US10533848B2 (en) * 2018-03-05 2020-01-14 Kla-Tencor Corporation Metrology and control of overlay and edge placement errors
WO2019236084A1 (en) 2018-06-07 2019-12-12 Kla-Tencor Corporation Overlay measurement using phase and amplitude modeling
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US20220244649A1 (en) * 2019-07-04 2022-08-04 Asml Netherlands B.V. Sub-field control of a lithographic process and associated apparatus
CN110796107A (zh) * 2019-11-04 2020-02-14 南京北旨智能科技有限公司 电力巡检图像缺陷识别方法和系统、电力巡检无人机
US11487929B2 (en) 2020-04-28 2022-11-01 Kla Corporation Target design process for overlay targets intended for multi-signal measurements
KR102908887B1 (ko) 2020-06-25 2026-01-06 케이엘에이 코포레이션 반도체 디바이스의 오정합 및 비대칭을 개선하기 위한 웨이블릿 시스템 및 방법
US12100574B2 (en) 2020-07-01 2024-09-24 Kla Corporation Target and algorithm to measure overlay by modeling back scattering electrons on overlapping structures
JP7471506B2 (ja) 2020-07-20 2024-04-19 アプライド マテリアルズ インコーポレイテッド 光学装置及び光学装置計測の方法
US11454894B2 (en) * 2020-09-14 2022-09-27 Kla Corporation Systems and methods for scatterometric single-wavelength measurement of misregistration and amelioration thereof
US12020970B2 (en) 2021-09-22 2024-06-25 International Business Machines Corporation Metrology data correction
KR102519813B1 (ko) 2022-10-17 2023-04-11 (주)오로스테크놀로지 오버레이 계측 장치 및 방법과 이를 위한 시스템 및 프로그램
TWI884023B (zh) * 2024-07-02 2025-05-11 創意電子股份有限公司 掃描捕捉限制的生成裝置及其生成方法

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Also Published As

Publication number Publication date
US20140060148A1 (en) 2014-03-06
WO2014039674A1 (en) 2014-03-13
JP6215330B2 (ja) 2017-10-18
CN104736962A (zh) 2015-06-24
CN104736962B (zh) 2017-10-03
TW201418711A (zh) 2014-05-16
US9329033B2 (en) 2016-05-03
JP2015534267A (ja) 2015-11-26
TWI591342B (zh) 2017-07-11
KR20150052128A (ko) 2015-05-13

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