KR101994726B1 - Chip electronic component and manufacturing method thereof - Google Patents

Abstract

The present invention relates to a chip electronic component and a method of manufacturing the same, and more particularly, to a chip electronic component and a method of manufacturing the chip electronic component. And a method of manufacturing the same.

Description

Technical Field [0001] The present invention relates to a chip electronic component and a manufacturing method thereof,

The present invention relates to a chip electronic component and a manufacturing method thereof.

An inductor, which is one of chip electronic components, is a typical passive element that removes noise by forming an electronic circuit together with a resistor and a capacitor. The inductor amplifies a signal of a specific frequency band in combination with a capacitor using electromagnetic characteristics A resonance circuit, a filter circuit, and the like.

In recent years, miniaturization and thinning of IT devices such as various communication devices and display devices have been accelerated. Researches for miniaturization and thinning of various devices such as inductors, capacitors, and transistors employed in IT devices have been continuously carried out . Thus, the inductor has been rapidly switched to a chip capable of miniaturization and high density automatic surface mounting, and the development of a thin film type inductor in which a magnetic powder is mixed with a resin on a coil pattern formed by plating on the upper and lower surfaces of a thin insulating substrate .

The DC resistance (Rdc), which is one of the main characteristics of the inductor, becomes lower as the cross-sectional area of the coil becomes larger. Therefore, in order to lower the DC resistance Rdc and improve the inductance, it is necessary to increase the cross-sectional area of the inner coil.

There are two ways to increase the cross-sectional area of the coil: increase the coil width and increase the coil height.

When the width of the coil is increased, there is a great possibility that a short between the coil and the coil is generated, a limit of the number of turns that can be realized in the inductor chip is generated, and the area occupied by the magnetic body is reduced. There is a limit to implementation.

Therefore, the inner coil of the thin film type inductor is required to have a structure having a high aspect ratio (AR) which increases the coil height. The aspect ratio (AR) of the inner coil is a value obtained by dividing the height of the coil by the width of the coil. As the increase in the height of the coil is larger than the increase in the width of the coil, a higher aspect ratio (AR) can be realized.

In order to realize the high aspect ratio (AR) of the inner coil, the width direction growth of the coil should be suppressed and the growth in the height direction should be promoted.

However, in the conventional pattern plating method using a plating resist, in order to form a coil with a high height, a plating resist must be formed at a high height. In order to maintain the shape of the plating resist, .

Further, in the conventional electroplating method, a short between coils occurs due to isotropic growth in which the width direction is grown along with the height direction of the coils, and there is a limitation in realizing a high aspect ratio (AR) of the coils.

Japanese Patent Application Laid-Open No. 2006-278479

One embodiment of the present invention relates to a chip electronic component having a structure capable of realizing a high aspect ratio (AR) by increasing the height of the coil with respect to the width without occurrence of a short between coils, and a manufacturing method thereof.

One embodiment of the present invention includes a magnetic body including an insulating substrate, an inner coil formed on at least one surface of the insulating substrate, and an outer electrode formed on one end surface of the magnetic body and connected to the inner coil, The inner coil portion includes a first coil pattern formed on the insulating substrate; And a second coil pattern formed on the first coil pattern, wherein a width of the second coil pattern is narrower than a width of the first coil pattern.

The inner coil portion may include a third coil pattern formed on the first coil pattern and formed to cover the second coil pattern.

The width of the second coil pattern may be 0.5 to 0.9 times the width of the first coil pattern.

The width of the first coil pattern may be 80 [mu] m to 120 [mu] m.

The width of the second coil pattern may be 40 탆 to 60 탆.

The coil-to-coil spacing of the inner coil part may be between 5 탆 and 20 탆.

The inner coil portion may be formed of any one selected from the group consisting of Ag, Pd, Al, Ni, Ti, Au, Cu, Or more.

The first coil pattern and the second coil pattern may be formed of the same metal.

The aspect ratio of the internal coil part may be 1.1 or more.

According to another aspect of the present invention, there is provided a method of manufacturing a magnetic memory device, comprising: forming an inner coil part on at least one surface of an insulating substrate; forming a magnetic body body by laminating magnetic material layers on upper and lower surfaces of the insulating substrate on which the inner coil part is formed; And forming an outer electrode to be connected to the inner coil part on at least one end face of the magnetic body body, wherein the step of forming the inner coil part comprises: forming a first coil pattern on the insulating substrate, And a second coil pattern having a width smaller than the width of the first coil pattern is formed on the first coil pattern.

Wherein the forming of the inner coil part comprises: forming a first plating resist having an opening for forming a first coil pattern on the insulating substrate; Filling the opening for forming the first coil pattern to form a first coil pattern; Forming a second plating resist having an opening for forming a second coil pattern so that the first coil pattern is exposed on the first plating resist and the first coil pattern; Filling the opening for forming the second coil pattern to form a second coil pattern; And removing the first plating resist and the second plating resist, wherein the opening for forming the second coil pattern may be narrower than the width of the opening for forming the first coil pattern.

The width of the opening for forming the second coil pattern may be 0.5 to 0.9 times the width of the opening for forming the first coil pattern.

In the forming of the inner coil part, electroplating may be performed on the first coil pattern to form a third coil pattern covering the second coil pattern.

The width of the first coil pattern may be 80 [mu] m to 120 [mu] m.

The width of the second coil pattern may be 40 탆 to 60 탆.

The coil-to-coil spacing of the inner coil part may be between 5 탆 and 20 탆.

The first coil pattern forming opening and the second coil pattern forming opening may be formed of one selected from the group consisting of Ag, Pd, Al, Ni, Ti, Au, ), And platinum (Pt).

The chip electronic component according to an embodiment of the present invention can prevent short-circuit between coils and increase the height of the coils with respect to the width, thereby realizing an internal coil structure with a high aspect ratio (AR).

As a result, the cross-sectional area of the coil becomes larger, the DC resistance Rdc decreases, and the inductance can be improved.

1 is a schematic perspective view showing an inner coil portion of a chip electronic component according to an embodiment of the present invention.
2 is a sectional view taken along a line I-I 'in Fig.
3 is an enlarged schematic view of an embodiment of the portion A in Fig.
4 is a process diagram showing a method of manufacturing a chip electronic component according to an embodiment of the present invention.
5 to 10 are views sequentially showing a method of manufacturing a chip electronic component according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described with reference to specific embodiments and the accompanying drawings. However, the embodiments of the present invention can be modified into various other forms, and the scope of the present invention is not limited to the embodiments described below. Furthermore, embodiments of the present invention are provided to more fully explain the present invention to those skilled in the art. Accordingly, the shapes and sizes of the elements in the drawings may be exaggerated for clarity of description, and the elements denoted by the same reference numerals in the drawings are the same elements.

It is to be understood that, although the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, Will be described using the symbols.

Throughout the specification, when an element is referred to as "comprising ", it means that it can include other elements as well, without excluding other elements unless specifically stated otherwise.

Chip electronic components

Hereinafter, a chip electronic component according to an embodiment of the present invention will be described, but the present invention is not limited thereto.

Fig. 1 is a schematic perspective view showing an inner coil portion of a chip electronic component according to an embodiment of the present invention. Fig. 2 is a sectional view taken along line I-I 'of Fig. 1, Is an enlarged schematic diagram of an embodiment.

Referring to Figs. 1 to 3, a thin film chip inductor 100 for use in a power supply line of a power supply circuit as an example of a chip electronic component is disclosed. The chip electronic component may be suitably applied to chip inductors, chip beads, chip filters, and the like.

The thin film type inductor 100 includes a magnetic body 50, an insulating substrate 20, an inner coil part 40, and an external electrode 80.

The magnetic substance body 50 forms the appearance of the thin film type inductor 100, and is not limited as long as it is a material exhibiting magnetic characteristics, and may be formed by filling, for example, ferrite or a metal soft magnetic material. As the ferrite, Mn-Zn ferrite, Ni-Zn ferrite, Ni-Zn-Cu ferrite, Mn-Mg ferrite, Ba ferrite or Li ferrite can be used. Fe-Si-B-Cr based amorphous metal powder material may be used, but is not limited thereto.

When the direction of the hexahedron is defined to clearly explain the embodiment of the present invention, L, W, and T shown in FIG. 1 indicate the longitudinal direction, the width direction, and the thickness direction, respectively . The magnetic body 50 may have a rectangular parallelepiped shape whose length in the longitudinal direction is greater than the length in the width direction.

The insulating substrate 20 formed inside the magnetic body 50 may be formed of a thin film, for example, a PCB substrate, a ferrite substrate, a metal soft magnetic substrate, or the like.

The central portion of the insulating substrate 20 penetrates to form a hole, and the hole may be filled with a magnetic material such as ferrite or a metal-based soft magnetic material to form a core portion. The inductance (L) can be improved by forming the core portion filled with the magnetic body.

An inner coil part 40 having a coil-shaped pattern may be formed on one surface of the insulating substrate 20 and an inner coil part 40 having a coil-shaped pattern may be formed on the opposite surface of the insulating substrate 20 .

A coil pattern may be formed in a spiral shape on the inner coil part 40 and an inner coil part 40 formed on a surface opposite to the one surface of the insulating substrate 20 may be formed on the insulating substrate 20 (Not shown).

The inner coil part 40 includes a first coil pattern 41 formed on the insulating substrate 20, a second coil pattern 42 formed on the first coil pattern 41, and a first coil pattern 41 The second coil pattern 42 may include a third coil pattern 43 formed to cover the second coil pattern 42. The width of the second coil pattern 42 may be greater than the width of the first coil pattern 41, As shown in FIG.

The first coil pattern 41 may be formed by forming a patterned plating resist on the insulating substrate 20 and filling the opening with a conductive metal.

After forming the first coil pattern 41, a secondary plating resist is formed on the first coil pattern 41 so that the first coil pattern 41 is exposed, and the opening portion on the exposed first coil pattern is covered with a conductive metal So that the second coil pattern 42 can be formed.

At this time, the width w2 of the second coil pattern 42 is narrower than the width w1 of the first coil pattern 41, and the second coil pattern 42 is formed on the first coil pattern 41 The inner coil part 40 of a high aspect ratio (AR) can be realized by promoting the growth in the height direction while suppressing the width direction growth of the coils by forming the third coil pattern 43 so as to cover the coil part.

The third coil pattern 43 may be formed by performing electroplating using the first coil pattern 41 and the second coil pattern 42 as a seed layer.

The width w2 of the second coil pattern 42 may be 0.5 to 0.9 times the width w1 of the first coil pattern 41. [ When the width w2 of the second coil pattern 42 is less than 0.5 times the width w1 of the first coil pattern 41, there is a limitation in implementing a coil having a high aspect ratio AR, The third coil pattern may cover not only the second coil pattern but also the first coil pattern and grow isotropically to cause a short between the coils and the aspect ratio AR may be lowered.

The width w1 of the first coil pattern 41 may be 80 탆 to 120 탆 and the width w2 of the second coil pattern 42 may be 40 탆 to 60 탆.

Further, the coil-to-coil spacing d1 of the inner coil part 40 may be 5 to 20 占 퐉.

The inner coil part 40 including the first coil pattern 41, the second coil pattern 42 and the third coil pattern 43 may be formed to include a metal having a good electrical conductivity. For example, And may be formed of Ag, Pd, Al, Ni, Ti, Au, Cu, Pt, or an alloy thereof.

The first coil pattern 41, the second coil pattern 42, and the third coil pattern 43 may be formed of the same metal and may be formed of copper (Cu) at the most wind.

The inner coil part 40 is formed so as to cover the first coil pattern 41, the second coil pattern 42 having a smaller width than the first coil pattern 41 and the second coil pattern 42 And a third coil pattern 43 formed on the first coil pattern 41 so as to realize a high aspect ratio AR. For example, the aspect ratio AR / W). ≪ / RTI >

The inner coil part 40 may be covered with an insulating layer 30.

The insulating layer 30 can be formed by a known method such as a screen printing method, a photoresist (PR) exposure, a process through development, and a spray coating process. The inner coil part 40 may not be in direct contact with the magnetic material constituting the magnetic body 50 covered with the insulating layer 30. [

One end of the inner coil part 40 formed on one surface of the insulating substrate 20 may be exposed in one longitudinal end surface of the magnetic body 50, One end of the portion 40 may be exposed in the other longitudinal cross-section of the magnet body 50.

The external electrodes 80 may be formed on both end faces in the longitudinal direction so as to be connected to the internal coil part 40 exposed at both longitudinal end faces of the magnetic body 50. The external electrode 80 may be formed to extend to both end faces in the thickness direction of the magnetic body 50 and / or both end faces in the width direction.

The outer electrode 80 may be formed of a metal having excellent electrical conductivity. For example, the outer electrode 80 may be formed of a metal such as Ni, Cu, Sn, or Ag, As shown in FIG.

Method of manufacturing chip electronic components

FIG. 4 is a process chart showing a method of manufacturing a chip electronic component according to an embodiment of the present invention, and FIGS. 5 to 10 sequentially illustrate a method of manufacturing a chip electronic component according to an embodiment of the present invention.

Referring to FIG. 4, an inner coil part 40 is formed on at least one surface of an insulating substrate 20.

The insulating substrate 20 is not particularly limited and may be, for example, a PCB substrate, a ferrite substrate, a metal-based soft magnetic substrate, or the like, and may have a thickness of 40 to 100 μm.

Referring to FIG. 5, a first plating resist 60 having an opening 61 for forming a first coil pattern may be formed on an insulating substrate 20 by a method of forming the inner coil part 40.

The first plating resist 60 may be a conventional photosensitive resist film, such as a dry film resist, but is not particularly limited thereto.

Referring to FIG. 6, the first coil pattern 41 may be formed by filling an electrically conductive metal by applying a process such as electroplating to the opening 61 for forming a first coil pattern.

The first coil pattern 41 may be formed of a metal having excellent electrical conductivity and may be formed of a metal such as Ag, Pd, Al, Ni, Ti, ), Copper (Cu), platinum (Pt), an alloy thereof, or the like.

The width of the first coil pattern 41 may be 80 to 120 탆.

7, a second plating resist 70 having an opening 71 for forming a second coil pattern on the first plating resist 60 and the first coil pattern 41 can be formed.

The second plating resist 70 may be a conventional photosensitive resist film, such as a dry film resist, but is not particularly limited thereto.

The first coil pattern 41 may be exposed through the second coil pattern forming opening 71. [ At this time, the width of the second coil pattern forming opening 71 may be narrower than the width of the first coil pattern 41 or the width of the opening 61 for forming the first coil pattern.

Referring to FIG. 8, the second coil pattern 42 can be formed by filling the opening portion 71 for forming the second coil pattern with electroconductive metal by applying a process such as electroplating.

The second coil pattern 42 may be formed of a metal having excellent electrical conductivity and may be formed of a metal such as Ag, Pd, Al, Ni, Ti, ), Copper (Cu), platinum (Pt), an alloy thereof, or the like. More preferably, the second coil pattern 42 is formed of the same metal as the first coil pattern 41, thereby improving the connectivity between the coil patterns and the electrical conductivity.

The width of the second coil pattern 42 may be narrower than the width of the first coil pattern 41. For example, the width of the second coil pattern 42 may be smaller than the width of the first coil pattern 41 0.5 to 0.9 times. When the width w2 of the second coil pattern 42 is less than 0.5 times the width w1 of the first coil pattern 41, there is a limitation in implementing a coil having a high aspect ratio AR, The third coil pattern may cover not only the second coil pattern but also the first coil pattern and grow isotropically to cause a short between the coils and the aspect ratio AR may be lowered.

The width of the second coil pattern 42 can be 40 占 퐉 to 60 占 퐉.

Referring to FIG. 9, the first plating resist 60 and the second plating resist 70 can be removed.

Referring to FIG. 10, a third coil pattern 43 may be formed to cover the second coil pattern 42 by performing electroplating on the first coil pattern 41.

The third coil pattern 43 may be formed by using the first coil pattern 41 and the second coil pattern 42 as a seed layer.

The width of the second coil pattern 42 is narrower than the width of the first coil pattern 41 and the third coil pattern 43 is formed on the first coil pattern 41 so as to cover the second coil pattern 42. [ It is possible to form the inner coil part 40 having a high aspect ratio (AR) by promoting the growth in the height direction while suppressing the widthwise growth of the coil.

The third coil pattern 43 may be formed of a metal having excellent electrical conductivity and may be formed of a metal such as Ag, Pd, Al, Ni, Ti, ), Copper (Cu), platinum (Pt), an alloy thereof, or the like. More preferably, the third coil pattern 43 is formed of the same metal as the first coil pattern 41 and the second coil pattern 42, thereby improving the connectivity between the coil patterns and the electrical conductivity.

The inner coil part 40 including the first coil pattern 41, the second coil pattern 42 and the third coil pattern 43 thus formed has an aspect ratio AR (T / W) of 1.1 or more And the spacing between the coils may be between 5 탆 and 20 탆.

A hole is formed in a part of the insulating substrate 20 and a conductive material is filled to form a via electrode 45. The insulating substrate 20 is formed on the opposite surface of the insulating substrate 20 through the via electrode 45 The inner coil portion 40 can be electrically connected.

A drill, a laser, a sandblast, a punching process, or the like may be performed on the center of the insulating substrate 20 to form a hole through the insulating substrate.

After forming the inner coil part 40, an insulating layer 30 covering the inner coil part 40 can be formed. The insulating layer 30 can be formed by a known method such as a screen printing method, a photoresist (PR) exposure, a process through development, a spray coating process, and the like, but is not limited thereto.

Next, the magnetic substance body 50 is formed by laminating magnetic substance layers on the upper and lower portions of the insulating substrate 20 on which the inner coil section 40 is formed.

The magnetic substance body layer 50 may be formed by laminating the magnetic substance layers on both surfaces of the insulating substrate 20 and pressing them through a lamination method or an hydrostatic pressing method. At this time, the core may be formed by allowing the hole to be filled with a magnetic material.

Next, the outer electrode 80 may be formed to be connected to the inner coil part 40 exposed on at least one end face of the magnetic body 50.

The external electrode 80 may be formed using a paste containing a metal having excellent electrical conductivity. For example, the external electrode 80 may be formed of a metal such as nickel (Ni), copper (Cu), tin (Sn) An alloy thereof, or the like. The method of forming the external electrode 80 may be performed by not only printing but also dipping according to the shape of the external electrode 80.

In addition, the same parts as those of the above-described chip electronic component according to the embodiment of the present invention will be omitted here.

The present invention is not limited to the above-described embodiment and the accompanying drawings, but is intended to be limited by the appended claims.

It will be apparent to those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. something to do.

100: Thin-film type inductor 50:
20: insulating substrate 60: first plating resist
30: insulating layer 61: opening for forming first coil pattern
40: internal coil part 70: second plating resist
41: first coil pattern 71: second coil pattern forming opening
42: second coil pattern
43: third coil pattern
45: Via electrode

Claims (17)

An inner coil portion formed on at least one surface of the insulating substrate and an outer electrode formed on one end surface of the magnetic body body and connected to the inner coil portion,
The inner coil portion
A first coil pattern formed on the insulating substrate;
A second coil pattern formed on the first coil pattern; And
And a third coil pattern formed on the first coil pattern and formed to cover the second coil pattern,
The width of the second coil pattern is formed to be narrower than the width of the first coil pattern,
And the third coil pattern is in contact with the first and second coil patterns.
delete The method according to claim 1,
And the width of the second coil pattern is 0.5 to 0.9 times the width of the first coil pattern.
The method according to claim 1,
Wherein a width of the first coil pattern is 80 占 퐉 to 120 占 퐉.
The method according to claim 1,
And the width of the second coil pattern is 40 占 퐉 to 60 占 퐉.
The method according to claim 1,
Wherein an interval between the coils of the inner coil part is 5 占 퐉 to 20 占 퐉.
The method according to claim 1,
The inner coil portion may be formed of any one selected from the group consisting of Ag, Pd, Al, Ni, Ti, Au, Cu, A chip electronic component comprising the above.
The method according to claim 1,
Wherein the first coil pattern and the second coil pattern are formed of the same metal.
The method according to claim 1,
Wherein the aspect ratio of the internal coil portion is 1.1 or more.
Forming an inner coil portion on at least one surface of the insulating substrate;
Forming a magnetic body body by laminating magnetic body layers on upper and lower portions of the insulating substrate on which the inner coil portion is formed; And
And forming an external electrode on at least one end face of the magnetic body body so as to be connected to the internal coil part,
Wherein forming the inner coil section comprises:
Forming a first coil pattern on the insulating substrate, forming a second coil pattern having a width smaller than the width of the first coil pattern on the first coil pattern,
Wherein forming the inner coil section comprises:
Forming a first plating resist having an opening for forming a first coil pattern on the insulating substrate;
Filling the opening for forming the first coil pattern to form a first coil pattern;
Forming a second plating resist having an opening for forming a second coil pattern so that the first coil pattern is exposed on the first plating resist and the first coil pattern;
Filling the opening for forming the second coil pattern to form a second coil pattern;
Performing electroplating on the first coil pattern to form a third coil pattern covering the second coil pattern; And
Removing the first plating resist and the second plating resist,
The width of the opening for forming the second coil pattern is narrower than the width of the opening for forming the first coil pattern,
And the third coil pattern is in contact with the first and second coil patterns.
delete 11. The method of claim 10,
And the width of the opening for forming the second coil pattern is 0.5 to 0.9 times the width of the opening for forming the first coil pattern.
delete 11. The method of claim 10,
Wherein the width of the first coil pattern is 80 占 퐉 to 120 占 퐉.
11. The method of claim 10,
And the width of the second coil pattern is 40 占 퐉 to 60 占 퐉.
11. The method of claim 10,
Wherein an interval between the coils of the inner coil part is 5 占 퐉 to 20 占 퐉.
11. The method of claim 10,
The first coil pattern forming opening and the second coil pattern forming opening may be formed of one selected from the group consisting of Ag, Pd, Al, Ni, Ti, Au, ) And platinum (Pt). ≪ / RTI >

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