KR101975316B1 - 원통형 이방적 열 전도성을 갖는 복합 장치 - Google Patents

원통형 이방적 열 전도성을 갖는 복합 장치 Download PDF

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Publication number
KR101975316B1
KR101975316B1 KR1020187013853A KR20187013853A KR101975316B1 KR 101975316 B1 KR101975316 B1 KR 101975316B1 KR 1020187013853 A KR1020187013853 A KR 1020187013853A KR 20187013853 A KR20187013853 A KR 20187013853A KR 101975316 B1 KR101975316 B1 KR 101975316B1
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South Korea
Prior art keywords
base support
thermally conductive
arcuate members
thermal conductivity
conductive arcuate
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English (en)
Korean (ko)
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KR20180071307A (ko
Inventor
산홍 장
케빈 프타시엔스키
케빈 알. 스미스
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와틀로 일렉트릭 매뉴팩츄어링 컴파니
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    • H01L21/67103—
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B1/00—Details of electric heating devices
    • H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
    • H05B1/0227—Applications
    • H05B1/023—Industrial applications
    • H05B1/0233—Industrial applications for semiconductors manufacturing
    • H01L21/67109—
    • H01L21/67115—
    • H01L21/67248—
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater non-flexible
    • H05B3/26—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
    • H05B3/267—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base the insulating base being an organic material, e.g. plastic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Resistance Heating (AREA)
  • Drying Of Semiconductors (AREA)
KR1020187013853A 2015-10-19 2016-10-12 원통형 이방적 열 전도성을 갖는 복합 장치 Active KR101975316B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/886,783 2015-10-19
US14/886,783 US10154542B2 (en) 2015-10-19 2015-10-19 Composite device with cylindrical anisotropic thermal conductivity
PCT/US2016/056547 WO2017069977A1 (en) 2015-10-19 2016-10-12 Composite device with cylindrical anisotropic thermal conductivity

Publications (2)

Publication Number Publication Date
KR20180071307A KR20180071307A (ko) 2018-06-27
KR101975316B1 true KR101975316B1 (ko) 2019-05-07

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020187013853A Active KR101975316B1 (ko) 2015-10-19 2016-10-12 원통형 이방적 열 전도성을 갖는 복합 장치

Country Status (7)

Country Link
US (1) US10154542B2 (https=)
EP (1) EP3365913B1 (https=)
JP (1) JP6538974B2 (https=)
KR (1) KR101975316B1 (https=)
CN (1) CN108701628B (https=)
TW (1) TWI654699B (https=)
WO (1) WO2017069977A1 (https=)

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CN112586090B (zh) * 2018-08-20 2024-06-04 康姆艾德公司 用于射频部件的多层冷却结构
US11515190B2 (en) 2019-08-27 2022-11-29 Watlow Electric Manufacturing Company Thermal diffuser for a semiconductor wafer holder
US12046502B2 (en) * 2019-09-09 2024-07-23 Watlow Electric Manufacturing Company Electrostatic puck and method of manufacture
KR102144079B1 (ko) * 2020-04-03 2020-08-13 (주)유진기업 Psc구조물에 긴장재를 삽입하는 방법 및 이를 이용하여 제작된 psc구조물
DE102020123546A1 (de) 2020-09-09 2022-03-10 Aixtron Se CVD-Reaktor mit einer Kühlfläche mit bereichsweise vergrößerter Emissivität
CN112382589A (zh) * 2020-11-10 2021-02-19 泉芯集成电路制造(济南)有限公司 一种去除芯片表面氧化硅的装置及方法
JP2023180522A (ja) * 2022-06-09 2023-12-21 新光電気工業株式会社 基板固定装置及び基板固定装置の製造方法
JP2023183628A (ja) * 2022-06-16 2023-12-28 新光電気工業株式会社 基板固定装置及び基板固定装置の製造方法
JP2024000905A (ja) * 2022-06-21 2024-01-09 新光電気工業株式会社 基板固定装置及び基板固定装置の製造方法
US20250125213A1 (en) * 2023-10-11 2025-04-17 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated Circuit with Anisotropic Thermal Dissipation Structure

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US20060076109A1 (en) 2004-10-07 2006-04-13 John Holland Method and apparatus for controlling temperature of a substrate
US20080066676A1 (en) 2006-09-19 2008-03-20 General Electric Company Heating apparatus with enhanced thermal uniformity and method for making thereof

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US6410172B1 (en) 1999-11-23 2002-06-25 Advanced Ceramics Corporation Articles coated with aluminum nitride by chemical vapor deposition
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KR20160015510A (ko) * 2014-07-30 2016-02-15 삼성전자주식회사 정전척 어셈블리, 이를 구비하는 반도체 제조장치, 및 이를 이용한 플라즈마 처리방법
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Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060076109A1 (en) 2004-10-07 2006-04-13 John Holland Method and apparatus for controlling temperature of a substrate
US20080066676A1 (en) 2006-09-19 2008-03-20 General Electric Company Heating apparatus with enhanced thermal uniformity and method for making thereof

Also Published As

Publication number Publication date
TWI654699B (zh) 2019-03-21
KR20180071307A (ko) 2018-06-27
WO2017069977A1 (en) 2017-04-27
US20170111958A1 (en) 2017-04-20
CN108701628A (zh) 2018-10-23
TW201719792A (zh) 2017-06-01
CN108701628B (zh) 2019-10-08
JP6538974B2 (ja) 2019-07-03
JP2018533216A (ja) 2018-11-08
US10154542B2 (en) 2018-12-11
EP3365913A1 (en) 2018-08-29
EP3365913B1 (en) 2021-06-16

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