KR101965102B1 - Film forming method, film forming apparatus and manufacturing method of electronic device - Google Patents

Abstract

The present invention provides a film forming apparatus, evaporating and depositing an evaporation material on a film forming surface of a rotating substrate, in which three or more evaporation sources arranged in a surface facing the film forming surface of the substrate are included, each of the three or more evaporation sources has a plurality of furnaces radially arranged around a rotary shaft and is rotatable around the rotary shaft, the three or more evaporation sources are arranged such that arbitrary three evaporation sources among the three or more evaporation sources have rotational centers to make a triangular shape within the surface, the plurality of furnaces of each of the three or more evaporation sources include: an evaporation furnace positioned at an evaporation position; and a preheating furnace positioned at a preheating position, and the evaporation furnace of each of the three or more evaporation sources is arranged at the same distance from the rotational center axis of the substrate in the surface. The present invention can effectively reduce influence on the substrate by a thermal radiation change.

Description

TECHNICAL FIELD [0001] The present invention relates to a film forming apparatus, a film forming method, and an electronic device manufacturing method,

The present invention relates to a film forming apparatus, a film forming method, and an electronic device manufacturing method.

Recently, an organic EL display device has been spotlighted as a flat panel display device. The organic EL display device is a self-luminous display, and its characteristics such as response speed, viewing angle, and thinness are superior to those of a liquid crystal panel display, and thus various types of portable terminals represented by monitors, televisions, and smart phones are rapidly replacing existing liquid crystal panel displays . In addition, automotive displays are expanding their applications.

The element of the organic EL display device has a basic structure in which an organic material layer causing light emission is formed between two opposing electrodes (cathode electrode, anode electrode). The organic material layer and the metal electrode layer of the organic EL display device are manufactured by heating an evaporation source containing an evaporation material in a vacuum chamber of a film forming apparatus to evaporate the evaporation material and form a film on the substrate through a mask having a pixel pattern.

Particularly, as shown in FIG. 7, the evaporation source 700 for forming the metal electrode layer on the substrate has a plurality of crucibles 710 to 770 disposed circumferentially, and a plurality of crucibles (710) rotates to the deposition position to evaporate the electrode material toward the substrate. This rotary type multi-point evaporation source is also referred to as a revolver.

On the other hand, as the size of the substrate to be formed becomes larger, it is required to arrange a plurality of evaporation sources in the film forming apparatus in order to increase the film forming speed and the like.

However, when a plurality of evaporation sources are arranged in this way, there is a possibility that the evaporation characteristics of the respective evaporation sources relative to the substrate may be different depending on the arrangement of the evaporation sources, and the evaporation source of such evaporation sources may be evaporated. A technology for effectively arranging a plurality of evaporation sources in consideration of a difference in characteristics and a space utilization efficiency in a film forming apparatus has not been proposed.

SUMMARY OF THE INVENTION In view of the above, it is an object of the present invention to provide a film forming apparatus in which a plurality of evaporation sources are effectively arranged so that the space utilization efficiency in the film forming apparatus can be enhanced and the size of the film forming apparatus can be suppressed, a film forming method using the film forming apparatus, It is intended to provide.

It is another object of the present invention to provide a film forming apparatus capable of reducing the influence of the substrate on the substrate in terms of the space utilization efficiency in the film forming apparatus and the fluctuation of the thermal radiation from each evaporation source, And a method of manufacturing an electronic device.

A film forming apparatus according to a first aspect of the present invention is a film forming apparatus for evaporating and depositing an evaporation material on a film formation surface of a rotating substrate, the apparatus comprising three or more evaporation sources arranged in a plane facing the film formation surface of the substrate, Wherein each of the three or more evaporation sources has a plurality of crucibles radially arranged around a rotation axis and is rotatable around the rotation axis as the center of rotation, and the three or more evaporation sources are any three of the three or more evaporation sources Wherein the plurality of crucibles of each of the three or more evaporation sources are disposed in a vapor deposition crucible located at a deposition position and a crucible for preheating located in a preheating position, Wherein the vapor-deposition crucible of each of the three or more evaporation sources is a crucible for heating the substrate, It characterized in that disposed at the same distance emitter.

A film forming apparatus according to a second aspect of the present invention is a film forming apparatus for evaporating and vaporizing an evaporation material on a film formation surface of a rotating substrate, the apparatus comprising a plurality of evaporation sources arranged in a plane facing the film formation surface of the substrate, Each of the plurality of evaporation sources has a plurality of crucibles radially arranged around a rotation axis and is rotatable about the rotation axis as a rotation center, and the plurality of evaporation sources include a plurality of first evaporation sources each having a plurality of first crucibles, And a second evaporation source having a number of second crucibles smaller than that of the first evaporation source, wherein the plurality of first evaporation sources are arranged such that each rotation center has a first center And the second evaporation source is disposed between the adjacent two first evaporation sources of the first evaporation source, and the rotation center thereof is disposed between the adjacent two evaporation sources And is arranged so as not to be on the same straight line as the line segment connecting the rotation centers of the first evaporation sources.

According to the present invention, it is possible to increase the space utilization efficiency in the film formation apparatus to suppress the size increase of the film formation apparatus, and to effectively reduce the influence of the substrate on the good film formation on the substrate and the fluctuation of heat radiation from each evaporation source.

1 is a schematic view of a part of an electronic device manufacturing apparatus.
2 is a schematic view of a film forming apparatus according to an embodiment of the present invention.
3 is a top view for explaining the arrangement relationship between a substrate and a plurality of evaporation sources in a deposition apparatus according to an embodiment of the present invention.
FIG. 4 is a cross-sectional view showing a relative placement relationship of the crucible for vaporization of each evaporation source and the crucible for preheating in the film forming apparatus according to an embodiment of the present invention. FIG.
5 is a top view for explaining the arrangement relationship between a substrate and a plurality of evaporation sources in a film forming apparatus according to another embodiment of the present invention.
6 is a schematic view of the organic EL device of the present invention.
7 is a schematic view of a rotary multi-point evaporation source (revolver).

Hereinafter, preferred embodiments and examples of the present invention will be described with reference to the drawings. However, the following embodiments and examples are merely illustrative of preferred configurations of the present invention, and the scope of the present invention is not limited to these configurations. In the following description, the hardware configuration, the software configuration, the process flow, the manufacturing conditions, the size, the material, the shape, and the like of the apparatus are intended to limit the scope of the present invention unless otherwise specified no.

<Electronic Device Manufacturing Line>

1 is a schematic diagram showing an example of an apparatus for manufacturing an electronic device.

The electronic device manufacturing apparatus of Fig. 1 is used, for example, in the manufacture of a display panel of an organic EL display device for a smart phone. In the case of a display panel for a smart phone, for example, a film for forming an organic EL element is formed on a substrate having a full size (about 1500 mm x about 1850 mm) or a half cut size (about 1500 mm x about 925 mm) , And the corresponding substrate is cut out to fabricate a plurality of small size panels.

The electronic device manufacturing apparatus generally includes a plurality of cluster apparatuses as shown in Fig. 1, and each cluster apparatus 1 includes a plurality of film forming chambers (not shown) in which processing (e.g., film formation) A plurality of mask stock chambers 12 for accommodating masks before and after use, and a transfer chamber 13 disposed at the center thereof.

A transfer robot 14 for transferring a substrate 10 between a plurality of film deposition chambers 11 and transferring a mask between the deposition chamber 11 and the mask stock chamber 12 is provided in the transfer chamber 13. [ The carrying robot 14 may be, for example, a robot having a structure in which a robot hand for holding a substrate 10 is mounted on a multi-joint arm.

Each deposition chamber 11 is provided with a deposition apparatus (also referred to as a deposition apparatus). In the film forming apparatus, the evaporation material stored in the evaporation source is heated and evaporated by the heater, and is deposited on the substrate through the mask. A series of films such as transfer and reception of the substrate 10 with the transfer robot 14, alignment of the relative positions of the substrate 10 and the mask, fixing of the substrate 10 onto the mask, The process is automatically performed by the film forming apparatus.

In the mask stock chamber 12, a new mask and a used mask to be used in the film forming process in the film forming chamber 11 are stored in two cassettes. The transfer robot 14 transfers the used mask from the film formation chamber 11 to the cassette of the mask stock chamber 12 and transfers a new mask stored in another cassette of the mask stock chamber 12 to the deposition chamber 11, .

The cluster device 1 is provided with a path chamber 15 for transferring the substrate 10 from the upstream side in the direction of flow of the substrate 10 to the cluster device 1, And a buffer chamber 16 for transferring the substrate 10 to another cluster device on the downstream side is connected. The transfer robot 14 of the transfer chamber 13 receives the substrate 10 from the pass space 15 on the upstream side and transfers the substrate 10 to one of the deposition chambers 11 (for example, the deposition chamber 11a) ). The transport robot 14 receives the substrate 10 on which the film forming process in the cluster apparatus 1 has been completed from one of the plurality of film forming chambers 11 (for example, the film forming chamber 11b) To the buffer chamber (16).

A vortex chamber 17 is provided between the buffer chamber 16 and the pass chamber 15 for changing the direction of the substrate. This makes the direction of the substrate in the upstream-side cluster device and the downstream-side cluster device the same, facilitating the substrate processing.

1, the configuration of the electronic device manufacturing apparatus has been described. However, the present invention is not limited to this, and the chambers may have different chambers or different chambers.

Hereinafter, the configuration of a film forming apparatus provided in the film forming chamber 11 will be described.

&Lt;

2 is a cross-sectional view schematically showing the configuration of a film forming apparatus, particularly, a film forming apparatus 2 for forming a metal evaporating material used for forming a metal electrode layer.

The film forming apparatus 2 has a vacuum chamber 20. The inside of the vacuum chamber 20 is maintained in a reduced pressure atmosphere such as a vacuum or an inert gas atmosphere such as nitrogen gas. A substrate holding unit 21 and a mask stand 22 are installed in the upper part of the vacuum chamber 20 and an evaporation source 23 is installed in the lower part of the vacuum chamber 20.

The substrate holding unit 21 is a means for holding, supporting, and conveying the substrate 10 received from the carrying robot 14 of the carrying chamber 13, which is also referred to as a substrate holder.

The frame-like mask base 22 is provided below the substrate holding unit 21, and the mask 222 is placed on the mask base 22. The mask 222 has an opening pattern corresponding to the thin film pattern to be formed on the substrate 10.

The substrate holding unit 21 is lowered relative to the mask table 22 (or the mask table 22 is raised toward the substrate holding unit 21) The substrate holding unit 21 and the mask stand (not shown) are moved by the rotating shaft 27 introduced from the top (outside) of the vacuum chamber 20 after the substrate 10 held by the holding mechanism 22 by rotating the mask 222 and the substrate 10 placed on the mask. This is to ensure that the metallic deposition material is deposited on the substrate in a uniform thickness.

Although not shown in FIG. 2, a plurality of driving mechanisms including an actuator for rotationally driving the rotary shaft 27 are provided outside (on the atmospheric side) of the upper surface of the vacuum chamber 20.

Further, a substrate shutter (not shown) may be provided under the mask table 22. The substrate shutter covers the substrate 10 in addition to the deposition of the substrate 10 to prevent evaporation material evaporated from the evaporation source 23 from being deposited on the substrate 10.

An evaporation source 23 including an evaporation source 231 containing a deposition material to be deposited on a substrate 10 and a heater (not shown) for heating the crucible, an evaporation source shutter 25, An evaporation rate sensor 26, and the like.

A plurality of evaporation sources 23 of the metallic evaporation material forming apparatus 2 are provided on the bottom surface of the vacuum chamber and each evaporation source 23 includes a plurality of crucibles 231. Each of the evaporation sources 23 is rotated by a rotation driving mechanism (not shown) to move the positions of the plurality of crucibles 231 in sequence, and from the crucibles moved to a predetermined deposition position in accordance with the positional shift of the crucibles, Are sequentially evaporated and deposited on the substrate 10 as a multi-point evaporation source (revolver).

The detailed structure of each evaporation source 23 and the arrangement of the plurality of evaporation sources 23 will be described later.

The deposition material evaporated from the crucible at the deposition position is temporarily blocked (for example, the preparation process before the start of film formation), as needed, so that the evaporation material evaporated from the crucible at the deposition position is shielded In order to control the opening, an evaporation source shutter 25 may be provided at an upper portion of the evaporation source 23. The evaporation source shutter 25 rotates and opens above the crucible at the deposition position so that evaporation material from the crucible at the deposition position is blown toward the substrate 10 and film formation on the substrate 10 is started.

The evaporation rate sensor 26 is a device for monitoring the rate at which the evaporation material evaporates from the crucible 231 of the evaporation source 23. Details of the arrangement position of the evaporation rate sensor 26 will be described later.

<Arrangement of evaporation source>

Referring to Fig. 3, the structure of a rotary multi-point evaporation source (revolver) and the arrangement of a plurality of evaporation sources according to the embodiment of the present invention will be described.

3 is a top view for explaining the arrangement relationship between the substrate 10 and the plurality of evaporation sources 23 in the film forming apparatus 2. Fig.

As described above, the substrate 10, which is driven by the rotating shaft 27 and rotates at the time of film formation, is disposed in the upper part of the vacuum chamber of the film forming apparatus 2. A plurality (three or more) of evaporation sources 23 are disposed in the lower portion of the vacuum chamber of the film forming apparatus 2 in a face opposing the substrate 10 and opposed to the film forming face of the substrate 10. In this example, four evaporation sources 23 are arranged in a rectangular shape corresponding to the corner portions of the film forming apparatus 2 when viewed from the top.

As described above, each evaporation source 23 is a rotary multi-point evaporation source (revolver) that sequentially moves the positions of the crucibles 231 by rotation during film formation to evaporate the evaporation material for each crucible, And a plurality of crucibles 231 radially arranged around the respective rotation shafts. On the other hand, each of the four evaporation sources 23 rotates (rotates) in opposite directions to each other so that the adjacent evaporation sources 23 sequentially move the crucibles to perform film formation. The rotational direction of each evaporation source 23 is not particularly limited to this.

The number of crucibles 231 provided in each evaporation source 23 is not particularly limited, and the number of crucibles of each evaporation source 23 may be the same or different. In this example, each of the evaporation sources 23 has seven crucibles 231.

One of the seven crucibles 232 in each evaporation source 23 is located at the evaporation position at the time of film formation. The deposition position refers to a position where the crucible positioned at the position evaporates and supplies the evaporation material toward the substrate. That is, each of the evaporation sources 23 is heated at a high temperature (for example, 1300 ° C) by a heater to heat the crucible 232 located at the deposition position at the time of film formation, The evaporation material contained in the evaporation material is evaporated and deposited on the substrate 10.

When the evaporation material in the crucible 232 at the evaporation position is exhausted, the evaporation source 23 is rotated to move the crucible 232 at the evaporation position to the evaporation position, and the crucible 233 at the preheating position is evaporated To the position 232.

The preheating position is a position to preheat the crucible to be moved to the next deposition position. Hereinafter, the crucible 233 located at the preheating position is also referred to as &quot; preheating crucible &quot;. Thus, by preliminarily heating the crucible 233 to be moved to the deposition position next time, it is possible to shorten the time required for heating the crucible after it is moved to the deposition position, thereby shortening the deposition time.

The deposition position and the preheating position are arranged so that the crucibles at the position are not influenced by heat interference with each other. In this example, one of the vaporizing crucible 232 and the crucible for preliminary heating 233 is disposed one over the other.

The evaporation source 23 is rotated while the evaporation material in all the crucibles 231 of each evaporation source 23 is exhausted. When all the evaporation materials are consumed, the operation of the deposition device 2 is stopped and the crucible 231, The deposition material is filled again.

Hereinafter, the structure in which a plurality of evaporation sources 23 are arranged in the film forming apparatus 2 will be described in detail.

As shown in Fig. 3, a plurality of (four in this example) evaporation sources 23 are arranged such that any three evaporation sources among them are not located on the same straight line. In other words, when a, b, and c are the distances between the rotational center axes of the arbitrarily selected three evaporation sources, they are arranged so as to have a relationship of a + b > c (i.e., form a triangular shape). More specifically, the plurality of evaporation sources 23 are arranged such that the rotational center of each evaporation source 23 is located on one concentric circle C1 centered on the rotational center axis O of the substrate 10 within the evaporation source disposition plane .

Thus, since no three evaporation sources are located on the straight line with respect to the plurality of evaporation sources 23 arranged in plural, it is possible to effectively arrange a plurality of evaporation sources in the film formation apparatus 2 without increasing the distance between the evaporation sources, 2 can be increased.

Further, under the arrangement of the plurality of evaporation sources 23, the evaporation donut crucible 232 of each evaporation source 23 is arranged inside the circle C1 connecting the rotation centers of the evaporation sources 23. More specifically, the evaporation donor crucible 232 of each evaporation source 23 is located inside the circle C1 connecting the rotation centers of the evaporation sources 23, The distances are arranged to be located on substantially the same concentric circle (C2).

As described above, in the plurality of evaporation sources 23, the angular wear crucible 232 actually supplying the evaporation material at the time of film formation is located within substantially the same distance as the substrate 10, .

The crucible for preliminary heating 233 of each evaporation source 23 is disposed outside the circle C1 connecting the rotation centers of the evaporation sources 23 under the arrangement of the plurality of evaporation sources 23 described above. That is, a plurality of crucibles 231 in each evaporation source 23 are arranged so that the crucible for vaporization 232 is located at a distance from the center of the substrate 10 and the crucible for preliminary heating 233 is located at a farther distance. As shown in Fig. Fig. 4 is a cross-sectional view schematically showing the arrangement relationship of the evaporation donor crucible 232 and the preheating crucible 233 relative to the substrate 10 in each evaporation source 23. More specifically, the preheating crucible 233 of each of the evaporation sources 23 is disposed so as to be located outside the rotation radius of the substrate 10. [ That is, the crucible for preliminary heating 233 of all the evaporation sources 23 is disposed at a position where it does not overlap with the substrate 10.

The crucible for preliminary heating 233 is not involved in the actual deposition at the time of film formation but is kept at a high temperature as required for preheating, so that heat radiated from the crucible may affect the substrate 10. [ When a plurality of evaporation sources 23 are disposed on the lower portion of the substrate 10, there is a difference in the degree of influence of the heat radiated from the crucible for preheating 233 of each evaporation source 23 on the substrate 10 Can be.

The crucible for preliminary heating 233 which is not involved in the actual deposition at the time of film formation is disposed outside the rotation radius of the substrate 10 in each evaporation source 23 in the embodiment of the present invention, The influence of the fluctuation of the heat radiation from the substrate 10 on the substrate 10 can be reduced.

As described above with reference to Fig. 2, the rate of the evaporation material evaporated from the evaporation source crucible 232 of each evaporation source 23 is monitored in the region between the film formation surface of the substrate 10 and the plurality of evaporation sources 23 The evaporation rate sensor 26 may be provided. The evaporation rate sensor 26 is provided at a position on the outer side of the circle C1 connecting the rotation center of the evaporation source 23 so as not to affect film formation on the substrate 10 at the time of film formation desirable.

As described above, according to the present embodiment, it is possible to increase the space utilization efficiency in the film formation apparatus and to suppress the size increase of the apparatus, and to reduce the influence of the substrate on the good film formation on the substrate and the fluctuation of heat radiation from each evaporation source have.

Fig. 5 shows a configuration of a rotary multi-point evaporation source (revolver) according to another embodiment of the present invention.

In this embodiment, in addition to the configuration of the above-described embodiment, a small-diameter evaporation source having a small number of crucibles is additionally disposed. Specifically, in the illustrated example, an evaporation source 24 of small diameter, in which five crucibles 241 are arranged radially around a rotation axis (rotation axis), is disposed between two adjacent large-diameter evaporation sources 23.

The evaporation source 23 having a larger diameter and the evaporation source 24 having a smaller diameter may be disposed together in the film forming apparatus 2 as necessary in order to control the kind of the evaporation material and evaporation amount.

The present embodiment proposes an evaporation source arrangement in which, as in the above-described embodiment, the space utilization efficiency in the film formation apparatus is increased, and the film formation and the thermal radiation from each evaporation source can be suppressed.

Specifically, a large-diameter evaporation source 23 (hereinafter referred to as a "first evaporation source") is disposed in the center of the four evaporation sources 23 in correspondence with the corner portions of the film forming apparatus 2, as in the above- Are arranged in a rectangular shape so that their centers are located on one concentric circle (C1) centered on the rotation center axis (O) of the substrate (10).

Further, in each of the first evaporation sources 23, the vapor-deposition crucible 232 is located inside the circle C1 connecting the rotation centers of the evaporation sources and also on the inside of the circle C1 connecting the center of rotation O of the substrate 10 Are arranged so that the distances are located on substantially the same circle C2. The crucible for preliminary heating 233 in each of the first evaporation sources 23 is located outside the circle C1 connecting the center of rotation of the evaporation source 23, As shown in Fig.

A small-diameter evaporation source 24 (hereinafter referred to as a "second evaporation source") is disposed between adjacent two first evaporation sources 23, specifically, between the rotation centers of the two first evaporation sources 23, So that it is not located on the same straight line as the line segment L connecting the line segment L. More specifically, the second evaporation source 24 is disposed such that the center of rotation of the second evaporation source 24 is located outside the line segment L, and further inside the circle C1 than the line segment L based on the rotation center axis O of the substrate 10.

As a result, it is possible to narrow the interval between the two adjacent first evaporation sources 23 between the second evaporation sources 24 and to set the second evaporation source 24, which is further disposed, The space utilization efficiency in the film forming apparatus 2 can be further increased.

The crucible for vapor deposition 242 and the crucible for preliminary heating 243 in the second evaporation source 24 can be arranged in the same manner as that of the first evaporation source 23.

That is, in the second evaporation source 24, the evaporation crucible 242 is disposed closer to the rotation center axis O of the substrate 10 than the crucible 243 for preliminary heating. Concretely, the evaporation crucible 242 is disposed inside the rotation center of the second evaporation source 24, and the crucible 247 for preheating is disposed outside the rotation center of the second evaporation source 24.

Further, in order to position the second evaporation source 24 as far as possible inside the film forming apparatus 2, the arrangement conditions of the evaporation donor crucible 242 and the preheating crucible 243 of the second evaporation source 24, In consideration of the arrangement relationship with the adjacent first evaporation sources 23, the following arrangements are made.

That is, the second evaporation source 24 is disposed in such a manner that the vapor deposition crucible 242 is positioned at the same distance as the evaporation crucible 232 of the first evaporation source 23 from the rotation center axis O of the substrate 10 The crucible for preliminary heating 243 is still rotated in the same manner as the preliminary heating crucible 233 of the first evaporation source 23, It is preferable to arrange it so as to be located outside the radius.

As a result, it is possible to reduce the influence on the substrate 10 due to the good film deposition and the fluctuation of the heat radiation from the evaporation source (especially, the crucible for preliminary heating) while enhancing the space utilization efficiency in the film formation apparatus.

&Lt; Method of manufacturing electronic device &

Next, an example of a method of manufacturing an electronic device using the film forming apparatus of the present embodiment will be described. Hereinafter, the configuration and manufacturing method of the organic EL display device will be exemplified as an example of the electronic device.

First, an organic EL display device to be manufactured will be described. Fig. 6 (a) is an overall view of the organic EL display device 50, and Fig. 6 (b) shows a cross-sectional structure of one pixel.

As shown in Fig. 6 (a), a plurality of pixels 52 having a plurality of light emitting elements are arranged in a matrix form in a display area 51 of the organic EL display device 50. Fig. Each of the light emitting devices has a structure including an organic layer sandwiched between a pair of electrodes. The term &quot; pixel &quot; as used herein refers to a minimum unit capable of displaying a desired color in the display region 51. [ In the organic EL display device 50 according to the present embodiment, by the combination of the first light emitting element 52R, the second light emitting element 52G, and the third light emitting element 52B which exhibit different light emission, ). The pixel 52 is often constituted by a combination of a red light emitting element, a green light emitting element and a blue light emitting element, but may be a combination of a yellow light emitting element, a cyan light emitting element and a white light emitting element. no.

Fig. 6 (b) is a partial sectional schematic view taken along the line A-B in Fig. 6 (a). The pixel 52 includes a first electrode (anode) 54, a hole transporting layer 55, light emitting layers 56R, 56G and 56B, an electron transporting layer 57, a second electrode (cathode) 58 The organic EL device according to claim 1, Of these, the hole transporting layer 55, the light emitting layers 56R, 56G, and 56B, and the electron transporting layer 57 correspond to organic layers. In the present embodiment, the light emitting layer 56R is an organic EL layer emitting red, the light emitting layer 56G is an organic EL layer emitting green, and the light emitting layer 56B is an organic EL layer emitting blue. The light emitting layers 56R, 56G, and 56B are formed in patterns corresponding to light emitting elements (sometimes referred to as organic EL elements) emitting red, green, and blue, respectively. In addition, the first electrode 54 is formed separately for each light emitting device. The hole transport layer 55, the electron transport layer 57 and the second electrode 58 may be formed in common with the plurality of light emitting devices 52R, 52G, and 52B, or may be formed separately for each light emitting device. An insulating layer 59 is provided between the first electrodes 54 to prevent the first electrode 54 and the second electrode 58 from being short-circuited by foreign matter. Further, since the organic EL layer is deteriorated by moisture or oxygen, a protective layer 60 for protecting the organic EL element from moisture or oxygen is provided.

In order to form the organic EL layer by a light-emitting element unit, a method of forming a film through a mask is used. In recent years, a high-definition display device has been developed, and a mask having a width of several tens of micrometers is used for forming the organic EL layer.

Next, an example of a manufacturing method of the organic EL display device will be described in detail.

First, a circuit (not shown) for driving the organic EL display device and a substrate 53 on which the first electrode 54 is formed are prepared.

An acrylic resin is formed on the substrate 53 on which the first electrode 54 is formed by spin coating and an acrylic resin is patterned by an lithography method so as to form an opening in a portion where the first electrode 54 is formed, . This opening corresponds to a light emitting region where the light emitting element actually emits light.

The substrate 53 on which the insulating layer 59 is patterned is brought into the first organic material film forming apparatus to hold the substrate by the substrate holding unit and the electrostatic chuck and the hole transport layer 55 is transported to the first electrode 54 As a common layer. The hole transporting layer 55 is formed by vacuum evaporation. In practice, since the hole transport layer 55 is formed in a size larger than that of the display region 51, a high-precision mask is not required.

Next, the substrate 53 formed up to the hole transporting layer 55 is carried into the second film forming apparatus and held by the substrate holding unit. Alignment of the substrate and the mask is performed and the substrate is placed on the mask to form the light emitting layer 56R that emits red light at the portion where the red emitting element of the substrate 53 is disposed.

The light emitting layer 56G that emits green light is formed by the third film forming apparatus and the light emitting layer 56B that emits blue light by the fourth film forming apparatus is formed in the same manner as the film forming of the light emitting layer 56R. After the formation of the light-emitting layers 56R, 56G, and 56B is completed, the electron-transporting layer 57 is formed over the entire display region 51 by the fifth film formation apparatus. The electron-transporting layer 57 is formed as a common layer to the light-emitting layers 56R, 56G, and 56B of the three colors.

The substrate formed up to the electron transporting layer 57 is moved to the sixth film forming apparatus to form the second electrode 58 to complete the organic EL display device 50. [

When the substrate 53 having the insulating layer 59 is exposed to an atmosphere containing moisture or oxygen from the time when the substrate 53 with the patterned layer 59 is transferred to the film forming apparatus to the completion of the formation of the protective layer 60, There is a possibility of deterioration due to moisture or oxygen. Therefore, in this example, the carrying-in and carrying-out of the substrate between the film forming apparatuses is performed in a vacuum atmosphere or an inert gas atmosphere.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. Can be deformed. For example, the number of evaporation sources arranged in the film forming apparatus, the number of crucibles provided in each evaporation source (evaporation source of large diameter and / or evaporation source of small diameter), and the like can be appropriately changed according to the design. For example, in another embodiment described above in which the large-diameter evaporation source 23 and the small-diameter evaporation source 24 are disposed together, as shown by the broken line in FIG. 5, A second evaporation source of small diameter may be further arranged. In the above-described embodiment, the crucible for vapor deposition of each evaporation source is described as being disposed on the circle C2 having the same distance from the center of the substrate. However, the same here is not only mathematically the same in the strict sense, And the like, depending on the design conditions.

1: Cluster device
2: Deposition device
11: The deposition room
20: Vacuum chamber
21: substrate holding unit
22: Mask band
23: First evaporation source (large diameter)
24: Second evaporation source (small diameter)
25: evaporation source shutter
26: Evaporation rate sensor
231, 241: Crucible
232, 242: vapor deposition crucible (deposition position)
233, 243: crucible for preheating (preheating position)
50: organic EL display device

Claims (26)

A film forming apparatus for evaporating and vapor-depositing an evaporation material on a film formation surface of a rotating substrate,
And three or more evaporation sources disposed in a plane facing the film formation surface of the substrate,
Wherein each of the three or more evaporation sources has a plurality of crucibles radially arranged around a rotation axis and rotatable about the rotation axis as a rotation center,
Wherein the three or more evaporation sources are arranged so that each rotation center of any of the three evaporation sources of the three or more evaporation sources forms a triangular shape in the plane,
Wherein the plurality of crucibles of each of the three or more evaporation sources includes a crucible for crucibles positioned at a deposition position and a crucible for preliminary heating located at a preliminary heating position,
Wherein the evaporation crucible of each of the three or more evaporation sources is disposed at the same distance from the rotation center axis of the substrate in the plane,
Wherein the rotation centers of the three or more evaporation sources are disposed on the same circle centered on the rotation center axis of the substrate in the plane,
Wherein the evaporation crucible of each of the three or more evaporation sources is disposed inside the circle,
Wherein the crucible for preliminary heating of each of the three or more evaporation sources is disposed outside the circle.
delete delete delete The method according to claim 1,
Wherein the crucible for preliminary heating of each of the three or more evaporation sources is disposed outside the rotation radius of the substrate.
6. The method according to claim 1 or 5,
Wherein the deposition position is a position where a crucible positioned at a corresponding position supplies an evaporation material toward the substrate,
Wherein the preheating position is a position where the crucible positioned at the preheating position is preheated before the crucible is moved to the deposition position by rotation of the evaporation source.
A film forming apparatus for evaporating and vapor-depositing an evaporation material on a film formation surface of a rotating substrate,
And a plurality of evaporation sources disposed in a plane facing the film formation surface of the substrate,
Wherein each of the plurality of evaporation sources has a plurality of crucibles radially arranged around a rotation axis and rotatable about the rotation axis as a rotation center,
Wherein the plurality of evaporation sources include a plurality of first evaporation sources each having a plurality of first crucibles and a second evaporation source having a second crucible smaller in number than the first evaporation sources,
Wherein the plurality of first evaporation sources are arranged such that each rotation center is on a first circle centered on the rotation center axis of the substrate in the plane,
The second evaporation source is disposed between two adjacent first evaporation sources of the first evaporation source and is arranged so that its rotation center is not located on the same straight line as a line segment connecting rotation centers of the adjacent two first evaporation sources Wherein the film forming device is disposed on the substrate.
8. The method of claim 7,
Wherein the second evaporation source is an evaporation source having a diameter smaller than that of each of the first evaporation sources.
8. The method of claim 7,
Wherein the rotation center of the second evaporation source is disposed outside the line connecting the rotation centers of the adjacent two first evaporation sources with respect to the rotation center axis of the substrate and inside the first circle, Device.
10. The method of claim 9,
Wherein the first crucible of each of the first evaporation sources and the second crucible of the second evaporation source each include a crucible for crucible placed at a deposition position and a crucible for preheating located at a preheated position,
Wherein each of the evaporation crucibles in each of the first evaporation source and the second evaporation source is disposed closer to the rotation center axis of the substrate than the crucible for each preliminary heating.
11. The method of claim 10,
Wherein each of the vapor deposition crucibles of each of the first evaporation sources is disposed inside the first circle.
11. The method of claim 10,
Wherein the crucible for preliminary heating of each of the first evaporation sources is disposed outside the first circle.
11. The method of claim 10,
Wherein the evaporation crucible of the second evaporation source is disposed inside the rotation center of the second evaporation source with respect to the rotation center axis of the substrate.
11. The method of claim 10,
Wherein the crucible for preliminary heating of the second evaporation source is disposed outside the center of rotation of the second evaporation source with respect to the rotation center axis of the substrate.
15. The method according to any one of claims 10 to 14,
Wherein the vapor-deposition crucible of each of the first evaporation sources and the vapor-deposition crucible of the second evaporation source are arranged at the same distance from the rotation center axis of the substrate.
15. The method according to any one of claims 10 to 14,
Wherein the vapor-deposition crucible of each of the first evaporation sources and the vapor-deposition crucible of the second evaporation source are arranged outside the rotation radius of the substrate.
15. The method according to any one of claims 10 to 14,
Wherein the crucible for preliminary heating of each of the first evaporation sources and the crucible for preliminary heating of the second evaporation source are disposed outside the rotation radius of the substrate.
15. The method according to any one of claims 10 to 14,
Wherein the deposition position is a position where a crucible positioned at a corresponding position supplies an evaporation material toward the substrate,
Wherein the preheating position is a position where the crucible positioned at the position is preheated before the crucible is moved to the deposition position by the rotation of each of the evaporation sources.
15. The method according to any one of claims 7 to 14,
Wherein the film forming apparatus is a polygonal film forming apparatus having a plurality of corner portions and each of the plurality of first evaporation sources is provided with first evaporation sources corresponding to the corner portions of the polygonal film forming apparatus when viewed from the upper surface .
20. The method of claim 19,
Wherein the film forming apparatus is a film forming apparatus having four corner portions and the four first evaporation sources are arranged in a rectangular shape corresponding to the corner portions of the film forming apparatus when viewed from the top surface .
21. The method of claim 20,
Wherein the first evaporation sources of the plurality of first evaporation sources are arranged in a rectangular shape corresponding to the corner portions of the film forming apparatus when seen from the top surface.
22. The method of claim 21,
Wherein the second evaporation source is disposed between two adjacent first evaporation sources corresponding to a long side of the four first evaporation sources arranged in the rectangular shape when viewed from the top surface.
21. The method of claim 20,
Wherein the four first evaporation sources rotate so that the adjacent first evaporation sources rotate in opposite directions to each other.
15. The method according to any one of claims 7 to 14,
Further comprising an evaporation rate sensor provided outside the first circle in an area between a film formation surface of the substrate and the surface on which the plurality of evaporation sources are disposed.
14. A film forming method for forming an electrode layer of an organic EL display device using the film forming apparatus of any one of claims 1, 5, and 14 to 14.
26. A method of manufacturing an organic EL display device using the film forming method of claim 25.

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