KR101960379B1 - Thin film transistor substrate and method of fabricating the same - Google Patents

Abstract

The present invention relates to a thin film transistor substrate and a method of manufacturing the same, which can simplify a process and reduce manufacturing cost, and a thin film transistor substrate of the present invention includes a substrate; A gate line and a gate electrode formed on the substrate; A gate insulating film formed on the entire surface of the substrate including the gate electrode; A thin film transistor formed at a crossing region of the gate line and the data line and a data line crossing the gate line and defining a pixel region with the gate insulating film interposed therebetween; A pixel electrode formed on the gate insulating layer and directly connected to the thin film transistor, and a transparent conductive pattern formed to cover the entire surface of the data line with the same material as the pixel electrode; A photosensitive organic pattern formed to completely cover the transparent conductive pattern; A protective film formed on the entire surface of the substrate including the photosensitive organic material pattern; And a plurality of slit-shaped common electrodes overlapping the pixel electrodes with the protective film interposed therebetween.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a thin film transistor substrate,

The present invention relates to a thin film transistor substrate, and more particularly, to a thin film transistor substrate and a method of manufacturing the same, which can reduce manufacturing costs by simplifying the process.

(PDP), Electro Luminescent Display (ELD), Vacuum Fluorescent (VFD), and the like have been developed in recent years in response to the demand for display devices. Display) have been studied, and some of them have already been used as display devices in various devices.

Among them, liquid crystal display devices are mostly used in place of CRT (Cathode Ray Tube) for the purpose of portable image display devices because of their excellent image quality, light weight, thinness and low power consumption, But also various kinds of monitors such as a television and a computer monitor receiving and displaying a broadcast signal in addition to the use of the same mobile type.

Such a liquid crystal display device displays an image by adjusting the light transmittance of a liquid crystal having dielectric anisotropy using an electric field. The liquid crystal display device includes a color filter substrate on which a color filter is formed, a thin film transistor substrate on which a thin film transistor is formed, And a liquid crystal layer formed on the substrate.

The color filter substrate is formed with R, G, and B color filters for color implementation, a black matrix for preventing light leakage, and a column spacer for maintaining a cell gap between the thin film transistor substrate and the color filter substrate. A plurality of pixel electrodes, to which pixel signals are individually supplied, are formed in a matrix form on the thin film transistor substrate. In the thin film transistor substrate, a thin film transistor for driving a plurality of pixel electrodes individually, a gate line for controlling the thin film transistor, and a data line for supplying a pixel signal to the thin film transistor are formed.

A typical driving mode most commonly used in a liquid crystal display device is a TN (Twisted Nematic) mode in which a liquid crystal director is arranged so as to be twisted by 90 ° and then a voltage is applied to control the liquid crystal director, An in-plane switching mode in which liquid crystal is driven by a horizontal electric field between an electrode and a common electrode, and the like. In the transverse electric field mode, the pixel electrode and the common electrode are alternately formed in the opening of the thin film transistor substrate so that the liquid crystal is aligned by the transverse electric field generated between the pixel electrode and the common electrode.

However, since the transverse electric field mode liquid crystal display device has a wide viewing angle but low aperture ratio and transmittance, a fringe field switching (FFS) mode liquid crystal display device has been proposed in order to solve the above problems. A fringe field-effect mode liquid crystal display device has a structure in which a common electrode in the form of a tubular electrode is formed in a pixel region and a plurality of pixel electrodes are formed in a slit shape on a common electrode, The liquid crystal molecules are operated by a fringe electric field formed between the pixel electrode and the common electrode.

Hereinafter, a method of manufacturing a general fringe field-mode liquid crystal display device will be described with reference to the accompanying drawings.

1 is a cross-sectional view of a general fringe field mode thin film transistor substrate.

1, a method of manufacturing a general fringe field-mode thin film transistor substrate includes forming a gate line (not shown), a gate electrode 10a, a gate pad lower electrode 10b, and a gate line A step of forming a common line (not shown), a step of forming a semiconductor layer 13 in which an active layer 13a and an ohmic contact layer 13b are sequentially stacked by using a second mask, Drain electrodes 14a and 14b, a data line DL and a data pad lower electrode 14c are formed on the substrate 10 and the source and drain electrodes 14a and 14b, the data line DL and the data pad lower electrode 14c, And forming first and second protective films 15a and 15b in order on the entire surface of the substrate 10 so as to cover the first and second protective films 15a and 15b.

A pixel contact hole for selectively exposing the first and second protective films 15a and 15b using the fourth mask to expose the drain electrode 14b, a gate contact hole exposing the gate pad lower electrode 10b, Forming a data contact hole exposing the data pad lower electrode 14c; forming a pixel electrode 16 connected to the drain electrode 14b through the pixel contact hole on the second protective film 15b using the fifth mask; Forming a third protective film 15c exposing the gate pad lower electrode 10b corresponding to the gate contact hole and the data pad lower electrode 14c corresponding to the data contact hole using the sixth mask A common electrode 18a for generating a fringe electric field with the pixel electrode 16 and the gate pad upper electrode 10b connected to the gate pad lower electrode 10b with the third protective film 15c interposed therebetween, 18b) and de And a step of forming the emitter pad lower electrode (14c) and connected to the data pad upper electrode (18c).

Although not shown, a typical liquid crystal display device is formed using a total of 12 masks, including the step of fabricating a color filter substrate including R, G, and B color filters, a black matrix, and a column spacer. Therefore, the process is complicated and the manufacturing cost is increased.

It is an object of the present invention to provide a thin film transistor substrate using a total of five masks and a manufacturing method thereof.

According to an aspect of the present invention, there is provided a thin film transistor substrate comprising: a substrate; A gate line and a gate electrode formed on the substrate; A gate insulating film formed on the entire surface of the substrate including the gate electrode; A thin film transistor formed at a crossing region of the gate line and the data line and a data line crossing the gate line and defining a pixel region with the gate insulating film interposed therebetween; A pixel electrode formed on the gate insulating layer and directly connected to the thin film transistor, and a transparent conductive pattern formed to cover the entire surface of the data line with the same material as the pixel electrode; A photosensitive organic pattern formed to completely cover the transparent conductive pattern; A protective film formed on the entire surface of the substrate including the photosensitive organic material pattern; And a plurality of slit-shaped common electrodes overlapping the pixel electrodes with the protective film interposed therebetween.

The photosensitive organic material pattern is formed of a photoresist (PR) or a photoactive compound (PAC).

The common electrode is also formed on the protective film overlapping the data line.

A gate pad lower electrode formed at one end of the gate line; A data pad lower electrode formed at one end of the data line; A gate contact hole and a data contact hole for selectively removing the gate insulating film and the protective film to expose the gate pad lower electrode and the data pad lower electrode, respectively; And a gate pad upper electrode and a data pad upper electrode connected to the gate pad lower electrode and the data pad lower electrode through the gate contact hole and the data contact hole, respectively.

According to another aspect of the present invention, there is provided a method of manufacturing a thin film transistor substrate, including: forming a gate line and a gate electrode on a substrate; Forming a gate insulating film on the entire surface of the substrate including the gate electrode, forming a data line crossing the gate line with the gate insulating film interposed therebetween, and a thin film transistor in an intersecting region between the gate line and the data line; Forming a pixel electrode directly connected to the thin film transistor on the gate insulating film and forming a transparent conductive pattern on the entire surface of the data line; Forming a photosensitive organic pattern to completely cover the transparent conductive pattern; Forming a protective film on the entire surface of the substrate including the photosensitive organic material pattern; And forming a plurality of slit-shaped common electrodes overlapping the pixel electrodes with the protective film interposed therebetween.

Wherein the forming of the photosensitive organic material pattern comprises: depositing a transparent conductive material layer on the entire surface of the substrate including the thin film transistor and the data line, and applying a photosensitive organic material on the transparent conductive material layer; Exposing and developing the photosensitive organic material to form a first photosensitive organic material pattern; Patterning the transparent conductive material layer using the first photosensitive organic material pattern as a mask to form a transparent conductive pattern on a pixel electrode directly connected to the thin film transistor and on the entire surface of the data line; Forming a second photosensitive organic pattern remaining on the transparent conductive pattern by ashing the first photosensitive organic pattern; And curing the second photosensitive organic pattern to form a photosensitive organic pattern that completely covers the transparent conductive pattern.

The curing process is carried out at 200 ° C to 250 ° C for 20 minutes to 40 minutes.

The forming of the common electrode may include forming the common electrode on the protective film overlapping the data line.

Forming a gate pad lower electrode at one end of the gate line; Forming a data pad lower electrode at one end of the data line; Forming a gate contact hole and a data contact hole for selectively exposing the gate pad lower electrode and the data pad lower electrode, respectively, by selectively removing the gate insulating film and the protection film; And forming a gate pad upper electrode and a data pad upper electrode to be connected to the gate pad lower electrode and the data pad lower electrode through the gate contact hole and the data contact hole, respectively.

The thin film transistor substrate of the present invention and its manufacturing method as described above have the following effects.

First, a thin film transistor substrate is formed by a total of 5 mask processes, thereby simplifying the process and reducing manufacturing cost.

Second, a pixel electrode is formed in the opening region by using the third mask, and a transparent conductive pattern is formed on the data line, so that the broken line portion can be repaired through the transparent conductive pattern even if a disconnected portion occurs in the data line . In particular, the transparent conductive pattern shields the pixel signals of the data lines, thereby preventing the pixel signals from affecting adjacent pixel regions.

Third, the aperture ratio of the display device can be improved by directly connecting the drain electrode and the pixel electrode without a contact hole.

1 is a cross-sectional view of a general fringe field mode thin film transistor substrate.
2 is a sectional view of a thin film transistor substrate of the present invention.
3A to 3H are process sectional views of a thin film transistor substrate of the present invention.

Hereinafter, the thin film transistor substrate of the present invention will be described.

2 is a cross-sectional view of the thin film transistor substrate of the present invention.

2, the thin film transistor substrate of the present invention includes a substrate 100, a gate line (not shown) and a data line DL, which define a pixel region and intersect with each other with a gate insulating film 120 interposed therebetween, A pixel electrode 160a in the form of a tubular electrode directly connected to the thin film transistor, a transparent conductive pattern 160b formed to cover the entire surface of the data line DL, A photosensitive organic pattern 200c formed to completely cover the transparent conductive pattern 160b and a passivation layer 150 formed on the entire surface of the substrate 100 including the photosensitive organic pattern 200c and a passivation layer 150, And a common electrode 180a in the form of a slit overlapped with the common electrode 160a.

In particular, a gate pad and a data pad are formed at one end of a gate line (not shown) and a data line DL, respectively, and a gate pad GP applies a scan signal from a gate driver (not shown) And the data pad DP supplies a pixel signal from the data driver (not shown) to the data line DL.

The gate pad GP includes a gate pad lower electrode 100b formed on one end of a gate line (not shown) and a gate contact hole (not shown) passing through the gate insulating layer 120 and the passivation layer 150. [ And a gate pad upper electrode 180b connected to the lower electrode 100b. The data pad DP is connected to the data pad lower electrode 140c through a data pad lower electrode 140c connected to the data line DL and a data contact hole (not shown) And a data pad upper electrode 180c.

A thin film transistor formed in a crossing region of a gate line (not shown) and a data line DL has a structure in which a pixel signal supplied to the data line DL in response to a scan signal supplied to a gate line (not shown) So that it is kept charged. To this end, the thin film transistor includes a gate electrode 100a, a source electrode 140a, a drain electrode 140b, and a semiconductor layer 130.

The gate electrode 100a is protruded from a gate line (not shown) to supply a scan signal of a gate line (not shown) or defined as a partial region of a gate line (not shown) (Not shown) is formed of a layer of opaque conductive material.

In this case, the opaque conductive material layer may be formed of a material selected from Al / Cr, Al / Mo, Al (Nd) Al alloy, Al alloy, Mo alloy, Mo alloy, Al alloy, Mo alloy, Mo alloy, Mo alloy, Mo alloy, Layer structure such as a Mo alloy, Mo alloy / Al alloy, Mo / Al alloy, or the like, or a single layer structure of Mo, Ti, Cu, AlNd, Al, Cr, Mo alloy, Cu alloy, do.

The semiconductor layer 130 has a structure in which an active layer 130a formed by patterning an amorphous silicon layer and an ohmic contact layer 130b formed by patterning an impurity amorphous silicon layer are sequentially stacked. The semiconductor layer 130 may overlap the gate electrode 100a with a gate insulating layer 120 formed of an inorganic insulating material such as silicon oxide (SiOx) or silicon nitride (SiNx) interposed therebetween. The ohmic contact layer 130b Serves to reduce electrical contact resistance between the source and drain electrodes 140a and 140b and the active layer 130a. Particularly, a part of the ohmic contact layer 130b is removed to expose the active layer 130a to form a channel.

The data line DL includes an amorphous silicon layer, a doped amorphous silicon layer, and a layer of opaque conductive material which are sequentially stacked, and crosses a gate line (not shown) with the gate insulating film 120 therebetween. The source electrode 140a is connected to the data line DL to receive the pixel signal of the data line DL and the drain electrode 140b is formed to be spaced apart from the source electrode 140a, And supplies the pixel signal from the data line DL to the pixel electrode 160a.

The pixel electrode 160a is formed on the gate insulating layer 120 and is directly connected to the drain electrode 140b without a contact hole. In particular, the transparent conductive pattern 160b is formed of the same material as the pixel electrode 160a on the same layer as the pixel electrode 160a, that is, on the data line DL. At this time, the pixel electrode 160a and the transparent conductive pattern 160b may be formed of a conductive material such as tin oxide (TO), indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc (Indium Tin Zinc Oxide: ITZO) or the like.

In particular, the transparent conductive pattern 160b is formed so as to cover the entire surface of the data line DL, thereby shielding the pixel signal of the data line DL. Therefore, it is possible to prevent the pixel signal of the data line DL from affecting the adjacent pixel region. In addition, since the transparent conductive pattern 160b is formed so as to cover the entire surface of the data line DL even if a disconnected portion occurs in the amorphous silicon layer, the impurity amorphous silicon layer, and the opaque conductive material layer of the data line DL, Can be repaired.

A photosensitive organic material pattern 200c is formed on the transparent conductive pattern 160b. In particular, the photosensitive organic pattern 200c is formed of a photoresist (PR) or a photoactive compound (PAC) for forming the pixel electrode 160a and the transparent conductive pattern 160b.

More specifically, a transparent conductive material is formed on the entire surface of the substrate 100 including the data line DL, and a photoresist or a photoactive compound is formed on the transparent conductive material to form the pixel electrode 160a and the transparent conductive pattern 160b. After formation, the photoresist or photoactive compound is left without being removed. In particular, the photosensitive organic pattern 200c corresponding to the pixel electrode 160a is removed and remains only on the transparent conductive pattern 160c.

At this time, the photosensitive organic material pattern 200c flows to the gate insulating film 120 so as to cover not only the upper portion of the transparent conductive pattern 160b but also the side surface of the transparent conductive pattern 160b to form the transparent conductive pattern 160b The step between the photosensitive organic material pattern 200c and the gate insulating film 120 is lowered. Accordingly, the protective layer 150 formed on the entire surface of the substrate 100 including the photosensitive organic pattern 200c can be prevented from being broken at the stepped portion of the photosensitive organic pattern 200c.

A plurality of slit-shaped common electrodes 180a are formed on the protective layer 150 so that the pixel electrodes 160a and the common electrodes 180a form a fringe electric field with the protective layer 150 therebetween. The liquid crystal molecules rotate due to the dielectric anisotropy by the fringing electric field, and the light transmittance transmitted through the pixel region changes according to the degree of rotation of the liquid crystal molecules, thereby realizing an image.

In particular, since the protective layer 150 is formed of an inorganic insulating material such as silicon oxide (SiOx), silicon nitride (SiNx), or the like, the protective layer 150 is formed to be thinner than a general organic protective layer. As described above, since the step between the photosensitive organic material pattern 200c and the gate insulating film 120 is reduced and the protective film 150 can be formed to have a thinner thickness, the driving voltage can be lowered and the power consumption can be reduced.

The gate pad upper electrode 180b and the data pad upper electrode 180c formed of the same material as the common electrode 180a are electrically connected to the gate pad lower electrode 180a through a gate contact hole (not shown) and a data contact hole The data pad 100b and the data pad lower electrode 140c to form a gate pad and a data pad.

At this time, the common electrode 180a, the gate pad upper electrode 180b, and the data pad upper electrode 180c are formed of tin oxide (TO), indium tin oxide (ITO), indium zinc oxide Zinc Oxide (IZO), Indium Tin Zinc Oxide (ITZO), or the like.

In particular, although the data pad lower electrode 140c is formed on the same layer as the data line DL in the drawing, the data pad lower electrode 140c may be formed on the same layer as the gate line (not shown) A link portion for electrically connecting the data pad lower electrode 140c and the data line DL may be further formed.

The thin film transistor substrate according to the present invention as described above forms the pixel electrode 160a and the transparent conductive pattern 160b is formed on the data line DL so that the transparent conductive pattern 160b is transparent The broken line portion can be repaired through the conductive pattern 160b. In particular, the transparent conductive pattern 160b shields the pixel signal of the data line DL to prevent the pixel signal from affecting the adjacent pixel region. In addition, the drain electrode 140b and the pixel electrode 160a are directly connected to each other without a contact hole, whereby the aperture ratio of the display device can be improved.

Hereinafter, a method for fabricating a thin film transistor substrate according to the present invention will be described in detail.

3A to 3H are process sectional views of a thin film transistor substrate of the present invention.

As shown in FIG. 3A, a gate electrode 100a and a gate line (not shown) are formed on a substrate 100, and a gate pad lower electrode 110b is formed at one end of a gate line (not shown). Specifically, an opaque conductive material layer is formed on the substrate 100 by a deposition method such as a sputtering method. Then, the opaque conductive material layer is patterned using the first mask to form a gate electrode 100a, a gate line (not shown), and a gate pad lower electrode 110b.

In this case, the opaque conductive material layer may be formed of a material selected from Al / Cr, Al / Mo, Al (Nd) Al alloy, Al alloy, Mo alloy, Mo alloy, Al alloy, Mo alloy, Mo alloy, Mo alloy, Mo alloy, Layer structure such as a Mo alloy, Mo alloy / Al alloy, Mo / Al alloy, or the like, or a single layer structure of Mo, Ti, Cu, AlNd, Al, Cr, Mo alloy, Cu alloy, .

3B, an inorganic insulating material such as silicon oxide (SiOx), silicon nitride (SiNx), or the like is formed on the entire surface of the substrate 100 including the gate electrode 100a, the gate line (not shown) and the gate pad lower electrode 110b. A gate insulating film 120 is formed. Then, an amorphous silicon layer, an impurity amorphous silicon layer, and a layer of an opaque conductive material are sequentially formed on the gate insulating layer 120 corresponding to the gate electrode 100a.

Then, the amorphous silicon layer, the impurity amorphous silicon layer and the opaque conductive material layer are patterned using the second mask to form the semiconductor layer 130, the source and drain electrodes 140a and 140b, the data line DL, (140c).

The semiconductor layer 130 has a structure in which an active layer 130a and an ohmic contact layer 130b respectively formed by patterning an amorphous silicon layer and an impurity amorphous silicon layer are sequentially stacked. The data line DL intersects the gate line (not shown) with the gate insulating layer 120 therebetween to define a pixel region, and includes a stacked amorphous silicon layer, a doped amorphous silicon layer, and a layer of opaque conductive material do.

The source and drain electrodes 140a and 140b are formed in a region corresponding to the semiconductor layer 130 by patterning the opaque conductive material layer and the source electrode 140a is connected to the data line DL to receive a pixel signal . Then, the ohmic contact layer 130b corresponding to the spaced apart region of the source and drain electrodes 140a and 140b is removed to form a channel. The data pad lower electrode 140c is formed at one end of the data line DL and includes an amorphous silicon layer, an impurity amorphous silicon layer, and a layer of opaque conductive material sequentially stacked in the same manner as the data line DL.

In this case, the opaque conductive material layer may be formed of a material selected from Al / Cr, Al / Mo, Al (Nd) Al alloy, Al alloy, Mo alloy, Mo alloy, Al alloy, Mo alloy, Mo alloy, Mo alloy, Mo alloy, Layer structure such as a Mo alloy, Mo alloy / Al alloy, Mo / Al alloy, or the like, or a single layer structure of Mo, Ti, Cu, AlNd, Al, Cr, Mo alloy, Cu alloy, .

Although the data pad lower electrode 140c is formed on the same layer as the data line DL in the drawing, the data pad lower electrode 140c may be formed on the same layer as the gate pad electrode 110b, A link portion for electrically connecting the data pad lower electrode 140c and the data line DL may be further formed.

3C, a transparent conductive material layer 160 is deposited on the entire surface of the substrate 100 including the source and drain electrodes 140a and 140b, the data line DL, and the data pad lower electrode 140c. At this time, the transparent conductive material layer 160 may be formed of a conductive material such as tin oxide (TO), indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide Oxide: ITZO). The photosensitive organic material 200 is applied to the entire surface of the transparent conductive material layer 160. At this time, the photosensitive organic material 200 is preferably a photoresist (PR) or a photoactive compound (PAC).

Then, as shown in FIG. 3D, the photosensitive organic material 200 is exposed using a third mask to form a first photosensitive organic material pattern 200a. At this time, the third mask is a halftone mask, and the first photosensitive organic material pattern 200a has a double step. That is, the first photosensitive organic material pattern 200a exposes the remaining region except the opening region where the pixel electrode is to be formed and the region corresponding to the data line DL, and the thickness of the first photosensitive organic material pattern 200a corresponds to the data line DL) is larger than the opening area.

Next, the transparent conductive material layer 160 is patterned using the first photosensitive organic material pattern 200a as a mask to form a pixel electrode 160a having a tubular electrode shape in the opening region. Since the pixel electrode 160a is directly connected to the drain electrode 140b of the thin film transistor without a contact hole, the aperture ratio of the display device can be improved.

At the same time, the transparent conductive pattern 160b is also formed on the data line DL. At this time, the transparent conductive pattern 160b is formed to cover the entire surface of the data line DL so as to shield the pixel signal of the data line DL, thereby preventing the pixel signal from affecting the adjacent pixel region. In addition, even if a disconnected portion occurs in the data line DL, it is formed so as to cover the entire surface of the data line DL, so that the disconnected portion can be repaired.

Then, the first photosensitive organic material pattern 200a is ashed by an ashing process using oxygen plasma to form a second photosensitive organic material pattern 200b as shown in FIG. 3E. At this time, the second photosensitive organic material pattern 200b remains only on the transparent conductive pattern 160b, and the pixel electrode 160a is exposed. In particular, the second photosensitive organic material pattern 200b is reduced in thickness as well as thickness through ashing, thereby exposing the edges of the transparent conductive pattern 160b.

Thus, as shown in FIG. 3F, a curing process is performed on the second photosensitive organic material pattern 200b to form a photosensitive organic material pattern 200c that completely covers the transparent conductive pattern 160b. At this time, the curing process is carried out at 200 ° C to 250 ° C for 20 minutes to 40 minutes using an oven or a hot plate. The second photosensitive organic material pattern 200b on the transparent conductive pattern 160b flows through the curing process to form the photosensitive organic material pattern 200c that completely covers the transparent conductive pattern 140b, The process of curing the photosensitive organic material pattern 200c is performed.

The photosensitive organic material pattern 200b flows to the gate insulating film 120 so as to cover not only the upper portion of the transparent conductive pattern 160b but also the side surface of the transparent conductive pattern 160b to form the transparent conductive pattern 160b ), The step between the photosensitive organic material pattern 200c and the gate insulating film 120 is lowered. As a result, it is possible to prevent the protective film, which will be described later, from breaking at the step of the photosensitive organic material pattern 200c. Particularly, the fume generated in the photosensitive organic material pattern 200c is released through the curing process to prevent the fume from being emitted from the photosensitive organic material pattern 200c during the protective film process described below, thereby improving the film quality of the protective film can do.

Next, as shown in FIG. 3G, a protective film 150 is formed on the entire surface of the substrate 100 including the photoresist pattern 200c. The protective film 150 is formed of an inorganic insulating material such as silicon oxide (SiOx), silicon nitride (SiNx), or the like. A gate contact hole 150a is formed to selectively expose the gate pad lower electrode 100b and the data pad lower electrode 140c by selectively removing the gate insulating film 120 and the passivation film 150 using the fourth mask. And data contact holes 150b.

3H, a transparent conductive material is deposited on the entire surface of the substrate 100 including the gate contact hole 150a and the data contact hole 150b, and the transparent conductive material is patterned using the fifth mask, A gate pad upper electrode 180b, and a data pad upper electrode 180c. The common electrode 180a is formed in a plurality of slits so as to overlap with the pixel electrode 160a and is also formed in a region overlapping the third photoresist pattern 200c. The gate pad upper electrode 180b is connected to the gate pad lower electrode 100b via the gate contact hole 150a and the data pad upper electrode 180c is connected to the data pad lower electrode 140c through the data contact hole 150b. .

In the thin film transistor substrate of the present invention, the pixel electrode 160a and the common electrode 180a form a fringe electric field with the protective film 150 interposed therebetween. The liquid crystal molecules rotate due to the dielectric anisotropy by the fringing electric field, and the light transmittance transmitted through the pixel region changes according to the degree of rotation of the liquid crystal molecules, thereby realizing an image.

In the method of manufacturing a thin film transistor substrate according to the present invention, a thin film transistor substrate is formed by a total of five mask processes, thereby simplifying the process and reducing manufacturing cost. In addition, the transparent conductive pattern 160b is formed on the data line DL while the pixel electrode 160a is formed, so that even if a disconnected portion occurs in the data line DL, The site can be repaired.

In addition, the transparent conductive pattern 160b shields the pixel signal of the data line DL to prevent the pixel signal from affecting the adjacent pixel region, and the drain electrode 140b and the pixel electrode 160a are electrically connected to the contact hole The aperture ratio of the display device can be improved.

While the present invention has been described in connection with what is presently considered to be the most practical and preferred embodiment, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims. Will be apparent to those of ordinary skill in the art.

DL: data line 100: substrate
100a: gate electrode 100b: gate pad lower electrode
120: gate insulating film 130: semiconductor layer
130a: active layer 130b: ohmic contact layer
140a: source electrode 140b: drain electrode
140c: Data pad lower electrode 150: Protective film
150a: gate contact hole 150b: data contact hole
160: transparent conductive material layer 160a: pixel electrode
160b: transparent conductive pattern 180a: common electrode
180b: Data pad upper electrode 180c: Gate pad upper electrode
200: photosensitive organic material 200a: first photosensitive organic material pattern
200b: second photosensitive organic material pattern 200c: photosensitive organic material pattern

Claims (9)

Board;
A gate line and a gate electrode formed on the substrate;
A gate insulating film formed on the entire surface of the substrate including the gate electrode;
A thin film transistor formed at a crossing region of the gate line and the data line and a data line crossing the gate line and defining a pixel region with the gate insulating film interposed therebetween;
A pixel electrode formed on the gate insulating layer and directly connected to the thin film transistor, and a transparent conductive pattern formed to cover the entire surface of the data line with the same material as the pixel electrode;
A photosensitive organic pattern formed on the gate insulating film so as to completely cover the top and side surfaces of the transparent conductive pattern;
A protective film formed on the entire surface of the substrate including the photosensitive organic material pattern; And
And a plurality of slit-shaped common electrodes overlapping the pixel electrodes with the protective film interposed therebetween. The method according to claim 1,
Wherein the photosensitive organic material pattern is formed of a photoresist (PR) or a photoactive compound (PAC). The method according to claim 1,
Wherein the common electrode is also formed on the passivation layer overlapping the data line. The method according to claim 1,
A gate pad lower electrode formed at one end of the gate line;
A data pad lower electrode formed at one end of the data line;
A gate contact hole and a data contact hole for selectively removing the gate insulating film and the protective film to expose the gate pad lower electrode and the data pad lower electrode, respectively; And
Further comprising a gate pad upper electrode and a data pad upper electrode connected to the gate pad lower electrode and the data pad lower electrode through the gate contact hole and the data contact hole, respectively. Forming a gate line and a gate electrode on the substrate;
Forming a gate insulating film on the entire surface of the substrate including the gate electrode, forming a data line crossing the gate line with the gate insulating film interposed therebetween, and a thin film transistor in an intersecting region between the gate line and the data line;
Depositing a layer of a transparent conductive material on the entire surface of the substrate including the thin film transistor and the data line, and applying a photosensitive organic material on the transparent conductive material layer;
Exposing and developing the photosensitive organic material to form a first photosensitive organic material pattern;
Patterning the transparent conductive material layer using the first photosensitive organic material pattern as a mask to form a transparent conductive pattern on a pixel electrode directly connected to the thin film transistor and on the entire surface of the data line;
Forming a second photosensitive organic pattern remaining on the transparent conductive pattern by ashing the first photosensitive organic pattern;
Forming a photosensitive organic material pattern on the gate insulating layer so as to completely cover upper and side surfaces of the transparent conductive pattern by performing a curing process on the second photosensitive organic material pattern;
Forming a protective film on the entire surface of the substrate including the photosensitive organic material pattern; And
And forming a plurality of slit-shaped common electrodes overlapping the pixel electrodes with the protective film interposed therebetween. delete 6. The method of claim 5,
Wherein the curing process is performed at 200 ° C to 250 ° C for 20 minutes to 40 minutes. 6. The method of claim 5,
Wherein the step of forming the common electrode includes forming the common electrode on the protective film overlapping the data line. 6. The method of claim 5,
Forming a gate pad lower electrode at one end of the gate line;
Forming a data pad lower electrode at one end of the data line;
Forming a gate contact hole and a data contact hole for selectively exposing the gate pad lower electrode and the data pad lower electrode, respectively, by selectively removing the gate insulating film and the protection film; And
Forming a gate pad upper electrode and a data pad upper electrode to be connected to the gate pad lower electrode and the data pad lower electrode through the gate contact hole and the data contact hole, respectively, Way.

Images