KR101959945B1 - 빔렛 위치를 결정하기 위한 방법 및 멀티 빔렛 노출 장치에서 2개의 빔렛들 간의 거리를 결정하기 위한 방법 - Google Patents

빔렛 위치를 결정하기 위한 방법 및 멀티 빔렛 노출 장치에서 2개의 빔렛들 간의 거리를 결정하기 위한 방법 Download PDF

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KR101959945B1
KR101959945B1 KR1020147035204A KR20147035204A KR101959945B1 KR 101959945 B1 KR101959945 B1 KR 101959945B1 KR 1020147035204 A KR1020147035204 A KR 1020147035204A KR 20147035204 A KR20147035204 A KR 20147035204A KR 101959945 B1 KR101959945 B1 KR 101959945B1
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beamlet
charged particle
beamlets
dimensional
blocking
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KR20150013802A (ko
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폴 이즈머트 셰퍼
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마퍼 리쏘그라피 아이피 비.브이.
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/14—Measuring arrangements characterised by the use of optical techniques for measuring distance or clearance between spaced objects or spaced apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H01J37/3045—Object or beam position registration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/065—Source emittance characteristics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24571—Measurements of non-electric or non-magnetic variables
    • H01J2237/24578—Spatial variables, e.g. position, distance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31774—Multi-beam

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electron Beam Exposure (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
KR1020147035204A 2012-05-14 2013-05-14 빔렛 위치를 결정하기 위한 방법 및 멀티 빔렛 노출 장치에서 2개의 빔렛들 간의 거리를 결정하기 위한 방법 Active KR101959945B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261646430P 2012-05-14 2012-05-14
US61/646,430 2012-05-14
PCT/EP2013/059861 WO2013171177A1 (en) 2012-05-14 2013-05-14 Method for determining a beamlet position and method for determining a distance between two beamlets in a multi-beamlet exposure apparatus

Publications (2)

Publication Number Publication Date
KR20150013802A KR20150013802A (ko) 2015-02-05
KR101959945B1 true KR101959945B1 (ko) 2019-03-19

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KR1020147035204A Active KR101959945B1 (ko) 2012-05-14 2013-05-14 빔렛 위치를 결정하기 위한 방법 및 멀티 빔렛 노출 장치에서 2개의 빔렛들 간의 거리를 결정하기 위한 방법

Country Status (6)

Country Link
US (2) US9653259B2 (https=)
JP (1) JP6239595B2 (https=)
KR (1) KR101959945B1 (https=)
NL (1) NL2010795C2 (https=)
TW (1) TWI582542B (https=)
WO (1) WO2013171177A1 (https=)

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RU2603178C2 (ru) * 2011-06-07 2016-11-20 Кэафьюжн Германи 326 Гмбх Устройство для разделения штучных товаров, предназначенных для хранения в автоматизированных складских помещениях
NL2012029C2 (en) * 2013-12-24 2015-06-26 Mapper Lithography Ip Bv Charged particle lithography system with sensor assembly.
JP6537592B2 (ja) * 2014-08-19 2019-07-03 インテル・コーポレーション 電子ビーム（ｅｂｅａｍ）直接書き込みシステムのためのコーナー部の丸み補正
KR102330221B1 (ko) 2014-11-05 2021-11-25 삼성디스플레이 주식회사 유기 발광 소자 및 이를 포함하는 표시 장치
US10008364B2 (en) * 2015-02-27 2018-06-26 Kla-Tencor Corporation Alignment of multi-beam patterning tool
KR102333285B1 (ko) 2015-08-20 2021-11-30 삼성전자주식회사 노광 장치
JP2018010895A (ja) * 2016-07-11 2018-01-18 株式会社ニューフレアテクノロジー ブランキングアパーチャアレイ、ブランキングアパーチャアレイの製造方法、及びマルチ荷電粒子ビーム描画装置
US11131541B2 (en) 2018-06-29 2021-09-28 Taiwan Semiconductor Manufacturing Co., Ltd. Shutter monitoring system
DE102018124044B3 (de) 2018-09-28 2020-02-06 Carl Zeiss Microscopy Gmbh Verfahren zum Betreiben eines Vielstrahl-Teilchenstrahlmikroskops und Vielstrahl-Teilchenstrahlsystem
WO2023110331A1 (en) * 2021-12-17 2023-06-22 Asml Netherlands B.V. Charged-particle optical apparatus and projection method
EP4199031A1 (en) * 2021-12-17 2023-06-21 ASML Netherlands B.V. Charged-particle optical apparatus and projection method
EP4202970A1 (en) * 2021-12-24 2023-06-28 ASML Netherlands B.V. Alignment determination method and computer program

Citations (2)

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JP2000208079A (ja) 1998-08-31 2000-07-28 Nikon Corp 電子線の強度分布を測定するピンホ―ル検出器
JP2005347054A (ja) 2004-06-02 2005-12-15 Hitachi High-Technologies Corp 電子ビーム検出器、並びにそれを用いた電子ビーム描画方法及び電子ビーム描画装置

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JPS5468149A (en) * 1977-11-11 1979-06-01 Erionikusu Kk Electron ray application device
JPS5570024A (en) * 1978-11-21 1980-05-27 Chiyou Lsi Gijutsu Kenkyu Kumiai Electron beam exposure method
JP2644257B2 (ja) * 1988-03-08 1997-08-25 株式会社東芝 ビーム検出用ターゲット
EP1335249A1 (en) * 2002-02-06 2003-08-13 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
JP3544657B2 (ja) * 2002-09-13 2004-07-21 株式会社日立製作所 電子ビーム描画装置
ATE538412T1 (de) 2002-10-25 2012-01-15 Mapper Lithography Ip Bv Lithographisches system
JP2005032508A (ja) * 2003-07-10 2005-02-03 Tokyo Seimitsu Co Ltd 電子ビーム強度分布測定装置、電子ビーム装置、電子ビーム露光装置及び電子ビーム強度分布測定方法
JP4907092B2 (ja) * 2005-03-01 2012-03-28 株式会社日立ハイテクノロジーズ 電子ビーム描画装置および電子ビーム描画方法
US7868300B2 (en) * 2005-09-15 2011-01-11 Mapper Lithography Ip B.V. Lithography system, sensor and measuring method
JP5199097B2 (ja) * 2005-09-15 2013-05-15 マッパー・リソグラフィー・アイピー・ビー．ブイ． リソグラフィシステム、センサ、測定方法
NL1037820C2 (en) * 2010-03-22 2011-09-23 Mapper Lithography Ip Bv Lithography system, sensor, sensor surface element and method of manufacture.
RU2576018C2 (ru) 2010-11-13 2016-02-27 МЭППЕР ЛИТОГРАФИ АйПи Б.В. Способ определения расстояния между двумя составляющими лучами в устройстве экспонирования с множеством составляющих лучей

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Publication number Priority date Publication date Assignee Title
JP2000208079A (ja) 1998-08-31 2000-07-28 Nikon Corp 電子線の強度分布を測定するピンホ―ル検出器
JP2005347054A (ja) 2004-06-02 2005-12-15 Hitachi High-Technologies Corp 電子ビーム検出器、並びにそれを用いた電子ビーム描画方法及び電子ビーム描画装置

Also Published As

Publication number Publication date
JP6239595B2 (ja) 2017-11-29
JP2015517734A (ja) 2015-06-22
NL2010795A (en) 2013-11-18
US9653259B2 (en) 2017-05-16
KR20150013802A (ko) 2015-02-05
USRE49483E1 (en) 2023-04-04
US20150155136A1 (en) 2015-06-04
TW201400992A (zh) 2014-01-01
TWI582542B (zh) 2017-05-11
WO2013171177A9 (en) 2014-01-30
NL2010795C2 (en) 2013-12-31
WO2013171177A1 (en) 2013-11-21

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