NL2010795C2 - Method for determining a beamlet position and method for determining a distance between two beamlets in a multi-beamlet exposure apparatus. - Google Patents
Method for determining a beamlet position and method for determining a distance between two beamlets in a multi-beamlet exposure apparatus. Download PDFInfo
- Publication number
- NL2010795C2 NL2010795C2 NL2010795A NL2010795A NL2010795C2 NL 2010795 C2 NL2010795 C2 NL 2010795C2 NL 2010795 A NL2010795 A NL 2010795A NL 2010795 A NL2010795 A NL 2010795A NL 2010795 C2 NL2010795 C2 NL 2010795C2
- Authority
- NL
- Netherlands
- Prior art keywords
- beamlet
- blocking
- dimensional pattern
- charged particle
- dimensional
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 48
- 230000000903 blocking effect Effects 0.000 claims description 73
- 239000002245 particle Substances 0.000 claims description 68
- 238000005259 measurement Methods 0.000 claims description 65
- 238000006243 chemical reaction Methods 0.000 claims description 31
- 230000004044 response Effects 0.000 claims description 8
- 239000010410 layer Substances 0.000 description 22
- 238000001459 lithography Methods 0.000 description 18
- 238000010894 electron beam technology Methods 0.000 description 13
- 239000000463 material Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000013461 design Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000000691 measurement method Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 238000000609 electron-beam lithography Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
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- 239000004065 semiconductor Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- PSNPEOOEWZZFPJ-UHFFFAOYSA-N alumane;yttrium Chemical compound [AlH3].[Y] PSNPEOOEWZZFPJ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
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- 230000000295 complement effect Effects 0.000 description 1
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- 229910044991 metal oxide Inorganic materials 0.000 description 1
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- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/14—Measuring arrangements characterised by the use of optical techniques for measuring distance or clearance between spaced objects or spaced apertures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
- H01J37/3045—Object or beam position registration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
- H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/065—Source emittance characteristics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
- H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24571—Measurements of non-electric or non-magnetic variables
- H01J2237/24578—Spatial variables, e.g. position, distance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31774—Multi-beam
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electron Beam Exposure (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261646430P | 2012-05-14 | 2012-05-14 | |
| US201261646430 | 2012-05-14 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| NL2010795A NL2010795A (en) | 2013-11-18 |
| NL2010795C2 true NL2010795C2 (en) | 2013-12-31 |
Family
ID=48463964
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL2010795A NL2010795C2 (en) | 2012-05-14 | 2013-05-14 | Method for determining a beamlet position and method for determining a distance between two beamlets in a multi-beamlet exposure apparatus. |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US9653259B2 (https=) |
| JP (1) | JP6239595B2 (https=) |
| KR (1) | KR101959945B1 (https=) |
| NL (1) | NL2010795C2 (https=) |
| TW (1) | TWI582542B (https=) |
| WO (1) | WO2013171177A1 (https=) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2603178C2 (ru) * | 2011-06-07 | 2016-11-20 | Кэафьюжн Германи 326 Гмбх | Устройство для разделения штучных товаров, предназначенных для хранения в автоматизированных складских помещениях |
| NL2012029C2 (en) * | 2013-12-24 | 2015-06-26 | Mapper Lithography Ip Bv | Charged particle lithography system with sensor assembly. |
| JP6537592B2 (ja) * | 2014-08-19 | 2019-07-03 | インテル・コーポレーション | 電子ビーム（ｅｂｅａｍ）直接書き込みシステムのためのコーナー部の丸み補正 |
| KR102330221B1 (ko) | 2014-11-05 | 2021-11-25 | 삼성디스플레이 주식회사 | 유기 발광 소자 및 이를 포함하는 표시 장치 |
| US10008364B2 (en) * | 2015-02-27 | 2018-06-26 | Kla-Tencor Corporation | Alignment of multi-beam patterning tool |
| KR102333285B1 (ko) | 2015-08-20 | 2021-11-30 | 삼성전자주식회사 | 노광 장치 |
| JP2018010895A (ja) * | 2016-07-11 | 2018-01-18 | 株式会社ニューフレアテクノロジー | ブランキングアパーチャアレイ、ブランキングアパーチャアレイの製造方法、及びマルチ荷電粒子ビーム描画装置 |
| US11131541B2 (en) | 2018-06-29 | 2021-09-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Shutter monitoring system |
| DE102018124044B3 (de) | 2018-09-28 | 2020-02-06 | Carl Zeiss Microscopy Gmbh | Verfahren zum Betreiben eines Vielstrahl-Teilchenstrahlmikroskops und Vielstrahl-Teilchenstrahlsystem |
| WO2023110331A1 (en) * | 2021-12-17 | 2023-06-22 | Asml Netherlands B.V. | Charged-particle optical apparatus and projection method |
| EP4199031A1 (en) * | 2021-12-17 | 2023-06-21 | ASML Netherlands B.V. | Charged-particle optical apparatus and projection method |
| EP4202970A1 (en) * | 2021-12-24 | 2023-06-28 | ASML Netherlands B.V. | Alignment determination method and computer program |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5468149A (en) * | 1977-11-11 | 1979-06-01 | Erionikusu Kk | Electron ray application device |
| JPS5570024A (en) * | 1978-11-21 | 1980-05-27 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Electron beam exposure method |
| JP2644257B2 (ja) * | 1988-03-08 | 1997-08-25 | 株式会社東芝 | ビーム検出用ターゲット |
| US6353231B1 (en) * | 1998-08-31 | 2002-03-05 | Nikon Corporation | Pinhole detector for electron intensity distribution |
| EP1335249A1 (en) * | 2002-02-06 | 2003-08-13 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP3544657B2 (ja) * | 2002-09-13 | 2004-07-21 | 株式会社日立製作所 | 電子ビーム描画装置 |
| ATE538412T1 (de) | 2002-10-25 | 2012-01-15 | Mapper Lithography Ip Bv | Lithographisches system |
| JP2005032508A (ja) * | 2003-07-10 | 2005-02-03 | Tokyo Seimitsu Co Ltd | 電子ビーム強度分布測定装置、電子ビーム装置、電子ビーム露光装置及び電子ビーム強度分布測定方法 |
| JP3962778B2 (ja) | 2004-06-02 | 2007-08-22 | 株式会社日立ハイテクノロジーズ | 電子ビーム検出器、並びにそれを用いた電子ビーム描画方法及び電子ビーム描画装置 |
| JP4907092B2 (ja) * | 2005-03-01 | 2012-03-28 | 株式会社日立ハイテクノロジーズ | 電子ビーム描画装置および電子ビーム描画方法 |
| US7868300B2 (en) * | 2005-09-15 | 2011-01-11 | Mapper Lithography Ip B.V. | Lithography system, sensor and measuring method |
| JP5199097B2 (ja) * | 2005-09-15 | 2013-05-15 | マッパー・リソグラフィー・アイピー・ビー．ブイ． | リソグラフィシステム、センサ、測定方法 |
| NL1037820C2 (en) * | 2010-03-22 | 2011-09-23 | Mapper Lithography Ip Bv | Lithography system, sensor, sensor surface element and method of manufacture. |
| RU2576018C2 (ru) | 2010-11-13 | 2016-02-27 | МЭППЕР ЛИТОГРАФИ АйПи Б.В. | Способ определения расстояния между двумя составляющими лучами в устройстве экспонирования с множеством составляющих лучей |
-
2013
- 2013-05-14 TW TW102117002A patent/TWI582542B/zh active
- 2013-05-14 JP JP2015512021A patent/JP6239595B2/ja active Active
- 2013-05-14 WO PCT/EP2013/059861 patent/WO2013171177A1/en not_active Ceased
- 2013-05-14 US US14/400,815 patent/US9653259B2/en not_active Ceased
- 2013-05-14 US US16/414,386 patent/USRE49483E1/en active Active
- 2013-05-14 NL NL2010795A patent/NL2010795C2/en active
- 2013-05-14 KR KR1020147035204A patent/KR101959945B1/ko active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP6239595B2 (ja) | 2017-11-29 |
| JP2015517734A (ja) | 2015-06-22 |
| NL2010795A (en) | 2013-11-18 |
| US9653259B2 (en) | 2017-05-16 |
| KR20150013802A (ko) | 2015-02-05 |
| USRE49483E1 (en) | 2023-04-04 |
| US20150155136A1 (en) | 2015-06-04 |
| TW201400992A (zh) | 2014-01-01 |
| TWI582542B (zh) | 2017-05-11 |
| WO2013171177A9 (en) | 2014-01-30 |
| WO2013171177A1 (en) | 2013-11-21 |
| KR101959945B1 (ko) | 2019-03-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RC | Pledge established |
Free format text: DETAILS LICENCE OR PLEDGE: RIGHT OF PLEDGE, ESTABLISHED Name of requester: DE STAAT DER NEDERLANDEN / RIJKSDIENST VOOR ONDERN Effective date: 20180621 |
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| PD | Change of ownership |
Owner name: ASML NETHERLANDS B.V.; NL Free format text: DETAILS ASSIGNMENT: CHANGE OF OWNER(S), ASSIGNMENT; FORMER OWNER NAME: MAPPER LITHOGRAPHY IP B.V. Effective date: 20190425 |