KR101956128B1 - Tape type optical component package and manufacturing method thereof - Google Patents

Tape type optical component package and manufacturing method thereof Download PDF

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Publication number
KR101956128B1
KR101956128B1 KR1020110142518A KR20110142518A KR101956128B1 KR 101956128 B1 KR101956128 B1 KR 101956128B1 KR 1020110142518 A KR1020110142518 A KR 1020110142518A KR 20110142518 A KR20110142518 A KR 20110142518A KR 101956128 B1 KR101956128 B1 KR 101956128B1
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KR
South Korea
Prior art keywords
metal layer
optical device
bonding portion
chip bonding
device package
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Application number
KR1020110142518A
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Korean (ko)
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KR20130074452A (en
Inventor
백지흠
하만형
Original Assignee
엘지이노텍 주식회사
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Priority to KR1020110142518A priority Critical patent/KR101956128B1/en
Publication of KR20130074452A publication Critical patent/KR20130074452A/en
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Publication of KR101956128B1 publication Critical patent/KR101956128B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

The present invention provides a tape-type optical device package and a manufacturing method thereof. Wherein the tape-type optical device package comprises: a metal layer formed by recessing the surface of the chip bonding portion at which the optical device is mounted from its center; An insulating film formed on one surface of the metal layer and having through holes for the chip bonding portion; And an optical element mounted on the chip bonding portion and electrically connected to the metal layer. Further, in the tape-type optical device package according to the present invention, the metal layer includes a plurality of supports formed by being recessed from its surface in the periphery, and the insulation film includes through holes for the plurality of supports. Accordingly, when the optical device package and the method of manufacturing the same according to the present invention are used, the support portions formed on the metal layer serve as supports when soldering on the substrate, resulting in a misalignment between the optical device package and the mounting substrate, It is possible to prevent lifting from the substrate.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a tape-type optical device package,

The present invention relates to a tape-type optical device package and a manufacturing method thereof.

Light emitting diodes (LEDs) are used to produce a small number of injected carriers (electrons or holes) by using a pn junction structure of semiconductors, and by recombining the electrical energy into light energy, Diode. That is, when a forward voltage is applied to a semiconductor of a specific element, electrons and holes move through the junction between the anode and the cathode and recombine with each other. Since the electrons and holes are separated from each other, energy is smaller than that of electrons and holes. Release.

Such LEDs are being applied not only to a general display device but also to a backlight device of a lighting device or an LCD display device. In particular, LEDs can be driven at a relatively low voltage, have a low heat generation due to high energy efficiency and have a long life span. As technology for providing white light at a high luminance, which was difficult to implement conventionally, has been developed, It is expected that it will replace the light source device.

The LED package including such an LED includes a lead frame type LED package and a tape type LED package. However, since the lead frame type LED package has a low package efficiency area, it is difficult to integrate the LED chip. Since the package size is relatively large compared to the chip size, the thickness and the outer area of the product are inevitably increased. In addition, a separate heat sink is required to release heat generated from the LED chip, thereby increasing its thickness and volume.

A tape-type LED package which solves the problem of such a lead frame type LED package is known.

1 is a cross-sectional view of a conventional tape-type LED package.

Referring to FIG. 1, a tape-type LED package 100 includes an insulating film 110 formed with a via hole, a metal layer 120 disposed on one surface of the insulating film 110 and having a circuit pattern formed thereon, An adhesive layer 112 for bonding the metal layer 120 on the metal layer 110 and an LED 130 mounted on the metal layer 120 and electrically connected to the circuit pattern of the metal layer 120 through the wire 140 do. The tape-type LED package 100 also includes a molding part 150 formed by molding the LED 130 using a resin or the like.

This LED package 100 is attached to a printed circuit board. In this case, the LED package 100 may arrange a heat conduction member between the LED 130 and the printed circuit board to increase heat dissipation efficiency. In addition, a reflective layer may be formed on a portion of the metal layer on which the LED 130 is mounted to increase light efficiency.

As described above, the conventional LED package uses a separate process or member for the light efficiency and the heat dissipation efficiency, which increases the manufacturing cost and complicates the manufacturing process.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a tape-type optical device package improved in light efficiency and heat radiation efficiency and a manufacturing method thereof.

According to an aspect of the present invention, there is provided a tape-type optical device package including: a metal layer formed by recessing a surface of a chip bonding portion in which a photo- An insulating film formed on one surface of the metal layer and having through holes for the chip bonding portion; And an optical element mounted on the chip bonding portion and electrically connected to the metal layer. The metal layer may include a plurality of supports formed by being recessed from the surface at the periphery.

The insulating film may include through holes for the plurality of supports.

The plurality of supports may have a height equal to or greater than a height of the chip bonding portion.

The insulating film may be made of polyimide.

The tape-type optical device package may further include a phosphor layer formed by filling the chip bonding portion with a fluorescent material.

The metal layer may include a circuit pattern.

The tape-type optical device package may further include a wire electrically connecting the optical element and the circuit pattern.

The plurality of supports may be formed around the chip bonding portion.

According to another aspect of the present invention, there is provided a method of manufacturing a tape-type optical device package, comprising: forming through holes at the center of an insulating layer; Forming a metal layer on one surface of the insulating layer; A portion of the metal layer corresponding to the through hole formed in the center of the insulating layer is recessed toward the insulating layer to form a chip bonding portion; And mounting an optical element on the chip bonding portion to be electrically connected to the metal layer.

The tape-type optical device package manufacturing method includes: forming through holes in the periphery of an insulating layer; And forming a supporting portion by recessing a portion of the metal layer corresponding to the through hole formed in the periphery of the insulating layer toward the insulating layer.

The tape-type optical device package manufacturing method may further include forming an adhesive layer by applying an adhesive material on one surface of the insulating film on which the metal layer is located, before forming the metal layer.

The tape-type optical device package manufacturing method may further include forming the phosphor layer by filling the chip bonding portion with a fluorescent material after mounting the optical device.

The tape-type optical device package manufacturing method may further include electrically connecting the optical device with the circuit pattern layer using a wire.

The optical device package and the method of manufacturing the same according to the present invention are characterized in that support portions formed on a metal layer serve as supports when soldered onto a substrate, resulting in misalignment between the optical device package and the mounting substrate, It is possible to prevent lifting.

1 is a cross-sectional view of a conventional tape-type LED package.
2A is a cross-sectional view of a tape-type optical device package according to an embodiment of the present invention, and FIG. 2B is a top view of the tape-type optical device package of FIG. 2A.
3 is a view illustrating a manufacturing process of a tape-type optical device package according to an embodiment of the present invention.
4 is a view illustrating a downset process according to an embodiment of the present invention.
FIG. 5 is an enlarged view of a part of a chip bonding portion and a support portion formed according to the down-set process of FIG.
6 is a front view or a back view of a tape-type optical device package according to the present invention.

Hereinafter, a tape-type optical device package and a manufacturing method thereof according to a preferred embodiment will be described in detail with reference to the accompanying drawings. In the following description, well-known functions or constructions are not described in detail to avoid unnecessarily obscuring the subject matter of the present invention. In addition, the size of each component in the drawings may be exaggerated for the sake of explanation and does not mean a size actually applied.

In order to prevent the optical device package from being lifted or misaligned with the substrate when the optical device package is soldered to the substrate, the fabrication of the LED package may include a downset process to change the structure of the optical device package, (Down Set) The height difference can be used to optimize alignment with the substrate.

2A is a cross-sectional view of a tape-type optical device package according to an embodiment of the present invention, and FIG. 2B is a top view of the tape-type optical device package of FIG. 2A.

2A and 2B, a tape-type optical device package according to an embodiment of the present invention includes an insulating layer 210 formed with a via hole for mounting an optical device, an insulating layer 210 formed on the insulating layer 210, And a metal layer 220. The insulating layer 210 is preferably a polyimide film, but the present invention is not limited thereto. The insulating layer 210 may be made of a ceramic material resistant to thermal shock. In addition, the metal layer 220 is preferably made of copper (Cu).

The metal layer 220 is formed with a chip bonding part 225 on which the optical element 230 is mounted. Also, in the metal layer 220, when the optical device package is mounted on the substrate 260 of the apparatus using the optical device package, a plurality of supports 227 for supporting the optical device package are formed. The chip bonding portion 225 is located in the center region of the optical device package and the support portions 227 are located in the edge region of the optical device package. In this embodiment, the chip bonding portion 225 and the support portions 227 have a substantially circular shape. However, the present invention is not limited thereto, and the chip bonding portion 225 and the support portions 227 may have various shapes. For example, it may have a rectangular shape.

The insulating layer 210 is formed with through holes corresponding to the chip bonding portion 225 and the plurality of support portions 227. The chip bonding portion 225 and the supports 227 may be formed by a metal layer 220 laminated on the adhesive layer 212 and then pressed down toward the insulating layer 210 through the corresponding through- (down set) process. Accordingly, the chip bonding portion 225 and the support portions 227 are formed to be recessed from the surface of the metal layer 220.

2B, the support portions 227 are formed to have a width or height that is larger than the width or height of the chip bonding portion 225. As shown in FIG. For example, the chip bonding portion 225 has a height or width of 70 to 75 mu m based on the surface of the metal layer 220, and the support portion 227 has a height or width of 80 to 85 mu m. The height or width of the metal layer 220 is not limited to this, and may be changed depending on the material and thickness of the metal layer 220.

In this case, since the height of the support portions 227 located in the edge region of the optical device package is larger than the height of the chip bonding portion 225 located in the central region, the support portions 227 are connected to the chip bonding portions 225 ).

According to one embodiment, the supports 227 are each formed in the corner areas of the optical device package. For example, if the optical device package has a substantially rectangular shape, four support portions 227 are formed. According to another embodiment, the support portions 227 are formed in a sufficient number to stably support the chip bonding portion 225 in the peripheral region of the optical device package.

Alternatively, the support portions 227 are formed to have the same width or height as the width or height of the chip bonding portion 225. In this case, since the chip bonding portion 225 as well as the support portions 227 are in contact with the substrate 260, the optical device package is stably mounted on the substrate.

When soldered on the substrate 260, the four support portions 227 formed on the metal layer 220 serve as a support, and finally the alignment between the optical device package and the mounting substrate 260 And the lifting of the optical device package from the substrate 260 can be prevented.

The tape-type optical device package also includes an optical element 230 mounted on the chip bonding portion 225 and electrically connected to the metal layer 220.

The optical device package 200 may also include an adhesive layer 212 formed by applying an adhesive material on one side of the insulating layer 210 on which the metal layer 220 is to be formed, Is attached to the insulating layer (210) by the insulating layer (212). However, the present invention is not limited thereto, and the metal layer 220 may be fixed to one surface of the insulating layer 210 according to a technique known in the art without the adhesive layer 212.

Also, although not shown in the figure, the metal layer 220 may include a circuit pattern. Also, the metal layer 220 may be plated with a metal, preferably silver (Ag), to improve light efficiency. In this case, the light from the optical element 230 can be more reflected by the plating layer of the metal layer 220.

3 is a view illustrating a manufacturing process of a tape-type optical device package according to an embodiment of the present invention.

Referring to FIG. 3, an adhesive layer 212 is coated on one surface of the insulating layer 210 (S1). Here, the material of the insulating layer 210 may be polyimide or ceramic resistant to thermal shock.

The adhesive layer may be formed of a material including at least one of an epoxy resin, an acrylic resin and a polyimide resin. In particular, an epoxy resin or a polyimide resin is preferably used. For the purpose of imparting flexibility to these adhesive layer-forming materials, various natural rubbers, plasticizers, hardeners, flame retardants such as phosphorus, and various other additives may be added. In addition, a thermoplastic polyimide resin may be used as the polyimide resin, although thermoplastic polyimide is often used. However, it is to be understood that this is only one example, and that the adhesive layer of the present invention can be formed with a resin having all the adhesives that have been developed, commercialized, or can be implemented according to future technological developments.

After the adhesive layer 212 is applied, through holes 214 are formed in the insulating layer 210 (S2). According to the present invention, the through holes include through holes for the chip bonding portion 225 as well as through holes for the support portions 227. As a method for forming the through hole, a method of punching, a method of performing a drilling process using a laser, and the like can be used. In addition, A hole forming method may be used.

Next, the metal layer 220 is laminated on the adhesive layer 112 to form a circuit pattern on the metal layer 220 (S4). Specifically, after activating the surface of the metal layer 220 through various chemical treatments, the photoresist is applied, and exposure and development processes are performed. After the development process is completed, a circuit pattern (not shown) is formed on the metal layer 220 by forming a necessary circuit through the etching process and peeling off the photoresist. Next, a down-set process is performed to form a chip bonding portion 225 and support portions 227 (S4). It will be apparent to those skilled in the art that the steps of forming the circuit pattern on the metal layer 220 and forming the chip bonding portion 225 or the support portion 227 may be sequentially performed and the order may be changed.

FIG. 4 is a view illustrating a downset process according to an embodiment of the present invention, and FIG. 5 is an enlarged view of a chip bonding portion and a support portion formed according to the downset process of FIG.

Referring to FIG. 4, a chip bonding portion 225, which can mount the optical element 230 by performing a down set process for pressing a portion of the metal layer 220 corresponding to the chip bonding portion 225, . Simultaneously or sequentially, a downset process is performed to press portions of the metal layer 220 corresponding to the supports 227 to form the supports 227. As shown, a tool 310 for forming the chip bonding portion 225 and a tool 320 for forming the supports 227 are provided, respectively. In this case, any tool for pressing the metal layer 220 can be used. The two tools 310 and 320 press the metal layer 220 at different pressures depending on the downset process performed, respectively.

5, the support portions 227 are formed to have a width larger than the width of the chip bonding portion 225. As shown in Fig. For example, the chip bonding portion 225 has a height or width of 70 to 75 mu m based on the surface of the metal layer 220, and the support portion 227 has a height or width of 80 to 85 mu m. The height or width of the metal layer 220 is not limited to this, and may be changed depending on the material and thickness of the metal layer 220.

Referring again to FIG. 5, the optical element 230 or the optical device chip 230 is mounted on the chip bonding portion 125 (S5). In this case, the metal layer 220 may be plated with a metal such as silver (Ag). In this case, light from the optical element 230 can be more reflected from the metal layer 50 by metal plating.

Then, the optical element 230 is electrically connected to the metal layer 220 through the wire 240 (S6). Alternatively, a phosphor layer (not shown) may be further formed by filling the chip bonding portion 125 with a fluorescent material. After the wire 240 is connected, the optical element 230 and the wire 240 are molded with epoxy or glass to form the molding part 250. Each of the optical device packages 200 is manufactured in the above-described manner. The optical device package 200 is soldered on the substrate 260 of the device mounting or using the optical device package 200 (S8).

6 is a front view or a back view of a tape-type optical device package according to the present invention.

Referring to FIG. 6, in a conventional optical device package structure, only a chip bonding portion on which an optical device or an optical device chip is mounted is formed. On the other hand, in the optical device package structure of the present invention, not only the chip bonding portion where the optical device or the optical device chip is mounted, but also the support portions are formed at the edge portion of the optical device package to support the optical device package.

As described above, when the optical device package according to the present invention is soldered onto a substrate, the support portions formed in the metal layer serve as a support, and eventually the misalignment between the optical device package and the mounting substrate, Can be prevented. In addition, the bottom surface of the photonic device package is supported by the supports to have improved flatness on the substrate.

The tape-type optical device package manufactured as described above can be efficiently used in the field of LEDs, which are currently widely used.

In the foregoing detailed description of the present invention, specific examples have been described. However, various modifications are possible within the scope of the present invention. The technical spirit of the present invention should not be limited to the above-described embodiments of the present invention, but should be determined by the claims and equivalents thereof.

210: insulating layer 212: adhesive layer
214: Through hole 225: Chip bonding part
227: Support part 230: Optical element
240: wire 250: molding part
260: substrate

Claims (14)

A metal layer formed on the substrate and formed by recessing the chip bonding portion in which the photo-voltaic device is mounted, from the surface of the chip bonding portion toward the substrate;
An insulating film formed on one surface of the metal layer and having through holes for the chip bonding portion; And
And an optical element mounted on the chip bonding portion and electrically connected to the metal layer,
Wherein the metal layer includes a plurality of support portions located at the periphery of the chip bonding portion and recessed from the surface thereof,
Wherein each of the plurality of supports has a height equal to or higher than a height of the chip bonding portion and is disposed apart from the chip bonding portion by the insulating film and is in direct contact with one surface of the substrate,
Wherein the bonding portion is disposed apart from one surface of the substrate. delete delete The method according to claim 1,
Wherein the insulating film is made of polyimide. The method according to claim 1,
And a phosphor layer formed by filling the chip bonding portion with a fluorescent material. The method according to claim 1,
Wherein the metal layer comprises a circuit pattern. The method according to claim 6,
And a wire electrically connecting the optical element and the circuit pattern. delete delete delete delete delete delete delete
KR1020110142518A 2011-12-26 2011-12-26 Tape type optical component package and manufacturing method thereof KR101956128B1 (en)

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Application Number Priority Date Filing Date Title
KR1020110142518A KR101956128B1 (en) 2011-12-26 2011-12-26 Tape type optical component package and manufacturing method thereof

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KR101956128B1 true KR101956128B1 (en) 2019-03-12

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210044344A (en) * 2019-10-14 2021-04-23 주식회사 세미콘라이트 Semiconductor light emitting device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101129002B1 (en) * 2010-04-28 2012-03-23 엘지이노텍 주식회사 Optical package and manufacturing method of the same
KR101146656B1 (en) * 2010-05-04 2012-05-22 엘지이노텍 주식회사 Optical package and manufacturing method of the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210044344A (en) * 2019-10-14 2021-04-23 주식회사 세미콘라이트 Semiconductor light emitting device
KR102275368B1 (en) 2019-10-14 2021-07-13 주식회사 에스엘바이오닉스 Semiconductor light emitting device

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