KR101947844B1 - 다수의 디커플링된 플라즈마 소스들을 갖는 반도체 프로세싱 시스템 - Google Patents

다수의 디커플링된 플라즈마 소스들을 갖는 반도체 프로세싱 시스템 Download PDF

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Publication number
KR101947844B1
KR101947844B1 KR1020137032848A KR20137032848A KR101947844B1 KR 101947844 B1 KR101947844 B1 KR 101947844B1 KR 1020137032848 A KR1020137032848 A KR 1020137032848A KR 20137032848 A KR20137032848 A KR 20137032848A KR 101947844 B1 KR101947844 B1 KR 101947844B1
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KR
South Korea
Prior art keywords
plasma
power
process gas
chamber
microchambers
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KR1020137032848A
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English (en)
Korean (ko)
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KR20140036224A (ko
Inventor
패트릭 홀랜드 존
엘. 지. 벤트젝 피터
하미트 싱
리차드 고트쵸
Original Assignee
램 리써치 코포레이션
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Priority claimed from US13/104,925 external-priority patent/US8900403B2/en
Priority claimed from US13/104,923 external-priority patent/US8900402B2/en
Application filed by 램 리써치 코포레이션 filed Critical 램 리써치 코포레이션
Publication of KR20140036224A publication Critical patent/KR20140036224A/ko
Application granted granted Critical
Publication of KR101947844B1 publication Critical patent/KR101947844B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32899—Multiple chambers, e.g. cluster tools

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020137032848A 2011-05-10 2012-05-07 다수의 디커플링된 플라즈마 소스들을 갖는 반도체 프로세싱 시스템 KR101947844B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US13/104,925 US8900403B2 (en) 2011-05-10 2011-05-10 Semiconductor processing system having multiple decoupled plasma sources
US13/104,923 2011-05-10
US13/104,925 2011-05-10
US13/104,923 US8900402B2 (en) 2011-05-10 2011-05-10 Semiconductor processing system having multiple decoupled plasma sources
PCT/US2012/036762 WO2012154666A1 (en) 2011-05-10 2012-05-07 Semiconductor processing system having multiple decoupled plasma sources

Publications (2)

Publication Number Publication Date
KR20140036224A KR20140036224A (ko) 2014-03-25
KR101947844B1 true KR101947844B1 (ko) 2019-02-13

Family

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Application Number Title Priority Date Filing Date
KR1020137032848A KR101947844B1 (ko) 2011-05-10 2012-05-07 다수의 디커플링된 플라즈마 소스들을 갖는 반도체 프로세싱 시스템

Country Status (4)

Country Link
KR (1) KR101947844B1 (zh)
CN (1) CN103748665B (zh)
SG (1) SG193614A1 (zh)
TW (1) TWI579911B (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6584786B2 (ja) * 2015-02-13 2019-10-02 株式会社日立ハイテクノロジーズ プラズマイオン源および荷電粒子ビーム装置
US20170092470A1 (en) * 2015-09-28 2017-03-30 Applied Materials, Inc. Plasma reactor for processing a workpiece with an array of plasma point sources
US11948783B2 (en) 2016-11-15 2024-04-02 Applied Materials, Inc. Dynamic phased array plasma source for complete plasma coverage of a moving substrate
CN108668422B (zh) * 2017-03-30 2021-06-08 北京北方华创微电子装备有限公司 一种等离子体产生腔室和等离子体处理装置
US11749504B2 (en) * 2018-02-28 2023-09-05 Applied Materials, Inc. Methods and apparatus for common excitation of frequency generators
ES2861810T3 (es) * 2019-01-25 2021-10-06 Ining S R O Dispositivo de gasificación y obturador de plasma con sistema de ralentización del dispositivo de gasificación
KR102610445B1 (ko) * 2020-12-08 2023-12-05 세메스 주식회사 플라즈마를 이용한 기판 처리 장치 및 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030153177A1 (en) 2002-02-11 2003-08-14 Applied Materials, Inc. Variable flow deposition apparatus and method in semiconductor substrate processing
US20080314523A1 (en) * 2007-06-25 2008-12-25 Tokyo Electron Limited Gas supply mechanism and substrate processing apparatus
US20110005681A1 (en) * 2009-07-08 2011-01-13 Stephen Edward Savas Plasma Generating Units for Processing a Substrate

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6017221A (en) * 1995-12-04 2000-01-25 Flamm; Daniel L. Process depending on plasma discharges sustained by inductive coupling
JP5165825B2 (ja) * 2000-01-10 2013-03-21 東京エレクトロン株式会社 分割された電極集合体並びにプラズマ処理方法。
US9184043B2 (en) * 2006-05-24 2015-11-10 Lam Research Corporation Edge electrodes with dielectric covers
US20070281105A1 (en) * 2006-06-02 2007-12-06 Nima Mokhlesi Atomic Layer Deposition of Oxides Using Krypton as an Ion Generating Feeding Gas
US8202393B2 (en) * 2007-08-29 2012-06-19 Lam Research Corporation Alternate gas delivery and evacuation system for plasma processing apparatuses
JP4585574B2 (ja) * 2008-02-26 2010-11-24 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
JP5309161B2 (ja) * 2009-01-14 2013-10-09 株式会社アルバック プラズマｃｖｄ装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030153177A1 (en) 2002-02-11 2003-08-14 Applied Materials, Inc. Variable flow deposition apparatus and method in semiconductor substrate processing
US20080314523A1 (en) * 2007-06-25 2008-12-25 Tokyo Electron Limited Gas supply mechanism and substrate processing apparatus
US20110005681A1 (en) * 2009-07-08 2011-01-13 Stephen Edward Savas Plasma Generating Units for Processing a Substrate

Also Published As

Publication number Publication date
KR20140036224A (ko) 2014-03-25
TWI579911B (zh) 2017-04-21
CN103748665B (zh) 2016-11-02
SG193614A1 (en) 2013-10-30
TW201301388A (zh) 2013-01-01
CN103748665A (zh) 2014-04-23

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