KR101947844B1 - 다수의 디커플링된 플라즈마 소스들을 갖는 반도체 프로세싱 시스템 - Google Patents
다수의 디커플링된 플라즈마 소스들을 갖는 반도체 프로세싱 시스템 Download PDFInfo
- Publication number
- KR101947844B1 KR101947844B1 KR1020137032848A KR20137032848A KR101947844B1 KR 101947844 B1 KR101947844 B1 KR 101947844B1 KR 1020137032848 A KR1020137032848 A KR 1020137032848A KR 20137032848 A KR20137032848 A KR 20137032848A KR 101947844 B1 KR101947844 B1 KR 101947844B1
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- plasma
- power
- process gas
- chamber
- microchambers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32633—Baffles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32899—Multiple chambers, e.g. cluster tools
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/104,925 US8900403B2 (en) | 2011-05-10 | 2011-05-10 | Semiconductor processing system having multiple decoupled plasma sources |
US13/104,923 | 2011-05-10 | ||
US13/104,925 | 2011-05-10 | ||
US13/104,923 US8900402B2 (en) | 2011-05-10 | 2011-05-10 | Semiconductor processing system having multiple decoupled plasma sources |
PCT/US2012/036762 WO2012154666A1 (en) | 2011-05-10 | 2012-05-07 | Semiconductor processing system having multiple decoupled plasma sources |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20140036224A KR20140036224A (ko) | 2014-03-25 |
KR101947844B1 true KR101947844B1 (ko) | 2019-02-13 |
Family
ID=48137596
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020137032848A KR101947844B1 (ko) | 2011-05-10 | 2012-05-07 | 다수의 디커플링된 플라즈마 소스들을 갖는 반도체 프로세싱 시스템 |
Country Status (4)
Country | Link |
---|---|
KR (1) | KR101947844B1 (zh) |
CN (1) | CN103748665B (zh) |
SG (1) | SG193614A1 (zh) |
TW (1) | TWI579911B (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6584786B2 (ja) * | 2015-02-13 | 2019-10-02 | 株式会社日立ハイテクノロジーズ | プラズマイオン源および荷電粒子ビーム装置 |
US20170092470A1 (en) * | 2015-09-28 | 2017-03-30 | Applied Materials, Inc. | Plasma reactor for processing a workpiece with an array of plasma point sources |
US11948783B2 (en) | 2016-11-15 | 2024-04-02 | Applied Materials, Inc. | Dynamic phased array plasma source for complete plasma coverage of a moving substrate |
CN108668422B (zh) * | 2017-03-30 | 2021-06-08 | 北京北方华创微电子装备有限公司 | 一种等离子体产生腔室和等离子体处理装置 |
US11749504B2 (en) * | 2018-02-28 | 2023-09-05 | Applied Materials, Inc. | Methods and apparatus for common excitation of frequency generators |
ES2861810T3 (es) * | 2019-01-25 | 2021-10-06 | Ining S R O | Dispositivo de gasificación y obturador de plasma con sistema de ralentización del dispositivo de gasificación |
KR102610445B1 (ko) * | 2020-12-08 | 2023-12-05 | 세메스 주식회사 | 플라즈마를 이용한 기판 처리 장치 및 방법 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030153177A1 (en) | 2002-02-11 | 2003-08-14 | Applied Materials, Inc. | Variable flow deposition apparatus and method in semiconductor substrate processing |
US20080314523A1 (en) * | 2007-06-25 | 2008-12-25 | Tokyo Electron Limited | Gas supply mechanism and substrate processing apparatus |
US20110005681A1 (en) * | 2009-07-08 | 2011-01-13 | Stephen Edward Savas | Plasma Generating Units for Processing a Substrate |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6017221A (en) * | 1995-12-04 | 2000-01-25 | Flamm; Daniel L. | Process depending on plasma discharges sustained by inductive coupling |
JP5165825B2 (ja) * | 2000-01-10 | 2013-03-21 | 東京エレクトロン株式会社 | 分割された電極集合体並びにプラズマ処理方法。 |
US9184043B2 (en) * | 2006-05-24 | 2015-11-10 | Lam Research Corporation | Edge electrodes with dielectric covers |
US20070281105A1 (en) * | 2006-06-02 | 2007-12-06 | Nima Mokhlesi | Atomic Layer Deposition of Oxides Using Krypton as an Ion Generating Feeding Gas |
US8202393B2 (en) * | 2007-08-29 | 2012-06-19 | Lam Research Corporation | Alternate gas delivery and evacuation system for plasma processing apparatuses |
JP4585574B2 (ja) * | 2008-02-26 | 2010-11-24 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理方法 |
JP5309161B2 (ja) * | 2009-01-14 | 2013-10-09 | 株式会社アルバック | プラズマcvd装置 |
-
2012
- 2012-05-07 SG SG2013071824A patent/SG193614A1/en unknown
- 2012-05-07 CN CN201280022675.5A patent/CN103748665B/zh active Active
- 2012-05-07 KR KR1020137032848A patent/KR101947844B1/ko active IP Right Grant
- 2012-05-10 TW TW101116685A patent/TWI579911B/zh active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030153177A1 (en) | 2002-02-11 | 2003-08-14 | Applied Materials, Inc. | Variable flow deposition apparatus and method in semiconductor substrate processing |
US20080314523A1 (en) * | 2007-06-25 | 2008-12-25 | Tokyo Electron Limited | Gas supply mechanism and substrate processing apparatus |
US20110005681A1 (en) * | 2009-07-08 | 2011-01-13 | Stephen Edward Savas | Plasma Generating Units for Processing a Substrate |
Also Published As
Publication number | Publication date |
---|---|
KR20140036224A (ko) | 2014-03-25 |
TWI579911B (zh) | 2017-04-21 |
CN103748665B (zh) | 2016-11-02 |
SG193614A1 (en) | 2013-10-30 |
TW201301388A (zh) | 2013-01-01 |
CN103748665A (zh) | 2014-04-23 |
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