SG193614A1 - Semiconductor processing system having multiple decoupled plasma sources - Google Patents
Semiconductor processing system having multiple decoupled plasma sources Download PDFInfo
- Publication number
- SG193614A1 SG193614A1 SG2013071824A SG2013071824A SG193614A1 SG 193614 A1 SG193614 A1 SG 193614A1 SG 2013071824 A SG2013071824 A SG 2013071824A SG 2013071824 A SG2013071824 A SG 2013071824A SG 193614 A1 SG193614 A1 SG 193614A1
- Authority
- SG
- Singapore
- Prior art keywords
- plasma
- power
- semiconductor substrate
- recited
- microchambers
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 82
- 239000000758 substrate Substances 0.000 claims abstract description 309
- 239000000470 constituent Substances 0.000 claims abstract description 78
- 210000002381 plasma Anatomy 0.000 claims description 659
- 238000000034 method Methods 0.000 claims description 178
- 239000007789 gas Substances 0.000 claims description 153
- 230000008569 process Effects 0.000 claims description 123
- 150000002500 ions Chemical class 0.000 claims description 98
- 238000004891 communication Methods 0.000 claims description 21
- 239000012530 fluid Substances 0.000 claims description 16
- 238000000605 extraction Methods 0.000 claims description 11
- 230000000153 supplemental effect Effects 0.000 claims description 5
- 230000004907 flux Effects 0.000 description 10
- 230000001965 increasing effect Effects 0.000 description 8
- 230000003247 decreasing effect Effects 0.000 description 7
- 239000003989 dielectric material Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 239000000203 mixture Substances 0.000 description 4
- 238000007792 addition Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000012809 cooling fluid Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005686 electrostatic field Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/104,925 US8900403B2 (en) | 2011-05-10 | 2011-05-10 | Semiconductor processing system having multiple decoupled plasma sources |
| US13/104,923 US8900402B2 (en) | 2011-05-10 | 2011-05-10 | Semiconductor processing system having multiple decoupled plasma sources |
| PCT/US2012/036762 WO2012154666A1 (en) | 2011-05-10 | 2012-05-07 | Semiconductor processing system having multiple decoupled plasma sources |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG193614A1 true SG193614A1 (en) | 2013-10-30 |
Family
ID=48137596
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2013071824A SG193614A1 (en) | 2011-05-10 | 2012-05-07 | Semiconductor processing system having multiple decoupled plasma sources |
Country Status (4)
| Country | Link |
|---|---|
| KR (1) | KR101947844B1 (zh) |
| CN (1) | CN103748665B (zh) |
| SG (1) | SG193614A1 (zh) |
| TW (1) | TWI579911B (zh) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6584786B2 (ja) * | 2015-02-13 | 2019-10-02 | 株式会社日立ハイテクノロジーズ | プラズマイオン源および荷電粒子ビーム装置 |
| US20170092470A1 (en) * | 2015-09-28 | 2017-03-30 | Applied Materials, Inc. | Plasma reactor for processing a workpiece with an array of plasma point sources |
| US11948783B2 (en) | 2016-11-15 | 2024-04-02 | Applied Materials, Inc. | Dynamic phased array plasma source for complete plasma coverage of a moving substrate |
| CN108668422B (zh) * | 2017-03-30 | 2021-06-08 | 北京北方华创微电子装备有限公司 | 一种等离子体产生腔室和等离子体处理装置 |
| US11749504B2 (en) * | 2018-02-28 | 2023-09-05 | Applied Materials, Inc. | Methods and apparatus for common excitation of frequency generators |
| ES2861810T3 (es) * | 2019-01-25 | 2021-10-06 | Ining S R O | Dispositivo de gasificación y obturador de plasma con sistema de ralentización del dispositivo de gasificación |
| KR102610445B1 (ko) * | 2020-12-08 | 2023-12-05 | 세메스 주식회사 | 플라즈마를 이용한 기판 처리 장치 및 방법 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6017221A (en) * | 1995-12-04 | 2000-01-25 | Flamm; Daniel L. | Process depending on plasma discharges sustained by inductive coupling |
| JP5165825B2 (ja) * | 2000-01-10 | 2013-03-21 | 東京エレクトロン株式会社 | 分割された電極集合体並びにプラズマ処理方法。 |
| US6777352B2 (en) * | 2002-02-11 | 2004-08-17 | Applied Materials, Inc. | Variable flow deposition apparatus and method in semiconductor substrate processing |
| US9184043B2 (en) * | 2006-05-24 | 2015-11-10 | Lam Research Corporation | Edge electrodes with dielectric covers |
| US20070281105A1 (en) * | 2006-06-02 | 2007-12-06 | Nima Mokhlesi | Atomic Layer Deposition of Oxides Using Krypton as an Ion Generating Feeding Gas |
| JP4900956B2 (ja) * | 2007-06-25 | 2012-03-21 | 東京エレクトロン株式会社 | ガス供給機構及び基板処理装置 |
| US8202393B2 (en) * | 2007-08-29 | 2012-06-19 | Lam Research Corporation | Alternate gas delivery and evacuation system for plasma processing apparatuses |
| JP4585574B2 (ja) * | 2008-02-26 | 2010-11-24 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理方法 |
| JP5309161B2 (ja) * | 2009-01-14 | 2013-10-09 | 株式会社アルバック | プラズマｃｖｄ装置 |
| US10049859B2 (en) * | 2009-07-08 | 2018-08-14 | Aixtron Se | Plasma generating units for processing a substrate |
-
2012
- 2012-05-07 SG SG2013071824A patent/SG193614A1/en unknown
- 2012-05-07 CN CN201280022675.5A patent/CN103748665B/zh active Active
- 2012-05-07 KR KR1020137032848A patent/KR101947844B1/ko active IP Right Grant
- 2012-05-10 TW TW101116685A patent/TWI579911B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| KR20140036224A (ko) | 2014-03-25 |
| TWI579911B (zh) | 2017-04-21 |
| CN103748665B (zh) | 2016-11-02 |
| KR101947844B1 (ko) | 2019-02-13 |
| TW201301388A (zh) | 2013-01-01 |
| CN103748665A (zh) | 2014-04-23 |
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