KR101929072B1 - 종료점 검출을 위한 스펙트럼 피쳐의 적응적 추적 - Google Patents
종료점 검출을 위한 스펙트럼 피쳐의 적응적 추적 Download PDFInfo
- Publication number
- KR101929072B1 KR101929072B1 KR1020137030560A KR20137030560A KR101929072B1 KR 101929072 B1 KR101929072 B1 KR 101929072B1 KR 1020137030560 A KR1020137030560 A KR 1020137030560A KR 20137030560 A KR20137030560 A KR 20137030560A KR 101929072 B1 KR101929072 B1 KR 101929072B1
- Authority
- KR
- South Korea
- Prior art keywords
- polishing
- substrate
- sequence
- layer
- values
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
- H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
- H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/090,972 | 2011-04-20 | ||
| US13/090,972 US8751033B2 (en) | 2008-11-14 | 2011-04-20 | Adaptive tracking spectrum features for endpoint detection |
| PCT/US2012/033969 WO2012145336A2 (en) | 2011-04-20 | 2012-04-17 | Adaptively tracking spectrum features for endpoint detection |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20140025471A KR20140025471A (ko) | 2014-03-04 |
| KR101929072B1 true KR101929072B1 (ko) | 2018-12-13 |
Family
ID=47042130
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020137030560A Active KR101929072B1 (ko) | 2011-04-20 | 2012-04-17 | 종료점 검출을 위한 스펙트럼 피쳐의 적응적 추적 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8751033B2 (https=) |
| JP (1) | JP6030122B2 (https=) |
| KR (1) | KR101929072B1 (https=) |
| WO (1) | WO2012145336A2 (https=) |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8292693B2 (en) * | 2008-11-26 | 2012-10-23 | Applied Materials, Inc. | Using optical metrology for wafer to wafer feed back process control |
| US20120034844A1 (en) * | 2010-08-05 | 2012-02-09 | Applied Materials, Inc. | Spectrographic monitoring using index tracking after detection of layer clearing |
| US8694144B2 (en) | 2010-08-30 | 2014-04-08 | Applied Materials, Inc. | Endpoint control of multiple substrates of varying thickness on the same platen in chemical mechanical polishing |
| US9358660B2 (en) * | 2011-11-07 | 2016-06-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Grinding wheel design with elongated teeth arrangement |
| US9960088B2 (en) | 2011-11-07 | 2018-05-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | End point detection in grinding |
| US9168630B2 (en) * | 2012-04-23 | 2015-10-27 | Applied Materials, Inc. | User-input functions for data sequences in polishing endpoint detection |
| US8563335B1 (en) | 2012-04-23 | 2013-10-22 | Applied Materials, Inc. | Method of controlling polishing using in-situ optical monitoring and fourier transform |
| US9011202B2 (en) | 2012-04-25 | 2015-04-21 | Applied Materials, Inc. | Fitting of optical model with diffraction effects to measured spectrum |
| US9289875B2 (en) | 2012-04-25 | 2016-03-22 | Applied Materials, Inc. | Feed forward and feed-back techniques for in-situ process control |
| US9296084B2 (en) * | 2012-07-19 | 2016-03-29 | Applied Materials, Inc. | Polishing control using weighting with default sequence |
| US20140030956A1 (en) * | 2012-07-25 | 2014-01-30 | Jimin Zhang | Control of polishing of multiple substrates on the same platen in chemical mechanical polishing |
| US9221147B2 (en) * | 2012-10-23 | 2015-12-29 | Applied Materials, Inc. | Endpointing with selective spectral monitoring |
| US9482610B2 (en) * | 2012-11-12 | 2016-11-01 | Applied Materials, Inc. | Techniques for matching spectra |
| US20140141696A1 (en) | 2012-11-21 | 2014-05-22 | Applied Materials, Inc. | Polishing System with In-Sequence Sensor |
| US8992286B2 (en) | 2013-02-26 | 2015-03-31 | Applied Materials, Inc. | Weighted regression of thickness maps from spectral data |
| US9056383B2 (en) * | 2013-02-26 | 2015-06-16 | Applied Materials, Inc. | Path for probe of spectrographic metrology system |
| TWI675721B (zh) * | 2013-07-11 | 2019-11-01 | 日商荏原製作所股份有限公司 | 研磨裝置及研磨狀態監視方法 |
| JP6275421B2 (ja) * | 2013-09-06 | 2018-02-07 | 株式会社荏原製作所 | 研磨方法および研磨装置 |
| US9375824B2 (en) | 2013-11-27 | 2016-06-28 | Applied Materials, Inc. | Adjustment of polishing rates during substrate polishing with predictive filters |
| US9490186B2 (en) | 2013-11-27 | 2016-11-08 | Applied Materials, Inc. | Limiting adjustment of polishing rates during substrate polishing |
| US9352440B2 (en) * | 2014-04-30 | 2016-05-31 | Applied Materials, Inc. | Serial feature tracking for endpoint detection |
| KR102534756B1 (ko) * | 2014-07-16 | 2023-05-18 | 어플라이드 머티어리얼스, 인코포레이티드 | 증착 이전에 측정이 이루어지는 폴리싱 |
| TWI807987B (zh) | 2016-11-30 | 2023-07-01 | 美商應用材料股份有限公司 | 使用神經網路的光譜監測 |
| JP7023063B2 (ja) * | 2017-08-08 | 2022-02-21 | 株式会社荏原製作所 | 基板研磨装置及び方法 |
| TWI828706B (zh) * | 2018-06-20 | 2024-01-11 | 美商應用材料股份有限公司 | 用於原位電磁感應監控的基板摻雜補償的方法、電腦程式產品及研磨系統 |
| TWI848121B (zh) * | 2019-06-10 | 2024-07-11 | 日商東京威力科創股份有限公司 | 基板處理裝置、基板檢查方法及記錄媒體 |
| JP7536039B2 (ja) * | 2019-12-13 | 2024-08-19 | 株式会社荏原製作所 | 基板洗浄装置、研磨装置、バフ処理装置、基板洗浄方法、基板処理装置、および機械学習器 |
| JP7671297B2 (ja) | 2020-06-24 | 2025-05-01 | アプライド マテリアルズ インコーポレイテッド | 圧電圧力制御によるキャリアヘッドの研磨 |
| US11794302B2 (en) | 2020-12-15 | 2023-10-24 | Applied Materials, Inc. | Compensation for slurry composition in in-situ electromagnetic inductive monitoring |
| JP7585357B2 (ja) * | 2021-03-03 | 2024-11-18 | アプライド マテリアルズ インコーポレイテッド | 分光モニタリング用の機械学習システム向けにトレーニングスペクトルにラベル付けするためのインシトゥモニタリング |
| US11919121B2 (en) | 2021-03-05 | 2024-03-05 | Applied Materials, Inc. | Control of processing parameters during substrate polishing using constrained cost function |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006186131A (ja) * | 2004-12-28 | 2006-07-13 | Renesas Technology Corp | 化学的機械的研磨方法 |
| JP2007220842A (ja) * | 2006-02-16 | 2007-08-30 | Renesas Technology Corp | 半導体装置の製造方法、ウェハの研磨方法、および電極間隔の設定方法 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB8511835D0 (en) * | 1985-05-10 | 1985-06-19 | British Telecomm | Adaptive digital filter |
| US5559428A (en) * | 1995-04-10 | 1996-09-24 | International Business Machines Corporation | In-situ monitoring of the change in thickness of films |
| US6361646B1 (en) | 1998-06-08 | 2002-03-26 | Speedfam-Ipec Corporation | Method and apparatus for endpoint detection for chemical mechanical polishing |
| US6503767B2 (en) | 2000-12-19 | 2003-01-07 | Speedfam-Ipec Corporation | Process for monitoring a process, planarizing a surface, and for quantifying the results of a planarization process |
| JP2002359217A (ja) * | 2001-05-31 | 2002-12-13 | Omron Corp | 研磨終点検出方法およびその装置 |
| US7160739B2 (en) * | 2001-06-19 | 2007-01-09 | Applied Materials, Inc. | Feedback control of a chemical mechanical polishing device providing manipulation of removal rate profiles |
| US6431953B1 (en) | 2001-08-21 | 2002-08-13 | Cabot Microelectronics Corporation | CMP process involving frequency analysis-based monitoring |
| US6609086B1 (en) * | 2002-02-12 | 2003-08-19 | Timbre Technologies, Inc. | Profile refinement for integrated circuit metrology |
| JP2005159203A (ja) * | 2003-11-28 | 2005-06-16 | Hitachi Ltd | 膜厚計測方法及びその装置、研磨レート算出方法並びにcmp加工方法及びその装置 |
| JP4581427B2 (ja) * | 2004-02-27 | 2010-11-17 | 富士電機システムズ株式会社 | 膜厚評価方法、研磨終点検出方法 |
| JP2006286766A (ja) * | 2005-03-31 | 2006-10-19 | Nec Electronics Corp | 化学的機械的研磨方法及び化学的機械的研磨システム |
| US8392012B2 (en) | 2008-10-27 | 2013-03-05 | Applied Materials, Inc. | Multiple libraries for spectrographic monitoring of zones of a substrate during processing |
| WO2007024807A2 (en) * | 2005-08-22 | 2007-03-01 | Applied Materials, Inc. | Apparatus and methods for spectrum based monitoring of chemical mechanical polishing |
| US7409260B2 (en) | 2005-08-22 | 2008-08-05 | Applied Materials, Inc. | Substrate thickness measuring during polishing |
| EP1940536B1 (en) * | 2005-10-25 | 2012-05-02 | Waters Technologies Corporation | Baseline modeling in chromatography |
| JP5006883B2 (ja) * | 2006-10-06 | 2012-08-22 | 株式会社荏原製作所 | 加工終点検知方法および加工装置 |
| JP5367246B2 (ja) * | 2007-09-28 | 2013-12-11 | Sumco Techxiv株式会社 | 半導体ウェーハの研磨装置及び研磨方法 |
| KR101834944B1 (ko) * | 2008-09-04 | 2018-03-06 | 어플라이드 머티어리얼스, 인코포레이티드 | 프로세싱 동안 기판의 분광 모니터링의 이용에 의한 연마 속도들의 조정 |
| JP5774482B2 (ja) * | 2008-10-27 | 2015-09-09 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 処理中の基板の分光モニタリングにおける適合度 |
| US20100103422A1 (en) * | 2008-10-27 | 2010-04-29 | Applied Materials, Inc. | Goodness of fit in spectrographic monitoring of a substrate during processing |
| US8352061B2 (en) * | 2008-11-14 | 2013-01-08 | Applied Materials, Inc. | Semi-quantitative thickness determination |
-
2011
- 2011-04-20 US US13/090,972 patent/US8751033B2/en not_active Expired - Fee Related
-
2012
- 2012-04-17 JP JP2014506491A patent/JP6030122B2/ja active Active
- 2012-04-17 KR KR1020137030560A patent/KR101929072B1/ko active Active
- 2012-04-17 WO PCT/US2012/033969 patent/WO2012145336A2/en not_active Ceased
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006186131A (ja) * | 2004-12-28 | 2006-07-13 | Renesas Technology Corp | 化学的機械的研磨方法 |
| JP2007220842A (ja) * | 2006-02-16 | 2007-08-30 | Renesas Technology Corp | 半導体装置の製造方法、ウェハの研磨方法、および電極間隔の設定方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2012145336A2 (en) | 2012-10-26 |
| JP6030122B2 (ja) | 2016-11-24 |
| WO2012145336A3 (en) | 2013-03-14 |
| US20110256805A1 (en) | 2011-10-20 |
| KR20140025471A (ko) | 2014-03-04 |
| JP2014512690A (ja) | 2014-05-22 |
| US8751033B2 (en) | 2014-06-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
St.27 status event code: A-0-1-A10-A15-nap-PA0105 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
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| A201 | Request for examination | ||
| PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
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| D14-X000 | Search report completed |
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| E902 | Notification of reason for refusal | ||
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| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
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| P13-X000 | Application amended |
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| E701 | Decision to grant or registration of patent right | ||
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