KR101913020B1 - 광학 부품 및/또는 웨이퍼의 미리 정해진 3차원 윤곽을 생성하는 방법 및 장치 - Google Patents

광학 부품 및/또는 웨이퍼의 미리 정해진 3차원 윤곽을 생성하는 방법 및 장치 Download PDF

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KR101913020B1
KR101913020B1 KR1020167028830A KR20167028830A KR101913020B1 KR 101913020 B1 KR101913020 B1 KR 101913020B1 KR 1020167028830 A KR1020167028830 A KR 1020167028830A KR 20167028830 A KR20167028830 A KR 20167028830A KR 101913020 B1 KR101913020 B1 KR 101913020B1
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wafer
optical component
dimensional
laser
predetermined
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KR20160134783A (ko
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블라디미르 드미트리브
번드 게
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칼 짜이스 에스엠에스 엘티디
칼 짜이스 에스엠티 게엠베하
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure
    • H01L22/12—
    • H01L22/20—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
KR1020167028830A 2014-03-25 2015-03-24 광학 부품 및/또는 웨이퍼의 미리 정해진 3차원 윤곽을 생성하는 방법 및 장치 Active KR101913020B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201461970289P 2014-03-25 2014-03-25
US61/970,289 2014-03-25
PCT/EP2015/056250 WO2015144700A2 (en) 2014-03-25 2015-03-24 Method and apparatus for generating a predetermined three-dimensional contour of an optical component and/or a wafer

Publications (2)

Publication Number Publication Date
KR20160134783A KR20160134783A (ko) 2016-11-23
KR101913020B1 true KR101913020B1 (ko) 2018-10-29

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Country Status (4)

Country Link
US (1) US10353295B2 (https=)
JP (1) JP6554483B2 (https=)
KR (1) KR101913020B1 (https=)
WO (1) WO2015144700A2 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210124399A (ko) * 2019-02-06 2021-10-14 칼 짜이스 에스엠티 게엠베하 반사 포토리소그래피 마스크의 패턴 요소의 작동 환경에서의 배치를 결정하기 위한 장치 및 방법
US11295970B2 (en) 2019-07-23 2022-04-05 SK Hynix Inc. System and method for analyzing a semiconductor device

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015184162A1 (en) * 2014-05-29 2015-12-03 Brown University Optical system and methods for the determination of stress in a substrate
WO2017202665A1 (en) * 2016-05-25 2017-11-30 Asml Netherlands B.V. Focus and overlay improvement by modifying a patterning device
DE102016224690B4 (de) 2016-12-12 2020-07-23 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zum Untersuchen eines Elements einer photolithographischen Maske für den EUV-Bereich
DE102017205629B4 (de) 2017-04-03 2024-10-31 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zum Reparieren von Defekten einer photolithographischen Maske für den EUV-Bereich
DE102017215995B4 (de) * 2017-09-11 2021-05-12 Carl Zeiss Smt Gmbh Verfahren zur Untersuchung von photolithographischen Masken
EP3486721A1 (en) * 2017-11-17 2019-05-22 IMEC vzw Mask for extreme-uv lithography and method for manufacturing the same
KR102637162B1 (ko) * 2018-06-12 2024-02-16 도쿄엘렉트론가부시키가이샤 기판 처리 방법, 개질 장치 및 기판 처리 시스템
CN109859137B (zh) * 2019-02-14 2023-02-17 重庆邮电大学 一种广角相机非规则畸变全域校正方法
US11393118B2 (en) 2019-06-18 2022-07-19 Kla Corporation Metrics for asymmetric wafer shape characterization
KR102905849B1 (ko) 2020-01-22 2025-12-31 삼성전자주식회사 레이저 빔을 이용하여 반사형 포토마스크를 어닐링하는 방법
DE102020201482B4 (de) 2020-02-06 2024-06-27 Carl Zeiss Smt Gmbh Vorrichtung und Verfahren zum Reparieren eines Defekts einer optischen Komponente für den extrem ultravioletten Wellenlängenbereich
JP7574767B2 (ja) * 2020-10-30 2024-10-29 Ａｇｃ株式会社 Ｅｕｖｌ用ガラス基板、及びｅｕｖｌ用マスクブランク
JP7574766B2 (ja) * 2020-10-30 2024-10-29 Ａｇｃ株式会社 Ｅｕｖｌ用ガラス基板、及びｅｕｖｌ用マスクブランク
EP4302156A1 (en) 2021-03-01 2024-01-10 Carl Zeiss SMS Ltd. Method and apparatus for optimizing a defect correction for an optical element used in a lithographic process
US20220336226A1 (en) * 2021-04-15 2022-10-20 Tokyo Electron Limited Method of correcting wafer bow using a direct write stress film
KR20240036734A (ko) * 2021-08-27 2024-03-20 에이지씨 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법
US11852978B2 (en) 2022-03-07 2023-12-26 Taiwan Semiconductor Manufacturing Company, Ltd. EUV lithography system with 3D sensing and tunning modules
JP7694474B2 (ja) * 2022-06-23 2025-06-18 信越化学工業株式会社 マスクブランクス用基板及びその製造方法
EP4418304A1 (en) 2023-02-17 2024-08-21 Carl Zeiss SMS Ltd. Wafer conditioning
EP4471499A1 (en) 2023-06-02 2024-12-04 Carl Zeiss SMS Ltd. Ml reflectivity modification
CN117878018A (zh) * 2024-01-12 2024-04-12 西安奕斯伟材料科技股份有限公司 一种调节工艺参数的方法、装置及介质
DE102024102631A1 (de) * 2024-01-30 2025-07-31 TRUMPF Lasersystems for Semiconductor Manufacturing SE Verfahren und laserbearbeitungsanlage zur laserbasierten oberflächenformkorrektur eines spiegels
EP4664507A1 (en) 2024-06-11 2025-12-17 Carl Zeiss SMS Ltd. Wafer and die shape control
WO2025258933A1 (ko) * 2024-06-12 2025-12-18 주식회사 아이엠티 휨에 강한 반도체 웨이퍼 및 그 제조 방법
DE102024124298B3 (de) 2024-08-26 2025-12-31 Carl Zeiss Sms Ltd. Objektiv und Verfahren zum Fokussieren mehrerer Teilstrahlen in mehrere Eindringtiefen einer Probe
KR102933135B1 (ko) 2025-04-30 2026-03-04 주식회사 블루타일랩 링 형태의 빔을 이용한 웨이퍼 워피지 검사 장치 및 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070224522A1 (en) * 2006-03-21 2007-09-27 Myoung-Soo Lee Substrate including deformed portions and method of adjusting a curvature of a substrate
US20120009511A1 (en) 2010-07-12 2012-01-12 Carl Zeiss Sms Ltd. Method and apparatus for correcting errors of a photolithographic mask
JP2012088712A (ja) * 2010-10-04 2012-05-10 Carl Zeiss Sms Ltd レーザ補正ツールパラメータを決定する方法及び装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100791338B1 (ko) 2006-08-07 2008-01-03 삼성전자주식회사 레지스트레이션이 보정된 포토마스크 및 포토마스크의레지스트레이션 보정 방법
JP2008096741A (ja) * 2006-10-12 2008-04-24 Toshiba Corp マスク、マスクの製造方法及び半導体装置の製造方法
JP4909913B2 (ja) * 2008-01-10 2012-04-04 株式会社東芝 インプリントマスクの製造方法および半導体装置の製造方法
JP2010044287A (ja) * 2008-08-15 2010-02-25 Renesas Technology Corp フォトマスクの製造方法
US8735030B2 (en) * 2010-04-15 2014-05-27 Carl Zeiss Smt Gmbh Method and apparatus for modifying a substrate surface of a photolithographic mask
WO2012103933A1 (en) * 2011-02-01 2012-08-09 Carl Zeiss Smt Gmbh Method and apparatus for correcting errors in an euv lithography system
WO2013030820A1 (en) * 2011-08-26 2013-03-07 Carl Zeiss Sms Ltd. Method and apparatus for locally deforming an optical element for photolithography

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070224522A1 (en) * 2006-03-21 2007-09-27 Myoung-Soo Lee Substrate including deformed portions and method of adjusting a curvature of a substrate
US20120009511A1 (en) 2010-07-12 2012-01-12 Carl Zeiss Sms Ltd. Method and apparatus for correcting errors of a photolithographic mask
JP2012088712A (ja) * 2010-10-04 2012-05-10 Carl Zeiss Sms Ltd レーザ補正ツールパラメータを決定する方法及び装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210124399A (ko) * 2019-02-06 2021-10-14 칼 짜이스 에스엠티 게엠베하 반사 포토리소그래피 마스크의 패턴 요소의 작동 환경에서의 배치를 결정하기 위한 장치 및 방법
KR102795464B1 (ko) 2019-02-06 2025-04-15 칼 짜이스 에스엠티 게엠베하 반사 포토리소그래피 마스크의 패턴 요소의 작동 환경에서의 배치를 결정하기 위한 장치 및 방법
US12321091B2 (en) 2019-02-06 2025-06-03 Carl Zeiss Smt Gmbh Device and method for determining placements of pattern elements of a reflective photolithographic mask in the operating environment thereof
US11295970B2 (en) 2019-07-23 2022-04-05 SK Hynix Inc. System and method for analyzing a semiconductor device
US11626306B2 (en) 2019-07-23 2023-04-11 SK Hynix Inc. Method for analyzing a semiconductor device

Also Published As

Publication number Publication date
JP6554483B2 (ja) 2019-07-31
KR20160134783A (ko) 2016-11-23
JP2017517759A (ja) 2017-06-29
WO2015144700A2 (en) 2015-10-01
US20170010540A1 (en) 2017-01-12
US10353295B2 (en) 2019-07-16
WO2015144700A3 (en) 2015-11-12

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