JP6554483B2 - 光学構成要素及び/又はウェーハの予め決められた3次元輪郭を発生させる方法及び装置 - Google Patents
光学構成要素及び/又はウェーハの予め決められた3次元輪郭を発生させる方法及び装置 Download PDFInfo
- Publication number
- JP6554483B2 JP6554483B2 JP2016559363A JP2016559363A JP6554483B2 JP 6554483 B2 JP6554483 B2 JP 6554483B2 JP 2016559363 A JP2016559363 A JP 2016559363A JP 2016559363 A JP2016559363 A JP 2016559363A JP 6554483 B2 JP6554483 B2 JP 6554483B2
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- JP
- Japan
- Prior art keywords
- wafer
- optical component
- dimensional
- predetermined
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/60—Substrates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
- G21K1/062—Devices having a multilayer structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
- H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201461970289P | 2014-03-25 | 2014-03-25 | |
| US61/970,289 | 2014-03-25 | ||
| PCT/EP2015/056250 WO2015144700A2 (en) | 2014-03-25 | 2015-03-24 | Method and apparatus for generating a predetermined three-dimensional contour of an optical component and/or a wafer |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017517759A JP2017517759A (ja) | 2017-06-29 |
| JP2017517759A5 JP2017517759A5 (https=) | 2018-06-14 |
| JP6554483B2 true JP6554483B2 (ja) | 2019-07-31 |
Family
ID=53724226
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016559363A Active JP6554483B2 (ja) | 2014-03-25 | 2015-03-24 | 光学構成要素及び/又はウェーハの予め決められた3次元輪郭を発生させる方法及び装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US10353295B2 (https=) |
| JP (1) | JP6554483B2 (https=) |
| KR (1) | KR101913020B1 (https=) |
| WO (1) | WO2015144700A2 (https=) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015184162A1 (en) * | 2014-05-29 | 2015-12-03 | Brown University | Optical system and methods for the determination of stress in a substrate |
| WO2017202665A1 (en) * | 2016-05-25 | 2017-11-30 | Asml Netherlands B.V. | Focus and overlay improvement by modifying a patterning device |
| DE102016224690B4 (de) | 2016-12-12 | 2020-07-23 | Carl Zeiss Smt Gmbh | Verfahren und Vorrichtung zum Untersuchen eines Elements einer photolithographischen Maske für den EUV-Bereich |
| DE102017205629B4 (de) | 2017-04-03 | 2024-10-31 | Carl Zeiss Smt Gmbh | Verfahren und Vorrichtung zum Reparieren von Defekten einer photolithographischen Maske für den EUV-Bereich |
| DE102017215995B4 (de) * | 2017-09-11 | 2021-05-12 | Carl Zeiss Smt Gmbh | Verfahren zur Untersuchung von photolithographischen Masken |
| EP3486721A1 (en) * | 2017-11-17 | 2019-05-22 | IMEC vzw | Mask for extreme-uv lithography and method for manufacturing the same |
| KR102637162B1 (ko) * | 2018-06-12 | 2024-02-16 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 방법, 개질 장치 및 기판 처리 시스템 |
| DE102019201497B3 (de) * | 2019-02-06 | 2020-06-18 | Carl Zeiss Smt Gmbh | Vorrichtung und Verfahren zum Bestimmen von Platzierungen von Pattern-Elementen einer reflektiven fotolithographischen Maske in deren Betriebsumgebung |
| CN109859137B (zh) * | 2019-02-14 | 2023-02-17 | 重庆邮电大学 | 一种广角相机非规则畸变全域校正方法 |
| US11393118B2 (en) | 2019-06-18 | 2022-07-19 | Kla Corporation | Metrics for asymmetric wafer shape characterization |
| KR102705854B1 (ko) | 2019-07-23 | 2024-09-11 | 에스케이하이닉스 주식회사 | 반도체 소자의 분석 시스템 및 방법 |
| KR102905849B1 (ko) | 2020-01-22 | 2025-12-31 | 삼성전자주식회사 | 레이저 빔을 이용하여 반사형 포토마스크를 어닐링하는 방법 |
| DE102020201482B4 (de) | 2020-02-06 | 2024-06-27 | Carl Zeiss Smt Gmbh | Vorrichtung und Verfahren zum Reparieren eines Defekts einer optischen Komponente für den extrem ultravioletten Wellenlängenbereich |
| JP7574767B2 (ja) * | 2020-10-30 | 2024-10-29 | Agc株式会社 | Euvl用ガラス基板、及びeuvl用マスクブランク |
| JP7574766B2 (ja) * | 2020-10-30 | 2024-10-29 | Agc株式会社 | Euvl用ガラス基板、及びeuvl用マスクブランク |
| EP4302156A1 (en) | 2021-03-01 | 2024-01-10 | Carl Zeiss SMS Ltd. | Method and apparatus for optimizing a defect correction for an optical element used in a lithographic process |
| US20220336226A1 (en) * | 2021-04-15 | 2022-10-20 | Tokyo Electron Limited | Method of correcting wafer bow using a direct write stress film |
| KR20240036734A (ko) * | 2021-08-27 | 2024-03-20 | 에이지씨 가부시키가이샤 | 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법 |
| US11852978B2 (en) | 2022-03-07 | 2023-12-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | EUV lithography system with 3D sensing and tunning modules |
| JP7694474B2 (ja) * | 2022-06-23 | 2025-06-18 | 信越化学工業株式会社 | マスクブランクス用基板及びその製造方法 |
| EP4418304A1 (en) | 2023-02-17 | 2024-08-21 | Carl Zeiss SMS Ltd. | Wafer conditioning |
| EP4471499A1 (en) | 2023-06-02 | 2024-12-04 | Carl Zeiss SMS Ltd. | Ml reflectivity modification |
| CN117878018A (zh) * | 2024-01-12 | 2024-04-12 | 西安奕斯伟材料科技股份有限公司 | 一种调节工艺参数的方法、装置及介质 |
| DE102024102631A1 (de) * | 2024-01-30 | 2025-07-31 | TRUMPF Lasersystems for Semiconductor Manufacturing SE | Verfahren und laserbearbeitungsanlage zur laserbasierten oberflächenformkorrektur eines spiegels |
| EP4664507A1 (en) | 2024-06-11 | 2025-12-17 | Carl Zeiss SMS Ltd. | Wafer and die shape control |
| WO2025258933A1 (ko) * | 2024-06-12 | 2025-12-18 | 주식회사 아이엠티 | 휨에 강한 반도체 웨이퍼 및 그 제조 방법 |
| DE102024124298B3 (de) | 2024-08-26 | 2025-12-31 | Carl Zeiss Sms Ltd. | Objektiv und Verfahren zum Fokussieren mehrerer Teilstrahlen in mehrere Eindringtiefen einer Probe |
| KR102933135B1 (ko) | 2025-04-30 | 2026-03-04 | 주식회사 블루타일랩 | 링 형태의 빔을 이용한 웨이퍼 워피지 검사 장치 및 방법 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100735532B1 (ko) * | 2006-03-21 | 2007-07-04 | 삼성전자주식회사 | 기판 내에 팽창부를 포함하는 포토마스크 및 포토마스크의표면 평탄화 방법 |
| KR100791338B1 (ko) | 2006-08-07 | 2008-01-03 | 삼성전자주식회사 | 레지스트레이션이 보정된 포토마스크 및 포토마스크의레지스트레이션 보정 방법 |
| JP2008096741A (ja) * | 2006-10-12 | 2008-04-24 | Toshiba Corp | マスク、マスクの製造方法及び半導体装置の製造方法 |
| JP4909913B2 (ja) * | 2008-01-10 | 2012-04-04 | 株式会社東芝 | インプリントマスクの製造方法および半導体装置の製造方法 |
| JP2010044287A (ja) * | 2008-08-15 | 2010-02-25 | Renesas Technology Corp | フォトマスクの製造方法 |
| US8735030B2 (en) * | 2010-04-15 | 2014-05-27 | Carl Zeiss Smt Gmbh | Method and apparatus for modifying a substrate surface of a photolithographic mask |
| US9658527B2 (en) * | 2010-07-12 | 2017-05-23 | Carl Zeiss Sms Ltd. | Correction of errors of a photolithographic mask using a joint optimization process |
| DE102011083774B4 (de) | 2010-10-04 | 2019-06-13 | Carl Zeiss Sms Ltd. | Verfahren zum Bestimmen von Laser korrigierenden Tool-Parametern |
| WO2012103933A1 (en) * | 2011-02-01 | 2012-08-09 | Carl Zeiss Smt Gmbh | Method and apparatus for correcting errors in an euv lithography system |
| WO2013030820A1 (en) * | 2011-08-26 | 2013-03-07 | Carl Zeiss Sms Ltd. | Method and apparatus for locally deforming an optical element for photolithography |
-
2015
- 2015-03-24 WO PCT/EP2015/056250 patent/WO2015144700A2/en not_active Ceased
- 2015-03-24 JP JP2016559363A patent/JP6554483B2/ja active Active
- 2015-03-24 KR KR1020167028830A patent/KR101913020B1/ko active Active
-
2016
- 2016-09-22 US US15/272,936 patent/US10353295B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| KR20160134783A (ko) | 2016-11-23 |
| JP2017517759A (ja) | 2017-06-29 |
| WO2015144700A2 (en) | 2015-10-01 |
| KR101913020B1 (ko) | 2018-10-29 |
| US20170010540A1 (en) | 2017-01-12 |
| US10353295B2 (en) | 2019-07-16 |
| WO2015144700A3 (en) | 2015-11-12 |
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