KR101878194B1 - 작업물의 패턴화된 주입을 수행하기 위한 빔 블로커들 이용 - Google Patents

작업물의 패턴화된 주입을 수행하기 위한 빔 블로커들 이용 Download PDF

Info

Publication number
KR101878194B1
KR101878194B1 KR1020137008360A KR20137008360A KR101878194B1 KR 101878194 B1 KR101878194 B1 KR 101878194B1 KR 1020137008360 A KR1020137008360 A KR 1020137008360A KR 20137008360 A KR20137008360 A KR 20137008360A KR 101878194 B1 KR101878194 B1 KR 101878194B1
Authority
KR
South Korea
Prior art keywords
ion beam
dose
workpiece
regions
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020137008360A
Other languages
English (en)
Korean (ko)
Other versions
KR20130102575A (ko
Inventor
다니엘 디스타소
러셀 제이. 로우
Original Assignee
베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. filed Critical 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크.
Publication of KR20130102575A publication Critical patent/KR20130102575A/ko
Application granted granted Critical
Publication of KR101878194B1 publication Critical patent/KR101878194B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H01J37/3023—Programme control
    • H01J37/3026—Patterning strategy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31703—Dosimetry

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
KR1020137008360A 2010-09-08 2011-09-01 작업물의 패턴화된 주입을 수행하기 위한 빔 블로커들 이용 Active KR101878194B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/877,666 US8461556B2 (en) 2010-09-08 2010-09-08 Using beam blockers to perform a patterned implant of a workpiece
US12/877,666 2010-09-08
PCT/US2011/050156 WO2012033697A2 (en) 2010-09-08 2011-09-01 Using beam blockers to perform a patterned implant of a workpiece

Publications (2)

Publication Number Publication Date
KR20130102575A KR20130102575A (ko) 2013-09-17
KR101878194B1 true KR101878194B1 (ko) 2018-07-13

Family

ID=44774104

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020137008360A Active KR101878194B1 (ko) 2010-09-08 2011-09-01 작업물의 패턴화된 주입을 수행하기 위한 빔 블로커들 이용

Country Status (7)

Country Link
US (1) US8461556B2 (enExample)
EP (1) EP2614516A2 (enExample)
JP (1) JP5791722B2 (enExample)
KR (1) KR101878194B1 (enExample)
CN (1) CN103229270B (enExample)
TW (1) TWI521569B (enExample)
WO (1) WO2012033697A2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8461524B2 (en) * 2011-03-28 2013-06-11 Thermo Finnigan Llc Ion guide with improved gas dynamics and combined noise reduction device
US9070534B2 (en) * 2012-05-04 2015-06-30 Taiwan Semiconductor Manufacturing Co., Ltd. Ion beam dimension control for ion implantation process and apparatus, and advanced process control
JP5863153B2 (ja) * 2012-10-29 2016-02-16 日新イオン機器株式会社 イオン注入装置
US8884244B1 (en) * 2013-10-22 2014-11-11 Varian Semiconductor Equipment Associates, Inc. Dual mode ion implanter
US9269538B2 (en) * 2014-03-21 2016-02-23 Varian Semiconductor Equipment Associates, Inc. Ion beam uniformity control using ion beam blockers
US10377665B2 (en) * 2015-11-19 2019-08-13 Varian Semiconductor Equipment Associates, Inc. Modifying bulk properties of a glass substrate
DE102016106119B4 (de) * 2016-04-04 2019-03-07 mi2-factory GmbH Energiefilterelement für Ionenimplantationsanlagen für den Einsatz in der Produktion von Wafern

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63136618A (ja) * 1986-11-28 1988-06-08 Sony Corp エネルギ−照射方法
JP2007172927A (ja) * 2005-12-20 2007-07-05 Nissin Ion Equipment Co Ltd イオンビーム照射装置およびビーム均一性調整方法
KR20080101867A (ko) * 2006-02-16 2008-11-21 가부시키가이샤 니콘 투영 광학계, 노광 장치, 노광 방법, 디스플레이의 제조방법, 마스크 및 마스크의 제조 방법
US20100124799A1 (en) * 2008-11-20 2010-05-20 Varian Semiconductor Equipment Associates, Inc. Technique for manufacturing a solar cell

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2648642B2 (ja) * 1990-04-17 1997-09-03 アプライド マテリアルズ インコーポレイテッド 巾広ビームでイオンインプランテーションを行なう方法及び装置
US5350926A (en) 1993-03-11 1994-09-27 Diamond Semiconductor Group, Inc. Compact high current broad beam ion implanter
JP2003249189A (ja) 2002-02-26 2003-09-05 Hitoshi Mikami イオン注入法
JP4901203B2 (ja) 2005-12-12 2012-03-21 東芝モバイルディスプレイ株式会社 イオンビームの照射方法及び薄膜トランジスタをもつ基板の製造装置
JP2008112840A (ja) 2006-10-30 2008-05-15 Shin Etsu Chem Co Ltd 単結晶シリコン太陽電池の製造方法及び単結晶シリコン太陽電池
US20090317937A1 (en) 2008-06-20 2009-12-24 Atul Gupta Maskless Doping Technique for Solar Cells
US7767986B2 (en) 2008-06-20 2010-08-03 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for controlling beam current uniformity in an ion implanter
US8900982B2 (en) 2009-04-08 2014-12-02 Varian Semiconductor Equipment Associates, Inc. Techniques for processing a substrate
US9076914B2 (en) * 2009-04-08 2015-07-07 Varian Semiconductor Equipment Associates, Inc. Techniques for processing a substrate
US9006688B2 (en) 2009-04-08 2015-04-14 Varian Semiconductor Equipment Associates, Inc. Techniques for processing a substrate using a mask
US8049192B2 (en) * 2009-12-24 2011-11-01 Varian Semiconductor Equipment Associates, Inc. Apparatus and system for controlling ion ribbon beam uniformity in an ion implanter
SG183267A1 (en) 2010-02-09 2012-09-27 Intevac Inc An adjustable shadow mask assembly for use in solar cell fabrications

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63136618A (ja) * 1986-11-28 1988-06-08 Sony Corp エネルギ−照射方法
JP2007172927A (ja) * 2005-12-20 2007-07-05 Nissin Ion Equipment Co Ltd イオンビーム照射装置およびビーム均一性調整方法
KR20080101867A (ko) * 2006-02-16 2008-11-21 가부시키가이샤 니콘 투영 광학계, 노광 장치, 노광 방법, 디스플레이의 제조방법, 마스크 및 마스크의 제조 방법
US20100124799A1 (en) * 2008-11-20 2010-05-20 Varian Semiconductor Equipment Associates, Inc. Technique for manufacturing a solar cell

Also Published As

Publication number Publication date
JP2013541839A (ja) 2013-11-14
WO2012033697A3 (en) 2012-07-26
CN103229270A (zh) 2013-07-31
JP5791722B2 (ja) 2015-10-07
TWI521569B (zh) 2016-02-11
CN103229270B (zh) 2016-01-13
TW201220368A (en) 2012-05-16
WO2012033697A2 (en) 2012-03-15
EP2614516A2 (en) 2013-07-17
US20120056110A1 (en) 2012-03-08
KR20130102575A (ko) 2013-09-17
US8461556B2 (en) 2013-06-11

Similar Documents

Publication Publication Date Title
KR101878194B1 (ko) 작업물의 패턴화된 주입을 수행하기 위한 빔 블로커들 이용
US8202789B2 (en) Implanting a solar cell substrate using a mask
US8008176B2 (en) Masked ion implant with fast-slow scan
US20100154870A1 (en) Use of Pattern Recognition to Align Patterns in a Downstream Process
KR101732446B1 (ko) 기판을 처리하기 위한 기술들
KR20160134649A (ko) 가변 에너지 제어를 갖는 이온 주입 시스템 및 방법
KR101607619B1 (ko) 기판을 처리하기 위한 기술들
KR101919514B1 (ko) 이면접합형 후방 접촉 솔라셀 및 기판을 프로세싱하기 위한 그 방법
JP5257576B2 (ja) イオンを加工物に注入するシステム及びその方法
US20120056107A1 (en) Uniformity control using ion beam blockers
US8604449B2 (en) Glitch control during implantation
US9269538B2 (en) Ion beam uniformity control using ion beam blockers
JP2015520941A5 (ja) 複数注入のために基板を位置合わせするための装置および方法
JP2015523696A (ja) イオンビームのグリッチ回復のためのビームライン電極の電圧変調
KR20150003879A (ko) 다수의 주입들을 위해 기판들을 정렬시키기 위한 시스템 및 방법
US8598547B2 (en) Handling beam glitches during ion implantation of workpieces
US20250166959A1 (en) High bandwidth variable dose ion implantation system and method
JP2024529935A (ja) 混合エネルギーイオン注入
US8183546B2 (en) Ion implantation through laser fields

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20130401

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20160818

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20171108

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20180501

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20180709

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20180710

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20210628

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20220627

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 20230622

Start annual number: 6

End annual number: 6

PR1001 Payment of annual fee

Payment date: 20240625

Start annual number: 7

End annual number: 7

PR1001 Payment of annual fee

Payment date: 20250630

Start annual number: 8

End annual number: 8