TWI521569B - 使用射束阻擋器執行工件的圖案化植入 - Google Patents
使用射束阻擋器執行工件的圖案化植入 Download PDFInfo
- Publication number
- TWI521569B TWI521569B TW100132260A TW100132260A TWI521569B TW I521569 B TWI521569 B TW I521569B TW 100132260 A TW100132260 A TW 100132260A TW 100132260 A TW100132260 A TW 100132260A TW I521569 B TWI521569 B TW I521569B
- Authority
- TW
- Taiwan
- Prior art keywords
- dose
- ion beam
- workpiece
- ion
- current
- Prior art date
Links
- 239000007943 implant Substances 0.000 title claims description 19
- 238000010884 ion-beam technique Methods 0.000 claims description 103
- 238000000034 method Methods 0.000 claims description 26
- 230000004888 barrier function Effects 0.000 claims description 24
- 238000005468 ion implantation Methods 0.000 claims description 21
- 230000000903 blocking effect Effects 0.000 claims description 13
- 238000002513 implantation Methods 0.000 claims description 12
- 150000002500 ions Chemical class 0.000 description 37
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 239000007789 gas Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/302—Controlling tubes by external information, e.g. programme control
- H01J37/3023—Programme control
- H01J37/3026—Patterning strategy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/302—Controlling tubes by external information, e.g. programme control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
- H01J2237/31703—Dosimetry
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Physical Vapour Deposition (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/877,666 US8461556B2 (en) | 2010-09-08 | 2010-09-08 | Using beam blockers to perform a patterned implant of a workpiece |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201220368A TW201220368A (en) | 2012-05-16 |
| TWI521569B true TWI521569B (zh) | 2016-02-11 |
Family
ID=44774104
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100132260A TWI521569B (zh) | 2010-09-08 | 2011-09-07 | 使用射束阻擋器執行工件的圖案化植入 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8461556B2 (enExample) |
| EP (1) | EP2614516A2 (enExample) |
| JP (1) | JP5791722B2 (enExample) |
| KR (1) | KR101878194B1 (enExample) |
| CN (1) | CN103229270B (enExample) |
| TW (1) | TWI521569B (enExample) |
| WO (1) | WO2012033697A2 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8461524B2 (en) * | 2011-03-28 | 2013-06-11 | Thermo Finnigan Llc | Ion guide with improved gas dynamics and combined noise reduction device |
| US9070534B2 (en) * | 2012-05-04 | 2015-06-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Ion beam dimension control for ion implantation process and apparatus, and advanced process control |
| JP5863153B2 (ja) * | 2012-10-29 | 2016-02-16 | 日新イオン機器株式会社 | イオン注入装置 |
| US8884244B1 (en) * | 2013-10-22 | 2014-11-11 | Varian Semiconductor Equipment Associates, Inc. | Dual mode ion implanter |
| US9269538B2 (en) * | 2014-03-21 | 2016-02-23 | Varian Semiconductor Equipment Associates, Inc. | Ion beam uniformity control using ion beam blockers |
| US10377665B2 (en) * | 2015-11-19 | 2019-08-13 | Varian Semiconductor Equipment Associates, Inc. | Modifying bulk properties of a glass substrate |
| DE102016106119B4 (de) * | 2016-04-04 | 2019-03-07 | mi2-factory GmbH | Energiefilterelement für Ionenimplantationsanlagen für den Einsatz in der Produktion von Wafern |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63136618A (ja) * | 1986-11-28 | 1988-06-08 | Sony Corp | エネルギ−照射方法 |
| JP2648642B2 (ja) * | 1990-04-17 | 1997-09-03 | アプライド マテリアルズ インコーポレイテッド | 巾広ビームでイオンインプランテーションを行なう方法及び装置 |
| US5350926A (en) | 1993-03-11 | 1994-09-27 | Diamond Semiconductor Group, Inc. | Compact high current broad beam ion implanter |
| JP2003249189A (ja) | 2002-02-26 | 2003-09-05 | Hitoshi Mikami | イオン注入法 |
| JP4901203B2 (ja) | 2005-12-12 | 2012-03-21 | 東芝モバイルディスプレイ株式会社 | イオンビームの照射方法及び薄膜トランジスタをもつ基板の製造装置 |
| JP4997756B2 (ja) * | 2005-12-20 | 2012-08-08 | 日新イオン機器株式会社 | イオンビーム照射装置およびビーム均一性調整方法 |
| KR101415411B1 (ko) * | 2006-02-16 | 2014-07-04 | 가부시키가이샤 니콘 | 투영 광학계, 노광 장치, 노광 방법, 디스플레이의 제조방법, 마스크 및 마스크의 제조 방법 |
| JP2008112840A (ja) | 2006-10-30 | 2008-05-15 | Shin Etsu Chem Co Ltd | 単結晶シリコン太陽電池の製造方法及び単結晶シリコン太陽電池 |
| US20090317937A1 (en) | 2008-06-20 | 2009-12-24 | Atul Gupta | Maskless Doping Technique for Solar Cells |
| US7767986B2 (en) | 2008-06-20 | 2010-08-03 | Varian Semiconductor Equipment Associates, Inc. | Method and apparatus for controlling beam current uniformity in an ion implanter |
| US7816239B2 (en) * | 2008-11-20 | 2010-10-19 | Varian Semiconductor Equipment Associates, Inc. | Technique for manufacturing a solar cell |
| US8900982B2 (en) | 2009-04-08 | 2014-12-02 | Varian Semiconductor Equipment Associates, Inc. | Techniques for processing a substrate |
| US9076914B2 (en) * | 2009-04-08 | 2015-07-07 | Varian Semiconductor Equipment Associates, Inc. | Techniques for processing a substrate |
| US9006688B2 (en) | 2009-04-08 | 2015-04-14 | Varian Semiconductor Equipment Associates, Inc. | Techniques for processing a substrate using a mask |
| US8049192B2 (en) * | 2009-12-24 | 2011-11-01 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and system for controlling ion ribbon beam uniformity in an ion implanter |
| SG183267A1 (en) | 2010-02-09 | 2012-09-27 | Intevac Inc | An adjustable shadow mask assembly for use in solar cell fabrications |
-
2010
- 2010-09-08 US US12/877,666 patent/US8461556B2/en active Active
-
2011
- 2011-09-01 EP EP11767492.9A patent/EP2614516A2/en not_active Withdrawn
- 2011-09-01 CN CN201180052954.1A patent/CN103229270B/zh active Active
- 2011-09-01 WO PCT/US2011/050156 patent/WO2012033697A2/en not_active Ceased
- 2011-09-01 KR KR1020137008360A patent/KR101878194B1/ko active Active
- 2011-09-01 JP JP2013528232A patent/JP5791722B2/ja active Active
- 2011-09-07 TW TW100132260A patent/TWI521569B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| KR101878194B1 (ko) | 2018-07-13 |
| JP2013541839A (ja) | 2013-11-14 |
| WO2012033697A3 (en) | 2012-07-26 |
| CN103229270A (zh) | 2013-07-31 |
| JP5791722B2 (ja) | 2015-10-07 |
| CN103229270B (zh) | 2016-01-13 |
| TW201220368A (en) | 2012-05-16 |
| WO2012033697A2 (en) | 2012-03-15 |
| EP2614516A2 (en) | 2013-07-17 |
| US20120056110A1 (en) | 2012-03-08 |
| KR20130102575A (ko) | 2013-09-17 |
| US8461556B2 (en) | 2013-06-11 |
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