CN103229270B - 离子植入的方法 - Google Patents

离子植入的方法 Download PDF

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Publication number
CN103229270B
CN103229270B CN201180052954.1A CN201180052954A CN103229270B CN 103229270 B CN103229270 B CN 103229270B CN 201180052954 A CN201180052954 A CN 201180052954A CN 103229270 B CN103229270 B CN 103229270B
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CN
China
Prior art keywords
ion beam
dosage
workpiece
stop
implanted ions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201180052954.1A
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English (en)
Chinese (zh)
Other versions
CN103229270A (zh
Inventor
丹尼尔·迪斯塔苏
罗素·J·洛
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Semiconductor Equipment Associates Inc
Original Assignee
Varian Semiconductor Equipment Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Semiconductor Equipment Associates Inc filed Critical Varian Semiconductor Equipment Associates Inc
Publication of CN103229270A publication Critical patent/CN103229270A/zh
Application granted granted Critical
Publication of CN103229270B publication Critical patent/CN103229270B/zh
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H01J37/3023—Programme control
    • H01J37/3026—Patterning strategy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31703—Dosimetry

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
CN201180052954.1A 2010-09-08 2011-09-01 离子植入的方法 Active CN103229270B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/877,666 US8461556B2 (en) 2010-09-08 2010-09-08 Using beam blockers to perform a patterned implant of a workpiece
US12/877,666 2010-09-08
PCT/US2011/050156 WO2012033697A2 (en) 2010-09-08 2011-09-01 Using beam blockers to perform a patterned implant of a workpiece

Publications (2)

Publication Number Publication Date
CN103229270A CN103229270A (zh) 2013-07-31
CN103229270B true CN103229270B (zh) 2016-01-13

Family

ID=44774104

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201180052954.1A Active CN103229270B (zh) 2010-09-08 2011-09-01 离子植入的方法

Country Status (7)

Country Link
US (1) US8461556B2 (enExample)
EP (1) EP2614516A2 (enExample)
JP (1) JP5791722B2 (enExample)
KR (1) KR101878194B1 (enExample)
CN (1) CN103229270B (enExample)
TW (1) TWI521569B (enExample)
WO (1) WO2012033697A2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8461524B2 (en) * 2011-03-28 2013-06-11 Thermo Finnigan Llc Ion guide with improved gas dynamics and combined noise reduction device
US9070534B2 (en) * 2012-05-04 2015-06-30 Taiwan Semiconductor Manufacturing Co., Ltd. Ion beam dimension control for ion implantation process and apparatus, and advanced process control
JP5863153B2 (ja) * 2012-10-29 2016-02-16 日新イオン機器株式会社 イオン注入装置
US8884244B1 (en) * 2013-10-22 2014-11-11 Varian Semiconductor Equipment Associates, Inc. Dual mode ion implanter
US9269538B2 (en) * 2014-03-21 2016-02-23 Varian Semiconductor Equipment Associates, Inc. Ion beam uniformity control using ion beam blockers
US10377665B2 (en) * 2015-11-19 2019-08-13 Varian Semiconductor Equipment Associates, Inc. Modifying bulk properties of a glass substrate
DE102016106119B4 (de) * 2016-04-04 2019-03-07 mi2-factory GmbH Energiefilterelement für Ionenimplantationsanlagen für den Einsatz in der Produktion von Wafern

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63136618A (ja) * 1986-11-28 1988-06-08 Sony Corp エネルギ−照射方法
JP2648642B2 (ja) * 1990-04-17 1997-09-03 アプライド マテリアルズ インコーポレイテッド 巾広ビームでイオンインプランテーションを行なう方法及び装置
US5350926A (en) 1993-03-11 1994-09-27 Diamond Semiconductor Group, Inc. Compact high current broad beam ion implanter
JP2003249189A (ja) 2002-02-26 2003-09-05 Hitoshi Mikami イオン注入法
JP4901203B2 (ja) 2005-12-12 2012-03-21 東芝モバイルディスプレイ株式会社 イオンビームの照射方法及び薄膜トランジスタをもつ基板の製造装置
JP4997756B2 (ja) * 2005-12-20 2012-08-08 日新イオン機器株式会社 イオンビーム照射装置およびビーム均一性調整方法
KR101415411B1 (ko) * 2006-02-16 2014-07-04 가부시키가이샤 니콘 투영 광학계, 노광 장치, 노광 방법, 디스플레이의 제조방법, 마스크 및 마스크의 제조 방법
JP2008112840A (ja) 2006-10-30 2008-05-15 Shin Etsu Chem Co Ltd 単結晶シリコン太陽電池の製造方法及び単結晶シリコン太陽電池
US20090317937A1 (en) 2008-06-20 2009-12-24 Atul Gupta Maskless Doping Technique for Solar Cells
US7767986B2 (en) 2008-06-20 2010-08-03 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for controlling beam current uniformity in an ion implanter
US7816239B2 (en) * 2008-11-20 2010-10-19 Varian Semiconductor Equipment Associates, Inc. Technique for manufacturing a solar cell
US8900982B2 (en) 2009-04-08 2014-12-02 Varian Semiconductor Equipment Associates, Inc. Techniques for processing a substrate
US9076914B2 (en) * 2009-04-08 2015-07-07 Varian Semiconductor Equipment Associates, Inc. Techniques for processing a substrate
US9006688B2 (en) 2009-04-08 2015-04-14 Varian Semiconductor Equipment Associates, Inc. Techniques for processing a substrate using a mask
US8049192B2 (en) * 2009-12-24 2011-11-01 Varian Semiconductor Equipment Associates, Inc. Apparatus and system for controlling ion ribbon beam uniformity in an ion implanter
SG183267A1 (en) 2010-02-09 2012-09-27 Intevac Inc An adjustable shadow mask assembly for use in solar cell fabrications

Also Published As

Publication number Publication date
KR101878194B1 (ko) 2018-07-13
JP2013541839A (ja) 2013-11-14
WO2012033697A3 (en) 2012-07-26
CN103229270A (zh) 2013-07-31
JP5791722B2 (ja) 2015-10-07
TWI521569B (zh) 2016-02-11
TW201220368A (en) 2012-05-16
WO2012033697A2 (en) 2012-03-15
EP2614516A2 (en) 2013-07-17
US20120056110A1 (en) 2012-03-08
KR20130102575A (ko) 2013-09-17
US8461556B2 (en) 2013-06-11

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