KR101873461B1 - 하전 입자빔 묘화 장치 및 하전 입자빔 묘화 방법 - Google Patents

하전 입자빔 묘화 장치 및 하전 입자빔 묘화 방법 Download PDF

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Publication number
KR101873461B1
KR101873461B1 KR1020160110776A KR20160110776A KR101873461B1 KR 101873461 B1 KR101873461 B1 KR 101873461B1 KR 1020160110776 A KR1020160110776 A KR 1020160110776A KR 20160110776 A KR20160110776 A KR 20160110776A KR 101873461 B1 KR101873461 B1 KR 101873461B1
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South Korea
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KR1020160110776A
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English (en)
Korean (ko)
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KR20170029383A (ko
Inventor
노리아키 나카야마다
미즈나 스가누마
Original Assignee
가부시키가이샤 뉴플레어 테크놀로지
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Publication of KR20170029383A publication Critical patent/KR20170029383A/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31752—Lithography using particular beams or near-field effects, e.g. STM-like techniques
    • H01J2237/31754—Lithography using particular beams or near-field effects, e.g. STM-like techniques using electron beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31761—Patterning strategy
    • H01J2237/31762—Computer and memory organisation

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Electron Beam Exposure (AREA)
KR1020160110776A 2015-09-07 2016-08-30 하전 입자빔 묘화 장치 및 하전 입자빔 묘화 방법 KR101873461B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2015175610 2015-09-07
JPJP-P-2015-175610 2015-09-07
JPJP-P-2016-163389 2016-08-24
JP2016163389A JP6799967B2 (ja) 2015-09-07 2016-08-24 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020180028670A Division KR20180030407A (ko) 2015-09-07 2018-03-12 하전 입자빔 묘화 장치 및 하전 입자빔 묘화 방법

Publications (2)

Publication Number Publication Date
KR20170029383A KR20170029383A (ko) 2017-03-15
KR101873461B1 true KR101873461B1 (ko) 2018-07-02

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KR1020160110776A KR101873461B1 (ko) 2015-09-07 2016-08-30 하전 입자빔 묘화 장치 및 하전 입자빔 묘화 방법
KR1020180028670A KR20180030407A (ko) 2015-09-07 2018-03-12 하전 입자빔 묘화 장치 및 하전 입자빔 묘화 방법

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KR1020180028670A KR20180030407A (ko) 2015-09-07 2018-03-12 하전 입자빔 묘화 장치 및 하전 입자빔 묘화 방법

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JP (1) JP6799967B2 (ja)
KR (2) KR101873461B1 (ja)
TW (1) TWI597764B (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7034825B2 (ja) * 2018-05-16 2022-03-14 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
WO2022202420A1 (ja) * 2021-03-24 2022-09-29 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法、プラズマ発生装置およびプラズマ発生装置の設計方法
US11804361B2 (en) * 2021-05-18 2023-10-31 Nuflare Technology, Inc. Charged particle beam writing method, charged particle beam writing apparatus, and computer-readable recording medium
KR20230153915A (ko) * 2022-04-26 2023-11-07 가부시키가이샤 뉴플레어 테크놀로지 멀티 하전 입자 빔 묘화 장치, 멀티 하전 입자 빔 묘화 방법, 및 프로그램을 기록한 판독 가능한 기록 매체

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013243285A (ja) * 2012-05-22 2013-12-05 Nuflare Technology Inc 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3105580B2 (ja) * 1991-07-29 2000-11-06 富士通株式会社 荷電粒子線描画用マスク作成方法及びマスク
US6420717B1 (en) * 2000-04-11 2002-07-16 Applied Materials, Inc. Method and apparatus for real-time correction of resist heating in lithography
US6379851B1 (en) * 2000-07-31 2002-04-30 Applied Materials, Inc. Methods to predict and correct resist heating during lithography
JP5764364B2 (ja) * 2011-03-31 2015-08-19 株式会社ニューフレアテクノロジー 半導体装置の製造方法、描画装置、プログラム及びパターン転写装置
JP2014096604A (ja) * 2014-01-20 2014-05-22 Dainippon Printing Co Ltd 近接効果補正方法及びその方法を用いた電子線描画装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013243285A (ja) * 2012-05-22 2013-12-05 Nuflare Technology Inc 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法

Also Published As

Publication number Publication date
TWI597764B (zh) 2017-09-01
KR20170029383A (ko) 2017-03-15
JP2017055109A (ja) 2017-03-16
KR20180030407A (ko) 2018-03-22
TW201719722A (zh) 2017-06-01
JP6799967B2 (ja) 2020-12-16

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