TWI597764B - Charged particle beam drawing device and charged particle beam drawing method - Google Patents

Charged particle beam drawing device and charged particle beam drawing method Download PDF

Info

Publication number
TWI597764B
TWI597764B TW105125776A TW105125776A TWI597764B TW I597764 B TWI597764 B TW I597764B TW 105125776 A TW105125776 A TW 105125776A TW 105125776 A TW105125776 A TW 105125776A TW I597764 B TWI597764 B TW I597764B
Authority
TW
Taiwan
Prior art keywords
shot
amount
heat transfer
firing
calculation
Prior art date
Application number
TW105125776A
Other languages
English (en)
Chinese (zh)
Other versions
TW201719722A (zh
Inventor
Noriaki Nakayamada
Mizuna Suganuma
Original Assignee
Nuflare Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nuflare Technology Inc filed Critical Nuflare Technology Inc
Publication of TW201719722A publication Critical patent/TW201719722A/zh
Application granted granted Critical
Publication of TWI597764B publication Critical patent/TWI597764B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Electron Beam Exposure (AREA)
TW105125776A 2015-09-07 2016-08-12 Charged particle beam drawing device and charged particle beam drawing method TWI597764B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015175610 2015-09-07

Publications (2)

Publication Number Publication Date
TW201719722A TW201719722A (zh) 2017-06-01
TWI597764B true TWI597764B (zh) 2017-09-01

Family

ID=58317422

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105125776A TWI597764B (zh) 2015-09-07 2016-08-12 Charged particle beam drawing device and charged particle beam drawing method

Country Status (3)

Country Link
JP (1) JP6799967B2 (ja)
KR (2) KR101873461B1 (ja)
TW (1) TWI597764B (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7034825B2 (ja) * 2018-05-16 2022-03-14 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
US11804361B2 (en) * 2021-05-18 2023-10-31 Nuflare Technology, Inc. Charged particle beam writing method, charged particle beam writing apparatus, and computer-readable recording medium
CN117581158A (zh) * 2022-04-26 2024-02-20 纽富来科技股份有限公司 多带电粒子束描绘装置、多带电粒子束描绘方法以及记录有程序的可读取记录介质

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5894856B2 (ja) * 2012-05-22 2016-03-30 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法

Also Published As

Publication number Publication date
JP6799967B2 (ja) 2020-12-16
KR101873461B1 (ko) 2018-07-02
TW201719722A (zh) 2017-06-01
KR20170029383A (ko) 2017-03-15
JP2017055109A (ja) 2017-03-16
KR20180030407A (ko) 2018-03-22

Similar Documents

Publication Publication Date Title
JP5636238B2 (ja) 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP5894856B2 (ja) 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
KR101614111B1 (ko) 하전 입자빔 묘화 장치 및 하전 입자빔의 조사량 변조 계수의 취득 방법
TWI611250B (zh) 帶電粒子束描繪裝置及帶電粒子束描繪方法
JP4714591B2 (ja) パターン面積値算出方法、近接効果補正方法及び荷電粒子ビーム描画方法
TWI658331B (zh) 帶電粒子束的照射量修正用參數之取得方法，帶電粒子束描繪方法及帶電粒子束描繪裝置
TWI613524B (zh) 帶電粒子束描繪裝置及帶電粒子束描繪方法
TW201830148A (zh) 電子束裝置及電子束之位置偏移修正方法
TWI597764B (zh) Charged particle beam drawing device and charged particle beam drawing method
TWI591675B (zh) 資料生成裝置、能量射束描繪裝置及能量射束描繪方法
JP2011228503A (ja) 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
TW201624521A (zh) 加速電壓漂移的修正方法，帶電粒子束的漂移修正方法，及帶電粒子束描繪裝置
TWI730353B (zh) 帶電粒子束描繪裝置及帶電粒子束描繪方法
TWI616922B (zh) 帶電粒子束描繪裝置及帶電粒子束描繪方法
JP2013115303A (ja) 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP6869695B2 (ja) 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
US10032603B2 (en) Charged particle beam lithography apparatus and charged particle beam lithography method
JP2012195571A (ja) 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法