KR101833094B1 - 블랭킹 장치, 묘화 장치 및 물품의 제조 방법 - Google Patents

블랭킹 장치, 묘화 장치 및 물품의 제조 방법 Download PDF

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Publication number
KR101833094B1
KR101833094B1 KR1020140074110A KR20140074110A KR101833094B1 KR 101833094 B1 KR101833094 B1 KR 101833094B1 KR 1020140074110 A KR1020140074110 A KR 1020140074110A KR 20140074110 A KR20140074110 A KR 20140074110A KR 101833094 B1 KR101833094 B1 KR 101833094B1
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South Korea
Prior art keywords
beams
blankers
charged particle
drive
combination
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KR1020140074110A
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English (en)
Korean (ko)
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KR20150001631A (ko
Inventor
도모유키 모리타
마사토 무라키
Original Assignee
캐논 가부시끼가이샤
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Publication of KR20150001631A publication Critical patent/KR20150001631A/ko
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Publication of KR101833094B1 publication Critical patent/KR101833094B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
KR1020140074110A 2013-06-26 2014-06-18 블랭킹 장치, 묘화 장치 및 물품의 제조 방법 Active KR101833094B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013134212A JP6212299B2 (ja) 2013-06-26 2013-06-26 ブランキング装置、描画装置、および物品の製造方法
JPJP-P-2013-134212 2013-06-26

Publications (2)

Publication Number Publication Date
KR20150001631A KR20150001631A (ko) 2015-01-06
KR101833094B1 true KR101833094B1 (ko) 2018-02-27

Family

ID=52114667

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020140074110A Active KR101833094B1 (ko) 2013-06-26 2014-06-18 블랭킹 장치, 묘화 장치 및 물품의 제조 방법

Country Status (5)

Country Link
US (1) US9040935B2 (https=)
JP (1) JP6212299B2 (https=)
KR (1) KR101833094B1 (https=)
CN (1) CN104253025B (https=)
TW (1) TWI552196B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6289181B2 (ja) * 2013-06-26 2018-03-07 キヤノン株式会社 描画装置、及び、物品の製造方法
JP2015070213A (ja) * 2013-09-30 2015-04-13 キヤノン株式会社 描画装置、および物品の製造方法
KR102358009B1 (ko) 2015-11-10 2022-02-04 삼성전자주식회사 빔 투사 장치 및 빔 투사 장치를 이용하여 빔을 투사하는 방법
JP6804389B2 (ja) * 2017-05-30 2020-12-23 株式会社ニューフレアテクノロジー 描画装置および描画方法
JP6854215B2 (ja) * 2017-08-02 2021-04-07 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004119876A (ja) * 2002-09-27 2004-04-15 Advantest Corp 電子ビーム露光装置、偏向装置、及び電子ビーム露光方法
US20100038554A1 (en) * 2008-08-07 2010-02-18 Ims Nanofabrication Ag Compensation of dose inhomogeneity and image distortion
JP2013069813A (ja) * 2011-09-21 2013-04-18 Canon Inc 描画装置、および、物品の製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2003276779A1 (en) * 2002-10-30 2004-05-25 Mapper Lithography Ip B.V. Electron beam exposure system
GB2414111B (en) 2004-04-30 2010-01-27 Ims Nanofabrication Gmbh Advanced pattern definition for particle-beam processing
US7816655B1 (en) 2004-05-21 2010-10-19 Kla-Tencor Technologies Corporation Reflective electron patterning device and method of using same
JP2007019243A (ja) * 2005-07-07 2007-01-25 Canon Inc 電子ビーム装置及びデバイス製造方法
US8253923B1 (en) * 2008-09-23 2012-08-28 Pinebrook Imaging Technology, Ltd. Optical imaging writer system
US8610082B2 (en) * 2011-03-25 2013-12-17 Canon Kabushiki Kaisha Drawing apparatus and method of manufacturing article
JP5832141B2 (ja) * 2011-05-16 2015-12-16 キヤノン株式会社 描画装置、および、物品の製造方法
JP2013016744A (ja) * 2011-07-06 2013-01-24 Canon Inc 描画装置及びデバイスの製造方法
JP2013074088A (ja) * 2011-09-28 2013-04-22 Canon Inc 荷電粒子線描画装置、描画データ生成方法、描画データ生成プログラム、それを用いた物品の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004119876A (ja) * 2002-09-27 2004-04-15 Advantest Corp 電子ビーム露光装置、偏向装置、及び電子ビーム露光方法
US20100038554A1 (en) * 2008-08-07 2010-02-18 Ims Nanofabrication Ag Compensation of dose inhomogeneity and image distortion
JP2010041055A (ja) 2008-08-07 2010-02-18 Ims Nanofabrication Ag 照射の不均等性および画像歪みの補償
JP2013069813A (ja) * 2011-09-21 2013-04-18 Canon Inc 描画装置、および、物品の製造方法

Also Published As

Publication number Publication date
KR20150001631A (ko) 2015-01-06
CN104253025A (zh) 2014-12-31
US20150001417A1 (en) 2015-01-01
CN104253025B (zh) 2017-07-07
US9040935B2 (en) 2015-05-26
JP6212299B2 (ja) 2017-10-11
TW201503231A (zh) 2015-01-16
TWI552196B (zh) 2016-10-01
JP2015012036A (ja) 2015-01-19

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