KR101829639B1 - 안정하고 농축가능하며, 수용성 셀룰로오스가 없는 화학 기계적 연마 조성물 - Google Patents

안정하고 농축가능하며, 수용성 셀룰로오스가 없는 화학 기계적 연마 조성물 Download PDF

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Publication number
KR101829639B1
KR101829639B1 KR1020120021967A KR20120021967A KR101829639B1 KR 101829639 B1 KR101829639 B1 KR 101829639B1 KR 1020120021967 A KR1020120021967 A KR 1020120021967A KR 20120021967 A KR20120021967 A KR 20120021967A KR 101829639 B1 KR101829639 B1 KR 101829639B1
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KR
South Korea
Prior art keywords
chemical mechanical
mechanical polishing
weight
polishing composition
acid
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Expired - Fee Related
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KR1020120021967A
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English (en)
Korean (ko)
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KR20120100820A (ko
Inventor
하메드 라크로우트
진지에 씨
조셉 레티지아
리쑤
토마스 에이치. 칼란타르
프란시스 켈리
제이. 키스 헤리스
크리스토퍼 제이. 터커
Original Assignee
다우 글로벌 테크놀로지스 엘엘씨
롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드
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Application filed by 다우 글로벌 테크놀로지스 엘엘씨, 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드 filed Critical 다우 글로벌 테크놀로지스 엘엘씨
Publication of KR20120100820A publication Critical patent/KR20120100820A/ko
Application granted granted Critical
Publication of KR101829639B1 publication Critical patent/KR101829639B1/ko
Expired - Fee Related legal-status Critical Current
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/06—Other polishing compositions
    • C09G1/14—Other polishing compositions based on non-waxy substances
    • C09G1/16—Other polishing compositions based on non-waxy substances on natural or synthetic resins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020120021967A 2011-03-03 2012-03-02 안정하고 농축가능하며, 수용성 셀룰로오스가 없는 화학 기계적 연마 조성물 Expired - Fee Related KR101829639B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/039,705 US8440097B2 (en) 2011-03-03 2011-03-03 Stable, concentratable, water soluble cellulose free chemical mechanical polishing composition
US13/039,705 2011-03-03

Publications (2)

Publication Number Publication Date
KR20120100820A KR20120100820A (ko) 2012-09-12
KR101829639B1 true KR101829639B1 (ko) 2018-03-29

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120021967A Expired - Fee Related KR101829639B1 (ko) 2011-03-03 2012-03-02 안정하고 농축가능하며, 수용성 셀룰로오스가 없는 화학 기계적 연마 조성물

Country Status (7)

Country Link
US (1) US8440097B2 (enExample)
JP (1) JP6118501B2 (enExample)
KR (1) KR101829639B1 (enExample)
CN (1) CN102690609B (enExample)
DE (1) DE102012004219A1 (enExample)
FR (1) FR2972195B1 (enExample)
TW (1) TWI602909B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210053082A (ko) * 2019-11-01 2021-05-11 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼 연마 방법

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8435896B2 (en) * 2011-03-03 2013-05-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stable, concentratable chemical mechanical polishing composition and methods relating thereto
US8545715B1 (en) * 2012-10-09 2013-10-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and method
US20140308814A1 (en) * 2013-04-15 2014-10-16 Applied Materials, Inc Chemical mechanical polishing methods and systems including pre-treatment phase and pre-treatment compositions
US9984895B1 (en) * 2017-01-31 2018-05-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for tungsten
JP7209620B2 (ja) * 2017-03-14 2023-01-20 株式会社フジミインコーポレーテッド 研磨用組成物、その製造方法ならびにこれを用いた研磨方法および基板の製造方法
EP3631045A4 (en) * 2017-05-25 2021-01-27 Fujifilm Electronic Materials U.S.A., Inc. CHEMICAL-MECHANICAL POLISHING SLUDGE FOR COBALT APPLICATIONS
TWI896724B (zh) * 2020-09-29 2025-09-11 日商福吉米股份有限公司 研磨用組成物及其製造方法、研磨方法以及基板的製造方法

Citations (3)

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JP2001077063A (ja) * 1999-09-07 2001-03-23 Mitsubishi Materials Silicon Corp シリコンウェーハの研磨液及びこれを用いた研磨方法
JP2008091411A (ja) * 2006-09-29 2008-04-17 Fujifilm Corp 金属用研磨液
JP2009256184A (ja) * 2008-03-24 2009-11-05 Adeka Corp 表面改質コロイダルシリカおよびこれを含有するｃｍｐ用研磨組成物

Family Cites Families (15)

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SG99289A1 (en) 1998-10-23 2003-10-27 Ibm Chemical-mechanical planarization of metallurgy
US6375693B1 (en) 1999-05-07 2002-04-23 International Business Machines Corporation Chemical-mechanical planarization of barriers or liners for copper metallurgy
KR20040002907A (ko) 2001-04-12 2004-01-07 로델 홀딩스 인코포레이티드 계면활성제를 갖는 연마 조성물
US6632259B2 (en) 2001-05-18 2003-10-14 Rodel Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
JP4641155B2 (ja) * 2004-06-03 2011-03-02 株式会社日本触媒 化学機械研磨用の研磨剤
US7384871B2 (en) 2004-07-01 2008-06-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
US7303993B2 (en) 2004-07-01 2007-12-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
US20060000808A1 (en) * 2004-07-01 2006-01-05 Fuji Photo Film Co., Ltd. Polishing solution of metal and chemical mechanical polishing method
US7086935B2 (en) 2004-11-24 2006-08-08 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Cellulose-containing polishing compositions and methods relating thereto
US7824568B2 (en) 2006-08-17 2010-11-02 International Business Machines Corporation Solution for forming polishing slurry, polishing slurry and related methods
US20090032765A1 (en) * 2007-08-03 2009-02-05 Jinru Bian Selective barrier polishing slurry
TW200920828A (en) * 2007-09-20 2009-05-16 Fujifilm Corp Polishing slurry for metal and chemical mechanical polishing method
US20090215266A1 (en) 2008-02-22 2009-08-27 Thomas Terence M Polishing Copper-Containing patterned wafers
US9633865B2 (en) * 2008-02-22 2017-04-25 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Low-stain polishing composition
US8540893B2 (en) 2008-08-04 2013-09-24 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and methods relating thereto

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001077063A (ja) * 1999-09-07 2001-03-23 Mitsubishi Materials Silicon Corp シリコンウェーハの研磨液及びこれを用いた研磨方法
JP2008091411A (ja) * 2006-09-29 2008-04-17 Fujifilm Corp 金属用研磨液
JP2009256184A (ja) * 2008-03-24 2009-11-05 Adeka Corp 表面改質コロイダルシリカおよびこれを含有するｃｍｐ用研磨組成物

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210053082A (ko) * 2019-11-01 2021-05-11 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼 연마 방법
KR102570805B1 (ko) 2019-11-01 2023-08-24 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼 연마 방법

Also Published As

Publication number Publication date
US8440097B2 (en) 2013-05-14
FR2972195A1 (fr) 2012-09-07
KR20120100820A (ko) 2012-09-12
DE102012004219A1 (de) 2012-09-06
CN102690609A (zh) 2012-09-26
JP6118501B2 (ja) 2017-04-19
TW201302997A (zh) 2013-01-16
CN102690609B (zh) 2014-11-26
FR2972195B1 (fr) 2015-08-28
JP2012199531A (ja) 2012-10-18
TWI602909B (zh) 2017-10-21
US20120225556A1 (en) 2012-09-06

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