KR101823725B1 - 노광 장치 및 디바이스의 제조 방법 - Google Patents

노광 장치 및 디바이스의 제조 방법 Download PDF

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KR101823725B1
KR101823725B1 KR1020140100267A KR20140100267A KR101823725B1 KR 101823725 B1 KR101823725 B1 KR 101823725B1 KR 1020140100267 A KR1020140100267 A KR 1020140100267A KR 20140100267 A KR20140100267 A KR 20140100267A KR 101823725 B1 KR101823725 B1 KR 101823725B1
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South Korea
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exposure
variation
optical system
angle
projection optical
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Korean (ko)
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KR20150020066A (ko
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도모히로 호시노
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캐논 가부시끼가이샤
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70308Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
KR1020140100267A 2013-08-13 2014-08-05 노광 장치 및 디바이스의 제조 방법 Active KR101823725B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013168336A JP6381188B2 (ja) 2013-08-13 2013-08-13 露光装置およびデバイスの製造方法
JPJP-P-2013-168336 2013-08-13

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KR20150020066A KR20150020066A (ko) 2015-02-25
KR101823725B1 true KR101823725B1 (ko) 2018-01-30

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KR1020140100267A Active KR101823725B1 (ko) 2013-08-13 2014-08-05 노광 장치 및 디바이스의 제조 방법

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US (1) US9348235B2 (enExample)
JP (1) JP6381188B2 (enExample)
KR (1) KR101823725B1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017538156A (ja) 2014-12-02 2017-12-21 エーエスエムエル ネザーランズ ビー.ブイ. リソグラフィ方法及び装置
JP6613074B2 (ja) * 2015-08-20 2019-11-27 キヤノン株式会社 決定方法、露光装置、プログラム、および物品の製造方法
CN108292105B (zh) * 2015-09-24 2021-03-26 Asml荷兰有限公司 减少光刻工艺中掩模版的加热和/或冷却的影响的方法
JP6554141B2 (ja) * 2017-05-26 2019-07-31 キヤノン株式会社 決定方法、露光方法、情報処理装置、プログラム及び物品の製造方法
JP6944323B2 (ja) * 2017-09-21 2021-10-06 キヤノン株式会社 計算方法、露光方法、プログラム、露光装置、および物品の製造方法
JP7054365B2 (ja) * 2018-05-25 2022-04-13 キヤノン株式会社 評価方法、露光方法、および物品製造方法
EP3702839B1 (en) * 2019-02-27 2021-11-10 ASML Netherlands B.V. Method of reducing effects of lens heating and/or cooling in a lithographic process
JP2020187334A (ja) * 2019-05-17 2020-11-19 キヤノン株式会社 露光装置、および物品製造方法
JP7213757B2 (ja) * 2019-05-31 2023-01-27 キヤノン株式会社 露光装置、および物品製造方法
JP7431694B2 (ja) * 2020-07-28 2024-02-15 キヤノン株式会社 情報処理装置、膜形成装置、物品の製造方法、およびプログラム

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013115348A (ja) * 2011-11-30 2013-06-10 Canon Inc 投影光学系の結像特性の変動量の算出方法、露光装置およびデバイス製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58179834A (ja) 1982-04-14 1983-10-21 Canon Inc 投影露光装置及び方法
JP3720582B2 (ja) * 1998-06-04 2005-11-30 キヤノン株式会社 投影露光装置及び投影露光方法
TW500987B (en) * 2000-06-14 2002-09-01 Asm Lithography Bv Method of operating an optical imaging system, lithographic projection apparatus, device manufacturing method, and device manufactured thereby
JP2002184687A (ja) * 2000-10-02 2002-06-28 Canon Inc 露光装置
JP2006019561A (ja) * 2004-07-02 2006-01-19 Canon Inc 露光方法
US7403264B2 (en) * 2004-07-08 2008-07-22 Asml Netherlands B.V. Lithographic projection apparatus and a device manufacturing method using such lithographic projection apparatus
JP5264116B2 (ja) * 2007-07-26 2013-08-14 キヤノン株式会社 結像特性変動予測方法、露光装置、並びにデバイス製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013115348A (ja) * 2011-11-30 2013-06-10 Canon Inc 投影光学系の結像特性の変動量の算出方法、露光装置およびデバイス製造方法

Also Published As

Publication number Publication date
JP6381188B2 (ja) 2018-08-29
JP2015037124A (ja) 2015-02-23
KR20150020066A (ko) 2015-02-25
US20150049315A1 (en) 2015-02-19
US9348235B2 (en) 2016-05-24

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