KR101782367B1 - Apparatus for etching substrates - Google Patents

Apparatus for etching substrates Download PDF

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Publication number
KR101782367B1
KR101782367B1 KR1020160007256A KR20160007256A KR101782367B1 KR 101782367 B1 KR101782367 B1 KR 101782367B1 KR 1020160007256 A KR1020160007256 A KR 1020160007256A KR 20160007256 A KR20160007256 A KR 20160007256A KR 101782367 B1 KR101782367 B1 KR 101782367B1
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South Korea
Prior art keywords
unit
module
laser
vacuum chamber
laser beam
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KR1020160007256A
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Korean (ko)
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KR20170087586A (en
Inventor
전진홍
김민호
우정훈
김두환
성주환
이석희
최교원
홍태선
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삼성디스플레이 주식회사
주식회사 에스에프에이
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Priority to KR1020160007256A priority Critical patent/KR101782367B1/en
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    • H01L51/56—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H01L51/0017—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H01L2021/60007—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process
    • H01L2021/60022—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process using bump connectors, e.g. for flip chip mounting
    • H01L2021/60097—Applying energy, e.g. for the soldering or alloying process
    • H01L2021/60172—Applying energy, e.g. for the soldering or alloying process using static pressure
    • H01L2021/60187—Isostatic pressure, e.g. degassing using vacuum or pressurised liquid

Abstract

A top-down substrate etching apparatus is disclosed. A top-down type substrate etching apparatus according to the present invention includes: a vacuum chamber in which an etching process for a substrate is performed; a substrate chamber disposed inside the vacuum chamber through a first chamber window disposed outside the vacuum chamber and provided in the vacuum chamber; And a second chamber window provided in the vacuum chamber. The laser beam passes through the inside of the vacuum chamber and is received by the laser beam. And a laser output measuring unit for measuring the output of the laser output measuring unit.

Description

[0001] Apparatus for etching substrates [0002]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a top-down type substrate etching apparatus, and more particularly, to a top-down type substrate etching apparatus capable of recognizing a malfunction of a device by measuring an output power of a laser irradiated to the substrate during an etching process, .

As a result of the rapid development of information and communication technology and the expansion of the market, a flat panel display is attracting attention as a display device.

Such flat panel display devices include a liquid crystal display (LCD), a plasma display panel (PDP), and an organic light emitting diode (PDP) display.

Among them, the organic light emitting diode (OLED) display has advantages such as a fast response speed, lower power consumption than a conventional liquid crystal display (LCD), light weight, no need for a separate backlight device, And has a very good merit such as high brightness.

Organic light emitting diode displays (OLED displays) can be divided into passive PMOLEDs and active AMOLEDs depending on the driving method. In particular, AMOLED is a self-emissive display that has a faster response speed than conventional displays, has a natural color and has low power consumption. In addition, if AMOLED is applied to film, not substrate, it can implement the technology of flexible display.

The organic light emitting diode display (OLED display) is manufactured through a pattern forming process, an organic thin film deposition process, an etching process, a sealing process, and a deposition process in which an organic thin film is deposited and a substrate is subjected to a sealing process. Can be produced.

On the other hand, among the various processes, the etching process is a process of obtaining a desired shape by etching or etching an unnecessary portion of the surface of the substrate by a physical or chemical method.

In the etching process, various methods such as physical or chemical methods are used like semiconductor, and one of them is a laser etching method. The etching method of the substrate by the laser is simpler in structure and reduces the etching time compared to other methods, and is widely adopted in recent years.

FIG. 1 is a schematic view of a general top-down type substrate etching apparatus, and FIG. 2 is a view showing a state in which particles are loaded in a chamber window in FIG.

As shown in these figures, in the case of a general top-down type substrate etching apparatus, a substrate G to be etched is disposed on the upper side, and a laser module 10 ) Are arranged on the substrate.

The substrate G is disposed inside the vacuum chamber, while the laser module 10 is disposed outside the vacuum chamber, and irradiates the laser beam onto the substrate G at that position. At this time, a transparent chamber window (20) through which the laser beam passes is interposed in the wall surface of the vacuum chamber where the laser module (10) is disposed.

When the laser module 10 positioned outside the chamber window 20 irradiates the laser beam, the laser beam is irradiated onto the substrate G through the chamber window 20, thereby etching an unnecessary portion of the substrate G .

When the etching process is performed through such a top-down type substrate etching apparatus, the substrate G is disposed on the upper side and the laser beam is irradiated on the upper substrate G. Therefore, (P) is generated in the chamber window (20), and particles (P) released from the substrate (G) by gravity are loaded on the chamber window (20).

In this etching process, the laser module 10 must provide a laser beam of constant power to the substrate G, and an etching device according to the prior art for the inspection is oscillated in the laser module 10, A part of the laser beam before it passes through a beam splitter (not shown) is separated and the output of the separated laser beam is measured.

The laser beam output measuring method according to the related art can measure only the output of the laser beam in the oscillation region (between the laser module 10 and the chamber window 20) There is a problem that the output of the laser beam can not be measured.

Since the laser beam output measuring method according to the related art measures only the output of the laser beam emitted from the laser module 10, the particles P generated in the etching process in the chamber window 20, as shown in FIG. 2, (The laser beam output in the machining region is abnormal, and the laser beam output in the oscillation region is normal). In this case, The etching process can be continued to mass-produce a large number of defective products)

Therefore, it is necessary to develop a top-down substrate etching apparatus capable of monitoring the output of a laser beam projected into a vacuum chamber rather than an output of a laser beam oscillated in the laser module.

Korea Patent Registration No. 10-1998-0048944 (Korea Electronics and Telecommunications Research Institute) 1998.09.15

SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a top-down type substrate etching apparatus capable of detecting the malfunction of a device by measuring the output of a laser beam projected into a vacuum chamber and preventing the generation of defective products.

According to an aspect of the present invention, there is provided a plasma processing apparatus comprising: a vacuum chamber in which an etching process for a substrate is performed; A laser unit disposed outside the vacuum chamber and irradiating a laser beam onto the substrate in the vacuum chamber through a first chamber window provided in the vacuum chamber to perform the etching process; And a laser output measuring unit which is disposed outside the vacuum chamber and receives a laser beam passed through the inside of the vacuum chamber through a second chamber window provided in the vacuum chamber and measures an output of the laser beam, A substrate etching apparatus may be provided.

The laser unit may be disposed in a lower region of the vacuum chamber, and the laser output measurement unit may be disposed in an upper region of the vacuum chamber.

And a beam delivery unit disposed inside the vacuum chamber and transmitting the laser beam emitted from the laser unit to the laser output measurement unit.

The beam delivery unit may include a focusing module for focusing the laser beam onto the laser power measurement unit.

The focusing module includes: a first optical system for changing a path of the laser beam emitted from the laser unit; And a second optical system that is disposed apart from the first optical system and transmits the laser beam that has been path-changed in the first optical system to the laser output measurement unit.

At least one of the first optical system and the second optical system may be provided with a beam focusing unit for focusing the laser beam.

The beam focusing unit may include at least one of a focusing lens unit and a focusing mirror unit.

Wherein each of the first optical system and the second optical system is provided with a first mirror portion and a second mirror portion for reflecting the laser beam, and at least one of the first optical system and the second optical system includes: And an angle adjusting unit for adjusting an angle of arrangement of the second mirror unit.

And a stage moving unit connected to the beam transmitting unit and moving the beam transmitting unit in the vacuum chamber.

The stage moving unit includes a stage module to which the beam transmitting unit is coupled; And a driving module for supporting the stage module and moving the stage module.

The stage module may include a carrier portion for transferring the substrate.

Embodiments of the present invention are characterized in that the laser output measuring unit receives the laser beam passed through the inside of the vacuum chamber through the second chamber window and measures the output of the delivered laser beam, The output can be monitored to recognize whether the device is malfunctioning and to prevent the occurrence of defective products.

1 is a schematic view of a general top down type substrate etching apparatus.
FIG. 2 is a view showing a state in which particles are loaded in a chamber window in FIG. 1. FIG.
3 is a schematic illustration of a top down substrate etching apparatus according to one embodiment of the present invention.
Fig. 4 is a view showing the beam transmitting unit and the stage moving unit of Fig. 3;
5 is an enlarged view of a portion A in Fig.
Fig. 6 is a side view of Fig. 5. Fig.
Figs. 7 and 8 are operational state diagrams of Fig.
Fig. 9 is a view showing a particle addition unit in Fig. 3; Fig.
Fig. 10 is a perspective view of the particle collecting unit of Fig. 9; Fig.
11 is a cross-sectional view of Fig.

In order to fully understand the present invention, operational advantages of the present invention, and objects achieved by the practice of the present invention, reference should be made to the accompanying drawings and the accompanying drawings which illustrate preferred embodiments of the present invention.

Hereinafter, the present invention will be described in detail with reference to the preferred embodiments of the present invention with reference to the accompanying drawings. In the following description, well-known functions or constructions are not described in order to avoid unnecessary obscuration of the present invention.

Meanwhile, the substrate described below may be a glass substrate for an organic light emitting diode display (OLED display).

FIG. 3 is a view schematically showing a top-down type substrate etching apparatus according to an embodiment of the present invention, FIG. 4 is a view showing the beam transmitting unit and the stage moving unit of FIG. 3, Fig. 6 is a side view of Fig. 5, Figs. 7 and 8 are operational state diagrams of Fig. 3, Fig. 9 is a view showing a particle addition unit in Fig. 3, Fig. 11 is a cross-sectional view of Fig. 10; Fig.

3 to 11, the top-down type substrate etching apparatus according to the present embodiment includes a vacuum chamber 110 in which an etching process for the substrate G is performed, and a vacuum chamber 110 disposed outside the vacuum chamber 110 And a laser beam L is irradiated to the substrate G in the vacuum chamber 110 through a first chamber window 111 provided in the vacuum chamber 110 to perform an etching process And a second chamber window 112 which is disposed outside the vacuum chamber 110 and is provided in the vacuum chamber 110. The laser unit 120 is a laser And a laser output measuring unit (S) which receives the beam (L) and measures the output of the laser beam (L).

The vacuum chamber 110 is a box-like structure as shown in FIG. 3, and is a place where an etching process for the substrate G proceeds in the vacuum chamber 110. A gate valve (not shown) is provided on one side wall of the vacuum chamber 110 to allow the substrate G to go in and out.

A first chamber window 111 is provided on a bottom surface of the vacuum chamber 110 and a second chamber window 112 is provided on an upper surface of the vacuum chamber 110. The first chamber window 111 is a window through which a laser beam L of a specific wavelength can pass and a laser beam L from a laser unit 120 disposed outside the vacuum chamber 110 is introduced into a vacuum chamber 110).

The second chamber window 112 is a window through which the laser beam L of a specific wavelength can pass as in the case of the first chamber window 111. When the laser beam L passing through the inside of the vacuum chamber 110 is vacuum The laser beam L in the vacuum chamber 110 is transmitted to the outside of the vacuum chamber 110 so as to be transmitted to the laser output measuring unit S disposed outside the chamber 110. [

A plurality of first chamber windows 111 may be provided on the bottom surface of the vacuum chamber 110 and a plurality of second chamber windows 112 may be provided on the top surface of the vacuum chamber 110.

The vacuum chamber 110 is provided with a substrate carrier part 172 for holding and moving the substrate G by moving. An electrostatic chuck (not shown) or a magnetic force chuck (not shown) for chucking the substrate G may be provided on the substrate carrier portion 172 in this embodiment. The substrate carrier portion 172 is provided in a stage module 171 to be described later. For convenience of explanation, the stage module 171 will be described later.

The laser unit 120 irradiates the substrate G in the vacuum chamber 110 with the laser beam L through the first chamber window 111 to advance the etching process. In this embodiment, the laser unit 120 is disposed outside the vacuum chamber 110, that is, in the lower region. It is not preferable that the configurations other than the substrate G are disposed inside the vacuum chamber 110 because a vacuum is formed in the inside of the vacuum chamber 110.

The laser unit 120 is disposed in the lower region of the vacuum chamber 110 and irradiates the laser beam L onto the substrate G through the first chamber window 111 at the position to perform the etching process.

At this time, since the laser unit 120 is disposed in the lower region of the substrate G, the laser beam L emitted from the laser unit 120 can be irradiated to the lower portion of the substrate G, And the particles P may be dropped toward the first chamber window 111 during the etching process.

In this embodiment, a plurality of laser units 120 are provided, and each of the plurality of laser units 120 can simultaneously perform an etching operation through each of the first chamber windows 111, Since the etching operation is performed in a wide area, the range in which the particles P scatter is widened. Therefore, the top-down type substrate etching apparatus according to the present embodiment includes a substrate P disposed between the substrate G and the first chamber window 111 and configured to remove particles P separated from the substrate G during the etching process by the laser unit 120, And a particle collecting unit 130 for collecting the particle collecting unit 130. The particle collecting unit 130 will be described later for convenience of explanation.

The laser output measuring unit S is disposed outside the vacuum chamber 110 and includes a laser beam L (hereinafter, referred to as " L ") that passes through the inside of the vacuum chamber 110 through a second chamber window 112 provided in the vacuum chamber 110 And measures an output of the laser beam L.

In the present embodiment, a laser power meter for receiving a laser beam L emitted from a laser light source and converting the laser beam L into an electric signal is used for the laser output measurement unit S.

Since the inside of the vacuum chamber 110 is formed in a vacuum atmosphere as described above, it is not preferable that the configurations other than the substrate G are arranged inside the vacuum chamber 110, 110, and receives the laser beam L passing through the inside of the vacuum chamber 110 through the second chamber window 112 at that position.

In this embodiment, a plurality of laser units 120 are provided, and each laser output measurement unit S measures the output of the laser beam L passing through each of the second chamber windows 112.

The laser output measuring unit S receives the laser beam L having passed through the inside of the vacuum chamber 110 through the second chamber window 112, By monitoring the output of the beam L, the output of the laser beam L in the vacuum chamber 110, which is the machining area, can be monitored, thereby recognizing the malfunction of the device and preventing the generation of defective products.

On the other hand, when the etching process is performed, the angle at which the laser unit 120 emits the laser beam L toward the substrate G may be changed by the flatness, alignment, or the like of the substrate. The laser output measuring unit S in which the laser beam L is arranged in the upper region of the vacuum chamber 110 in accordance with the laser beam L emission angle of the laser unit 120 arranged in the lower region of the vacuum chamber 110, It may not be easily reached.

Therefore, the top-down type substrate etching apparatus according to the present embodiment includes a beam transmission unit (not shown) disposed in the vacuum chamber 110 and transmitting the laser beam L emitted from the laser unit 120 to the laser output measurement unit S 160).

On the other hand, as described above, the etching operation of the substrate G is performed inside the vacuum chamber 110, and the laser beam L oscillated by the laser unit 120 is focused at the height at which the substrate G is disposed . When the laser beam L set to be focused at the position of the substrate G directly irradiates the laser output measurement unit S, the laser output measurement unit S and the laser output measurement unit S, which are disposed in the upper region of the vacuum chamber 110, The laser beam L that irradiates the laser output measurement unit S by the positional difference with the substrate G disposed inside the laser output measurement unit 110 can not be focused on the laser output measurement unit S, The output of the laser beam L measured in the measuring unit S may be different from the output of the laser beam L irradiated on the substrate G. [

The beam transmission unit 160 according to the present embodiment includes a focusing module 161 that focuses the laser beam L on the laser output measurement unit S. [ In this embodiment, the focusing module 161 is supported on the transmitting unit frame portion 165 provided in the beam transmitting unit 160. [

The focusing module 161 is configured so that the path of the laser beam L arriving at the laser output measuring unit S is larger than the path of the laser beam L arriving at the substrate G and reaches the laser output measuring unit S Thereby preventing the focused laser beam L from being focused on the laser output measurement unit S. The focusing module 161 focuses the laser beam L oscillated by the laser unit 120 and supplies the laser beam L to the laser output measuring unit S. [

The focusing module 161 includes a first optical system 162 that changes the path of the laser beam L emitted from the laser unit 120 and a second optical system 162 that is disposed apart from the first optical system 162, And a second optical system 163 for transmitting the laser beam L that has been changed in the optical system 162 to the laser output measurement unit S. [ In this embodiment, the first optical system 162 and the second optical system 163 are disposed facing each other.

The first optical system 162 changes the path of the laser beam L that has passed through the first chamber window 111 to the second optical system 163 and the second optical system 163 changes the path of the laser beam L 1 optical system 162 to the laser output measurement unit S side.

The first optical system 162 may be provided with a first mirror unit (not shown) for reflecting the laser beam L, and the second optical system 163 may be provided with a second mirror unit (Not shown) that reflects the laser beam L may be provided. In this embodiment, the first mirror portion (not shown) and the second mirror portion (not shown) are provided with one or a plurality of reflecting mirrors.

At least one of the first optical system 162 and the second optical system 163 is provided with a beam focusing unit (not shown) for focusing the laser beam L. [ In the present embodiment, a beam focusing unit (not shown) is provided in the second optical system 163 for convenience of explanation. The scope of the present invention is not limited thereto, and a beam focusing unit Or may be provided in the first optical system 162.

In this embodiment, the beam focusing section (not shown) includes at least one of a focusing lens section (not shown) and a focusing mirror section (not shown). Here, the focusing lens unit (not shown) includes a convex lens series and the focusing mirror unit (not shown) includes a concave mirror series.

At least one of the first optical system 162 and the second optical system according to the present embodiment includes an angle adjusting unit (not shown) for adjusting the arrangement angle of the first mirror unit (not shown) or the second mirror unit ). In this embodiment, the second optical system 163 includes an angle adjusting unit (not shown) for adjusting the angle of the second mirror unit (not shown) for convenience of explanation. And the first optical system 162 may have an angle adjusting unit (not shown) for adjusting the angle of arrangement of the first mirror unit (not shown).

(Not shown) rotatably provided in the second optical system 163 and coupled to a second mirror unit (not shown) and a rotation shaft (not shown) connected to a rotation shaft (Not shown) that rotates the rotating shaft (not shown). The user can rotate the rotation shaft (not shown) through an operation unit (not shown) to adjust the arrangement angle of the second mirror unit (not shown).

The angle adjusting unit (not shown) adjusts the angle of the second mirror unit (not shown) to adjust the reflection angle of the laser beam L reflected by the laser output measuring unit S. As described above, the second optical system 163 according to the present embodiment includes the angle adjusting unit (not shown) that can adjust the arrangement angle of the second mirror unit (not shown) It is possible to easily transmit the laser beam L to the laser output measurement unit S by adjusting the reflection angle of the laser beam L reflected by the second optical system 163 even if the emission angle of the laser beam L is changed have.

The top substrate etching apparatus according to the present embodiment further includes a stage moving unit 170 connected to the beam transmitting unit 160 and moving the beam transmitting unit 160 in the vacuum chamber 110. The stage moving unit 170 is connected to an inner wall of the vacuum chamber 110 via a support (not shown).

The stage moving unit 170 is arranged such that the beam transfer unit 160 is disposed in a state of avoiding the path of the laser beam L at the time of etching the substrate G, After the substrate G is completed and moved to the standby position, the beam transfer unit 160 is moved to the path of the laser beam L to transfer the laser beam L to the laser output measurement unit S.

In this embodiment, the stage moving unit 170 includes a stage module 171 to which the beam transmission unit 160 is coupled, a drive module 176 for the stage that supports the stage module 171 and moves the stage module 171 ).

A beam transmission unit 160 is coupled to the stage module 171. The stage module 171 according to the present embodiment is provided with the substrate carrier portion 172 described above. Such a substrate carrier portion 172 is disposed at a position spaced apart from the beam transmission unit 160.

The substrate carrier portion 172 and the beam transfer unit 160 are connected to the stage module 171 as described above so that the beam transfer unit 160 and the substrate G are moved together with the movement of the stage module 171. [ do. Therefore, in the etching process for the substrate G, the beam transmitting unit 160 is located at a position to avoid the path of the laser beam L emitted from the laser unit 120, as shown in Fig.

On the other hand, after the etching process for the plate with respect to the substrate G is completed and the substrate G is moved to the standby position, the beam transmitting unit 160 moves the beam transmitting unit 160 Is moved to the path of the laser beam (L) and transfers the laser beam (L) to the laser output measuring unit (S).

The stage drive module 176 supports the stage module 171 and moves the stage module 171. In this embodiment, the stage driving module 176 moves the stage module 171 in a linear motor manner. The stage drive module 176 includes a guide rail (not shown) connected to the stage module 171 to guide the movement of the stage module 171 and a drive unit Hour). Here, the driving unit (not shown) interacts with the first magnetic body (not shown) provided in the stage module 171 so as to generate a driving force by the electromagnetic force in the stage module 171 And a second magnetic body (not shown) disposed along the second magnetic body.

Here, the ferromagnetic body is provided with a permanent magnet and the second magnetic body is provided with an electromagnet.

The top-down type substrate etching apparatus according to the present embodiment is provided between the substrate G and the first chamber window 111 and includes particles separated from the substrate G during the etching process by the laser unit 120, And a particle collecting unit 130 for collecting the particles.

As described above, in the etching process in this embodiment, since the etching operation is performed in a wider area than in the prior art through the plurality of laser units 120, the range in which the particles P are scattered is widened. Therefore, the particle collecting unit 130 used in the present embodiment must have a size capable of covering a wide range, and accordingly, the particle collecting unit 130 has a box shape as shown in Figs. 9 to 11.

The particle collecting unit 130 includes a baffle type particle collecting unit 130 that collides with the falling particles P separated from the substrate G and collects the particles P. [ That is, the particles P falling and separated from the substrate G collide with the baffle type particle collecting unit 130 and are collected in the baffle type particle collecting unit 130.

As described above, in the top-down type substrate etching apparatus according to the present embodiment, the baffle type particle collecting unit 130 is disposed in the lower area of the substrate G and naturally collects the particles P separated and separated from the substrate G, There is no need to install a separate pump or the like for trapping the particles (P), and the structure is simple.

The baffle type particle collecting unit 130 includes a box module 140 having an upper opening and a receiving space formed therein and a box module 140 supported by the box module 140 and disposed in a receiving space, And includes a baffle module 150. The baffle type particle collecting unit 130 also includes a connecting portion (not shown) coupled to the box module 140 and supported by a temperature adjusting unit (not shown) to be described later. The temperature control unit (not shown) and the connection unit (not shown) will be described later for convenience of explanation.

The box module 140 is provided in a box shape and has an upper portion opened and a receiving space formed therein. That is, the box module 140 has a side wall portion extending in the longitudinal direction in the lower wall portion and the lower wall portion, and forms a receiving space through the lower wall portion and the side wall portion.

9 to 11, the box module 140 has a shape similar to a rectangular parallelepiped having a long length and is disposed on the lower side of the machining area of the substrate G to cover a wide area.

A through hole 141 through which the laser beam L passes is formed in the central region of the lower wall of the box module 140. The through hole 141 allows the laser beam L emitted from the laser unit 120 disposed in the lower region of the particle trapping unit 130 in the laser unit to pass through the particle trapping unit 130, So as to reach the substrate G without interference.

The baffle module 150 is disposed in the accommodation space and supported by the box module 140 and collides with the particles P to collect the particles P. [ In the present embodiment, the baffle modules 150 are provided in a pair, and the pair of baffle modules 150 are symmetrically disposed with respect to the through holes 141 and disposed apart from each other.

The baffle module 150 includes a supporting part 151 for the baffle module supported by the box module 140 and a supporting part 151 for supporting the baffle module, And an area enlargement impact portion 152 protruding from the support portion 151 for the baffle module so as to expand the area.

The area enlargement impact portion 152 is supported by the support portion 151 for the baffle module and collides with the particles P. [ The area enlargement collision portion 152 is provided to protrude from the support portion 151 for the baffle module so that the collision area with the particles P relative to the volume of the baffle module 150 is extended.

This area enlargement collision portion 152 includes a first collision plate 153 which is provided so as to protrude by a predetermined length in the longitudinal direction in the support portion 151 for the baffle module. These first collision plates 153 are provided in a plurality of and spaced from one another in the transverse direction.

The area enlargement impact portion 152 further includes a second impingement plate 154 supported by the first impingement plate 153 and provided to protrude by a predetermined length in the transverse direction at the first impingement plate 153 .

The second impact plate 154 is disposed between the first impact plates 153 to further expand the area of impact with the particles P relative to the volume of the baffle module 150. The second impingement plates 154 are provided in a plurality of and spaced apart from each other in the longitudinal direction.

The top-down type substrate etching apparatus according to this embodiment includes the area enlargement impingement portion 152 that expands the area of collision with the particles P relative to the volume of the baffle module 150, Can be improved.

On the other hand, the second impact plate 154 is inclined so that the distance from the one end to the other end becomes smaller with respect to the support 151 for the baffle module. Here, one end of the second collision plate 154 is an end close to the through hole 141 of the box module 140.

As described above, since the through hole 141 is formed in the central area of the box module 140 and the pair of baffle modules 150 are also disposed at the center area of the box module 140 with a predetermined spacing, The baffle type particle collecting unit 130 according to the present embodiment should minimize the movement of the particles P in the direction of the through hole 141 of the box module 140. [

11, the second impact plate 154 is inclined so that the distance from the central portion of the box module 140 to the support portion 151 for the baffle module becomes smaller toward the corner.

The inclined second impact plate 154 can naturally induce the particles P impinging on the second impact plate 154 in the direction of the edge of the box module 140, It is possible to minimize the movement of the falling particles P in the direction of the through hole 141 of the box module 140 by guiding the flow toward the corner of the box module 140. [

The top-down type substrate etching apparatus according to the present embodiment further includes a temperature control unit (not shown) connected to the particle trapping unit 130 to support the particle trapping unit and to vary the temperature of the particle trapping unit 130 .

The temperature control unit (not shown) is connected to a connection unit (not shown) coupled to the box module 140. The temperature regulating unit (not shown) includes a heat exchanging unit (not shown) for exchanging refrigerant (not shown) with the connecting portion (not shown). The temperature control unit (not shown) is connected to a heat exchange unit (not shown) and includes a circulation line (not shown) circulating the refrigerant.

The baffle module 150 is connected to the baffle module 150 through a box module 140 and a connection part (not shown). The connection part (not shown), the box module 140 and the baffle module 150 are made of high- Exchanges heat with the heat exchanging unit (not shown) of the regulating unit (not shown) to cool the baffle module 150.

The temperature of the baffle module 150 can be lowered by the temperature control unit (not shown). The particles P can be easily adsorbed on the surface of the baffle module 150 having a low temperature.

Thus, the top-down type substrate etching apparatus according to the present embodiment includes the temperature control unit (not shown) for varying the temperature of the particle collecting unit 130, thereby lowering the temperature of the particle collecting unit 130, The collection efficiency can be increased.

The top-down type substrate etching apparatus according to the present embodiment includes a protection window (not shown) disposed between the first chamber window 111 and the baffle-type particle trapping unit 130 and shielding the first chamber window 111 And a chamber window protection unit (180).

The protective window (not shown) is a window through which the laser beam L of a specific wavelength can pass, like the first chamber window 111, and is disposed at the upper part of the first chamber window 111, (Mainly particles that have passed through the through-holes 141 of the box module 140) that have not been collected in the first chamber window 130 are prevented from accumulating in the first chamber window 111.

In other words, a very small amount of particles P that have not been trapped in the baffle type particle collecting unit 130 are accumulated in a protective window (not shown), and the user can open the protective window (not shown) in which the particles P are accumulated after a predetermined number of etching processes. Can be replaced with a new protection window (not shown) to reduce cleaning time.

In addition, the top-down type substrate etching apparatus according to the present embodiment is connected to the chamber window protection unit 180 and includes a movable unit for protection unit (not shown) for moving the chamber window protection unit 180 relative to the baffle-type particle collection unit 130 (Not shown).

As described above, since a very small amount of particles P that have not been trapped in the baffle type particle collecting unit 130 are particles P that have passed through the through holes 141 of the box module 140, a protective window (not shown) The particle P accumulated in the box module 140 is densely packed in the form of a band under the through hole 141 of the box module 140. That is, particles P accumulate only in a part of the protective window (not shown).

Therefore, when the chamber window protecting unit 180 shown in FIG. 3 is moved by a predetermined distance in the lateral direction, the particles P stacked in the protective window (not shown) are also moved in the horizontal direction, The laser beam passing through the region where the particles P are not piled can pass through.

When the chamber window protection unit 180 is sequentially moved as described above according to a predetermined number of etching processes, a protection window (not shown) is used until the particles P are accumulated on the entire upper surface of the protection window So that the replacement period of the protection window (not shown) can be increased to shape the productivity.

In the present embodiment, the transfer unit (not shown) for the protection unit is provided with a guide rail 144 for the protection unit, which is supported by the vacuum chamber 110 and is connected to the chamber window protection unit 180 and guides the movement of the chamber window protection unit 180 (Not shown), and a driving unit (not shown) connected to the chamber window protecting unit 180 to move the chamber window protecting unit 180. In the present embodiment, a drive unit for a protection unit (not shown) may be a rack-pinion type, a linear motor type, or the like.

Hereinafter, the operation of the top-down type substrate etching apparatus according to the present embodiment will be described with reference to FIGS. 3 to 8. FIG. 7 and 8, the substrate carrier portion 172 is shown for convenience of description, and the stage module 171 and the stage driving module 176 are not shown.

7, an etching process is performed by irradiating the substrate G with the laser beam L emitted from the laser unit 120, as shown in FIG.

8, the substrate carrier 172 is moved to position the substrate G to the standby position, and the beam transmitting unit 160 is moved and disposed in the path of the laser beam L .

The beam transmitting unit 160 located in the path of the laser beam L transfers the laser beam L emitted from the laser unit 120 to the laser output measuring unit S. [ At this time, the focusing module 161 provided in the beam transmitting unit 160 focuses the laser beam L on the laser output measuring unit S.

The laser output measuring unit S receives the laser beam L from the beam transmitting unit 160 and monitors the output of the laser beam L passed through the vacuum chamber 110.

Thus, the top-down type substrate etching apparatus according to the present embodiment measures the output of the laser beam L passing through the inside of the vacuum chamber 110 through the second chamber window 112 by the laser output measuring unit S, The output of the laser beam L in the vacuum chamber 110, which is the machining area, is monitored to recognize whether the device is malfunctioning, and the generation of defective products can be prevented.

Although the embodiment has been described in detail with reference to the drawings, the scope of the scope of the present embodiment is not limited to the above-described drawings and description.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Accordingly, such modifications or variations are intended to fall within the scope of the appended claims.

110: vacuum chamber 111: first chamber window
112: Second chamber window 130: Particle collecting unit
160: beam transmission unit 161: focusing module
165: transmission unit frame part 162: first optical system
163: second optical system 170: stage moving unit
171: stage module 172: substrate carrier part
176: driving module for the stage 180: chamber window protection unit
S: laser output measuring unit L: laser beam
G: substrate

Claims (11)

A vacuum chamber in which an etching process for the substrate is performed;
A laser unit disposed outside the vacuum chamber and irradiating a laser beam onto the substrate in the vacuum chamber through a first chamber window provided in the vacuum chamber to perform the etching process;
A laser output measuring unit which is disposed outside the vacuum chamber and receives a laser beam passed through the inside of the vacuum chamber through a second chamber window provided in the vacuum chamber and measures an output of the laser beam;
A beam delivery unit disposed within the vacuum chamber and positioned adjacent to the substrate, for delivering the laser beam emitted from the laser unit to the laser output measurement unit; And
And a baffle type particle collecting unit disposed between the substrate and the first chamber window for collecting particles separated from the substrate during an etching process by the laser unit,
The beam transmitting unit includes:
And a focusing module for focusing the laser beam on the laser output measuring unit,
The baffle type particle collecting unit includes:
A box module having an upper portion opened and a receiving space formed therein; And
A baffle module supported by the box module and disposed in the accommodation space, the baffle module colliding with the particles,
Wherein the baffle module comprises:
A support for the baffle module supported by the box module; And
And an area enlargement collision part supported by the support part for the baffle module and projected from the support part for the baffle module so that the particles collide with each other and expand the collision area with the particles,
The area enlargement /
A first collision plate protruding from the support for the baffle module by a predetermined length in the longitudinal direction; And
And a second impingement plate supported on the first impingement plate, the second impingement plate protruding from the first impingement plate by a predetermined length in the transverse direction. The method according to claim 1,
Wherein the laser unit is disposed in a lower region of the vacuum chamber and the laser output measurement unit is disposed in an upper region of the vacuum chamber. delete delete The method according to claim 1,
The focusing module includes:
A first optical system for changing a path of a laser beam emitted from the laser unit; And
And a second optical system disposed apart from the first optical system for transmitting the laser beam changed in the first optical system to the laser output measurement unit. 6. The method of claim 5,
Wherein at least one of the first optical system and the second optical system is provided with a beam focusing section for focusing the laser beam. The method according to claim 6,
Wherein the beam focusing unit includes at least one of a focusing lens unit and a condensing mirror unit. The method according to claim 6,
Each of the first optical system and the second optical system is provided with a first mirror portion and a second mirror portion for reflecting the laser beam,
Wherein at least one of the first optical system and the second optical system includes an angle adjusting unit for adjusting an arrangement angle of the first mirror unit or the second mirror unit. The method according to claim 1,
Further comprising a stage moving unit coupled to the beam delivery unit for moving the beam delivery unit in the vacuum chamber. 10. The method of claim 9,
The stage moving unit includes:
A stage module to which the beam transmitting unit is coupled; And
And a drive module for supporting the stage module and for moving the stage module. 11. The method of claim 10,
Wherein the stage module includes a carrier portion for transferring the substrate.
KR1020160007256A 2016-01-20 2016-01-20 Apparatus for etching substrates KR101782367B1 (en)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100230485B1 (en) * 1993-11-05 1999-11-15 순페이 야마자끼 Semiconductor processing system
KR101493838B1 (en) * 2013-11-26 2015-02-17 포항공과대학교 산학협력단 Microscopy Scanning Photoluminescence.

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100230485B1 (en) * 1993-11-05 1999-11-15 순페이 야마자끼 Semiconductor processing system
KR101493838B1 (en) * 2013-11-26 2015-02-17 포항공과대학교 산학협력단 Microscopy Scanning Photoluminescence.

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