KR20200120790A - Laser apparatus - Google Patents

Abstract

Provided is a laser device which can improve production efficiency. The laser device comprises: a vacuum chamber; a laser module disposed outside the vacuum chamber; a carrier disposed inside the vacuum chamber, and having a target substrate mounted thereon; a chamber window disposed on one side of the vacuum chamber to overlap with the carrier and through which a laser irradiated by the laser module passes; a baffle module disposed between the carrier and the chamber window; a protection member disposed between the chamber window and the baffle module; and a heating module including a heat source disposed adjacent to the protection member, and a reflector disposed outside the heat source.

Description

Laser device {LASER APPARATUS}

The present invention relates to a laser device.

The importance of display devices is increasing with the development of multimedia. Accordingly, various types of display devices such as a liquid crystal display (LCD) and an organic light emitting display (OLED) are used.

Among the display devices, an organic light-emitting display device displays an image by using an organic light emitting diode (OLED) that generates light by recombination of electrons and holes. The OLED display has a fast response speed, high luminance, and a large viewing angle, and can be driven with low power consumption.

The organic light emitting display device can be produced as a product through a pattern formation process, an organic thin film deposition process, an etching process, an encapsulation process, and a bonding process in which a substrate on which an organic thin film has been deposited and a substrate that has undergone the sealing process are attached.

Meanwhile, among various processes, the etching process is a process of obtaining a desired shape by physically or chemically etching, that is, etching an unnecessary portion of the surface of the substrate.

In the etching process, as in semiconductors, various physical or chemical methods are used, for example, a laser etching method may be used. The method of etching a substrate by a laser is widely adopted because it has a simpler structure and can reduce an etching time compared to other methods.

On the other hand, when the etching process is performed by the laser module, particles that are peeled off and dropped from the substrate are loaded on the protective member of the laser device and must be replaced or cleaned. In this case, since the vacuum chamber must be opened for replacement or cleaning, and the etching process must be stopped until the chamber reaches a vacuum state, production efficiency may decrease.

The problem to be solved by the present invention is to provide a laser device capable of improving production efficiency by reducing contamination of the protective member of the laser device and increasing the opening period of the chamber.

The technical problems of the present invention are not limited to the technical problems mentioned above, and other technical problems that are not mentioned will be clearly understood by those skilled in the art from the following description.

The laser device according to an embodiment for solving the above problem is a vacuum chamber,

A laser module disposed outside the vacuum chamber, a carrier disposed inside the vacuum chamber, a carrier on which a target substrate is seated, and disposed on one side of the vacuum chamber so as to overlap the carrier, and the laser irradiated by the laser module passes A chamber window, a baffle module disposed between the carrier and the chamber window, a protection member disposed between the chamber window and the baffle module, a heat source disposed adjacent to the protection member, and a reflector disposed outside the heat source It includes a heating module.

The baffle module may include a first hole passing through the baffle module in a first direction, and the first hole may overlap an irradiation area through which the laser beam irradiated from the laser module passes.

The protection member may include a high temperature region, and the high temperature region may overlap the first hole.

Including a first coating layer and a second coating layer disposed on the protection member, wherein the first coating layer overlaps the high temperature region, and the second coating layer may non-overlap the irradiation region.

A third coating layer disposed on the protection member may be further included, and the third coating layer may overlap the irradiation area.

The protective member may be a protective window through which the laser beam passes, and the high temperature region may overlap an irradiation region through which the laser beam passes, and the heat source may non-overlap the irradiation region.

The protection member is a protection mirror that reflects the laser beam, and the heat source may overlap the high temperature region in a thickness direction.

The baffle module may include a plate and an extension portion protruding from the plate toward the protection member.

The heating module further includes a heat insulating member disposed between the reflector and the baffle module, wherein the heat insulating member passes through the heat insulating member and a second non-overlapping area with an irradiation area through which the laser beam irradiated from the laser module passes. May contain holes.

The heating module may further include a cooling member disposed between the heat insulating member and the baffle module.

The cooling member may directly contact the baffle module.

The cooling member may include a first cooling region disposed under the plate of the baffle module and a second cooling region disposed to surround the extension part.

The heat source may include a side surface facing the protection member, and the reflector may be disposed to cover an upper surface and a lower surface of the heat source, and the other side surface facing the one side surface.

A laser device according to another embodiment for solving the above problem is a vacuum chamber including a first area and a second area in which a processing process for a substrate is performed, as an area excluding the first area, and is disposed in the first area A baffle module to be formed, a protection member disposed in the second region, and a heating module overlapping the baffle module or the protection member, wherein the heating module includes a heat source and a reflector disposed outside the heat source.

The baffle module includes a moving module, and the baffle module may move from the first area to a second area.

The heating module may be disposed under the protection member in the second area.

The protection member may include a moving module, and the protection member may move from the second area to the first area.

The heating module may be disposed below the baffle module in the first area.

The protective member may include a first protective member and a second protective member, the first protective member is disposed in the second region, and the second protective member may move from the second region to the first region. .

The second protection member may be disposed between the baffle module and the heating module.

According to embodiments of the present invention, since the opening period of the chamber can be increased by reducing contamination of the protective member of the laser device, it is possible to improve the production efficiency of the laser device.

The effects according to the present invention are not limited by the contents exemplified above, and more various effects are included in the present specification.

1 is a structural diagram of a laser device according to an embodiment.
2 is a side view of a baffle module and a heating module according to an embodiment.
3 and 4 are cross-sectional views of a heating module according to various embodiments.
5 to 9 are cross-sectional views of a heating module according to various embodiments.
10 is a side view of a baffle module and a heating module according to another embodiment.
11 is a structural diagram of a laser device according to another embodiment.
12 and 13 are structural diagrams of a laser device according to another embodiment.
14 and 15 are structural diagrams of a laser device according to another embodiment.
16 is a structural diagram of a laser device according to another embodiment.
17 is a structural diagram of a laser device according to another embodiment.
18 is a side view of a baffle module and a heating module according to still another embodiment.
19 and 20 are cross-sectional views of a heating module according to various embodiments.
21 to 24 are cross-sectional views of a heating module according to various embodiments.
25 is a side view of a baffle module and a heating module according to another embodiment.
26 is a structural diagram of a laser device according to another embodiment.
27 and 28 are structural diagrams of a laser device according to another embodiment.
29 and 30 are structural diagrams of a laser device according to another embodiment.

Advantages and features of the present invention, and a method of achieving them will become apparent with reference to the embodiments described below in detail together with the accompanying drawings. However, the present invention is not limited to the embodiments to be posted below, but may be implemented in a variety of different forms, and only these embodiments make the posting of the present invention complete, and common knowledge in the technical field to which the present invention pertains. It is provided to completely inform the scope of the invention to those who have, and the invention is only defined by the scope of the claims. The same reference numerals refer to the same components throughout the specification.

Unless otherwise defined, all terms (including technical and scientific terms) used in the present specification may be used as meanings that can be commonly understood by those of ordinary skill in the art to which the present invention belongs. In addition, terms defined in a commonly used dictionary are not interpreted ideally or excessively unless explicitly defined specifically.

When an element or layer is referred to as “on” of another element or layer, it includes all cases in which another layer or another element is interposed directly on or in the middle of another element.

Hereinafter, embodiments will be described with reference to the accompanying drawings. In this specification, the first direction DR1 indicates the Z-axis direction, and the second direction DR2 indicates either the X-axis direction or the Y-axis.

1 is a structural diagram of a laser device according to an embodiment. 2 is a side view of a baffle module and a heating module according to an embodiment. 3 and 4 are cross-sectional views of a heating module according to various embodiments. 5 to 9 are cross-sectional views of a heating module according to various embodiments.

1 to 9, the laser device according to an embodiment includes a vacuum chamber (CH), a carrier (CR), a chamber window (CW), a laser module (LM), a protection window (PW), a baffle module (BF). ), and a heating module (HM).

The vacuum chamber CH may be a space in which an etching process for the substrate OB is performed. 1 schematically shows a part of the vacuum chamber CH. The substrate OB described below is an object to be processed of the laser device according to an exemplary embodiment, and any type of substrate of a display device such as a liquid crystal display device and an organic light emitting display device may be applied.

The carrier CR may be disposed in the vacuum chamber CH. The carrier CR serves to adsorb and move the substrate OB, and may include an electrostatic chuck (not shown) for adsorbing the substrate OB.

The laser module LM may be disposed outside the vacuum chamber CH. The laser module LM irradiates the laser beam L on one surface of the substrate OB in order to process the substrate OB. The laser beam L emitted from the laser module LM passes through the chamber window CW and is irradiated onto the substrate OB, thereby performing an etching process or the like. Although not shown in the drawings, the laser module LM may include a laser unit, a lens, a mirror, a beam expander, a filter, or a scanner.

The chamber window CW may be disposed on the bottom surface of the vacuum chamber CH. The chamber window CW may be made of a transparent material capable of transmitting the laser beam L emitted from the laser module LM. The laser beam L emitted from the laser module LM disposed outside the vacuum chamber CH through the chamber window CW may enter the vacuum chamber CH. The chamber window CW may be made of a quartz material. 1 illustrates a case in which the chamber window CW consists of one window, but the present invention is not limited thereto. That is, the chamber window CW may be formed of a plurality of windows according to the number of laser modules LM.

The protection window PW may be disposed above the chamber window CW in the vacuum chamber CH. Specifically, the protection window PW may be disposed between the carrier CR (or the substrate OB and the chamber window CW). The protection window PW is the vacuum chamber CH through the chamber window CW. The protective window PW may be made of a transparent material capable of transmitting the laser beam L entering the inside of the protective window PW may be made of a quartz material, and may be made of the same material as the chamber window CW. The window PW may play a role of preventing contamination of the chamber window CW from particles P that are peeled off from the substrate OB as the etching process is performed while transmitting the laser beam L. 1 illustrates a case where the protection window PW consists of one window, but is not limited thereto, that is, the protection window PW may be formed of a plurality of windows depending on the number of laser modules LM. The protection window PW may have a circular planar shape as shown in Fig. 3, and may have a rectangular planar shape as shown in Fig. 4. However, the present invention is not limited thereto.

The baffle module BF may be disposed above the protection window PW in the vacuum chamber CH. Specifically, the baffle module BF may be disposed between the carrier CR (or the substrate OB and the protective window PW.) The baffle module BF overlaps the path through which the laser beam L passes. When disposed, the baffle module BF may include a through hole through which the laser beam L passes. A detailed description thereof will be described later.

The baffle module BF may play a role of adsorbing particles P that are peeled off and dropped from the substrate OB as the etching process of the substrate OB is performed. As the baffle module BF adsorbs the particles P, contamination of the protective window PW or the chamber window CW may be reduced. Accordingly, it is possible to prevent a decrease in refraction or transmittance due to the particles P on the protective window PW or the chamber window CW, thereby improving processing quality. In addition, since replacement or cleaning of the protection window PW or the chamber window CW is not required, or the period of opening the vacuum chamber CH for this purpose may be lengthened, the production efficiency of the laser device may be increased. A detailed description of this will be described later.

The heating module HM may be disposed adjacent to the protection window PW in the vacuum chamber CH. The heating module (HM) provides heat to the protection window (PW), and as the etching process proceeds, the heated protection window (PW) even if the particles (P) separated from the substrate (OB) fall to the protection window (PW) side. The particles P may rise again toward the baffle module BF by the heat of and may be adsorbed on the baffle module BF.

Hereinafter, the baffle module BF and the heating module HM will be described in more detail.

For convenience of description in FIGS. 2 to 4, detailed configurations of the baffle module BF and the heating module HM are shown centering on the protection window PW.

Referring to FIG. 2, the heating module HM may include a heat source HT, a reflector RF, and a heat insulating member TI.

The heat source HT may be disposed outside the protection window PW around the protection window PW. That is, the heat source HT may have a predetermined thickness and may be disposed to surround the side surface of the protection window PW. The planar shape of the heat source HT may correspond to the planar shape of the protection window PW. That is, when the protection window PW has a circular shape as shown in FIG. 3, the heat source HT may have a shape of a circular ring having a certain thickness, and the protection window PW has a rectangular shape as shown in FIG. In the case of having, the heat source HT may have a shape of a square frame having a constant thickness. The heat source HT is a heat source of the heating module HM, and may serve to heat the protection window PW by providing heat to the protection window PW. Accordingly, the protection window PW may partially include a region having a different surface temperature. That is, the protection window PW may partially include the high temperature region HA. The high temperature region HA of the protection window PW may have a relatively higher surface temperature than the region of the protection window PW excluding the high temperature region HA. The protective window PW may control the position of the high temperature region HA by partially disposing a coating layer to be described later. For example, by disposing the first coating layer CT1 in a region where the protection window PW overlaps the first hole H1 of the baffle module BF, a high temperature region ( HA) can be located. A detailed description of this will be described later. Particles P peeled off from the substrate OB by the heat of the high temperature region HA may rise again toward the baffle module BF and be adsorbed to the baffle module BF. The high-temperature area HA on the plane may overlap the irradiation area LA where the laser beam L travels. As the heat source HT, heat conduction such as a sheath heater, heat radiation such as a sheath/lamp heater, and a heating method using a laser may be applied.

The reflector RF may be disposed outside the heat source HT around the protection window PW. That is, the heat source HT may be disposed between the protection window PW and the reflector RF. The reflector RF may be disposed to cover the heat source HT. That is, the reflector RF may be disposed so that the heat source HT covers the top surface, the bottom surface, and the other side of the heat source HT, except for one side of the heat source HT facing the protection window PW. The reflector RF may also partially overlap the protection window PW. The reflector RF may serve to reflect heat generated from the heat source HT and transfer it to the protection window PW. To this end, the reflector RF may include a reflective surface that reflects heat. The reflective surface is disposed to face the outer surface of the heat source HT, so that heat emitted from the heat source HT in a direction opposite to the protection window PW can be repeatedly reflected and effectively transmitted to the protection window PW. The reflective surface of the reflector RF is a mirror surface, and may be formed of a flat surface made of a shiny material such as metal or resin.

The heat insulating member TI may be disposed outside the reflector RF around the protection window PW. That is, the reflector RF may be disposed between the heat source HT and the heat insulating member TI. The heat insulating member TI may be directly exposed to the outermost side of the heating module HM. The heat insulating member TI may improve the efficiency of the heating module HM by preventing heat emitted to the outside of the reflector RF from being lost to the outside of the heating module HM. The heat insulating member TI may be formed in a form in which an insulating material is filled inside a stainless steel plate.

The baffle module BF may be disposed on the upper surface of the protection window PW, and when the heat insulation member TI of the heating module HM is disposed on the protection window PW, it will be disposed on the insulation member TI. I can. Since heat generated from the heat source HT may be blocked by the heat insulating member TI, the surface temperature of the baffle module BF may be lower than the surface temperature of the protection window PW. Since the particles P tend to be easily adsorbed at low temperatures, the particles P may be easily adsorbed on the surface of the baffle module BF having a relatively low temperature. Accordingly, it is possible to prevent the particles P re-rising from the protection window PW side toward the first direction DR1 from being reattached to the substrate OB or the like.

The baffle module BF may include a plate BFP1 disposed on the protective window PW or the heat insulating member TI. The plate BFP1 prevents the protective window PW from being contaminated by the particles P. To this end, the plate BFP1 is disposed to cover the protective window PW, and the protective window PW and the first direction are Can be completely overlapped with (DR1).

In addition, the baffle module BF may include an extension part BFP2 from the plate BFP1 toward the other side in the first direction DR1. Specifically, the extension part BFP2 may have a shape protruding from the plate BFP1 toward the protection window PW. Further, the extension part BFP2 may have a shape protruding toward the high temperature region HA of the protection window PW. The extension part BFP2 may have a circular tubular shape, and may include a first hole H1 to be described later as an empty space in the center. The extension part BFP2 may overlap the heat insulating member TI in the second direction DR2. The extension part BFP2 is disposed between the plate BFP1 and the high temperature area HA of the protection window PW, and by adsorbing the particles P, contamination of the protection window PW may be more effectively prevented. That is, even if the particles (P) are not adsorbed from the plate (BFP1) and fall toward the protection window (PW), the particles (P) rise again to the substrate (OB) side by the heat of the high temperature area (HA) of the protection window (PW) can do. In this case, the rising particles P may be adsorbed by the extension part BFP2 of the baffle module BF, and contamination of the protection window PW may be more effectively prevented.

The extension portion BFP2 is a portion extending from the plate BFP1 and may be made of the same material as the plate BFP1.

The heating module HM and the baffle module BF may include a through hole passing through the heating module HM and the baffle module BF in the first direction DR1. Here, the first direction DR1 may be the same as the traveling direction of the laser beam L. The through hole may be a region through which the laser beam L passes. The through hole may include a first hole H1 of the baffle module BF, a second hole H2 of the reflector RF, and a third hole H3 of the heat insulating member TI. The first to third holes H1 to H3 may provide a path through which the laser beam L can cross the baffle module BF and the heating module HM to reach the substrate OB. That is, the first to third holes H1 to H3 may overlap the irradiation area LA of the laser beam L. The first to third holes H1 to H3 may overlap each other, and an area where all of the first to third holes H1 to H3 overlap is the irradiation area LA of the laser beam L. Can be defined.

The first to third holes H1 to H3 may have different inner diameters. For example, the third hole H3 may be smaller than the second hole H2, and the first hole H1 may be smaller than the third hole H3. In this case, the irradiation area LA of the laser beam L may be defined by the first hole H1 having the smallest inner diameter.

Meanwhile, the configuration of the laser device is not limited to FIG. 2. That is, as shown in FIG. 5, the protective window PW may include a coating layer disposed on the protective window PW. The coating layer may include a first coating layer CT1 and a second coating layer CT2. The first coating layer CT1 may be disposed on the upper surface of the protection window PW. The first coating layer CT1 may directly contact the upper surface of the protective window PW. In addition, the first coating layer CT1 may overlap the high temperature region HA of the protection window PW. The first coating layer CT1 may absorb heat emitted from the heat source HT to locally increase the high temperature area HA of the protection window PW. Accordingly, it is possible to prevent thermal deformation of other regions of the protection window PW and increase thermal efficiency by intensively increasing the high temperature region HA. The first coating layer CT1 may be made of a material having a high absorption rate. For example, the first coating layer CT1 may include a resin composition or a metal material. Meanwhile, since the first coating layer CT1 has a low transmittance with respect to the laser beam L, it may not be disposed in the irradiation area LA through which the laser beam L passes. That is, the first coating layer CT1 may not overlap the irradiation area LA. The first coating layer CT1 may be made of a material having a high reflectance, and may be coated by a method such as spin coating, thermal curing, or ultraviolet curing.

The second coating layer CT2 may be disposed on an upper surface, a side surface, and a lower surface of the protection window PW. The second coating layer CT2 may overlap the first coating layer CT1 in the high temperature region HA, and may directly contact the first coating layer CT1. In regions other than the high temperature region HA, the second coating layer CT2 may directly contact the protection window PW. The second coating layer CT2 repeatedly reflects the heat emitted in the opposite direction of the protection window PW to effectively transfer it to the protection window PW, and prevents heat emitted from the heat source HT from being lost to the outside. I can. The second coating layer CT2 may be made of a material having a high reflectance, and may be made of a material different from the first coating layer CT1. The second coating layer CT2 may be coated by a method such as spin coating, thermal curing, or ultraviolet curing.

Meanwhile, since the second coating layer CT2 has a low transmittance with respect to the laser beam L, it may not be disposed in the irradiation area LA through which the laser beam L passes. That is, the second coating layer CT2 may not overlap the irradiation area LA. In addition, since heat emitted from the heat source HT needs to be transferred to the protection window PW, the second coating layer CT2 may not be disposed between the heat source HT and the protection window PW. That is, the second coating layer CT2 may not overlap the heat source HT at the side of the protection window PW. Since the second coating layer CT2 may serve as a reflective surface of the above-described reflector RF, when the second coating layer CT2 is disposed on the protective window PW, the reflector RF and the heat insulating member TI ) May be omitted. However, the present invention is not limited thereto, and when the reflector RF is disposed as illustrated in FIG. 6, one end of the reflector RF may be disposed to be aligned with one end of the second coating layer CT2. Accordingly, heat loss to the outside can be more effectively prevented.

In addition, as shown in FIG. 7, the coating layer may include a third coating layer CT3 and a fourth coating layer CT4. The third coating layer CT3 may be disposed on the upper surface of the protection window PW. The third coating layer CT3 may directly contact the upper surface of the protective window PW. The third coating layer CT3 may overlap the high temperature region HA of the protection window PW. The third coating layer CT3 may absorb heat emitted from the heat source HT to locally increase the high temperature area HA of the protection window PW. Accordingly, it is possible to prevent thermal deformation of other regions of the protection window PW and increase thermal efficiency by intensively increasing the high temperature region HA. The third coating layer CT3 may be made of a material having a high absorption rate. Meanwhile, the third coating layer CT3 may be made of a material having a high transmittance for the laser beam L. Accordingly, the third coating layer CT3 may overlap the irradiation area LA through which the laser beam L passes. The third coating layer CT3 may be formed of a material different from the first coating layer CT1 and the second coating layer CT2. The third coating layer CT3 may be coated by a method such as spin coating, thermal curing, or ultraviolet curing.

The fourth coating layer CT4 may be disposed on the lower surface of the protective window PW. The fourth coating layer CT4 may directly contact the lower surface of the protective window PW. The fourth coating layer CT4 may be made of a material having high transmittance for the laser beam L. Accordingly, the fourth coating layer CT4 may overlap the irradiation area LA through which the laser beam L passes. In addition, the fourth coating layer CT4 may reflect heat and effectively transmit it to the protection window PW, and prevent heat emitted from the heat source HT from being lost to the outside. The fourth coating layer CT4 may overlap the high temperature region HA of the protection window PW in the first direction DR1. The second coating layer CT2 may be omitted in the region where the fourth coating layer CT4 is disposed. The fourth coating layer CT4 may be made of a material having a high reflectance, and may be made of a material different from the first to third coating layers CT1 to CT3. The fourth coating layer CT4 may be coated by a method such as spin coating, thermal curing, or ultraviolet curing.

In addition, as shown in FIG. 8, the heat source HT and the reflector RF may be disposed under the protection window PW. In this case, the second coating layer CT2 may not be disposed on the lower surface of the protective window PW on which the heat source HT and the reflector RF are disposed. That is, the heat source HT and the reflector RF may not overlap the second coating layer CT2 on the lower surface of the protection window PW. In addition, the heat source HT and the reflector RF may be non-overlapping with the irradiation area LA of the laser beam L. In addition, the heat source HT and the reflector RF overlap the high temperature region HA of the protection window PW in the first direction DR1 and overlap the first coating layer CT1 disposed in the high temperature region HA. can do.

In addition, as shown in FIG. 9, the heat source HT may be disposed inside the protection window PW. In this case, since the heat generated from the heat source HT can easily reach the first coating layer CT1 on the protection window PW, the heat can be effectively concentrated in the high temperature area HA of the protection window PW. have.

As shown in FIGS. 8 and 9, when the heat source HT is disposed adjacent to the high temperature region HA of the protection window PW, the heat from the heat source HT to the high temperature region HA of the protection window PW Since the path is shortened to reduce heat lost to the outside, the thermal efficiency of the heating module HM can be improved.

As described above, in the laser device according to an embodiment, the protection window PW is heated by the heating module HM, and the particles P raised by the high temperature area HA of the protection window PW are baffled. By being adsorbed by the module BF, contamination of the protective window PW or the chamber window CW may be reduced. Accordingly, it is possible to prevent a decrease in refraction or transmittance due to the particles P on the protective window PW or the chamber window CW, thereby improving processing quality. In addition, since replacement or cleaning of the protection window PW or the chamber window CW is not required, or the period of opening the vacuum chamber CH for this purpose may be lengthened, the production efficiency of the laser device may be increased.

Hereinafter, other embodiments will be described. In the following embodiments, the same components as those previously described are referred to by the same reference numerals, and redundant descriptions will be omitted or simplified.

10 is a side view of a baffle module and a heating module according to another embodiment. Referring to FIG. 10, the laser device according to the present embodiment is different from the embodiment of FIG. 2 in that it further includes a cooling member CM and a heat transfer member TM.

The cooling member CM may be disposed under the baffle module BF. The cooling member CM may serve to cool the baffle module BF by exchanging heat with the baffle module BF. When the surface temperature of the baffle module BF is lowered by the cooling member CM, the particles P may be easily adsorbed on the surface of the baffle module BF having a relatively low temperature. As the cooling member CM, a heat sink such as copper (Cu) or aluminum (Al) having high thermal conductivity may be applied, or a cooling method using a refrigerant may be applied. In this case, the cooling member CM may include a refrigerant supply device (not shown) and a refrigerant circulation device (not shown). The refrigerant circulation device may be a refrigerant circulation pipe (not shown) or a refrigerant circulation path (not shown).

The cooling member CM includes a first cooling area CMP1 disposed under the plate BFP1 of the baffle module BF and a second cooling area CMP2 disposed under the extension part BFP2 of the baffle module BF. It may include. The first cooling region CMP1 may overlap the plate BFP1 in the first direction DR1, and may directly contact the plate BFP1 to cool the plate BFP1.

The second cooling region CMP2 may be disposed to surround the extension portion BFP2. The second cooling region CMP2 may overlap the extension part BFP2 in the second direction DR2, and may directly contact the extension part BFP2 to cool the extension part BFP2.

On the other hand, unlike FIG. 10, the cooling member CM and the baffle module BF may exchange heat through a separate connection part (not shown) to cool the baffle module BF.

The heat transfer member TM may be disposed between the heat source HT and the protection window PW. The heat transfer member TM may directly contact the heat source HT and the protection window PW. The heat transfer member TM may be made of a material having high thermal conductivity, and may effectively transfer heat generated from the heat source HT to the protection window PW through heat conduction. Accordingly, since heat may be concentrated in the high temperature region HA of the protection window PW, the efficiency of the heating module HM may be improved.

Hereinafter, other embodiments will be described.

11 is a structural diagram of a laser device according to another embodiment. Referring to FIG. 11, the laser device according to the present embodiment is different from the embodiment of FIG. 1 in that it includes a heating laser module HLM as a heat source providing heat to the high temperature area HA of the protection window PW. Do.

The heating laser module HLM may be disposed outside the vacuum chamber CH. The heating laser module HLM irradiates a laser beam L2 to heat the high temperature area HA of the protection window PW. The laser beam L2 emitted from the heating laser module HLM passes through the chamber window CW or the like and is irradiated to the high temperature area HA of the protection window PW, thereby heating the protection window PW. In this case, since the high temperature area HA of the protection window PW can be locally heated, thermal deformation of the protection window PW and peripheral members of the protection window PW, for example, a baffle module BF, etc. Can effectively prevent thermal deformation of the Meanwhile, FIG. 11 illustrates a case in which the laser module LM and the heating laser module HLM irradiate the laser beams L1 and L2 into the vacuum chamber CH through the same chamber window CW, but this is limited. It does not become. That is, the chamber window (CW) may be composed of a plurality of windows, and the laser beam (L1) irradiated from the laser module (LM) and the laser beam (L2) irradiated from the heating laser module (HLM) are chambers of different windows. Through the window CW, it may enter into the vacuum chamber CH.

Hereinafter, other embodiments will be described.

12 and 13 are structural diagrams of a laser device according to another embodiment. Specifically, FIG. 12 shows a point in time when the laser beam L is irradiated from the laser module LM and the etching process proceeds, and FIG. 13 shows a point in time when the etching process is finished. 12 and 13, the laser device according to the present embodiment is different from the embodiment of FIG. 1 in that the baffle module BF_M can move in the vacuum chamber CH.

The vacuum chamber CH may include a first region A1 and a second region A2 excluding the first region A1. A carrier CR and a chamber window CW may be disposed in the second area A2 of the vacuum chamber CH. That is, an etching process for the substrate OB may be performed in the second region A2 of the vacuum chamber CH. Specifically, as shown in FIG. 12, the laser beam L is emitted from the laser module LM in the second area A2 and irradiated onto the substrate OB to perform an etching process. In this case, the heating module HM is disposed in the second region A2, but the heating module HM may not operate while the etching process is in progress. That is, since the protection window PW is not heated by the heating module HM, the protection window PW may not include the high temperature region HA. Also, the baffle module BF_M may be disposed in the first area A1. That is, the baffle module BF_M may be non-overlapping in the first direction DR1 with the configuration of the protection window PW and the heating module HM disposed in the second area A2. As the etching process proceeds, the particles P peeled off from the substrate OB may descend toward the protective window PW and may be loaded on one surface of the protective window PW. As shown in FIG. 13, when the etching process is finished, the baffle module BF_M disposed in the first area A1 moves to the second area A2, and the particles loaded on the protection window PW ( P) can be adsorbed. In this case, the heating module HM disposed in the second area A2 operates to heat the protection window PW, thereby forming a high temperature area HA in the protection window PW, and the baffle module BF_M The silver may move to overlap the high temperature area HA of the protection window PW. The baffle module BF_M may include a moving module (not shown) such as a roller or rail for moving from the first area A1 to the second area A2.

As described above, when the baffle module (BF_M) moves from the first area (A1) to the second area (A2), the heating module (HM) is only while adsorbing the particles (P) by the baffle module (BF_M). The time to operate and heat the protection window PW may be shortened. Accordingly, it is possible to minimize thermal deformation of the protection window PW.

Hereinafter, other embodiments will be described.

14 and 15 are structural diagrams of a laser device according to another embodiment. Specifically, FIG. 14 shows a time point at which the laser beam L is irradiated from the laser module LM and the etching process proceeds, and FIG. 15 shows a time point at which the etching process ends. 14 and 15, the laser device according to the present exemplary embodiment is different from the exemplary embodiments of FIGS. 12 and 13 in that the protective window PW_M can move in the vacuum chamber CH.

As shown in FIG. 14, when the etching process is performed in the second region A2, the protective window PW_M is disposed in the second region A2, and the particles P peeled off from the substrate OB are It may be loaded on one surface of the protection window PW_M.

The heating module HM is disposed in the first region A1, and the heating module HM may not operate while the etching process is in progress. The baffle module BF may be disposed above the heating module HM in the first area A1. That is, the heating module HM and the baffle module BF may not overlap with the protection window PW_M in the first direction DR1.

As illustrated in FIG. 15, when the etching process is finished, the protection window PW_M disposed in the second region A2 may move to the first region A1. The protection window PW_M may move to the first area A1 and may be disposed between the baffle module BF and the heating module HM. When the protection window PW_M is disposed on the heating module HM, the heating module HM operates to heat the protection window PW_M, thereby forming a high temperature region HA on the protection window PW_M. , The particles P loaded on the protection window PW_M may rise toward the baffle module BF and be adsorbed to the baffle module BF. The protection window PW_M may include a moving module (not shown) such as a roller or rail for moving from the second area A2 to the first area A1.

As described above, when the protection window PW_M moves from the second area A2 to the first area A1, the protection window PW_M is removed only while the particles P are removed from the first area A1. The heating module HM is operated, so that the time for heating the protection window PW_M may be shortened. Accordingly, thermal deformation of the protection window PW_M can be minimized.

Hereinafter, other embodiments will be described.

16 is a structural diagram of a laser device according to another embodiment. 16 illustrates a point in time at which an etching process is performed by irradiating a laser beam L from the laser module LM. Referring to FIG. 16, it is different from the embodiment of FIG. 14 in that a first protection window PW1 and a second protection window PW2 are included as protection windows.

The first protection window PW1 and the second protection window PW2 may move between the first area A1 and the second area A2, and may include a moving module (not shown) for this purpose.

As shown in FIG. 16, when the etching process is performed, the first protection window PW1 may be disposed in the second area A2, and the second protection window PW2 may be disposed in the first area A1. have. When the etching process is performed through the first protection window PW1, the first protection window PW1 may be disposed between the substrate OB and the chamber window CW. In this case, the particles P peeled off the substrate OB may be disposed on one surface of the first protective window PW1. When the etching process proceeds through the first protection window PW1 and the first protection window PW1 is contaminated, the first protection window PW1 moves from the second area A2 to the first area A1 Particles P may be removed by the baffle module BF.

While the etching process is performed through the first protection window PW1, the second protection window PW2 may be disposed between the baffle module BF and the heating module HM. The second protection window PW2 may be a protection window in which an etching process is performed before the etching process is performed through the first protection window PW1, and may be a protection window contaminated with particles P by the etching process. . The second protective window PW2 may be heated by the heating module HM, and the particles P loaded on one surface of the second protective window PW2 may be adsorbed by the baffle module BF. The cleaned second protection window PW2 moves from the first area A1 to the second area A2 again to perform an etching process through the second protection window PW2, and the contaminated first protection window PW1 ) May be moved from the second area A2 to the first area A1 and cleaned like the second protection window PW2 shown in FIG. 16.

As described above, when the first protection window PW1 and the second protection window PW2 are moved between the first area A1 and the second area A2 to alternately perform an etching process and are cleaned, the etching process Since it can be performed continuously, the production efficiency can be further improved.

Hereinafter, other embodiments will be described.

17 is a structural diagram of a laser device according to another embodiment. 18 is a side view of a baffle module and a heating module according to still another embodiment. 18 is a side view of a baffle module and a heating module according to still another embodiment. 19 and 20 are cross-sectional views of a heating module according to various embodiments. 21 to 24 are cross-sectional views of a heating module according to various embodiments.

17 to 24, the laser device according to the present exemplary embodiment is different from the exemplary embodiment of FIG. 1 in that it includes a protective mirror PM and a reflective member RM instead of the protective window PW.

The protective mirror PM may be disposed under the baffle module BF in the vacuum chamber CH. The protective mirror (PM) reflects the laser beam (L) emitted from the laser module (LM) and at the same time, as the etching process is performed, the chamber window (CW) is contaminated from the particles P that are separated from the substrate OB and fall. It can play a role in preventing it from becoming.

The reflective member RM reflects the laser beam L emitted from the laser module LM and provides it to the protective mirror PM, and the laser beam L provided as the protective mirror PM is provided by the protective mirror PM. It is reflected and irradiated to the substrate OB, so that the etching process may proceed. The reflective member RM may be disposed on the path of the laser beam L in the vacuum chamber CH. The reflective member RM may be made of the same material as the protective mirror PM. 16 illustrates a case in which the laser device includes one reflective member RM, but is not limited thereto. That is, depending on the path of the laser beam L, a plurality of reflective members RM may be included, and the reflective member RM may be omitted.

The protective mirror PM may have a circular planar shape as shown in FIG. 18, and may have a rectangular planar shape as shown in FIG. 19. However, it is not limited thereto.

The heat source HT of the heating module HM may serve to heat the protective mirror PM, and the protective mirror PM may include a high temperature region HA in its center. The high temperature region HA of the protective mirror PM may have a relatively higher surface temperature than the region of the protective mirror PM excluding the high temperature region HA. Particles P peeled off from the substrate OB by the heat of the high temperature region HA may rise again toward the baffle module BF and be adsorbed to the baffle module BF.

The heat source HT may be disposed to overlap the protective mirror PM in the first direction DR1. Specifically, the heat source HT may be disposed so as to overlap the high temperature region HA of the protective mirror PM. In this case, since the heat source HT may completely overlap with the high temperature area HA of the protective mirror PM, the heat emitted from the heat source HT can be effectively transferred to the high temperature area HA of the protective mirror PM. I can.

Also, the heat source HT may be disposed outside the irradiation area LA of the laser beam L. That is, the heat source HT may not overlap with the irradiation area LA of the laser beam L. The planar shape of the heat source HT may correspond to the planar shape of the protective mirror PM. That is, when the protective mirror PM has a circular shape as shown in FIG. 19, the heat source HT may have a circular ring shape having a constant thickness, and the protective mirror PM has a rectangular shape as shown in FIG. If so, the heat source HT may have a shape of a square frame having a constant thickness.

The heating module HM and the baffle module BF may include a through hole penetrating the heating module HM and the baffle module BF in the first direction DR1 or the second direction DR2. Here, the first direction DR1 is the same as the direction in which the laser beam L is reflected from the protective mirror PM and proceeds, and in the second direction DR2, the laser beam L is reflected from the reflective member RM. It can be the same as the direction of progress. The through-hole includes a first hole H1 of the baffle module BF, a second hole H2 of the reflector RF, a third hole H3 and a fourth hole H4 of the heat insulating member TI. I can. The fourth hole H4 may provide a path through which the laser beam L can be reflected from the reflective member RM to cross the heating module HM and reach the protective mirror PM. In addition, in the first to third holes H1 to H3, the laser beam L is reflected from the protective mirror PM to cross the baffle module BF and the heating module HM to reach the substrate OB. You can provide a path to do it. That is, the first to fourth holes H1 to H4 may overlap the irradiation area LA of the laser beam L. Also, the first to fourth holes H1 to H4 may overlap the high temperature region HA of the protective mirror PM. The first to fourth holes H1 to H4 may have different inner diameters. For example, the third hole H3 and the fourth hole H4 may be smaller than the second hole H2, and the first hole H1 is less than the third hole H3 and the fourth hole H4. It can be small. In this case, the irradiation area LA of the laser beam L may be defined by the first hole H1 having the smallest inner diameter.

As described above, when the laser device includes the protective mirror PM, the heat source HT may completely overlap with the high temperature region HA of the protective mirror PM. Accordingly, since the heat emitted from the heat source HT can be effectively transferred to the high temperature region HA of the protective mirror PM, the efficiency of the heating module HM can be improved.

Meanwhile, the configuration of the heating module HM is not limited to FIG. 18. That is, as shown in FIG. 21, a coating layer disposed on the protective mirror PM may be included. The coating layer may include a first coating layer CT1 and a second coating layer CT2. The first coating layer CT1 may be disposed on the upper surface of the protective mirror PM. The first coating layer CT1 may directly contact the upper surface of the protective mirror PM. Also, the first coating layer CT1 may overlap the high temperature region HA of the protective mirror PM.

The first coating layer CT1 may absorb heat emitted from the heat source HT to locally increase the high temperature area HA of the protective mirror PM. Accordingly, thermal deformation of other regions of the protective mirror PM can be prevented, and the high temperature region HA can be intensively high-temperature, thereby increasing thermal efficiency. In addition, the first coating layer CT1 may be disposed in the irradiation area LA where the laser beam L is reflected. That is, the first coating layer CT1 may overlap the irradiation area LA. Since the first coating layer CT1 has been described with reference to FIG. 5, overlapping content will be omitted.

The second coating layer CT2 may be disposed on an upper surface, a side surface, and a lower surface of the protective mirror PM. The second coating layer CT2 may overlap the first coating layer CT1 in the high temperature region HA, and may directly contact the first coating layer CT1. In regions other than the high temperature region HA, the second coating layer CT2 may directly contact the protective mirror PM. The second coating layer CT2 may prevent heat emitted from the heat source HT from being lost to the outside. In addition, the second coating layer CT2 may be made of a material having a high reflectance for the laser beam L, and the second coating layer CT2 may be disposed in the irradiation area LA where the laser beam L is reflected. . That is, the second coating layer CT2 may overlap the irradiation area LA. In addition, since heat emitted from the heat source HT must be transferred to the protective mirror PM, the second coating layer CT2 may not be disposed between the heat source HT and the protective mirror PM. That is, the second coating layer CT2 may not overlap the heat source HT at the side of the protective mirror PM. As shown in FIG. 21, when the coating layer is disposed on the protective mirror PM, the reflector RF and the heat insulating member TI disposed on the outer surface of the heat source HT may be omitted.

In addition, as shown in FIG. 22, the heat source HT and the reflector RF may be disposed under the protective mirror PM. In this case, the second coating layer CT2 may not be disposed on the lower surface of the protective mirror PM on which the heat source HT and the reflector RF are disposed. That is, the heat source HT and the reflector RF may not overlap the second coating layer CT2 on the lower surface of the protective mirror PM. In addition, the heat source HT and the reflector RF may overlap the irradiation area LA of the laser beam L in the first direction DR1. In addition, the heat source HT and the reflector RF overlap the high temperature region HA of the protective mirror PM in the first direction DR1 and overlap the first coating layer CT1 disposed in the high temperature region HA. can do.

In addition, as shown in FIG. 23, the heat source HT may be disposed inside the protective mirror PM. In this case, since the heat generated from the heat source HT can easily reach the first coating layer CT1 on the protective mirror PM, heat can be effectively concentrated in the high temperature region HA of the protective mirror PM. have.

In addition, as shown in FIG. 24, a heat transfer member TM including a fifth coating layer CT5 disposed on the first coating layer CT1 and disposed between the heat source HT and the protective mirror PM It may further include.

The fifth coating layer CT5 overlaps the first coating layer CT1 in the thickness direction, and may directly contact the first coating layer CT1. The fifth coating layer CT5 may not overlap with the second coating layer CT2 in the thickness direction. The fifth coating layer CT5 may serve to reflect the laser beam L, and may be made of a material having high reflectivity for the laser beam L. The fifth coating layer CT5 may be formed of a material different from the first to fourth coating layers CT1 to CT4.

The heat transfer member TM may directly contact the heat source HT and the protective mirror PM. The heat transfer member TM may be made of a material having high thermal conductivity, and may effectively transfer heat generated from the heat source HT to the protective mirror PM through heat conduction. Accordingly, since heat may be concentrated in the high temperature region HA of the protective mirror PM, the efficiency of the heating module HM may be improved.

Hereinafter, other embodiments will be described.

25 is a side view of a baffle module and a heating module according to another embodiment. Referring to FIG. 25, the laser device according to the present embodiment is different from the embodiment of FIG. 18 in that it further includes a cooling member CM disposed under the baffle module BF.

The cooling member CM may serve to cool the baffle module BF by exchanging heat with the baffle module BF. When the surface temperature of the baffle module BF is lowered by the cooling member CM, the particles P may be easily adsorbed on the surface of the baffle module BF having a relatively low temperature.

The cooling member CM includes a first cooling area CMP1 disposed under the plate BFP1 of the baffle module BF and a second cooling area CMP2 disposed under the extension part BFP2 of the baffle module BF. It may include. The first cooling region CMP1 may overlap the plate BFP1 in the first direction DR1, and may directly contact the plate BFP1 to cool the plate BFP1.

The second cooling region CMP2 may be disposed to surround the extension portion BFP2. The second cooling region CMP2 may overlap the extension part BFP2 in the second direction DR2, and may directly contact the extension part BFP2 to cool the extension part BFP2.

Meanwhile, unlike FIG. 25, the baffle module BF may be cooled by exchanging heat between the cooling member CM and the baffle module BF through separate connecting portions (not shown). Since the cooling member CM has been described with reference to FIG. 10, overlapping content will be omitted.

Hereinafter, other embodiments will be described.

26 is a structural diagram of a laser device according to another embodiment. Referring to FIG. 26, the laser device according to the present embodiment is different from the embodiment of FIG. 17 in that it includes a heating laser module HLM as a heat source providing heat to the high temperature area HA of the protective mirror PM. Do.

The heating laser module HLM may be disposed outside the vacuum chamber CH. The heating laser module HLM irradiates the laser beam L2 to heat the high temperature area HA of the protective mirror PM. The laser beam L2 emitted from the heating laser module HLM passes through the second chamber window CW2 and is irradiated to the high temperature area HA of the protection mirror PM, thereby heating the protection mirror PM. In this case, since the high-temperature area HA of the protective mirror PM can be locally heated, thermal deformation of the protective mirror PM and thermal deformation of the peripheral member, for example, the baffle module BF, are effectively prevented. can do.

Meanwhile, in FIG. 25, the laser beam L1 emitted from the laser module LM passes through the first chamber window CW1, and the laser beam L2 emitted from the heating laser module HLM is the second chamber window ( CW2) is passed through the example to enter the vacuum chamber CH, but is not limited thereto. That is, the laser beam L1 irradiated by the laser module LM and the laser beam L2 irradiated by the heating laser module HLM may pass through the same chamber window and enter the vacuum chamber CH. Since the heating laser module (HLM) has been described with reference to FIG. 11, overlapping content will be omitted.

Hereinafter, other embodiments will be described.

27 and 28 are structural diagrams of a laser device according to another embodiment. FIG. 27 shows a point in time when the laser beam L is irradiated from the laser module LM and the etching process proceeds, and FIG. 28 shows a point in time when the etching process is finished. Referring to FIGS. 27 and 28, the laser device according to the present exemplary embodiment is different from the exemplary embodiment of FIG. 17 in that the baffle module BF_M can move in the vacuum chamber CH.

The vacuum chamber CH may include a first region A1 and a second region A2 excluding the first region A1. A carrier CR, a chamber window CW, and a reflective member RM may be disposed in the second area A2 of the vacuum chamber CH. That is, an etching process for the substrate OB may be performed in the second region A2 of the vacuum chamber CH. Specifically, as shown in FIG. 27, the laser beam L is emitted from the laser module LM in the second area A2 and irradiated onto the substrate OB to perform an etching process. In this case, the heating module HM is disposed in the second region A2, but the heating module HM may not operate while the etching process is in progress. That is, since the protection mirror PM is not heated by the heating module HM, the protection mirror PM may not include the high temperature region HA. Also, the baffle module BF_M may be disposed in the first area A1. That is, the baffle module BF_M may be non-overlapping in the first direction DR1 with the configuration of the protective mirror PM, the reflective member RM, and the heating module HM disposed in the second area A2. have. As the etching process proceeds, the particles P peeled off from the substrate OB may descend toward the protective mirror PM to be loaded on one surface of the protective mirror PM. As shown in FIG. 28, when the etching process is finished, the baffle module BF_M disposed in the first region A1 moves to the second region A2 and particles loaded on the protective mirror PM ( P) can be adsorbed. In this case, the heating module HM disposed in the second area A2 operates to heat the protection mirror PM, thereby forming a high temperature area HA in the protection mirror PM, and the baffle module BF_M The silver may move to overlap the high temperature area HA of the protective mirror PM. The baffle module BF_M may include a moving module (not shown) such as a roller or rail for moving from the first area A1 to the second area A2.

As described above, when the baffle module (BF_M) moves from the first area (A1) to the second area (A2), the heating module (HM) is only while adsorbing the particles (P) by the baffle module (BF_M) By operating, the time to heat the protective mirror PM can be shortened. Accordingly, thermal deformation of the protective mirror PM and peripheral members may be minimized.

Hereinafter, other embodiments will be described.

29 and 30 are structural diagrams of a laser device according to another embodiment. Specifically, FIG. 29 shows a point in time when the laser beam L is irradiated from the laser module LM and the etching process proceeds, and FIG. 30 shows a point in time when the etching process is finished. Referring to FIGS. 29 and 30, the laser device according to the present exemplary embodiment is different from the exemplary embodiments of FIGS. 27 and 28 in that the protective mirror PM_M can move in the vacuum chamber CH.

As shown in FIG. 29, when the etching process is performed in the second area A2, the protective mirror PM_M is disposed in the second area A2, and the particles P peeled off from the substrate OB are It may be mounted on one surface of the protective mirror PM_M.

The heating module HM is disposed in the first region A1, and the heating module HM may not operate while the etching process is in progress. The baffle module BF may be disposed above the heating module HM in the first area A1. That is, the heating module HM and the baffle module BF may not overlap with the protection mirror PM_M in the first direction DR1.

As illustrated in FIG. 15, when the etching process is finished, the protective mirror PM_M disposed in the second region A2 may move to the first region A1. The protective mirror PM_M may move to the first area A1 and may be disposed between the baffle module BF and the heating module HM. A protection mirror (PM_M) is disposed on the heating module (HM), and the heating module (HM) operates to heat the protection mirror (PM_M), thereby forming a high temperature region (HA) in the protection mirror (PM_M) The particles P loaded on the (PM_M) may rise toward the baffle module BF and be adsorbed to the baffle module BF. The protective mirror PM_M may include a moving module (not shown) such as a roller or rail for moving from the second area A2 to the first area A1.

As described above, when the protection mirror PM_M moves from the second area A2 to the first area A1, the protection mirror PM_M is only while the particles P are removed from the first area A1. The heating module HM is operated so that the time for heating the protective mirror PM_M may be shortened. Accordingly, thermal deformation of the protective mirror PM_M and peripheral members may be minimized.

Embodiments of the present invention have been described above with reference to the accompanying drawings, but those of ordinary skill in the art to which the present invention pertains can be implemented in other specific forms without changing the technical spirit or essential features of the present invention. You can understand. Therefore, it should be understood that the embodiments described above are illustrative in all respects and not limiting.

CH: vacuum chamber
CW: Chamber window
LM: laser module
BF: baffle module
PW: protection window
PM: protective mirror
HM: heating module
HT: heater
RF: reflector
TI: Insulation member
CM: cooling member
CT1: first coating layer
CT2: second coating layer

Claims (20)

Vacuum chamber;
A laser module disposed outside the vacuum chamber;
A carrier disposed inside the vacuum chamber and on which a target substrate is mounted;
A chamber window disposed on one side of the vacuum chamber so as to overlap with the carrier and through which the laser irradiated by the laser module passes;
A baffle module disposed between the carrier and the chamber window;
A protection member disposed between the chamber window and the baffle module, and
A laser device comprising a heating module including a heat source disposed adjacent to the protection member and a reflector disposed outside the heat source. The method of claim 1,
The baffle module includes a first hole penetrating the baffle module in a first direction,
The first hole overlaps an irradiation area through which the laser beam irradiated from the laser module passes. The method of claim 2,
The protection member includes a high-temperature region, and the high-temperature region overlaps the first hole. The method of claim 3,
Including a first coating layer and a second coating layer disposed on the protection member,
The first coating layer overlaps the high temperature region,
The second coating layer is a laser device non-overlapping with the irradiation area. The method of claim 4,
The laser device further includes a third coating layer disposed on the protection member, wherein the third coating layer overlaps the irradiation area. The method of claim 3,
The protection member is a protection window through which the laser beam passes,
The high temperature region overlaps with the irradiation region through which the laser beam passes,
The heat source is a laser device that does not overlap with the irradiation area. The method of claim 3,
The protective member is a protective mirror reflecting the laser beam,
The heat source overlaps the high-temperature region in a thickness direction. The method of claim 1,
The baffle module includes a plate and an extension portion protruding from the plate toward the protection member. The method of claim 8,
The heating module further includes a heat insulating member disposed between the reflector and the baffle module,
The heat insulating member includes a second hole passing through the heat insulating member and non-overlapping with an irradiation area through which the laser beam irradiated from the laser module passes. The method of claim 9,
The heating module further comprises a cooling member disposed between the heat insulating member and the baffle module. The method of claim 10,
The cooling member is a laser device in direct contact with the baffle module. The method of claim 11,
The cooling member includes a first cooling region disposed under a plate of the baffle module and a second cooling region disposed to surround the extension part. The method of claim 1,
The heat source includes one side facing the protection member,
The reflector is a laser device disposed to cover an upper surface, a lower surface of the heat source, and the other side surface opposite to the one side surface. A vacuum chamber including a first region and a second region excluding the first region and in which a substrate processing process is performed;
A baffle module disposed in the first area;
A protection member disposed in the second area; And
Including a heating module overlapping with the baffle module or the protection member,
The heating module includes a heat source and a reflector disposed outside the heat source. The method of claim 14,
The baffle module includes a moving module,
The baffle module is a laser device that moves from the first area to the second area. The method of claim 15,
The heating module is a laser device disposed under the protection member in the second area. The method of claim 14,
The protection member includes a moving module,
The protective member is a laser device that moves from the second area to the first area. The method of claim 17,
The heating module is a laser device disposed below the baffle module in the first area. The method of claim 14,
The protection member includes a first protection member and a second protection member,
The first protection member is disposed in the second region,
The second protection member moves from the second area to the first area. The method of claim 19,
The second protection member is a laser device disposed between the baffle module and the heating module.

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