KR101765348B1 - 패턴화된 층들에 대한 향상된 민감도를 위한 광학적 결함 증폭 - Google Patents
패턴화된 층들에 대한 향상된 민감도를 위한 광학적 결함 증폭 Download PDFInfo
- Publication number
- KR101765348B1 KR101765348B1 KR1020127004026A KR20127004026A KR101765348B1 KR 101765348 B1 KR101765348 B1 KR 101765348B1 KR 1020127004026 A KR1020127004026 A KR 1020127004026A KR 20127004026 A KR20127004026 A KR 20127004026A KR 101765348 B1 KR101765348 B1 KR 101765348B1
- Authority
- KR
- South Korea
- Prior art keywords
- inspection
- layer
- target
- test
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
- Y10T428/24521—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness with component conforming to contour of nonplanar surface
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US22626009P | 2009-07-16 | 2009-07-16 | |
| US61/226,260 | 2009-07-16 | ||
| PCT/US2010/042148 WO2011008964A1 (en) | 2009-07-16 | 2010-07-15 | Optical defect amplification for improved sensitivity on patterned layers |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20120037010A KR20120037010A (ko) | 2012-04-18 |
| KR101765348B1 true KR101765348B1 (ko) | 2017-08-08 |
Family
ID=43449792
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020127004026A Active KR101765348B1 (ko) | 2009-07-16 | 2010-07-15 | 패턴화된 층들에 대한 향상된 민감도를 위한 광학적 결함 증폭 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8705027B2 (enExample) |
| JP (1) | JP2012533737A (enExample) |
| KR (1) | KR101765348B1 (enExample) |
| IL (1) | IL216974A0 (enExample) |
| WO (1) | WO2011008964A1 (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10317347B2 (en) | 2013-11-01 | 2019-06-11 | Kla-Tencor Corp. | Determining information for defects on wafers |
| US9599573B2 (en) | 2014-12-02 | 2017-03-21 | Kla-Tencor Corporation | Inspection systems and techniques with enhanced detection |
| WO2016103286A1 (en) * | 2014-12-24 | 2016-06-30 | Datalogic Ip Tech S.R.L. | System and method for identifying the presence or absence of transparent pills in blister packer machines using high resolution 3d stereo reconstruction based on color linear cameras |
| US9870612B2 (en) * | 2016-06-06 | 2018-01-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for repairing a mask |
| US10249546B2 (en) * | 2016-07-20 | 2019-04-02 | Kla-Tencor Corporation | Reverse decoration for defect detection amplification |
| TWI728197B (zh) | 2016-10-24 | 2021-05-21 | 美商克萊譚克公司 | 整合至一計量及/或檢測工具中之製程模組 |
| US10795270B2 (en) * | 2017-08-25 | 2020-10-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Methods of defect inspection |
| US10615067B2 (en) * | 2018-05-18 | 2020-04-07 | Kla-Tencor Corporation | Phase filter for enhanced defect detection in multilayer structure |
| US11092893B2 (en) | 2018-12-10 | 2021-08-17 | Kla Corporation | Inspection sensitivity improvements for optical and electron beam inspection |
| TWI753739B (zh) * | 2021-01-08 | 2022-01-21 | 閎康科技股份有限公司 | 物性分析方法、物性分析試片及其製備方法 |
| US12066763B2 (en) * | 2021-02-04 | 2024-08-20 | Kla Corporation | Sensitivity improvement of optical and SEM defection inspection |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008082999A (ja) * | 2006-09-29 | 2008-04-10 | Hitachi Ltd | 基板表面の欠陥検査方法及び欠陥検査装置 |
| US20080311283A1 (en) * | 2007-06-15 | 2008-12-18 | Qimonda Ag | Method of Inspecting and Manufacturing an Integrated Circuit |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5834345A (ja) * | 1981-08-25 | 1983-02-28 | Fujitsu Ltd | レジスト膜パタ−ンの検査方法 |
| JPS61161796A (ja) * | 1985-01-10 | 1986-07-22 | 富士通株式会社 | プリント基板の導体パタ−ンの表面処理方法 |
| JPH02190705A (ja) * | 1989-01-20 | 1990-07-26 | Hitachi Ltd | 外観検査方法 |
| DE4310025A1 (de) * | 1993-03-27 | 1994-09-29 | Boehringer Mannheim Gmbh | Vorrichtung zur lateral aufgelösten Untersuchung einer lateral heterogenen ultradünnen Objektschicht |
| JPH09115973A (ja) * | 1995-10-16 | 1997-05-02 | Nec Corp | 異物検査方法 |
| JPH1012681A (ja) * | 1996-06-21 | 1998-01-16 | Fujitsu Ltd | 層間の空隙の検出方法 |
| EP0973069A3 (en) * | 1998-07-14 | 2006-10-04 | Nova Measuring Instruments Limited | Monitoring apparatus and method particularly useful in photolithographically processing substrates |
| AU5597000A (en) * | 1999-06-07 | 2000-12-28 | Regents Of The University Of California, The | Coatings on reflective mask substrates |
| JP3729156B2 (ja) * | 2002-06-07 | 2005-12-21 | 株式会社日立製作所 | パターン欠陥検出方法およびその装置 |
| US7969564B2 (en) | 2002-10-03 | 2011-06-28 | Applied Materials Israel, Ltd. | System and method for defect localization on electrical test structures |
| DE10301931A1 (de) * | 2003-01-19 | 2004-07-29 | Massen, Robert, Prof. Dr.-Ing. | Automatische optische Oberflächeninspektion von farbig gemusterten Oberflächen, welche mit einer transparenten Schutzschicht versehen sind |
| JP4778755B2 (ja) * | 2005-09-09 | 2011-09-21 | 株式会社日立ハイテクノロジーズ | 欠陥検査方法及びこれを用いた装置 |
| JP4496164B2 (ja) * | 2005-12-21 | 2010-07-07 | 株式会社神戸製鋼所 | 熱弾性特性測定装置、熱弾性特性測定方法 |
| US7791055B2 (en) | 2006-07-10 | 2010-09-07 | Micron Technology, Inc. | Electron induced chemical etching/deposition for enhanced detection of surface defects |
| DE102007028800B4 (de) * | 2007-06-22 | 2016-11-03 | Advanced Mask Technology Center Gmbh & Co. Kg | Maskensubstrat, Photomaske und Verfahren zur Herstellung einer Photomaske |
-
2010
- 2010-07-15 US US13/384,330 patent/US8705027B2/en active Active
- 2010-07-15 WO PCT/US2010/042148 patent/WO2011008964A1/en not_active Ceased
- 2010-07-15 JP JP2012520785A patent/JP2012533737A/ja active Pending
- 2010-07-15 KR KR1020127004026A patent/KR101765348B1/ko active Active
-
2011
- 2011-12-14 IL IL216974A patent/IL216974A0/en active IP Right Grant
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008082999A (ja) * | 2006-09-29 | 2008-04-10 | Hitachi Ltd | 基板表面の欠陥検査方法及び欠陥検査装置 |
| US20080311283A1 (en) * | 2007-06-15 | 2008-12-18 | Qimonda Ag | Method of Inspecting and Manufacturing an Integrated Circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| US8705027B2 (en) | 2014-04-22 |
| JP2012533737A (ja) | 2012-12-27 |
| WO2011008964A1 (en) | 2011-01-20 |
| KR20120037010A (ko) | 2012-04-18 |
| US20120113416A1 (en) | 2012-05-10 |
| IL216974A0 (en) | 2012-02-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101765348B1 (ko) | 패턴화된 층들에 대한 향상된 민감도를 위한 광학적 결함 증폭 | |
| US10634623B2 (en) | Phase contrast monitoring for extreme ultra-violet (EUV) masks defect inspection | |
| US6327035B1 (en) | Method and apparatus for optically examining miniature patterns | |
| US9645093B2 (en) | System and method for apodization in a semiconductor device inspection system | |
| US9335206B2 (en) | Wave front aberration metrology of optics of EUV mask inspection system | |
| US8555214B2 (en) | Technique for analyzing a reflective photo-mask | |
| JP2012533737A5 (enExample) | ||
| US9607833B2 (en) | System and method for photomask particle detection | |
| JP2010536034A (ja) | ウエハーを検査するように構成される装置 | |
| CN115032205A (zh) | 反射型掩模体的缺陷检测方法及缺陷检测系统 | |
| US9400424B2 (en) | Method of repairing a mask | |
| JPH11354404A (ja) | ブランクスおよび反射型マスクの検査方法および検査装置 | |
| US20250314958A1 (en) | Contaminant identification metrology system, lithographic apparatus, and methods thereof | |
| JPH11219891A (ja) | マスクの検査方法および装置 | |
| Meshulach et al. | Advanced lithography: wafer defect scattering analysis at DUV | |
| CN114895524B (zh) | Euv光掩模体的缺陷检测方法及系统 | |
| US6919146B2 (en) | Planar reticle design/fabrication method for rapid inspection and cleaning | |
| Liddle et al. | Photon tunneling microscopy of latent resist images | |
| US20050250019A1 (en) | Mask device for photolithography and application thereof | |
| Bareket et al. | Next-generation lithography mask inspection | |
| CN117850179A (zh) | 一种波带片离轴成像检测装置 | |
| JP2007294791A (ja) | 近接場露光に用いられる被露光物の形成方法、近接場露光方法及び近接場露光方法による素子の製造方法 | |
| Estroff | Plasmonic Materials For Use In Alternative Approaches To DUV Nanolithography | |
| Lee et al. | Methodical approach to improve defect detection sensitivity on lithography process using DUV inspection system | |
| KR20080073179A (ko) | 다층구조체의 결함검사장치 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
St.27 status event code: A-0-1-A10-A15-nap-PA0105 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| R17-X000 | Change to representative recorded |
St.27 status event code: A-3-3-R10-R17-oth-X000 |
|
| R17-X000 | Change to representative recorded |
St.27 status event code: A-3-3-R10-R17-oth-X000 |
|
| A201 | Request for examination | ||
| PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| P22-X000 | Classification modified |
St.27 status event code: A-2-2-P10-P22-nap-X000 |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
|
| E13-X000 | Pre-grant limitation requested |
St.27 status event code: A-2-3-E10-E13-lim-X000 |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| E90F | Notification of reason for final refusal | ||
| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
St.27 status event code: A-1-2-D10-D22-exm-PE0701 |
|
| PR0701 | Registration of establishment |
St.27 status event code: A-2-4-F10-F11-exm-PR0701 |
|
| PR1002 | Payment of registration fee |
St.27 status event code: A-2-2-U10-U12-oth-PR1002 Fee payment year number: 1 |
|
| PG1601 | Publication of registration |
St.27 status event code: A-4-4-Q10-Q13-nap-PG1601 |
|
| PN2301 | Change of applicant |
St.27 status event code: A-5-5-R10-R13-asn-PN2301 St.27 status event code: A-5-5-R10-R11-asn-PN2301 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 4 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 5 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 6 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 7 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 8 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 9 |