KR101751663B1 - 전자 빔 시스템을 이용한 관심 영역들의 검사 - Google Patents

전자 빔 시스템을 이용한 관심 영역들의 검사 Download PDF

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KR101751663B1
KR101751663B1 KR1020167021872A KR20167021872A KR101751663B1 KR 101751663 B1 KR101751663 B1 KR 101751663B1 KR 1020167021872 A KR1020167021872 A KR 1020167021872A KR 20167021872 A KR20167021872 A KR 20167021872A KR 101751663 B1 KR101751663 B1 KR 101751663B1
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South Korea
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charged particle
interest
regions
substrate
scanning
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Korean (ko)
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KR20160108458A (ko
Inventor
벤지온 센더
알론 리트만
Original Assignee
어플라이드 머티리얼즈 이스라엘 리미티드
어플라이드 머티어리얼스, 인코포레이티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/261—Details
    • H01J37/265—Controlling the tube; circuit arrangements adapted to a particular application not otherwise provided, e.g. bright-field-dark-field illumination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20221—Translation
    • H01J2237/20228—Mechanical X-Y scanning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
KR1020167021872A 2014-01-13 2015-01-12 전자 빔 시스템을 이용한 관심 영역들의 검사 Active KR101751663B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/153,923 US9466462B2 (en) 2014-01-13 2014-01-13 Inspection of regions of interest using an electron beam system
US14/153,923 2014-01-13
PCT/US2015/011050 WO2015106212A1 (en) 2014-01-13 2015-01-12 Inspection of regions of interest using an electron beam system

Publications (2)

Publication Number Publication Date
KR20160108458A KR20160108458A (ko) 2016-09-19
KR101751663B1 true KR101751663B1 (ko) 2017-06-27

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ID=53521944

Family Applications (1)

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KR1020167021872A Active KR101751663B1 (ko) 2014-01-13 2015-01-12 전자 빔 시스템을 이용한 관심 영역들의 검사

Country Status (5)

Country Link
US (1) US9466462B2 (enExample)
JP (1) JP6722114B2 (enExample)
KR (1) KR101751663B1 (enExample)
TW (1) TWI603364B (enExample)
WO (1) WO2015106212A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9847209B2 (en) 2014-01-13 2017-12-19 Applied Materials Israel Ltd. Inspection of regions of interest using an electron beam system
US10054551B2 (en) 2016-04-20 2018-08-21 Applied Materials Israel Ltd. Inspection system and method for inspecting a sample by using a plurality of spaced apart beams
US10541104B2 (en) 2015-07-09 2020-01-21 Applied Materials Israel Ltd. System and method for scanning an object with an electron beam using overlapping scans and electron beam counter-deflection

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015191543A1 (en) * 2014-06-10 2015-12-17 Applied Materials Israel, Ltd. Scanning an object using multiple mechanical stages
US10288409B2 (en) * 2015-04-01 2019-05-14 Applied Materials Israel Ltd. Temperature sensitive location error compensation
US9881765B2 (en) * 2016-04-20 2018-01-30 Applied Materials Israel Ltd. Method and system for scanning an object
US10388489B2 (en) 2017-02-07 2019-08-20 Kla-Tencor Corporation Electron source architecture for a scanning electron microscopy system
JP7043587B2 (ja) * 2017-09-07 2022-03-29 エーエスエムエル ネザーランズ ビー．ブイ． 荷電粒子の複数のビームを用いたサンプル検査の方法
CN111527581B (zh) * 2017-09-29 2023-11-14 Asml荷兰有限公司 利用多个带电粒子束检查样品的方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009507352A (ja) 2005-09-06 2009-02-19 カール・ツァイス・エスエムティー・アーゲー 荷電粒子検査方法及び荷電粒子システム
US20090242761A1 (en) 2008-03-31 2009-10-01 Hermes-Microvision, Inc. Method and apparatus for charged particle beam inspection
JP4997076B2 (ja) 2007-11-22 2012-08-08 株式会社日立ハイテクノロジーズ 荷電粒子線装置、及び荷電粒子線装置における画像生成方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3148353B2 (ja) * 1991-05-30 2001-03-19 ケーエルエー・インストルメンツ・コーポレーション 電子ビーム検査方法とそのシステム
JP3601382B2 (ja) 1998-11-17 2004-12-15 株式会社日立製作所 荷電粒子線を用いた検査装置および検査方法
JP4034500B2 (ja) 2000-06-19 2008-01-16 株式会社日立製作所 半導体装置の検査方法及び検査装置、及びそれを用いた半導体装置の製造方法
JP2004227886A (ja) * 2003-01-22 2004-08-12 Hitachi High-Technologies Corp 走査電子顕微鏡
KR101487359B1 (ko) * 2006-01-25 2015-01-29 가부시키가이샤 에바라 세이사꾸쇼 시료 표면 검사방법 및 검사장치
JP5037850B2 (ja) 2006-04-28 2012-10-03 株式会社アドバンテスト 電子ビーム露光装置
TWI415161B (zh) * 2009-03-31 2013-11-11 Hermes Microvision Inc 帶電粒子束成像系統與於連續移動平台上陣列掃描一試片以進行該試片帶電粒子束成像的方法
WO2011102511A1 (ja) 2010-02-22 2011-08-25 株式会社日立ハイテクノロジーズ 回路パターン検査装置
JP2012150065A (ja) * 2011-01-21 2012-08-09 Hitachi High-Technologies Corp 回路パターン検査装置およびその検査方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009507352A (ja) 2005-09-06 2009-02-19 カール・ツァイス・エスエムティー・アーゲー 荷電粒子検査方法及び荷電粒子システム
JP4997076B2 (ja) 2007-11-22 2012-08-08 株式会社日立ハイテクノロジーズ 荷電粒子線装置、及び荷電粒子線装置における画像生成方法
US20090242761A1 (en) 2008-03-31 2009-10-01 Hermes-Microvision, Inc. Method and apparatus for charged particle beam inspection

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9847209B2 (en) 2014-01-13 2017-12-19 Applied Materials Israel Ltd. Inspection of regions of interest using an electron beam system
US10541104B2 (en) 2015-07-09 2020-01-21 Applied Materials Israel Ltd. System and method for scanning an object with an electron beam using overlapping scans and electron beam counter-deflection
US10054551B2 (en) 2016-04-20 2018-08-21 Applied Materials Israel Ltd. Inspection system and method for inspecting a sample by using a plurality of spaced apart beams

Also Published As

Publication number Publication date
JP6722114B2 (ja) 2020-07-15
WO2015106212A1 (en) 2015-07-16
JP2017504175A (ja) 2017-02-02
US9466462B2 (en) 2016-10-11
TW201528317A (zh) 2015-07-16
KR20160108458A (ko) 2016-09-19
TWI603364B (zh) 2017-10-21
US20150200071A1 (en) 2015-07-16

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