KR101716367B1 - Cu2ZnSnS4 나노 입자들 - Google Patents

Cu2ZnSnS4 나노 입자들 Download PDF

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KR101716367B1
KR101716367B1 KR1020157029348A KR20157029348A KR101716367B1 KR 101716367 B1 KR101716367 B1 KR 101716367B1 KR 1020157029348 A KR1020157029348 A KR 1020157029348A KR 20157029348 A KR20157029348 A KR 20157029348A KR 101716367 B1 KR101716367 B1 KR 101716367B1
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znsns
nanoparticles
temperature
precursor
tin
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KR20150126966A (ko
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나탈리 그레스티
옴베르타 마살라
제임스 해리스
나이젤 피켓
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나노코 테크놀로지스 리미티드
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G19/00—Compounds of tin
    • C01G19/006—Compounds containing tin, with or without oxygen or hydrogen, and containing two or more other elements
    • H01L31/1828—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/128—Active materials comprising only Group I-II-IV-VI kesterite materials, e.g. Cu2ZnSnSe4 or Cu2ZnSnS4
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
    • H10F77/1433—Quantum dots
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/84—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by UV- or VIS- data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/88—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by thermal analysis data, e.g. TGA, DTA, DSC
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Powder Metallurgy (AREA)
  • Luminescent Compositions (AREA)
KR1020157029348A 2013-03-15 2014-03-14 Cu2ZnSnS4 나노 입자들 Active KR101716367B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361798084P 2013-03-15 2013-03-15
US61/798,084 2013-03-15
PCT/IB2014/001118 WO2014140889A2 (en) 2013-03-15 2014-03-14 Cu2znsns4 nanoparticles

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KR20150126966A KR20150126966A (ko) 2015-11-13
KR101716367B1 true KR101716367B1 (ko) 2017-03-14

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US (2) US9206054B2 (enExample)
EP (1) EP2994418B1 (enExample)
JP (2) JP6138288B2 (enExample)
KR (1) KR101716367B1 (enExample)
CN (1) CN105164047B (enExample)
HK (1) HK1215239A1 (enExample)
WO (1) WO2014140889A2 (enExample)

Families Citing this family (6)

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US10453978B2 (en) 2015-03-12 2019-10-22 International Business Machines Corporation Single crystalline CZTSSe photovoltaic device
CN105226131B (zh) * 2015-08-24 2017-09-29 中国工程物理研究院材料研究所 一种铜锌锡硫吸收层薄膜的化学合成方法
US9935214B2 (en) 2015-10-12 2018-04-03 International Business Machines Corporation Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation
CN106629820B (zh) * 2016-09-09 2019-05-24 武汉理工大学 Cu2ZnSnS4纳米晶材料的可控制备方法
JP7365069B2 (ja) * 2018-08-16 2023-10-19 ノースウェスタン ユニバーシティ 多元素ヘテロ構造ナノ粒子およびその製造方法
CN113044813B (zh) * 2019-12-26 2022-06-10 温州大学 一种铜锌锡硒纳米晶及其合成方法

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US20110056564A1 (en) * 2008-05-09 2011-03-10 Korgel Brian A Nanoparticles and methods of making and using
JP5649072B2 (ja) * 2009-02-27 2015-01-07 国立大学法人名古屋大学 半導体ナノ粒子及びその製法
US20120055554A1 (en) * 2009-05-21 2012-03-08 E.I. Du Pont De Nemours And Company Copper zinc tin chalcogenide nanoparticles
WO2010138636A2 (en) * 2009-05-26 2010-12-02 Purdue Research Foundation Synthesis of multinary chalcogenide nanoparticles comprising cu, zn, sn, s, and se
EP2504276A1 (en) * 2009-11-25 2012-10-03 E. I. du Pont de Nemours and Company Aqueous process for producing crystalline copper chalcogenide nanoparticles, the nanoparticles so-produced, and inks and coated substrates incorporating the nanoparticles
JP2013512306A (ja) * 2009-11-25 2013-04-11 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー ＣＺＴＳ／Ｓｅ前駆体インクとＣＺＴＳ／Ｓｅ薄フィルムおよびＣＺＴＳ／Ｓｅ系光電池の製造方法
CN101830445B (zh) * 2009-12-15 2014-12-10 河南大学 一种以乙酰丙酮盐为原料合成无机纳米晶的方法
KR101144738B1 (ko) * 2009-12-28 2012-05-24 재단법인대구경북과학기술원 박막형 태양전지의 제조방법
US20120067408A1 (en) * 2010-09-16 2012-03-22 Solexant Corp. Sintered CZTS Nanoparticle Solar Cells
KR20140015280A (ko) * 2010-11-22 2014-02-06 이 아이 듀폰 디 네모아 앤드 캄파니 반도체 잉크, 피막, 코팅된 기재 및 제조방법
US20130233202A1 (en) * 2010-12-03 2013-09-12 Ei Du Pont De Nemours And Company Inks and processes for preparing copper indium gallium sulfide/selenide coatings and films
CN102108540B (zh) * 2010-12-27 2012-07-25 中国科学院长春光学精密机械与物理研究所 合成单分散多元化合物纳米晶的方法
JP2012250889A (ja) * 2011-06-06 2012-12-20 Toyota Motor Corp 半導体粒子及びその製造方法
JP5884945B2 (ja) * 2013-03-07 2016-03-15 株式会社村田製作所 化合物半導体超微粒子、超微粒子薄膜及び光電変換デバイス

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Also Published As

Publication number Publication date
CN105164047A (zh) 2015-12-16
JP6623192B2 (ja) 2019-12-18
HK1215239A1 (zh) 2016-08-19
JP2017206431A (ja) 2017-11-24
JP6138288B2 (ja) 2017-05-31
KR20150126966A (ko) 2015-11-13
US20140273337A1 (en) 2014-09-18
WO2014140889A3 (en) 2015-01-08
EP2994418B1 (en) 2021-02-17
JP2016515990A (ja) 2016-06-02
CN105164047B (zh) 2019-03-15
US20150376026A1 (en) 2015-12-31
WO2014140889A2 (en) 2014-09-18
EP2994418A2 (en) 2016-03-16
US9359222B2 (en) 2016-06-07
US9206054B2 (en) 2015-12-08

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