JP6138288B2 - Ｃｕ２ＺｎＳｎＳ４ナノ粒子 - Google Patents

Ｃｕ２ＺｎＳｎＳ４ナノ粒子 Download PDF

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Publication number
JP6138288B2
JP6138288B2 JP2015562392A JP2015562392A JP6138288B2 JP 6138288 B2 JP6138288 B2 JP 6138288B2 JP 2015562392 A JP2015562392 A JP 2015562392A JP 2015562392 A JP2015562392 A JP 2015562392A JP 6138288 B2 JP6138288 B2 JP 6138288B2
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temperature
nanoparticles
tin
precursor
copper
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Japanese (ja)
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JP2016515990A (ja
JP2016515990A5 (enExample
Inventor
グレスティ，ナタリー
マサラ，オンブレッタ
ハリス，ジェームス
ピケット，ナイジェル
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Nanoco Technologies Ltd
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Nanoco Technologies Ltd
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G19/00—Compounds of tin
    • C01G19/006—Compounds containing tin, with or without oxygen or hydrogen, and containing two or more other elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/128—Active materials comprising only Group I-II-IV-VI kesterite materials, e.g. Cu2ZnSnSe4 or Cu2ZnSnS4
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
    • H10F77/1433—Quantum dots
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/84—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by UV- or VIS- data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/88—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by thermal analysis data, e.g. TGA, DTA, DSC
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Powder Metallurgy (AREA)
  • Luminescent Compositions (AREA)
JP2015562392A 2013-03-15 2014-03-14 Ｃｕ２ＺｎＳｎＳ４ナノ粒子 Active JP6138288B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361798084P 2013-03-15 2013-03-15
US61/798,084 2013-03-15
PCT/IB2014/001118 WO2014140889A2 (en) 2013-03-15 2014-03-14 Cu2znsns4 nanoparticles

Related Child Applications (1)

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JP2017085335A Division JP6623192B2 (ja) 2013-03-15 2017-04-24 Ｃｕ２ＺｎＳｎＳ４ナノ粒子

Publications (3)

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JP2016515990A JP2016515990A (ja) 2016-06-02
JP2016515990A5 JP2016515990A5 (enExample) 2016-10-27
JP6138288B2 true JP6138288B2 (ja) 2017-05-31

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JP2015562392A Active JP6138288B2 (ja) 2013-03-15 2014-03-14 Ｃｕ２ＺｎＳｎＳ４ナノ粒子
JP2017085335A Expired - Fee Related JP6623192B2 (ja) 2013-03-15 2017-04-24 Ｃｕ２ＺｎＳｎＳ４ナノ粒子

Family Applications After (1)

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JP2017085335A Expired - Fee Related JP6623192B2 (ja) 2013-03-15 2017-04-24 Ｃｕ２ＺｎＳｎＳ４ナノ粒子

Country Status (7)

Country Link
US (2) US9206054B2 (enExample)
EP (1) EP2994418B1 (enExample)
JP (2) JP6138288B2 (enExample)
KR (1) KR101716367B1 (enExample)
CN (1) CN105164047B (enExample)
HK (1) HK1215239A1 (enExample)
WO (1) WO2014140889A2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10453978B2 (en) 2015-03-12 2019-10-22 International Business Machines Corporation Single crystalline CZTSSe photovoltaic device
CN105226131B (zh) * 2015-08-24 2017-09-29 中国工程物理研究院材料研究所 一种铜锌锡硫吸收层薄膜的化学合成方法
US9935214B2 (en) 2015-10-12 2018-04-03 International Business Machines Corporation Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation
CN106629820B (zh) * 2016-09-09 2019-05-24 武汉理工大学 Cu2ZnSnS4纳米晶材料的可控制备方法
JP7365069B2 (ja) * 2018-08-16 2023-10-19 ノースウェスタン ユニバーシティ 多元素ヘテロ構造ナノ粒子およびその製造方法
CN113044813B (zh) * 2019-12-26 2022-06-10 温州大学 一种铜锌锡硒纳米晶及其合成方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110056564A1 (en) * 2008-05-09 2011-03-10 Korgel Brian A Nanoparticles and methods of making and using
JP5649072B2 (ja) * 2009-02-27 2015-01-07 国立大学法人名古屋大学 半導体ナノ粒子及びその製法
US20120055554A1 (en) * 2009-05-21 2012-03-08 E.I. Du Pont De Nemours And Company Copper zinc tin chalcogenide nanoparticles
WO2010138636A2 (en) * 2009-05-26 2010-12-02 Purdue Research Foundation Synthesis of multinary chalcogenide nanoparticles comprising cu, zn, sn, s, and se
EP2504276A1 (en) * 2009-11-25 2012-10-03 E. I. du Pont de Nemours and Company Aqueous process for producing crystalline copper chalcogenide nanoparticles, the nanoparticles so-produced, and inks and coated substrates incorporating the nanoparticles
JP2013512306A (ja) * 2009-11-25 2013-04-11 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー ＣＺＴＳ／Ｓｅ前駆体インクとＣＺＴＳ／Ｓｅ薄フィルムおよびＣＺＴＳ／Ｓｅ系光電池の製造方法
CN101830445B (zh) * 2009-12-15 2014-12-10 河南大学 一种以乙酰丙酮盐为原料合成无机纳米晶的方法
KR101144738B1 (ko) * 2009-12-28 2012-05-24 재단법인대구경북과학기술원 박막형 태양전지의 제조방법
US20120067408A1 (en) * 2010-09-16 2012-03-22 Solexant Corp. Sintered CZTS Nanoparticle Solar Cells
KR20140015280A (ko) * 2010-11-22 2014-02-06 이 아이 듀폰 디 네모아 앤드 캄파니 반도체 잉크, 피막, 코팅된 기재 및 제조방법
US20130233202A1 (en) * 2010-12-03 2013-09-12 Ei Du Pont De Nemours And Company Inks and processes for preparing copper indium gallium sulfide/selenide coatings and films
CN102108540B (zh) * 2010-12-27 2012-07-25 中国科学院长春光学精密机械与物理研究所 合成单分散多元化合物纳米晶的方法
JP2012250889A (ja) * 2011-06-06 2012-12-20 Toyota Motor Corp 半導体粒子及びその製造方法
JP5884945B2 (ja) * 2013-03-07 2016-03-15 株式会社村田製作所 化合物半導体超微粒子、超微粒子薄膜及び光電変換デバイス

Also Published As

Publication number Publication date
CN105164047A (zh) 2015-12-16
JP6623192B2 (ja) 2019-12-18
HK1215239A1 (zh) 2016-08-19
JP2017206431A (ja) 2017-11-24
KR20150126966A (ko) 2015-11-13
US20140273337A1 (en) 2014-09-18
WO2014140889A3 (en) 2015-01-08
EP2994418B1 (en) 2021-02-17
JP2016515990A (ja) 2016-06-02
CN105164047B (zh) 2019-03-15
US20150376026A1 (en) 2015-12-31
WO2014140889A2 (en) 2014-09-18
EP2994418A2 (en) 2016-03-16
US9359222B2 (en) 2016-06-07
US9206054B2 (en) 2015-12-08
KR101716367B1 (ko) 2017-03-14

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