KR101711687B1 - 일체형 한정 링 배열 및 그 방법 - Google Patents

일체형 한정 링 배열 및 그 방법 Download PDF

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Publication number
KR101711687B1
KR101711687B1 KR1020127007783A KR20127007783A KR101711687B1 KR 101711687 B1 KR101711687 B1 KR 101711687B1 KR 1020127007783 A KR1020127007783 A KR 1020127007783A KR 20127007783 A KR20127007783 A KR 20127007783A KR 101711687 B1 KR101711687 B1 KR 101711687B1
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integral
ring arrangement
confined chamber
conductance path
gas conductance
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KR20120088687A (ko
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라진더 딘드사
라자라마난 칼리아나라만
사티아나라야난 마니
과탐 바타차리야
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램 리써치 코포레이션
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020127007783A 2009-09-28 2010-09-27 일체형 한정 링 배열 및 그 방법 Active KR101711687B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US24652609P 2009-09-28 2009-09-28
US61/246,526 2009-09-28
PCT/US2010/050401 WO2011038344A2 (en) 2009-09-28 2010-09-27 Unitized confinement ring arrangements and methods thereof

Publications (2)

Publication Number Publication Date
KR20120088687A KR20120088687A (ko) 2012-08-08
KR101711687B1 true KR101711687B1 (ko) 2017-03-02

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Country Link
US (2) US20110073257A1 (https=)
EP (1) EP2484185A4 (https=)
JP (2) JP5792174B2 (https=)
KR (1) KR101711687B1 (https=)
CN (1) CN102656952B (https=)
SG (2) SG178371A1 (https=)
TW (1) TWI567818B (https=)
WO (1) WO2011038344A2 (https=)

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US20130059448A1 (en) * 2011-09-07 2013-03-07 Lam Research Corporation Pulsed Plasma Chamber in Dual Chamber Configuration
CN103854943B (zh) * 2012-11-30 2016-05-04 中微半导体设备(上海)有限公司 一种用于等离子体处理腔室的约束环及腔室清洁方法
CN103906336A (zh) * 2014-04-14 2014-07-02 中国科学院工程热物理研究所 压力温度可调的气体放电等离子体发生装置
CN105789008B (zh) * 2014-12-22 2017-12-19 中微半导体设备(上海)有限公司 等离子体处理装置及等离子体刻蚀方法
KR102552776B1 (ko) 2015-11-30 2023-07-10 (주)아모레퍼시픽 miRNA를 포함하는 흑색종 전이 억제용 조성물
US9953843B2 (en) * 2016-02-05 2018-04-24 Lam Research Corporation Chamber for patterning non-volatile metals
GB201603581D0 (en) * 2016-03-01 2016-04-13 Spts Technologies Ltd Plasma processing apparatus
JP7296829B2 (ja) * 2019-09-05 2023-06-23 東京エレクトロン株式会社 プラズマ処理装置、処理方法、上部電極構造
CN112713075B (zh) * 2019-10-25 2024-03-12 中微半导体设备(上海)股份有限公司 等离子体隔离环、等离子体处理装置与基片处理方法
CN113745081B (zh) * 2020-05-27 2024-03-12 中微半导体设备(上海)股份有限公司 一种隔离环组件、等离子体处理装置及处理方法
CN113808900B (zh) * 2020-06-17 2023-09-29 中微半导体设备(上海)股份有限公司 一种等离子体处理装置及其约束环组件与方法
CN114639585B (zh) * 2020-12-16 2025-02-14 中微半导体设备(上海)股份有限公司 约束环组件、等离子处理装置及其排气控制方法
CN115881506B (zh) * 2023-03-02 2023-06-27 深圳市新凯来技术有限公司 等离子体调节装置及半导体刻蚀设备
USD1109284S1 (en) 2024-06-07 2026-01-13 Asm Ip Holding B.V. Flow control ring

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JP2000058298A (ja) * 1998-08-06 2000-02-25 Foi:Kk プラズマリアクタ
JP2003318163A (ja) * 2002-04-25 2003-11-07 Toshiba Corp プラズマ処理装置及びプラズマ処理方法
WO2009100289A2 (en) * 2008-02-08 2009-08-13 Lam Research Corporation Methods and apparatus for changing area ratio in a plasma processing system

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JP3535309B2 (ja) * 1996-04-10 2004-06-07 東京エレクトロン株式会社 減圧処理装置
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JP5029041B2 (ja) * 2007-01-30 2012-09-19 Ｔｄｋ株式会社 プラズマｃｖｄ装置、及び、薄膜製造方法
KR101577474B1 (ko) * 2008-02-08 2015-12-14 램 리써치 코포레이션 플라즈마 프로세싱 장치용 rf 리턴 스트랩

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JP2000058298A (ja) * 1998-08-06 2000-02-25 Foi:Kk プラズマリアクタ
JP2003318163A (ja) * 2002-04-25 2003-11-07 Toshiba Corp プラズマ処理装置及びプラズマ処理方法
WO2009100289A2 (en) * 2008-02-08 2009-08-13 Lam Research Corporation Methods and apparatus for changing area ratio in a plasma processing system

Also Published As

Publication number Publication date
WO2011038344A3 (en) 2011-07-28
KR20120088687A (ko) 2012-08-08
SG10201405469WA (en) 2014-10-30
TW201133607A (en) 2011-10-01
EP2484185A2 (en) 2012-08-08
TWI567818B (zh) 2017-01-21
EP2484185A4 (en) 2014-07-23
CN102656952B (zh) 2016-10-12
JP5792174B2 (ja) 2015-10-07
JP2013506301A (ja) 2013-02-21
US20110073257A1 (en) 2011-03-31
US20150325414A1 (en) 2015-11-12
JP6204940B2 (ja) 2017-09-27
CN102656952A (zh) 2012-09-05
WO2011038344A2 (en) 2011-03-31
SG178371A1 (en) 2012-03-29
JP2015201653A (ja) 2015-11-12

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