KR101696354B1 - 뱃치의 기판들을 처리하기 위한 원자층 퇴적 반응기 및 그 방법 - Google Patents

뱃치의 기판들을 처리하기 위한 원자층 퇴적 반응기 및 그 방법 Download PDF

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KR101696354B1
KR101696354B1 KR1020167023912A KR20167023912A KR101696354B1 KR 101696354 B1 KR101696354 B1 KR 101696354B1 KR 1020167023912 A KR1020167023912 A KR 1020167023912A KR 20167023912 A KR20167023912 A KR 20167023912A KR 101696354 B1 KR101696354 B1 KR 101696354B1
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South Korea
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substrates
batch
processing
module
carriage
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KR20160105548A (ko
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스벤 린드포르스
페카 제이. 소이니넨
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피코순 오와이
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C30/00—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
    • H01L31/1876—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/137—Batch treatment of the devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y02P70/521—

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Photovoltaic Devices (AREA)
KR1020167023912A 2011-11-22 2011-11-22 뱃치의 기판들을 처리하기 위한 원자층 퇴적 반응기 및 그 방법 Active KR101696354B1 (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/FI2011/051017 WO2013076347A1 (en) 2011-11-22 2011-11-22 An atomic layer deposition reactor for processing a batch of substrates and method thereof

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020147016100A Division KR20140096365A (ko) 2011-11-22 2011-11-22 뱃치의 기판들을 처리하기 위한 원자층 퇴적 반응기 및 그 방법

Publications (2)

Publication Number Publication Date
KR20160105548A KR20160105548A (ko) 2016-09-06
KR101696354B1 true KR101696354B1 (ko) 2017-01-23

Family

ID=48469186

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020147016100A Ceased KR20140096365A (ko) 2011-11-22 2011-11-22 뱃치의 기판들을 처리하기 위한 원자층 퇴적 반응기 및 그 방법
KR1020167023912A Active KR101696354B1 (ko) 2011-11-22 2011-11-22 뱃치의 기판들을 처리하기 위한 원자층 퇴적 반응기 및 그 방법

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KR1020147016100A Ceased KR20140096365A (ko) 2011-11-22 2011-11-22 뱃치의 기판들을 처리하기 위한 원자층 퇴적 반응기 및 그 방법

Country Status (10)

Country Link
US (1) US20140335267A1 (cg-RX-API-DMAC7.html)
EP (1) EP2783023B1 (cg-RX-API-DMAC7.html)
JP (1) JP5927305B2 (cg-RX-API-DMAC7.html)
KR (2) KR20140096365A (cg-RX-API-DMAC7.html)
CN (1) CN103946418A (cg-RX-API-DMAC7.html)
IN (1) IN2014DN04032A (cg-RX-API-DMAC7.html)
RU (1) RU2586956C2 (cg-RX-API-DMAC7.html)
SG (1) SG11201402372TA (cg-RX-API-DMAC7.html)
TW (1) TWI555874B (cg-RX-API-DMAC7.html)
WO (1) WO2013076347A1 (cg-RX-API-DMAC7.html)

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JP2627789B2 (ja) 1988-09-07 1997-07-09 本田技研工業株式会社 複数ベアリングの同時圧入装置
SG11201509725WA (en) 2013-06-27 2015-12-30 Picosun Oy Anti-counterfeit signature
JP6346022B2 (ja) * 2013-07-31 2018-06-20 京セラ株式会社 薄膜形成方法および太陽電池素子の製造方法
JP7037551B2 (ja) * 2016-09-16 2022-03-16 ピコサン オーワイ 原子層堆積のための装置および方法
RU172394U1 (ru) * 2017-01-13 2017-07-06 Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский университет "Московский институт электронной техники" Устройство для атомно-слоевого осаждения
RU2752059C1 (ru) * 2020-07-14 2021-07-22 Пикосан Ой Устройство для атомно-слоевого осаждения (ald)
CN111850518B (zh) * 2020-07-21 2024-07-19 理想万里晖半导体设备(上海)股份有限公司 托盘预热腔及对应的pecvd设备
KR102581325B1 (ko) * 2020-12-22 2023-09-22 한국전자기술연구원 배치 타입 원자층 증착 장치
FI131711B1 (en) * 2022-03-30 2025-10-08 Beneq Oy Reaction chamber, atomic layer growth equipment and method
CN115404464A (zh) * 2022-09-23 2022-11-29 江苏微导纳米科技股份有限公司 沉积薄膜的方法和设备、薄膜以及太阳能电池

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US20100083900A1 (en) 2008-10-03 2010-04-08 Industrial Technology Research Institute Atomic layer deposition apparatus
US20100098851A1 (en) 2008-10-20 2010-04-22 Varian Semiconductor Equipment Associates, Inc. Techniques for atomic layer deposition
US20100190343A1 (en) 2009-01-28 2010-07-29 Asm America, Inc. Load lock having secondary isolation chamber
JP2011521476A (ja) 2008-05-20 2011-07-21 スリーエム イノベイティブ プロパティズ カンパニー 不定長ウェブを連続焼結するための方法

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KR100347379B1 (ko) * 1999-05-01 2002-08-07 주식회사 피케이엘 복수매 기판의 박막 증착 공정이 가능한 원자층 증착장치
US6475276B1 (en) * 1999-10-15 2002-11-05 Asm Microchemistry Oy Production of elemental thin films using a boron-containing reducing agent
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US20100190343A1 (en) 2009-01-28 2010-07-29 Asm America, Inc. Load lock having secondary isolation chamber

Also Published As

Publication number Publication date
JP5927305B2 (ja) 2016-06-01
EP2783023A1 (en) 2014-10-01
RU2014124039A (ru) 2015-12-27
KR20140096365A (ko) 2014-08-05
JP2015505899A (ja) 2015-02-26
US20140335267A1 (en) 2014-11-13
WO2013076347A1 (en) 2013-05-30
TWI555874B (zh) 2016-11-01
CN103946418A (zh) 2014-07-23
IN2014DN04032A (cg-RX-API-DMAC7.html) 2015-05-15
TW201323650A (zh) 2013-06-16
RU2586956C2 (ru) 2016-06-10
EP2783023B1 (en) 2020-11-04
EP2783023A4 (en) 2015-06-24
KR20160105548A (ko) 2016-09-06
SG11201402372TA (en) 2014-06-27

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